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BSZ215CHXTMA1
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 5.1 A, 0.041 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: OptiMOS 2 Series
- Qualification: AEC-Q101
- Transistor Case Style: TSDSON
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 5.1A
- Continuous Drain Current Id P Channel: 5.1A
- Drain Source On State Resistance N Channel: 0.041ohm
- Drain Source On State Resistance P Channel: 0.041ohm
| Delivery and price | |
|---|---|
| Units per pack | 15000 |
| Price | 0.408 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSZ215C H**
## **OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor**
## **Product Summary**
## **Features**
|**Features**||||**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Complementary P + N channel||||||||||||||||||**P**|||**N**||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|Enhancement mode||||_V_DS||||DS||||||||||-20|||20|||V|
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|Super Logic level (2.5V rated)||||_R_DS(on),max|||||||_V_GS=±4.5 V|||||||150|||55|||mW|
||||||||||||||||||||||||||
|Common drain|||||||||||_V_GS=±2.5 V|||||||310|||95||||
||||||||||||||||||||||||||
||||||||||||||||||||||||||
|Avalanche rated||||_I_D||||||||||||||-3.2|||5.1|||A|
||||||||||||||||||||||||||
|175 °C operating temperature<br>Qualified according to AEC Q101<br>100% lead-free; RoHS compliant<br>Halogen-free according to IEC61246-21<br>2S<br>RoHs,-<br>——{—<br>ro<br>Keg® * S/ (Gi,Halogen-Free|||S1<br>Gi<br>G2<br>S2[4|[4||||PS] <br>f <br>lsD1/2<br>12}|||||Di/2<br> D1/2 <br>D1/2<br> D1/2|PG-TSDSON-8LT1<br> }<br>oS<br>4<br>“29|||||||||||
||||||||||||||||||||||||||
|Type<br>Package|||Marking|Marking||||Lead Free|||||Halogen Free||||||||Packing||||
||||||||||||||||||||||||||
|BSZ215C H<br>PG-TSDSON-8 LTI|||215C|||||Yes|||||Yes||||||||Non dry||||
- Complementary P + N channel
- Enhancement mode
- Super Logic level (2.5V rated)
- Common drain
- Avalanche rated
- 175 °C operating temperature
- Qualified according to AEC Q101
- 100% lead-free; RoHS compliant
- Halogen-free according to IEC61246-21
> [1)]
**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified
|**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified[1)]||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**||**Unit**|
||||**P**|**N**||
|Continuous drain current|_I_D|_T_A=25 °C|-3.2|5.1<br>A|A|
|||_T_A=100 °C|-2.2|3.6||
|Pulsed drain current|_I_D,pulse|_T_A=25 °C|-13|20||
|Avalanche energy, single pulse|_E_AS|P:_I_D=-3.2 A,<br>N:_I_D=5.1 A,<br>_R_GS=25W|11|11<br>mJ|mJ|
|Gate source voltage|_V_GS||V<br>±12||V|
|Power dissipation|_P_tot<br>2)|_T_A=25 °C|W<br>2.5||W|
|Operating and storage temperature|_T_j,_T_stg||°C<br>-55 ... 175||°C|
