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BT151-650R,127
Thyristor, 650 V, 15 mA, 7.5 A, 12 A, TO-220AB, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: WEEN SEMICONDUCTORS
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:650V; Gate Trigger Current Max, Igt:15mA; Current It av:7.5A; On State RMS Current IT(rms):12A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins
- MSL: -
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Product Range: BT151
- Thyristor Mounting: Through Hole
- Holding Current Max: 20mA
- On State RMS Current: 12A
- Thyristor Case Style: TO-220AB
- Average On State Current: 7.5A
- Gate Trigger Current Max: 15mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 132A
- Peak Repetitive Off State Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.251 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**10 December 2015**
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## **IMPORTANT NOTICE**
## **1. Global joint venture starts operations as WeEn Semiconductors**
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), **WeEn Semiconductors** , which will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown below.
**WWW** - For www.nxp.com use www.ween-semi.com **Email** - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “[©] **NXP Semiconductors N.V.** _**{year}**_ **. All rights reserved** ” becomes “[©] **WeEn Semiconductors Co., Ltd.** _**{year}**_ **. All rights reserved** ”
If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
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**BT151-650R**
**SCR, 12 A, 15mA, 650 V, SOT78**
**Product data sheet**
**Rev. 05 — 27 February 2009**
## **1. Product profile**
## **1.1 General description**
Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
## **1.2 Features and benefits**
- High reliability
- High thermal cycling performance
- High surge current capability
## **1.3 Applications**
- Ignition circuits
- Motor control
- Protection Circuits
- Static switching
## **1.4 Quick reference data**
**Table 1. Quick reference**
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VDRM|repetitive peak|||-|-|650|V|
||off-state voltage|||||||
|IT(AV)|average on-state|half sine wave;||-|-|7.5|A|
||current|Tmb≤109 °C; see Figure 3||||||
|IT(RMS)|RMS on-state|half sine wave;||-|-|12|A|
||current|Tmb≤109 °C; see Figure 1<br>;||||||
|||seeFigure 2||||||
|**Static characteristics**||||||||
|IGT|gate trigger current|VD= 12 V; Tj= 25 °C;||-|2|15|mA|
|||IT= 100 mA; seeFigure 8||||||
**==> picture [81 x 42] intentionally omitted <==**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **2. Pinning information**
## **Table 2. Pinning information**
|**Pin**<br>**Symbol**<br>**Description**<br>**Simplified**|**outline**<br>**Graphic symbol**|
|---|---|
|1<br>K<br>cathode<br>2<br>A<br>anode<br>3<br>G<br>gate<br>mb<br>mb<br>anode|1<br>2<br>mb<br>3<br>sym037<br>A<br>K<br>G|
**SOT78 (TO-220AB; SC-46)**
## **3. Ordering information**
|**Table 3.**<br>**Ordering information**|**Table 3.**<br>**Ordering information**|
|---|---|
|**Type number**|**Package**|
||**Name**<br>**Description**<br>**Version**|
|BT151-650R|TO-220AB;<br>SC-46<br>plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead<br>TO-220AB<br>SOT78|
© NXP B.V. 2009. All rights reserved.
BT151-650R_5 **Product data sheet**
**Rev. 05 — 27 February 2009**
**2 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **4. Limiting values**
**Table 4. Limiting values**
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**|
|---|---|
|VDRM<br>repetitive peak off-state<br>voltage|-<br>650<br>V|
|VRRM<br>repetitive peak reverse<br>voltage|-<br>650<br>V|
|IT(AV)<br>average on-state<br>current|half sine wave; Tmb≤109 °C; see Figure 3<br>-<br>7.5<br>A|
|IT(RMS)<br>RMS on-state current|half sine wave; Tmb≤109 °C; see Figure 1<br>;see<br>Figure 2<br>-<br>12<br>A|
|dIT/dt<br>rate of rise of on-state<br>current|IT= 20 A; IG= 50 mA; dIG/dt = 50 mA/µs<br>-<br>50<br>A/µs|
|IGM<br>peak gate current|-<br>2<br>A|
|PGM<br>peak gate power|-<br>5<br>W|
|Tstg<br>storage temperature|-40<br>150<br>°C|
|Tj<br>junction temperature|-<br>125<br>°C|
|ITSM<br>non-repetitive peak<br>on-state current|half sine wave; tp= 8.3 ms; Tj(init)= 25 °C<br>-<br>132<br>A|
||half sine wave; tp= 10 ms; Tj(init)= 25 °C; see<br>Figure 4<br>;see Figure 5<br>-<br>120<br>A|
|I2t<br>I2t for fusing|tp= 10 ms; sine-wave pulse<br>-<br>72<br>A2s|
|PG(AV)<br>average gate power|over any 20 ms period<br>-<br>0.5<br>W|
|VRGM<br>peak reverse gate<br>voltage|-<br>5<br>V|
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aaa954<br>25<br>IT(RMS)<br>(A)<br>20<br>15<br>10<br>5<br>0<br>10 [−][2] 10 [−][1] 1 10<br>surge duration (s)<br>**----- End of picture text -----**<br>
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aaa999<br>16<br>IT(RMS)<br>(A)<br>12<br>8<br>4<br>0<br>−50 0 50 100 150<br>Tmb (°C)<br>**----- End of picture text -----**<br>
