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BT138-800E
Triac, 800 V, 12 A, TO-220AB, 1.5 V, 105 A, 30 mA
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: WEEN SEMICONDUCTORS
- Product type:
- Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):12A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:25mA; Gate Trigger Voltage Max Vgt:1.5V; Peak G
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: -
- Triac Case Style: TO-220AB
- Thyristor Mounting: Through Hole
- Holding Current Max: 30mA
- On State RMS Current: 12A
- Peak On State Voltage: 1.65V
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 105A
- Peak Repetitive Off State Voltage: 800V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.498 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **BT138-800E 4Q Triac 30 August 2013 Product data sheet** ## **1. General description** Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. ## **2. Features and benefits** - Direct triggering from low power drivers and logic ICs - High blocking voltage capability - Planar passivated for voltage ruggedness and reliability - Sensitive gate - Triggering in all four quadrants ## **3. Applications** - General purpose motor control - General purpose switching ## **4. Quick reference data** **Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit** ~~a~~ VDRM repetitive peak off800 V state voltage ~~aee~~ ITSM non-repetitive peak onfull sine wave; Tj(init) = 25 °C; - - 95 A state current tp = 20 ms; Fig. 4; Fig. 5 ~~ee~~ Tj junction temperature - - 125 °C ~~a eee eee~~ IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; - - 12 A Fig. 2; Fig. 3 ~~a~~ **Static characteristics** ~~a ee ee OO~~ IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA Tj = 25 °C; Fig. 7 ~~po~~ VD = 12 V; IT = 0.1 A; T2+ G-; - 4 10 mA Tj = 25 °C; Fig. 7 ~~ee ee~~ Scan or click this QR code to view the latest information for this product **NXP Semiconductors** **BT138-800E** **4Q Triac** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |||VD= 12 V; IT= 0.1 A; T2- G-;<br>Tj= 25 °C; Fig. 7||-|5|10|mA| |||VD= 12 V; IT= 0.1 A; T2- G+;<br>Tj= 25 °C; Fig. 7||-|11|25|mA| |**Dynamic characteristics**|||||||| |dVD/dt|rate of rise of off-state<br>voltage|VDM= 536 V; Tj= 125 °C; (VDM= 67%<br>of VDRM); exponential waveform; gate<br>open circuit||-|150|-|V/µs| ## **5. Pinning information** ## **Table 2. Pinning information** |**Pin**|**Symbol**|**Description**|**Simplified outline**|**Graphic symbol**| |---|---|---|---|---| |1|T1|main terminal 1|1<br>2<br>mb<br>3<br>**TO-220AB (SOT78)**|_sym051_<br>T1<br>G<br>T2| |2|T2|main terminal 2||| |3|G|gate||| |mb|T2|mounting base; main<br>terminal 2||| ## **6. Ordering information** **Table 3. Ordering information** |**Type number**|**Package**||| |---|---|---|---| ||**Name**|**Description**|**Version**| |BT138-800E|TO-220AB|plastic single-ended package; heatsink mounted; 1 mounting<br>hole; 3-lead TO-220AB|SOT78| |BT138-800E/DG|TO-220AB|plastic single-ended package; heatsink mounted; 1 mounting<br>hole; 3-lead TO-220AB|SOT78| © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **2 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** ## **7. Limiting values** **Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |VDRM|repetitive peak off-state voltage|||-|800|V| |IT(RMS)|RMS on-state current|full sine wave; Tmb≤ 99 °C;Fig. 1<br>;<br>Fig. 2<br>; Fig. 3||-|12|A| |ITSM|non-repetitive peak on-state<br>current|full sine wave; Tj(init)= 25 °C;<br>tp= 20 ms; Fig. 4<br>;Fig. 5||-|95|A| |||full sine wave; Tj(init)= 25 °C;<br>tp= 16.7 ms||-|105|A| |I2t|I2t for fusing|tp= 10 ms; sine-wave pulse||-|45|A2s| |dIT/dt|rate of rise of on-state current|IT= 20 A; IG= 0.2 A; dIG/dt = 0.2 A/µs;<br>T2+ G+||-|50|A/µs| |||IT= 20 A; IG= 0.2 A; dIG/dt = 0.2 A/µs;<br>T2+ G-||-|50|A/µs| |||IT= 20 A; IG= 0.2 A; dIG/dt = 0.2 A/µs;<br>T2- G-||-|50|A/µs| |||IT= 20 A; IG= 0.2 A; dIG/dt = 0.2 A/µs;<br>T2- G+||-|10|A/µs| |IGM|peak gate current|||-|2|A| |PGM|peak gate