|ESD class||JESD22-A114-HBM|0 (<250V)|||
|Soldering temperature|_T_solder||°C<br>260||°C|
|IEC climatic category; DIN IEC 68-1|||55/175/56|||
- 1) Remark: only one of both transistors active
Rev 2.03
page 1
2016-10-04
**BSZ215C H**
|Cinfineon|||**BSZ215C H**<br>|
|---|---|---|---|
|**Parameter**<br>**Thermal characteristics**<br>~~ee~~|~~ee~~|**Symbol Conditions**<br>~~ee~~<br>~~ee ~~|**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~<br> ~~ee~~|
|Thermal resistance, junction -<br>case|P<br>N|_R_thJC|-<br>-<br>8<br>K/W|
|Device on PCB||_R_thJA<br>6 cm2cooling area2)|-<br>-<br>60<br>K/W|
**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified
|**Static characteristics**||||||||
|---|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|P|_V_(BR)DSS|_V_GS=0 V,_I_D=-250 µA|-|-|-20|V|
||N<br>~~eee~~|~~eee~~|_V_GS=0 V,_I_D=250 µA<br>~~eee~~|20<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~||
|Gate threshold voltage|P<br>~~i~~|_V_GS(th)<br>~~i~~|_V_DS=_V_GS,_I_D=-110 µA|-1.4|-1.0|-0.7||
||N<br>~~i~~<br>ie||_V_DS=_V_GS,_I_D=110 µA|0.8<br>~~tf~~|1.1<br>~~tf~~|1.4<br>~~tf~~||
|Zero gate voltage drain current|P<br>~~|~~<br>ie|_I_DSS<br>~~| it~~<br>~~ep~~|_V_DS=-20 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~it~~|-<br>~~it~~<br>~~tf~~|-<br>~~it~~<br>~~tf~~|-0.1<br>~~it~~<br>~~tf~~|µA|
||N<br>ie||_V_DS=20 V,_V_GS=0 V,<br>_T_j=25 °C|-<br>~~tf~~|-<br>~~tf~~|0.1<br>~~tf~~||
||P<br>~~ee~~||_V_DS=-20 V,_V_GS=0 V,<br>_T_j=175 °C<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|-50||
||N<br>~~ee~~<br>~~ep~~||_V_DS=20 V,_V_GS=0 V,<br>_T_j=175 °C<br>~~ee ~~<br>~~ep~~|-<br> ~~ee ~~<br>~~ep~~|-<br> ~~ee~~<br>~~ep~~|50<br>~~ep~~||
|Gate-source leakage current|P<br>~~oe~~|_I_GSS<br>~~oe~~|_V_GS=±12 V,_V_DS=0 V<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|±100<br>~~ee~~|nA|
||N<br>~~oe~~|||||||
|Drain-source on-state<br>resistance|P<br>~~Pit~~|_R_DS(on)<br>~~Pit~~<br>~~Pit~~<br>|_V_GS=-2.5 V,<br>_I_D=2.1 A<br>~~Pit~~|-<br>~~Pit~~|144<br>~~Pit~~|310<br>~~Pit~~|mW|
||N<br>~~es~~||_V_GS=2.5 V,_I_D=1.9 A<br>|-<br>|63<br>|95<br>||
||P<br>~~Pit~~||_V_GS=-4.5 V,_I_D=-3.2 A<br>~~Pit~~|-<br>~~Pit~~|95<br>~~Pit~~|150<br>~~Pit~~||
||N<br>~~Oe ~~||_V_GS=4.5 V,_I_D=5.1 A<br> ~~es~~|-<br>~~es~~|41<br>~~es~~|55<br>~~es~~||
|Transconductance|P<br>~~eee~~|_g_fs<br>~~eee~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-2.2 A<br>~~eee~~|4<br>~~eee~~|7.9<br>~~eee~~|-<br>~~eee~~|S|
||N<br>~~eee~~<br>~~Eto~~|||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=3.6 A<br>~~eee~~<br>~~|~~|5.5<br>~~eee~~<br>~~tf~~|11<br>~~eee~~<br>~~tf~~|-<br>~~eee~~<br>~~tf~~||
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
Rev 2.03
page 2
2016-10-04
**BSZ215C H**
|**Parameter**||**Symbol **|**Conditions**|**Values**|**Unit**|
