Image not available
Illustrative purposes only
BSZ520N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 21 A, 0.052 ohm, PG-TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 57W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TSDSON
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21A
- Drain Source On State Resistance: 0.052ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.593 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## Je]R ~~n~~ rineon ~~Cif~~ ## "%&$!"# **[TM] 3 Power-Transistor** ## **Features** x _R_ 9I"\[# _R_ 9I"\[# temperature Ro S )# **==> picture [212 x 36] intentionally omitted <==** **----- Start of picture text -----**<br> * Pb-free lead plating; Ro S compliant<br>)#<br>* Qualified according to JEDEC for target application<br>**----- End of picture text -----**<br> ## **BSZ520N15NS3 G** |**Product Summary**|**Product Summary**|**Product Summary**| |---|---|---| |||| |_V_9I|)-(|K| |||| |_R_9I"\[#$ZNd|-*|Z"| |||| |_I_9|*)|6| |**Type**<br>aseswoss~~[|~~|**Package**<br>**Marking**<br>F=%JI9IED%0<br>-*(D)-D<br>~~[|~~|ue ee<br>Ga<br>15D|| |---|---|---|---| |**Maximum ratings,**<br>at|W<br>=25 °C, unless otherwise specified||| |**Parameter**<br>**Symbol Conditions**<br>_I_9<br>_T_8<br>_T_8<br>_I_9$]aY_R<br>_T_8<br>~~a~~<br>Continuous drain current<br>~~ee~~<br>~~psore~~||*)<br>),<br>0,<br>**Value**<br>~~ee~~|**Unit**<br>6| |_E_6I<br>_I_9<br>_R_=I<br>"<br>_V_=I<br>~~Avalanche energy, single pulse~~<br>~~Pf tea 5 |~~||.(<br>q*(<br>~~|~~|Z@<br>K| ||_P_\<br>_T_8|-/|L| |_T_W _T__T<br>)#<br>~~Operating and storage temperature ae ~~<br>~~IEC climatic category; DIN IEC 68-1 ee~~<br>J-STD20andJESD22|||~~°C~~| *# |**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~| |---|---|---|---|---|---|---| |~~Cinfi~~||||||| |**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Thermal characteristics**||||||| |W<br>unction - ambient|_R_U@8||%|%|*&*|A'L| ||_R_U@6|*<br>+#<br>6c<br>cooling are|%|%|.(|| |**Electrical characteristics,**<br>W<br>W<br>at<br>=25 °C, unless otherwise specified||||||| |**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf]~~||||||| |~~Drain-sourcebreakdownvoltage~~|_V_"7H#9II <br>~~P|~~|_V_=I<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|)-(<br>~~Pf]~~|%<br>~~Pf]~~|%<br>~~Pf]~~|K| |~~Drain-source breakdown voltage~~|_V_=I"U#<br>~~P|~~|_V_9I4_V_=I _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|*<br> ~~Pf]~~|+<br>~~Pf]~~|,<br>~~Pf]~~|| |z<br>t<br>it<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~|~~|_I_9II<br>~~||~~|_V_9I<br>_V_=I<br>_T_W<br>=120 V,<br>=0V,<br>=25 °C|%|(&)|)|r6| |||_V_9I<br>_V_=I<br>_T_W<br>=120 V,<br>=0V,<br>=125 °C<br>~~=20V,~~<br>~~=0V~~|%<br>~~Pf]~~|)(<br>~~Pf]~~|)((<br>~~Pf]~~|| |~~Gate-sourceleakagecurrent~~<br>~~|~~|_I_=II<br>~~||~~|_V_=I<br>_V_9I<br>~~=20V,~~<br>~~=0V~~|%<br>~~Pf]~~|)<br>~~Pf]~~|)((<br>~~Pf]~~|[6| |~~Gate-source leakage current~~<br>~~|~~<br>Drain-source on-state resistance|_R_9I"\[#<br>~~| |~~|_V_=I<br>_I_9<br>~~=20 V,~~<br>~~=0V ~~<br>=10V,<br>=18A|%<br> ~~Pf]~~<br> ~~Pf~~|,*<br>~~Pf]~~<br>~~Pf~~|-*<br>~~Pf]~~<br>~~Pf~~|Z"| |||_V_=I<br>_I_9|%|,*|-*|| ||_R_=||%|*&)|%|"| |J^N[_P\[QaPN[PR|_g_S_|g_V_9Ig5*g_I_9g_R_9I"\[#ZNd<br>_I_9|))|*)|%|I| |+#<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.