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BT139X-600E,127
Triac, 600 V, 16 A, SOT-186A, 1.5 V, 170 A, 45 mA
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: WEEN SEMICONDUCTORS
- Product type:
- Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):16A; Triac Case Style:SOT-186A; Gate Trigger Current Max (QI), Igt:25mA; Gate Trigger Voltage Max Vgt:1.5V; Peak Gate
- MSL: -
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Product Range: BTA216X
- Triac Case Style: SOT-186A
- Thyristor Mounting: Through Hole
- Holding Current Max: 45mA
- On State RMS Current: 16A
- Peak On State Voltage: 1.6V
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 170A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.371 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**10 December 2015**
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## **IMPORTANT NOTICE**
## **1. Global joint venture starts operations as WeEn Semiconductors**
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), **WeEn Semiconductors** , which will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown below.
**WWW** - For www.nxp.com use www.ween-semi.com **Email** - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “[©] **NXP Semiconductors N.V.** _**{year}**_ **. All rights reserved** ” becomes “[©] **WeEn Semiconductors Co., Ltd.** _**{year}**_ **. All rights reserved** ”
If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
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**4Q Triac** | **1 May 2015**
**Product data sheet**
## **BT139X-600E**
## **1. General description**
Planar passivated sensitive gate four quadrant triac in a SOT186A "full pack" plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate "series E" triac is intended for gate triggering by low power drivers and microcontrollers.
## **2. Features and benefits**
- Direct triggering from low power drivers and logic ICs
- High blocking voltage capability
- Isolated package
- Planar passivated for voltage ruggedness and reliability
- Sensitive gate
- Triggering in all four quadrants
## **3. Applications**
- General purpose motor control
- General purpose switching
## **4. Quick reference data**
**Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit** ~~eS~~ VDRM repetitive peak off600 V state voltage ~~a~~ ITSM non-repetitive peak onfull sine wave; Tj(init) = 25 °C; - - 155 A state current tp = 20 ms; Fig. 4; Fig. 5 ~~rr~~ IT(RMS) RMS on-state current full sine wave; T ~~ee~~ h ≤ 38 °C; Fig. 1; Fig. 2; - - 16 A Fig. 3 ~~a a ee ee~~ **Static characteristics** ~~OO~~ IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA Tj = 25 °C; Fig. 7 ~~Pe~~ VD = 12 V; IT = 0.1 A; T2+ G-; - 4 10 mA Tj = 25 °C; Fig. 7 ~~poe EE~~
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**4Q Triac**
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|||VD= 12 V; IT= 0.1 A; T2- G-;<br>Tj= 25 °C; Fig. 7||-|5|10|mA|
|||VD= 12 V; IT= 0.1 A; T2- G+;<br>Tj= 25 °C; Fig. 7||-|11|25|mA|
## **5. Pinning information**
## **Table 2. Pinning information**
|**Pin**|**Symbol**|**Description**|**Simplified outline**|**Graphic symbol**|
|---|---|---|---|---|
|1|T1|main terminal 1|3<br>2<br>1<br>mb<br>**TO-220F (SOT186A)**|_sym051_<br>T1<br>G<br>T2|
|2|T2|main terminal 2|||
|3|G|gate|||
|mb|n.c.|mounting base; isolated|||
## **6. Ordering information**
## **Table 3. Ordering information**
|**Type number**|**Package**|||
|---|---|---|---|
||**Name**|**Description**|**Version**|
|BT139X-600E|TO-220F|plastic single-ended package; isolated heatsink mounted; 1<br>mounting hole; 3-lead TO-220 "full pack"|SOT186A|
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## **7. Limiting values**
**Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**|**Parameter**|**Conditions**|**Min**<br>**Max**|**Unit**|
|---|---|---|---|---|