|---|---|---|---|---|---|
|||||**min.**<br>**typ.**<br>**max.**||
|**Dynamic characteristics**<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time|P<br>_C_iss<br>N<br>P<br>_C_oss<br>N<br>P<br>Crss<br>N<br>P<br>_t_d(on)<br>N<br>P<br>_t_r<br>N<br>~~a~~<br>~~-~~<br>~~fp~~<br>~~**a**~~<br>~~**a**~~<br>~~4~~<br>~~a~~||-<br>300<br>400<br>-<br>315<br>419<br>-<br>92<br>120<br>-<br>114<br>152<br>-<br>92<br>140<br>-<br>16<br>24<br>-<br>7.4<br>-<br>-<br>4.9<br>-<br>-<br>3.7<br>-<br>-<br>2.0<br>-<br>_V_GS=0 V,<br>P:_V_DS=-10 V,<br>N:_V_DS= 10 V,<br>_f_=1 MHz<br>P:_V_DD=-10 V,<br>_V_GS=-4.5 V,_R_G=6W,<br>_I_D=-3.2 A<br>~~ft~~<br>~~of~~<br>~~>~~<br>~~**Ff**~~<br>~~f~~<br>~~|~~<br>~~|~~<br>~~Ff~~<br>~~**F**f~~<br>~~f~~||pF<br>ns|
|Turn-off delay time|P<br>a|_t_d(off)|N:_V_DD=10 V,|-<br>11.3<br>-<br>=10 V,<br>~~Ff~~||
|Fall time|N<br>P<br>~~a~~<br>a|_t_f|_V_GS=4.5 V,_R_G=6W,<br>_I_D=5.1 A|-<br>12.2<br>-<br>-<br>4.7<br>-<br>~~Ff~~<br>~~Ff~~||
||N<br>~~a~~|||-<br>1.4<br>-<br>~~Ff~~||
|Gate Charge Characteristics||||||
|Gate to source charge|P|_Q_gs||-<br>-0.58<br>-0.8|nC|
|Gate to drain charge||_Q_gd|_V_DD=-10 V,<br>_I_D=-3.2 A,|-<br>-1.3<br>-1.7||
|Switching charge||_Q_g|_V_GS=0 to -4.5 V|-<br>-3.0<br>-4.6||
|Gate plateau voltage||_V_plateau||-<br>-1.9<br>-||
|Gate to source charge|N|_Q_gs||-<br>0.7<br>1.0||
|Gate to drain charge||_Q_gd|_V_DD=10 V,<br>_I_D=5.1 A,|-<br>0.4<br>-||
|Switching charge||_Q_g|_V_GS=0 to 4.5 V|2.1<br>2.8||
|Gate plateau voltage||_V_plateau||2.3||
Rev 2.03
page 3
2016-10-04
**BSZ215C H**
|Diode continuous forward current|P<br>~~a~~|_I_S|_T_C=25 °C|-<br>~~Py~~|-<br>~~Py~~|-2.1<br>~~Py~~|A|
|---|---|---|---|---|---|---|---|
||N|||||2.3||
|Diode pulse current|P|_I_S,pulse||-|-|-13||
||N<br>~~a~~|||~~PT~~|~~PT~~|20<br>~~PT~~||
|Diode forward voltage|P<br>~~ia~~|_V_SD<br>~~ia~~<br>~~Pf~~<br>~~4~~|_V_GS=0 V,_I_F=3.2 A,<br>_T_j=25 °C<br>~~ia~~|-<br>~~ia~~|-0.98<br>~~ia~~|-1.2<br>~~ia~~|V|
||N<br>~~ia~~<br>~~Pf~~<br>~~4~~||_V_GS=0 V,_I_F=5.1 A,<br>_T_j=25 °C<br>~~ia~~<br>~~Pf~~|-<br>~~ia~~<br>~~Pf~~<br>|0.9<br>~~ia~~<br>~~Pf~~<br>|1.2<br>~~ia~~<br>~~Pf~~<br>~~=~~||
|Reverse recovery time|P<br>~~F~~<br>~~4~~|_t_rr<br>~~F~~<br>~~4~~|_V_R=±10 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs|~~et~~|12.2<br>~~et~~|~~et=~~|ns|
||N<br>~~F~~<br>~~4~~|||-<br>~~et~~|10.9<br>~~et~~|-<br>~~et=~~||
|Reverse recovery charge|P<br>~~4~~|_Q_rr<br>~~4~~||~~Pf~~|4.6<br><br>~~Pf~~|~~=~~<br>~~Pf~~|nC|
||N<br>~~4~~<br>~~|~~|||-<br><br>~~Pt~~|3.4<br><br>~~Pt~~|-<br>~~=~~<br>~~Pt~~||
Rev 2.03
page 4
2016-10-04
**BSZ215C H**
## **1 Power dissipation (P)**
_P_ tot=f( _T_ A)
## **2 Power dissipation (N)**
_P_ tot=f( _T_ A)
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**----- Start of picture text -----**<br>