||||||| +# |**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~|**BSZ520N15NS3 G**<br>~~Cinfi~~| |---|---|---|---|---|---|---| |~~Cinfi~~||||||| |**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Dynamic characteristics**||||||| ||_C_V__|_V_=I<br>_V_9I<br>_f_<br>" J<br>=0V,<br>=75V,<br>=1<br>~~P|~~|%|./(|01(|]<| |;<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_\__<br>~~P|~~||%<br>~~Pf]~~|0(<br>~~Pf]~~|%<br>~~Pf]~~|| |~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|+&,<br>~~Pf]~~|%<br>~~Pf]~~|| |~~Reverse transfer capacitance~~|_t_Q"\[#<br>~~P|~~|_V_99<br>_V_=I<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|/<br>~~Pf]~~|%<br>~~Pf]~~|[_| ||_t_^||%|-|%|| ||_t_Q"\SS#||%|)(|%|| ||_t_S||%|+|%|| |#<br>Gate Char e Characteristics||||||| ||_Q_T_|_V_99<br>_I_9<br>_V_=I<br>=0 to 10V|%|+&-|%|[8| ||_Q_TQ||%|)&-|%|| |witching charge|_Q__c||%|+|%|| ||_Q_T||%|0&/|)*|| ||_V_]YNRNa||%|-&*|%|K| ||_Q_\__|_V_99<br>_V_=I|%|**|*1|[8| |**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~||||||| |~~Diodecontinousforwardcurrent~~|_I_I<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|*)<br>~~Pf]~~|6| |~~Diode continous forward current~~|_I_I$]aY_R<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|0,<br>~~Pf]~~|| |Diode forward<br>volt<br>iode forward<br>voltage|_V_I9|_V_=I<br>_I_<<br>_T_W<br>HOM<br>ATA,<br>=25 °C|%|(&1|)&*|K| ||_t_^^|_V_H<br>_I_<<br>Q_i_<'Q_t_<br>C|%|..|%|[_| ||_Q_^^||%|**.|%|[8| |,#<br>See figure 16 for gate charge parameter definition||||||| ,# **BSZ520N15NS3 G** **==> picture [86 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 1 Power dissipation<br>**----- End of picture text -----**<br> _P_ `\`4S" _T_ 8# **==> picture [201 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 40 80 120 160<br>T C [°C]<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br> ## **3 Safe operating area** **==> picture [210 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> I 94S" V 9I y; T 8 25°C; D 4(<br>parameter: t ]<br>10 [2]<br>C<br>C<br>C<br>10 [1]<br>98<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br> ## **2 Drain current** _I_ 94S" _T_ 8 ); _V_ =I" **==> picture [204 x 533] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>15<br>10<br>5<br>0<br>0 40 80 120 160<br>T C [°C]<br>4 Max. transient thermal impedance<br> `U@84S"4S" t ]##<br>parameter: D 4 t ]' T<br>10 [1]<br>(&-<br>10 [0]<br>(&*<br>(&)<br>(&(- (&(*<br>(&()<br>10 [-1] V im V |<br> [A]<br>I D<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br> **4 Max. transient thermal impedance** _Z_ `U@84S"4S" _t_ ]## **==> picture [21 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> t p [s]<br>**----- End of picture text -----**<br> **BSZ520N15NS3 G** ## **5 Typ. output characteristics** _I_ 94S" _V_ 9I ); _T_ W **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> V =I<br>**----- End of picture text -----**<br> ## **6 Typ. drain-source on resistance** **==> picture [64 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> R 9I"\[#4S" I 9 ); T W<br>parameter: V =I<br>**----- End of picture text -----**<br> **==> picture [421 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 50 80<br>5V<br>70 ev<br>10 V' 