**Fig 2. RMS on-state current as a function of mounting base temperature; maximum values**
**Fig 1. RMS on-state current as a function of surge duration; maximum values**
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**3 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
003aab830<br>15<br>Ptot a = 1.57<br>(W)<br>1.9<br>2.2<br>10<br>2.8<br>4<br>conduction form<br>angle factor<br>5 (degrees) a<br>30 4<br>60 2.8<br>90 2.2 α<br>120 1.9<br>180 1.57<br>0<br>0 2 4 6 8<br>IT(AV) (A)<br>**----- End of picture text -----**<br>
**Fig 3. Total power dissipation as a function of average on-state current; maximum values**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aaa956<br>10 [3]<br>ITSM dlT/dt limit<br>(A)<br>10 [2]<br>IT ITSM<br>tp t<br>Tj initial = 25 °C max<br>10<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2]<br>tp (s)<br>**----- End of picture text -----**<br>
**Fig 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values**
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**4 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
003aab829<br>160<br> ITSM<br>(A)<br>120<br>80<br>IT ITSM<br>40<br>tp t<br>Tj initial = 25 °C max<br>0<br>1 10 10 [2] 10 [3]<br>number of cycles<br>**----- End of picture text -----**<br>
**Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values**
## **5. Thermal characteristics**
**Table 5. Thermal characteristics**
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**----- Start of picture text -----**<br>
Symbol Parameter Conditions Min Typ Max Unit<br>Rth(j-mb) thermal resistance from see Figure 6 - - 1.3 K/W<br>junction to mounting<br>base<br>Rth(j-a) thermal resistance from - 60 - K/W<br>junction to ambient free<br>air<br>001aaa962<br>10<br>Zth(j-mb)<br>(K/W)<br>1<br>10 [−][1]<br>P δ = tp<br>T<br>10 [−][2]<br>tp t<br>T<br>10 [−][3]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10<br>tp (s)<br>Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width<br>**----- End of picture text -----**<br>
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**5 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **6. Characteristics**
**Table 6. Characteristics**
|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|**Static characteristics**||
|IGT<br>gate trigger current|VD= 12 V; Tj= 25 °C; IT= 100 mA; see<br>Figure 8<br>-<br>2<br>15<br>mA|
|IL<br>latching current|VD= 12 V; Tj= 25 °C; see Figure 9<br>-<br>10<br>40<br>mA|
|IH<br>holding current|VD= 12 V; Tj= 25 °C; see Figure 10<br>-<br>7<br>20<br>mA|
|VT<br>on-state voltage|IT= 23 A; Tj= 25 °C; seeFigure 11<br>-<br>1.4<br>1.75<br>V|
|VGT<br>gate trigger voltage|IT= 100 mA; VD= 12 V; Tj= 25 °C; see<br>Figure 12<br>-<br>0.6<br>1.5<br>V|
||IT= 100 mA; VD= 650 V; Tj= 125 °C<br>0.25<br>0.4<br>-<br>V|
|ID<br>off-state current|VD= 650 V; Tj= 125 °C<br>-<br>0.1<br>0.5<br>mA|
|IR<br>reverse current|VR= 650 V; Tj= 125 °C<br>-<br>0.1<br>0.5<br>mA|
|**Dynamic characteristics**||
|dVD/dt<br>rate of rise of off-state<br>voltage|VDM= 435 V; Tj= 125 °C; exponential<br>waveform; gate open circuit<br>50<br>130<br>-<br>V/µs|
||VDM= 435 V; Tj= 125 °C; RGK= 100 Ω;<br>exponential waveform; seeFigure 7<br>200<br>1000<br>-<br>V/µs|
|tgt<br>gate-controlled turn-on<br>time|ITM= 40 A; VD= 650 V; IG= 100 mA;<br>dIG/dt = 5 A/µs; Tj= 25 °C<br>-<br>2<br>-<br>µs|
|tq<br>commutated turn-off<br>time|VDM= 435 V; Tj= 125 °C; ITM= 20 A;<br>VR= 25 V; (dIT/dt)M= 30 A/µs;<br>dVD/dt = 50 V/µs; RGK= 100 Ω<br>-<br>70<br>-<br>µs|
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**----- Start of picture text -----**<br>
001aaa949<br>10 [4]<br>dVD/dt<br>(V/μs)<br>(1)<br>10 [3]<br>(2)<br>10 [2]<br>10<br>0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aaa952<br>3<br>IGT<br>IGT(25°C)<br>2<br>1<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
**Fig 8. Normalized gate trigger current as a function of junction temperature**
**Fig 7. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values**
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**6 of 11**
**BT151-650R**
**NXP Semiconductors**
## **SCR, 12 A, 15mA, 650 V, SOT78**
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**----- Start of picture text -----**<br>
001aaa951<br>3<br>IL<br>IL(25°C)<br>2<br>1<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
**Fig 9. Normalized latching current as a function of junction temperature**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aaa959<br>30<br>IT<br>(A)<br>20<br>(1) (2) (3)<br>10<br>0<br>0 0.5 1 1.5 2<br>VT (V)<br>**----- End of picture text -----**<br>
**==> picture [130 x 50] intentionally omitted <==**
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**----- Start of picture text -----**<br>
001aaa950<br>3<br>IH<br>IH(25°C)<br>2<br>1<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