power|||-|5|W| |PG(AV)|average gate power|over any 20 ms period||-|0.5|W| |Tstg|storage temperature|||-40|150|°C| |Tj|junction temperature|||-|125|°C| © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **3 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** **==> picture [233 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj940<br>50<br>IT(RMS)<br>(A)<br>40<br>30<br>20<br>10<br>0<br>10 [-2] 10 [-1] 1 10<br>surge duration (s)<br>f = 50 Hz; Tmb = 99 °C<br>**----- End of picture text -----**<br> **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj938<br>15<br>IT(RMS)<br>(A) 99 °C<br>12<br>9<br>6<br>3<br>0<br>-50 0 50 100 150<br>Tmb (°C)<br>**----- End of picture text -----**<br> **Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values** **==> picture [481 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj942<br>20 95<br>conduction form<br>Ptot angle factor Tmb(max)<br>(W) (degrees) a α = 180° (°C)<br>16 30 4 ° 101<br>120<br>60 2.8<br>90 2.2 α 90°<br>120 1.9<br>12 180 1.57 60° 107<br>30°<br>8 113<br>4 119<br>0 125<br>0 3 6 9 12 15<br>IT(RMS) (A)<br>α = conduction angle<br>a = form factor = I / I<br>T(RMS) T(AV)<br>**----- End of picture text -----**<br> **Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values** © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **4 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** **==> picture [481 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj944<br>100<br>ITSM<br>(A)<br>80<br>60<br>40<br>IT ITSM<br>t<br>20<br>1 /f<br>Tj(init) = 25 °C max<br>0<br>1 10 10 [2] 10 [3]<br>number of cycles (n)<br>**----- End of picture text -----**<br> f = 50 Hz **Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj945<br> 10 [3]<br>ITSM I T ITSM<br>(A)<br>t<br>tp<br>Tj(init) = 25 °C max<br> 10 [2]<br>(1)<br>(2)<br> 10<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>tp (s)<br>**----- End of picture text -----**<br> tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit **Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values** © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **5 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** ## **8. Thermal characteristics** ## **Table 5. Thermal characteristics** |**Symbol**|**Symbol**||**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Parameter**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|||||**Min**|**Min**|**Min**|**Min**|**Min**|**Min**|**Typ**|**Typ**|**Typ**|**Typ**|**Max**|**Max**|**Max**|**Max**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Rth(j-mb)|||thermal resistance<br>from junction to<br>mounting base|||||||||||||full cycle;Fig. 6|||||||||||||||||||||||||-||||||-||||1.5|||||K/W| |||||||||||||||||half cycle;Fig. 6|||||||||||||||||||||||||-||||||-||||2|||||K/W| |Rth(j-a)|||thermal resistance<br>from junction to<br>ambient|||||||||||||in free air|||||||||||||||||||||||||-||||||60||||-|||||K/W| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |10-1<br>10-2<br>1<br>10<br>Zth(j-mb)<br>(K/W)<br>10-3<br>10-5<br>10-1<br>10-2<br>10-4<br>10-3<br>(1)<br>~~(2)~~<br>(1) Unidirectional (half cycle)<br>(2) Bidirectional (full cycle)<br>**Fig. 6.**<br>**Transient thermal impedance from junction to mounting base as a function**||||||||||||||||||||||||||||||||||||||||||||||||||||||||| ||10-1<br>10-2<br>1<br>10<br>Zth(j-mb)<br>(K/W)<br>10-3<br>10-5||||||||||||||||||||||||||||||||||||||||||||||_003aaj343_<br>tp(s)<br>10<br>~~tp~~<br>~~t~~|||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||(1)||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||~~(2)~~||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||~~P~~D||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| |||||||||||||||||||||||||||||||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||||||||||||||||||||||~~t~~||||~~t~~|||| |||||||||||||||||||||||||||||||||||||||||||||||||||~~p~~||||||| ||||10-4|||||||||||||10-1<br>10-2<br>10-3|||||||||||||||||||||||||1|||||||||||||||| ||||||||||||||||||||||||||||||||||||||||||**of pulse duration**|||||||||||||||| © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **6 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** ## **9. Characteristics** |**9.