5.5V<br>40<br>60<br>7V<br>50<br>30 G BV 10V<br>40<br>6V,<br>20<br>30<br>5.5V, 20<br>10<br>/ 5 Vi 10<br>45V<br>0 0<br>0 1 2 3 0 10 20 30 40<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>4S" V =I ys | 9I [[g5*g]] [[I]] 9 [[g]] [[R]] 9I"\[#ZNd g S_4S" I 9 yy T W =25°C<br>parameter: T W<br>50 40<br>35<br>40<br>30<br>25<br>30<br>20<br>20<br>15<br>10<br>10<br>5<br>0 0<br>0 2 4 6 8 0 10 20 30 40 50 60<br>V GS [V] I D [A]<br>]<br>[m<br> [A]<br>I D<br> DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> **7 Typ. transfer characteristics** **==> picture [127 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> I 94S" V =I ys | 9I [[g5*g]] [[I]] 9 [[g]] [[R]] 9I"\[#ZNd<br>**----- End of picture text -----**<br> **BSZ520N15NS3 G** ## **9 Drain-source on-state resistance** _R_ 9I"\[#4S" _T_ W ); _I_ 9 =18A; _V_ =I ## **10 Typ. gate threshold voltage** _V_ =I"`U#4S" _T_ W ); _V_ =I4 _V_ 9I _I_ 9 **==> picture [203 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>120<br>100<br>Gq<br>80<br>98 %<br>60<br>`e]<br>40<br>20<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> **11 Typ. capacitances** _C_ 4S" _V_ 9I OV; _V_ =I _f_ =1 " J **==> picture [204 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>3.5<br>350 A<br>3<br>35 A<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br> ## **12 Forward characteristics of reverse diode** _I_ <4S" _V_ I9# _T_ W **==> picture [203 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4]<br>10 [3] NN 8V__<br>atti<br>10 [2] 8\__<br>8^__<br>10 [1]<br>10 [0]<br>0 20 40 60 80 100<br>V DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br> **==> picture [199 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> 100 [<br>150 °C, 98%<br>10<br>150°C<br>25 °C, 98%<br>1<br>0 0.5 1 1.5 2<br>V SD [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br> **BSZ520N15NS3 G** **==> picture [125 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> 13 Avalanche characteristics<br>**----- End of picture text -----**<br> **==> picture [85 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 14 Typ. gate charge<br>**----- End of picture text -----**<br> **==> picture [65 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> V =I4S"4S" Q TN`R ); I 9<br>**----- End of picture text -----**<br> **==> picture [425 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> I 6I4S" t 6K ); R =I =25 " V =I4S"4S" Q TN`R ); I 9 =9A pulsed<br>parameter: T W"_`N^`# parameter: V 99<br>100 10<br>80 V<br>8<br>50V<br>6 20V<br>10 25°C<br>4<br>100 °C<br>125°C 2<br>1 0<br>1 10 100 1000 0 2 4 6 8 10<br>t AV [µs] Q gate [nC] [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V 7H"9II#4S" T W ); I 9 =1mA<br>165<br>V =I<br>160 Q g<br>155<br>150<br>V T _"`U#<br>145<br>140<br>Q T"`U# Q _c Q gate<br>135 Q T_ Q TQ<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [A] [V]<br>I AS V GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br> **==> picture [202 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>80 V<br>8<br>50V<br>6 20V<br>4<br>2<br>0<br>0 2 4 6 8 10<br>Q gate [nC] [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br> **BSZ520N15NS3 G** **Package Outline: PG-TDSON-8** **BSZ520N15NS3 G** &
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →