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BSZ440N10NS3GATMA1
Power MOSFET, N Channel, 100 V, 18 A, 0.044 ohm, PG-TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage ; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 29W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TSDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 18A
- Drain Source On State Resistance: 0.044ohm
- Gate Source Threshold Voltage Max: 2.7V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.191 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MOSFET
## **OptiMOS[TM]**
Final
## **Features**
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|---|---|
|R|DS(on)|
|R|DS(on)|
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S3O8<br>8<br>7<br>6<br>5<br>1 .<br>2<br>3 .<br>4<br>**----- End of picture text -----**<br>
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||||||
|---|---|---|---|---|
|1|Key|Performance|Parameters|
|Parameter|Value|Unit|
|V|DS|100|V|
|R|DS(on),max|44|m|Ω|
|I|D|18|A|
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S 1 L a 8 D<br>S 2 | | 7 D<br>S 3 : ( =) i 6 D<br>G 4 ae fr 5 D<br>**----- End of picture text -----**<br>
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|---|---|---|---|
|Package|Marking|
|BSZ440N10NS3 G|PG-TSDSON-8|440N10N|-|
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1) J-STD20 and JESD22
Final Data Sheet
2
**OptiMOSª3�Power-Transistor,�100�V**
BSZ440N10NS3�G
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.�2.1,��2015-02-06
**OptiMOSª3�Power-Transistor,�100�V**
BSZ440N10NS3�G
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**2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
at 25 °C
|**Table2Maximumratings**<br>at 25 °C|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|18<br>11<br>5.3|A|_T_C=25°C<br>_T_C=100°C<br>_T_A=25°C,_R_thJA=50K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|72|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|17|mJ|_I_D=12A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|29|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **3�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4.3|K/W|-|
|Thermal resistance, junction - ambient,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) see figure 3
Final Data Sheet
Rev.�2.1,��2015-02-06
4
BSZ440N10NS3�G
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## **OptiMOSª3�Power-Transistor,�100�V**
## **4�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2|2.7|3.5|V|_V_DS=_V_GS,_I_D=12µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.01<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|38<br>48|44<br>86|mΩ|_V_GS=10V,_I_D=12A<br>_V_GS=6V,_I_D=6A|
|Gate resistance|_R_G|-|1.5|-|Ω|-|
|Transconductance|_g_fs|8|15|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=12A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|480|640|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|87|120|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance|_C_rss|-|6|-|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|4.3|-|ns|_V_DD=50V,_V_GS=10V,_I_D=6A,<br>_R_G=1.6Ω|
|Rise time|_t_r|-|1.8|-|ns|_V_DD=50V,_V_GS=10V,_I_D=6A,<br>_R_G=1.6Ω|
|Turn-off delay time|_t_d(off)|-|9.1|-|ns|_V_DD=50V,_V_GS=10V,_I_D=6A,<br>_R_G=1.6Ω|
|Fall time|_t_f|-|2.0|-|ns|_V_DD=50V,_V_GS=10V,_I_D=6A,<br>_R_G=1.6Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.2|-|nC|_V_DD=50V,_I_D=6A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|1.3|-|nC|_V_DD=50V,_I_D=6A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|2.0|-|nC|_V_DD=50V,_I_D=6A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|6.8|9.1|nC|_V_DD=50V,_I_D=6A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.5|-|V|_V_DD=50V,_I_D=6A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|9.0|12|nC|_V_DD=50V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.1,��2015-02-06