**<br>**Characteristics**|**9.**<br>**Characteristics**||||||| |---|---|---|---|---|---|---|---| |**Table 6.**<br>**Characteristics**|||||||| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**Static characteristics**|||||||| |IGT|gate trigger current|VD= 12 V; IT= 0.1 A; T2+ G+;<br>Tj= 25 °C; Fig. 7||-|2.5|10|mA| |||VD= 12 V; IT= 0.1 A; T2+ G-;<br>Tj= 25 °C; Fig. 7||-|4|10|mA| |||VD= 12 V; IT= 0.1 A; T2- G-;<br>Tj= 25 °C; Fig. 7||-|5|10|mA| |||VD= 12 V; IT= 0.1 A; T2- G+;<br>Tj= 25 °C; Fig. 7||-|11|25|mA| |IL|latching current|VD= 12 V; IG= 0.1 A; T2+ G+;<br>Tj= 25 °C; Fig. 8||-|-|30|mA| |||VD= 12 V; IG= 0.1 A; T2+ G-;<br>Tj= 25 °C; Fig. 8||-|-|40|mA| |||VD= 12 V; IG= 0.1 A; T2- G-;<br>Tj= 25 °C; Fig. 8||-|-|30|mA| |||VD= 12 V; IG= 0.1 A; T2- G+;<br>Tj= 25 °C; Fig. 8||-|-|40|mA| |IH|holding current|VD= 12 V; Tj= 25 °C;Fig. 9||-|-|30|mA| |VT|on-state voltage|IT= 15 A; Tj= 25 °C; Fig. 10||-|1.4|1.65|V| |VGT|gate trigger voltage|VD= 12 V; IT= 0.1 A; Tj= 25 °C;<br>Fig. 11||-|0.7|1|V| |||VD= 400 V; IT= 0.1 A; Tj= 125 °C;<br>Fig. 11||0.25|0.4|-|V| |ID|off-state current|VD= 800 V; Tj= 125 °C||-|0.1|0.5|mA| |**Dynamic characteristics**|||||||| |dVD/dt|rate of rise of off-state<br>voltage|VDM= 536 V; Tj= 125 °C; (VDM= 67%<br>of VDRM); exponential waveform; gate<br>open circuit||-|150|-|V/µs| |tgt|gate-controlled turn-on<br>time|ITM= 16 A; VD= 800 V; IG= 0.1 A; dIG/<br>dt = 5 A/µs||-|2|-|µs| © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **7 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** **==> picture [233 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 3 003aaj946<br>IGT<br>IGT(25°C) (1)<br>(2)<br>2<br>(3)<br>(4)<br>(1)<br>(2)<br>(3)<br>1<br>(4)<br>0<br>-50 0 50 100 150<br>Tj (°C)<br>(1) T2- G+<br>**----- End of picture text -----**<br> (2) T2- G- (3) T2+ G- (4) T2+ G+ **==> picture [233 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj947<br>3<br>IL<br>IL(25°C)<br>2<br>1<br>0<br>-50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br> **Fig. 8. Normalized latching current as a function of junction temperature** **Fig. 7. Normalized gate trigger current as a function of junction temperature** **==> picture [497 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj948 003aaj949<br>3 40<br>IT<br>IH (A)<br>IH(25°C)<br>30<br>2<br>20<br>1 (1) (2) (3)<br>10<br>0 0<br>-50 0 50 100 150 0 0.5 1 1.5 2 2.5<br>Tj (°C) VT (V)<br>Fig. 9. Normalized holding current as a function of Vo = 1.175 V; Rs = 0.0316 Ω<br>junction temperature (1) Tj = 125 °C; typical values<br>(2) Tj = 125 °C; maximum values<br>(3) Tj = 25 °C; maximum values<br>Fig. 10. On-state current as a function of on-state<br>voltage<br>**----- End of picture text -----**<br> © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **8 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** **==> picture [233 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaj950<br>1.6<br>VGT<br>VGT(25°C)<br>1.2<br>0.8<br>0.4<br>-50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br> **Fig. 11. Normalized gate trigger voltage as a function of junction temperature** © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **9 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** ## **10. Package outline** **==> picture [482 x 573] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78<br>E A<br>p A1<br>q mounting<br>D1 base<br>D<br>L1 [(1)] L2 [(1)]<br>Q<br>b1 [(2)]<br>L (3×)<br>b2 [(2)]<br>(2×)<br>1 2 3<br>b(3×) c<br>e e<br>0 5 10 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 b b1 [(2)] b2 [(2)] c D D1 E e L L1 [(1)] L2 [(1)] p q Q<br>max.<br>4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6<br>mm 2.54 3.0<br>4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2<br>Notes<br>1. Lead shoulder designs may vary.<br>2. Dimension includes excess dambar.