|VDRM|repetitive peak off-state voltage||-<br>600|V|
|IT(RMS)|RMS on-state current|full sine wave; Th≤ 38 °C;Fig. 1<br>; Fig. 2<br>;<br>Fig. 3|-<br>16|A|
|ITSM|non-repetitive peak on-state<br>current|full sine wave; Tj(init)= 25 °C;<br>tp= 20 ms; Fig. 4<br>;Fig. 5|-<br>155|A|
|||full sine wave; Tj(init)= 25 °C;<br>tp= 16.7 ms|-<br>170|A|
|I2t|I2t for fusing|tp= 10 ms; SIN|-<br>120|A2s|
|dIT/dt|rate of rise of on-state current|IG= 20 mA; T2+ G+|-<br>50|A/µs|
|||IG= 20 mA; T2+ G-|-<br>50|A/µs|
|||IG= 50 mA; T2- G+|-<br>10|A/µs|
|||IG= 20 mA; T2- G-|-<br>50|A/µs|
|IGM|peak gate current||-<br>2|A|
|PGM|peak gate power||-<br>5|W|
|PG(AV)|average gate power|over any 20 ms period|-<br>0.5|W|
|Tstg|storage temperature||-40<br>150|°C|
|Tj|junction temperature||-<br>125|°C|
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**----- Start of picture text -----**<br>
aaa-009683 001aab095<br>50 20<br>IT(RMS) IT(RMS)<br>(A)<br>(A) 38 °C<br>40<br>15<br>30<br>10<br>20<br>5<br>10<br>0 0<br>10 [-2] 10 [-1] 1 10 -50 0 50 100 150<br>surge duration (s) Th (°C)<br>f = 50 Hz; Th = 38 °C Fig. 2. RMS on-state current as a function of heatsink<br>Fig. 1. RMS on-state current as a function of surge temperature; maximum values<br>duration; maximum values<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aab096<br>25 25<br>conduction form<br>P(W)tot (degrees) angle, α factor a α α = 180 [°] Th(max)(°C)<br>20 45<br>30 2.816 120 [°]<br>60 1.967<br>90 1.570 90 [°]<br>α<br>15 120 1.329 60 [°] 65<br>180 1.110<br>30 [°]<br>10 85<br>5 105<br>0 125<br>0 5 10 15 20<br>IT(RMS) (A)<br>**----- End of picture text -----**<br>
α = conduction angle a = form factor = I / I T(RMS) T(AV)
## **Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values**
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**----- Start of picture text -----**<br>
001aab092<br>10 [3]<br>ITSM<br>(A)<br>10 [2]<br>(1)<br>IT ITSM<br>t<br>(2)<br>tp<br>Tj(init) = 25 °C max<br>10<br>10 [-2] 10 [-1] 1 10 10 [2]<br>Tp (ms)<br>tp ≤ 20 ms<br>(1) dIT/dt limit<br>**----- End of picture text -----**<br>
(2) T2- G+ quadrant limit
**Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values**
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**----- Start of picture text -----**<br>
001aab102<br>160<br>ITSM<br>(A)<br>120<br>80<br>IT I TSM<br>40<br>t<br>1/f<br>Tj(init) = 25 °C max<br>0<br>1 10 10 [2] 10 [3]<br>number of cycles<br>f = 50 Hz<br>Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum<br>values<br>**----- End of picture text -----**<br>
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## **8. Thermal characteristics**
## **Table 5. Thermal characteristics**
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-h)|thermal resistance<br>from junction to<br>heatsink|full or half cycle with heatsink<br>compound; Fig. 6||-|-|4|K/W|
|||full or half cycle without heatsink<br>compound; Fig. 6||-|-|5.5|K/W|
|Rth(j-a)|thermal resistance<br>from junction to<br>ambient|in free air||-|55|-|K/W|
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**----- Start of picture text -----**<br>
001aab097<br>10<br>Zth(j-h)<br>(K/W) (1)<br>(2)<br>1<br>(3)<br>(4)<br>10 [-1]<br>P<br>10 [-2]<br>tp t<br>10 [-3]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>tp (s)<br>**----- End of picture text -----**<br>
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
**Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width**
## **9. Isolation characteristics**
## **Table 6. Isolation characteristics**
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Visol(RMS)|RMS isolation voltage|from all terminals to external heatsink;<br>sinusoidal waveform; clean and dust<br>free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;<br>Th= 25 °C||-|-|2500|V|