3 3<br>2.5 2.5<br>2 2<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br> [W] [W]<br>tot tot<br>P P<br>**----- End of picture text -----**<br>
## **3 Drain current (P)**
_I_ D=f( _T_ A)
parameter: _V_ GS≤-4.5 V
## **4 Drain current (N)**
_I_ D=f( _T_ A) parameter: _V_ GS≥4.5 V
**==> picture [445 x 267] intentionally omitted <==**
**----- Start of picture text -----**<br>
3.5 5.5<br>5<br>—-<br>3<br>4.5<br>2.5 4<br>3.5<br>2 -<br>3<br>- 2.5<br>1.5<br>2<br>1 \-<br>1.5<br>1<br>0.5<br>0.5<br>|<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br> [A] -I D [A] I D<br>**----- End of picture text -----**<br>
Rev 2.03
page 5
2016-10-04
**BSZ215C H**
## **5 Safe operating area (P)**
_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 parameter: _t_ p
**==> picture [227 x 267] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2]<br>1 µs<br>10 [1 ]<br>10 µs<br>100 µs<br>1 ms<br>10 ms<br>10 [0 ]<br>DC<br>10 [-1]<br>10 [-2 ]<br>10 [-1 ] 10 [1 ] 10 [2 ]<br>-V DS [V]<br> [A]<br>D<br>-I<br>**----- End of picture text -----**<br>
## **7 Max. transient thermal impedance (P)**
_Z_ thJA=f( _t_ p)
parameter: _D_ = _t_ p/ _T_
**==> picture [225 x 268] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2 ]<br>0.5<br>0.2<br>10 [1 ]<br>0.1<br>0.05<br>0.02<br>0.01<br>single pulse<br>10 [0 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10<br>t p [s]<br> [K/W]<br>thJA<br>Z<br>**----- End of picture text -----**<br>
## **6 Safe operating area (N)**
_I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0
parameter: _t_ p
**==> picture [226 x 235] intentionally omitted <==**
**----- Start of picture text -----**<br>
1 µs<br>10 µs<br>10 [1 ]<br>100 µs<br>1 ms<br>10 ms<br>10 [0 ]<br>DC<br>10 [-1 ]<br>10 [-2 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br>
## **8 Max. transient thermal impedance (N)**
_Z_ thJA=f( _t_ p)
parameter: _D_ = _t_ p/ _T_
**==> picture [226 x 268] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2 ]<br>0.5<br>0.2<br>10 [1 ]<br>0.1<br>0.05<br>0.02<br>0.01<br>single pulse<br>10 [0 ]<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10<br>t p [s]<br> [K/W]<br>thJA<br>Z<br>**----- End of picture text -----**<br>
Rev 2.03
page 6
2016-10-04
**BSZ215C H**
## **9 Typ. output characteristics (P)**
_I_ D=f( _V_ DS); _T_ j=25 °C
parameter: _V_ GS
## **10 Typ. output characteristics (N)**
_I_ D=f( _V_ DS); _T_ j=25 °C
parameter: _V_ GS