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>08-04-23<br>SOT78 3-lead TO-220AB SC-46<br>08-06-13<br>**----- End of picture text -----**<br> **Fig. 12. Package outline TO-220AB (SOT78)** BT138-800E All information provided in this document is subject to legal disclaimers. **==> picture [115 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> © NXP N.V. 2013. All rights reserved<br>10 / 13<br>**----- End of picture text -----**<br> **Product data sheet** **30 August 2013** **NXP Semiconductors** **BT138-800E** **4Q Triac** ## **11. Legal information** ## **11.1 Data sheet status** |**Document**<br>**status [1]**<br>**[2]**|**Product**<br>**status [3]**|**Definition**| |---|---|---| |Objective<br>[short] data<br>sheet|Development|This document contains data from<br>the objective specification for product<br>development.| |Preliminary<br>[short] data<br>sheet|Qualification|This document contains data from the<br>preliminary specification.| |Product<br>[short] data<br>sheet|Production|This document contains the product<br>specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **11.2 Definitions** **Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **11.3 Disclaimers** **Limited warranty and liability** — Information in this document is believed to be accurate and reliable. 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It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **11 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. **Non-automotive qualified products** — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. **Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **11.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **Adelante** , **Bitport** , **Bitsound** , **CoolFlux** , **CoReUse** , **DESFire** , **EZ-HV** , **FabKey** , **GreenChip** , **HiPerSmart** , **HITAG** , **I²C-bus** logo, **ICODE** , **I-CODE** , **ITEC** , **Labelution** , **MIFARE** , **MIFARE Plus** , **MIFARE Ultralight** , **MoReUse** , **QLPAK** , **Silicon Tuner** , **SiliconMAX** , **SmartXA** , **STARplug** , **TOPFET** , **TrenchMOS** , **TriMedia** and **UCODE** — are trademarks of NXP B.V. **HD Radio** and **HD Radio** logo — are trademarks of iBiquity Digital Corporation. © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **12 / 13** **NXP Semiconductors** **BT138-800E** **4Q Triac** ## **12. Contents** |**12. **|**Contents**| |---|---| |**1**|**General description ............................................... 1**| |**2**|**Features and benefits ............................................1**| |**3**|**Applications ........................................................... 1**| |**4**|**Quick reference data ............................................. 1**| |**5**|**Pinning information ...............................................2**| |**6**|**Ordering information .............................................2**| |**7**|**Limiting values .......................................................3**| |**8**|**Thermal characteristics .........................................6**| |**9**|**Characteristics .......................................................7**| |**10**|**Package outline ................................................... 10**| |**11**|**Legal information .................................................11**| |11.1|Data sheet status ............................................... 11| |11.2|Definitions ...........................................................11| |11.3|Disclaimers .........................................................11| |11.4|Trademarks ........................................................ 12| ## **© NXP N.V. 2013. All rights reserved** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 30 August 2013** © NXP N.V. 2013. All rights reserved All information provided in this document is subject to legal disclaimers. BT138-800E **Product data sheet** **30 August 2013** **13 / 13**
Updated at June 10, 2026
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