|Cisol|isolation capacitance|from main terminal 2 to external<br>heatsink; f = 1 MHz; Th= 25 °C||-|10|-|pF|
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## **10. Characteristics**
|**10. Characteristics**|**10. Characteristics**|||||||
|---|---|---|---|---|---|---|---|
|**Table 7.**<br>**Characteristics**||||||||
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**Static characteristics**||||||||
|IGT|gate trigger current|VD= 12 V; IT= 0.1 A; T2+ G+;<br>Tj= 25 °C; Fig. 7||-|2.5|10|mA|
|||VD= 12 V; IT= 0.1 A; T2+ G-;<br>Tj= 25 °C; Fig. 7||-|4|10|mA|
|||VD= 12 V; IT= 0.1 A; T2- G-;<br>Tj= 25 °C; Fig. 7||-|5|10|mA|
|||VD= 12 V; IT= 0.1 A; T2- G+;<br>Tj= 25 °C; Fig. 7||-|11|25|mA|
|IL|latching current|VD= 12 V; IG= 0.1 A; T2+ G+;<br>Tj= 25 °C; Fig. 8||-|3.2|30|mA|
|||VD= 12 V; IG= 0.1 A; T2+ G-;<br>Tj= 25 °C; Fig. 8||-|16|40|mA|
|||VD= 12 V; IG= 0.1 A; T2- G-;<br>Tj= 25 °C; Fig. 8||-|4|30|mA|
|||VD= 12 V; IG= 0.1 A; T2- G+;<br>Tj= 25 °C; Fig. 8||-|5.5|40|mA|
|IH|holding current|VD= 12 V; Tj= 25 °C;Fig. 9||-|4|45|mA|
|VT|on-state voltage|IT= 20 A; Tj= 25 °C; Fig. 10||-|1.2|1.6|V|
|VGT|gate trigger voltage|VD= 12 V; IT= 0.1 A; Tj= 25 °C;<br>Fig. 11||-|0.7|1|V|
|||VD= 400 V; IT= 0.1 A; Tj= 125 °C;<br>Fig. 11||0.25|0.4|-|V|
|ID|off-state current|VD= 600 V; Tj= 125 °C||-|0.1|0.5|mA|
|**Dynamic characteristics**||||||||
|dVD/dt|rate of rise of off-state<br>voltage|VDM= 402 V; Tj= 125 °C; (VDM= 67%<br>of VDRM); exponential waveform; gate<br>open circuit||-|50|-|V/µs|
|tgt|gate-controlled turn-on<br>time|ITM= 20 A; VD= 600 V; IG= 0.1 A; dIG/<br>dt = 5 A/µs||-|2|-|µs|
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**----- Start of picture text -----**<br>
001aab089 001aab100<br>3 3<br>IGT(Tj) IL<br>IGT(25°C) (1) IL(25°C)<br>(2)<br>2 2<br>(3)<br>(4)<br>1 1<br>0 0<br>-50 0 50 100 150 -50 0 50 100 150<br>Tj (°C) Tj (°C)<br>(1) T2+ G+<br>Fig. 8. Normalized latching current as a function of<br>(2) T2+ G-<br>junction temperature<br>(3) T2- G-<br>(4) T2- G+<br>Fig. 7. Normalized gate trigger current as a function of<br>junction temperature<br>001aab099 001aab094<br>3 50<br>IT<br>IH (A) (1) (2) (3)<br>IH(25°C) 40<br>2<br>30<br>20<br>1<br>10<br>0 0<br>-50 0 50 100 150 0 1 2 3<br>Tj (°C) VT (V)<br>Fig. 9. Normalized holding current as a function of Vo = 1.195 V; Rs = 0.018 Ω<br>junction temperature (1) Tj = 125 °C; typical values<br>(2) Tj = 125 °C; maximum values<br>(3) Tj = 25 °C; maximum values<br>Fig. 10. On-state current as a function of on-state<br>voltage<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aab101<br>1.6<br>VGT<br>VGT(25°C)<br>1.2<br>0.8<br>0.4<br>-50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
**Fig. 11. Normalized gate trigger voltage as a function of junction temperature**
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## **11. Package outline**
**Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack'**
**==> picture [42 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
SOT186A<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
E A<br>P A1<br>q<br>D1 mounting<br>T base<br>D<br>j<br>L2 L1 K<br>Q<br>b1<br>L b2<br>1 2 3<br>b w M c<br>e<br>e1<br>0 5 10 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>(1)<br>UNIT A A1 b b1 b2 c D D1 E e e1 j K L L1 L2 P Q q T [(2)] w<br>max.<br>mm 4.6 2.9 0.9 1.1 1.4 0.7 15.8 6.5 10.3 2.54 5.08 2.7 0.6 14.4 3.30 3 3.2 2.6 3.0 2.5 0.4<br>4.0 2.5 0.7 0.9 1.0 0.4 15.2 6.3 9.7 1.7 0.4 13.5 2.79 3.0 2.3 2.6<br>Notes<br>1. Terminal dimensions within this zone are uncontrolled.<br>2. Both recesses are # 2.5 × 0.8 max. depth<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>02-04-09<br>SOT186A 3-lead TO-220F<br>06-02-14<br>**----- End of picture text -----**<br>