5
BSZ440N10NS3�G
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## **OptiMOSª3�Power-Transistor,�100�V**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|18|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|72|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|1|1.2|V|_V_GS=0V,_I_F=18A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|44|-|ns|_V_R=50V,_I_F=6A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|61|-|nC|_V_R=50V,_I_F=6A,d_i_F/d_t_=100A/µs|
Final Data Sheet
6
Rev.�2.1,��2015-02-06
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40 20<br>a SO<br>OO<br>CECT TT| a ESS==5eeaSsS<br>30 X 15 essO<br>\ es SO<br>ei= 20 | Ni\ | fk< 10 [|SRR| | | > INE P_<br>\ PN<br>. ss sO<br>essO<br>\ i sO |<br>10 5<br>X ssOa<br>N essO<br>X i<br>COCOONS) GEERa<br>0 0<br>0 40 80 120 \ 160 0 40 80 R RFE 120 160<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( TOC T C V GS ≥<br>10 [3] 10 [1]<br>ee ee eee ee ee or<br>SEHR Eee | CCRC<br>ee FHMC CCE<br>10 [2] 100 ns<br>0.5<br>a e e COHNCaer<br>S F E 1 µs OR aera Wa TT<br>S eS a A<br>Pt EAN AG 0) a LY<br>10 µs<br>0.2<br>eS EC<br>10 [1] 10 [0]<br>100 µs 0.1<br>a A 1 ms LENT Tt Ti ly 0.05 wr<br>DC 0.02<br>10 [0]<br>ZVI TNT 0.01 AAC<br>SSFEETsites editiem ee ni 7 single pulse He<br>a ee A)ll<br>10 [-1] 10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>Saint ai OAT OT<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
7
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50 70<br>5 V<br>5.5 V<br>60 6 V<br>40<br>10 V<br>7 V<br>50<br>eeye 7 V aA a<br>30<br>6 V 40<br>10 V<br>J) oe a ee<br>|) 30 ee<br>20<br>5.5 V<br>20<br>5 V<br>10 — _ — —<br>10<br>4.5 V<br>0 AnnL-- —| 0 SEEee<br>0 1 2 3 0 10 20 30 40 50 60<br>V DS I D<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>40 30<br>25<br>| | | | fy<br>30<br>20<br>ee<br>2) 20 fe 15<br>eeeae<br>10<br>10<br>5<br>150 °C<br>25 °C<br>eae<br>0 0<br>0 2 4 6 0 5 10 15 20 25 30<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
8
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90 4.0<br>80<br>3.5<br>70 SUT PLL ELL ELLAAA)LI RRR aTT...Pr<br>3.0<br>a se 120 µA<br>60 aes tee<br>2.5<br>12 µA<br>98 %<br>50<br>2.0<br>40 TTT|LO LerTALL typ yy yy] iFeeee ee eeee<br>1.5<br>30 TTTa Ty Ty yy] eea<br>1.0<br>20 Fry.) typ tf py ia<br>10 PE YP PT EP pp py 0.5 eea<br>0 PTT TY PP y Py yy 0.0 FfPFE|eee| | | tttLEL 4<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j T j<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>[on [=A] [=OVSOCS”™*~“‘“‘*S*S*S*S**S*S*S*S*S*S] [°C] [*][~“TCSC‘“‘(‘CCSWNSW™Uparameters=—=—s=“‘CNSO#‘CW’NSCO#d] [°C]<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>
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10 [4] 10 [3]<br>25 °C<br>=====—=======——==— : 150 °C ———<br>rt | | | | [| —| —| [| — —| | — — 7 | [| 25 °C, 98% eeee ee ee<br>150 °C, 98%<br>10 [3] === Ciss a<br>10 [2]<br>S55 S=S= SS == >= =e eee eeea<br>Coss<br>10 [2]<br>Besse FF<br>=SSSSSS=S===—_—— (3:<br>Se CL PAA<br>10 [1]<br>10 [1] | PSN Crss Ed =e<br>==S===5====————— ooEe ——<br>FORE EEL rs<br>10 [0] 10 [0]<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0<br>V DS V SD<br>C =f( V DS V GS f I F=f( V SD T j<br>[yn [-OVi=iMHes™~*~=“] [Vv] [~][*~*~“‘~*é‘*rS*‘“‘(m] MME OOO”~*~“‘COSNSN#N#NWNSC#Cié‘“‘[Vv]<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
9
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COOOSOSOCSCSCSCSCSCSCSCSCSC‘C*d Gate charge waveforms<br>**----- End of picture text -----**<br>
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Final Data Sheet
10
Final Data Sheet
11
BSZ440N10NS3 G
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.1|2015-02-06|Insert pin numbered package drawing and trr and Qrr values|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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