**Fig 10. Normalized holding current as a function of junction temperature**
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
001aaa953<br>1.6<br>VGT<br>VGT(25°C)<br>1.2<br>0.8<br>0.4<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
**Fig 12. Normalized gate trigger voltage as a function of junction temperature**
**Fig 11. On-state current as a function of on-state voltage**
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**7 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **7. Package outline**
## **Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB**
**==> picture [26 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
SOT78<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
E A<br>p A1<br>q mounting<br>D1 base<br>D<br>L1 [(1)] L2 [(1)]<br>Q<br>b1 [(2)]<br>L (3×)<br>b2 [(2)]<br>(2×)<br>1 2 3<br>b(3×) c<br>e e<br>0 5 10 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 b b1 [(2)] b2 [(2)] c D D1 E e L L1 [(1)] L2 [(1)] p q Q<br>max.<br>4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6<br>mm 2.54 3.0<br>4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2<br>Notes<br>1. Lead shoulder designs may vary.<br>2. Dimension includes excess dambar.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>08-04-23<br>SOT78 3-lead TO-220AB SC-46<br>08-06-13<br>**----- End of picture text -----**<br>
**Fig 13. Package outline SOT78 (TO-220AB)**
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**8 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **8. Revision history**
|**Table 7.**<br>**Revision history**|**Table 7.**<br>**Revision history**||||
|---|---|---|---|---|
|**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|BT151-650R_5|20090227|Product data sheet|-|BT151_SER_L_R_4|
|Modifications:|**•** Package|outline updated.|||
||**•** Type number BT151-650R separated||from data sheet BT151_SER_L_R_4.||
|BT151_SER_L_R_4|20061023|Product data sheet|-|BT151_SERIES_3|
|BT151_SERIES_3 (9397|20040607|Product specification|-|BT151_SERIES_2|
|750 13159)|||||
|BT151_SERIES_2|19990601|Product specification|-|BT151_SERIES_1|
|BT151_SERIES_1|19970901|Product specification|-|-|
© NXP B.V. 2009. All rights reserved.
BT151-650R_5 **Product data sheet**
**Rev. 05 — 27 February 2009**
**9 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **9. Legal information**
## **9.1 Data sheet status**
|**Document status** **[1]**<br>**[2]**|**Product status[3]**|**Definition**|
|---|---|---|
|Objective [short] data sheet|Development|This document contains data from the objective specification for product development.|
|Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.|
|Product [short] data sheet|Production|This document contains the product specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **9.2 Definitions**
**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
## **9.3 Disclaimers**
**General** — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
**Right to make changes** — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use** — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Terms and conditions of sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
## **9.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
## **10. Contact information**
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
© NXP B.V. 2009. All rights reserved.
BT151-650R_5
**Product data sheet**
**Rev. 05 — 27 February 2009**
**10 of 11**
**BT151-650R**
**NXP Semiconductors**
**SCR, 12 A, 15mA, 650 V, SOT78**
## **11. Contents**
|**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**|
|---|---|
|1.1|General description . . . . . . . . . . . . . . . . . . . . . .1|
|1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1|
|1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
|1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**|
|**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**|
|**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
|**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .5**|
|**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6**|
|**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**8**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9**|
|**9**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .10**|
|9.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10|
|9.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|9.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|9.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|**10**|**Contact information. . . . . . . . . . . . . . . . . . . . . .10**|
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
**==> picture [84 x 52] intentionally omitted <==**
**© NXP B.V. 2009.**
**All rights reserved.**
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
**Date of release: 27 February 2009 Document identifier: BT151-650R_5**
Updated at April 29, 2026
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