**Fig. 12. Package outline TO-220F (SOT186A)**
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## **12. Legal information**
## **12.1 Data sheet status**
|**Document**<br>**status [1]**<br>**[2]**|**Product**<br>**status [3]**|**Definition**|
|---|---|---|
|Objective<br>[short] data<br>sheet|Development|This document contains data from<br>the objective specification for product<br>development.|
|Preliminary<br>[short] data<br>sheet|Qualification|This document contains data from the<br>preliminary specification.|
|Product<br>[short] data<br>sheet|Production|This document contains the product<br>specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **12.2 Definitions**
**Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
## **12.3 Disclaimers**
**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors.
**Right to make changes** — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
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**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.
**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
**Terms and conditions of commercial sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the
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grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
## **12.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
**Bitsound** , **CoolFlux** , **CoReUse** , **DESFire** , **FabKey** , **GreenChip** , **HiPerSmart** , **HITAG** , **I²C-bus** logo, **ICODE** , **I-CODE** , **ITEC** , **MIFARE** , **MIFARE Plus** , **MIFARE Ultralight** , **SmartXA** , **STARplug** , **TOPFET** , **TrenchMOS** , **TriMedia** and **UCODE** — are trademarks of NXP Semiconductors N.V.
**HD Radio** and **HD Radio** logo — are trademarks of iBiquity Digital Corporation.
© NXP Semiconductors N.V. 2015. All rights reserved
All information provided in this document is subject to legal disclaimers.
BT139X-600E
**Product data sheet**
**1 May 2015**
**12 / 13**
**NXP Semiconductors**
**BT139X-600E**
**4Q Triac**
## **13. Contents**
|**13. **|**Contents**|
|---|---|
|**1**|**General description ............................................... 1**|
|**2**|**Features and benefits ............................................1**|
|**3**|**Applications ........................................................... 1**|
|**4**|**Quick reference data ............................................. 1**|
|**5**|**Pinning information ...............................................2**|
|**6**|**Ordering information .............................................2**|
|**7**|**Limiting values .......................................................3**|
|**8**|**Thermal characteristics .........................................6**|
|**9**|**Isolation characteristics ........................................6**|
|**10**|**Characteristics .......................................................7**|
|**11**|**Package outline ................................................... 10**|
|**12**|**Legal information .................................................11**|
|12.1|Data sheet status ............................................... 11|
|12.2|Definitions ...........................................................11|
|12.3|Disclaimers .........................................................11|
|12.4|Trademarks ........................................................ 12|
## **© NXP Semiconductors N.V. 2015. All rights reserved**
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 1 May 2015**
© NXP Semiconductors N.V. 2015. All rights reserved
All information provided in this document is subject to legal disclaimers.
BT139X-600E
**Product data sheet**
**1 May 2015**
**13 / 13**
Updated at June 10, 2026
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