**==> picture [467 x 643] intentionally omitted <==**
**----- Start of picture text -----**<br>
20 20<br>4.5 V<br>10 V<br>10 V<br>18 4.5 V 18 3.5 V<br>3 V<br>16 3.3 V 16<br>14 14<br>12 3 V 12<br>10 10<br>2.5 V<br>8 8 2.5 V<br>2.3 V<br>6 6<br>2.3 V<br>4 2 V 4<br>1.8 V<br>2 2 2 V<br>1.8 V<br>0 0<br>0 1 2 3 0 1 2 3<br>V DS [V] VDS [V]<br>11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N)<br>R DS(on)=f( I D); T j=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>280 120<br>240<br>100<br>1.8 V<br>2.2 V<br>200<br>2 V 80<br>2.2 V<br>160 2.5 V<br>2.5 V<br>3 V 60<br>3 V<br>120<br>3.3 V<br>3.5 V<br>4.5 V 4.5 V<br>40<br>6 V<br>80 6 V<br>20<br>40<br>0 ae 0<br>0 2 4 6 8 0 2 4 6 8<br>I D [A] I D [A]<br>Rev 2.03 page 7<br> [A] I D ID [A]<br>]<br>] W W<br> [m [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>
Rev 2.03
2016-10-04
**BSZ215C H**
## **13 Typ. transfer characteristics (P)**
_I_ D=f( _V_ GS); | _V_ DS |>2 | ID| RDS(on)max parameter: _T_ j
## **14 Typ. transfer characteristics (N)**
_I_ D=f( _V_ GS); _|V DS |>2 | I D | R DS(on)max_ parameter: _T_ j
**==> picture [470 x 592] intentionally omitted <==**
**----- Start of picture text -----**<br>
6 6<br>5 5<br>4 | 4 |<br>3 3<br>2 2<br>175 °C<br>1 25 °C 1 175 °C<br>25 °C<br>0 Ai 0 g<br>0 1 2 3 0 1 2 3<br>-V GS [V] V GS [V]<br>15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)<br>R DS(on)=f( T j); I D=-3.2 A; V GS=-4.5 V R DS(on)=f( T j); I D=5.1A; V GS=4.5 V<br>240 100<br>90<br>200<br>80<br>70<br>160 max<br>60 max<br>120 50<br>typ typ<br>40<br>80<br>30<br>20<br>40<br>10<br>0 eae 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br> [A] [A]<br>-I D I D<br>] ]<br>W W<br>[m [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>
**==> picture [268 x 11] intentionally omitted <==**
**----- Start of picture text -----**<br>
T j [°C] T j [°C]<br>**----- End of picture text -----**<br>
Rev 2.03
page 8
2016-10-04
**BSZ215C H**
## **17 Typ. gate threshold voltage (P)**
_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-110 µA
## **18 Typ. gate threshold voltage (N)**
_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=110 µA
**==> picture [470 x 587] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.6 1.6<br>max<br>max<br>1.2 1.2<br>typ<br>typ<br>p ee ] B R min E A<br>0.8 min 0.8<br>0.4 0.4<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>19 Typ. capacitances (P) 20 Typ. capacitances (N)<br>C =f( V DS); V GS=0 V; f =1 MHz C =f( V DS); V GS=0 V; f =1 MHz<br>10 [3 ] 10 [3 ]<br>Ciss<br>Ciss<br>Coss<br>10 [2 ]<br>Coss<br>10 [2 ]<br>Crss<br>Crss<br>10 [1 ]<br>10 [1 ] ro 10 [0 ] Ae<br>0 10 20 0 5 10 15 20<br>-V DS [V] V DS [V]<br> [V] [V]<br>GS(th) GS(th)<br>-V V<br> [pF] [pF]<br>C C<br>**----- End of picture text -----**<br>
Rev 2.03
page 9
2016-10-04
**BSZ215C H**
## **21 Forward characteristics of reverse diode (P)**
_I_ F=f( _V_ SD)
parameter: _T_ j
## **22 Forward characteristics of reverse diode (N)**
_I_ F=f( _V_ SD) parameter: _T_ j
**==> picture [465 x 610] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [1 ] 10 [1 ]<br>25 °C<br>175 °C 175 °C<br>25 °C<br>10 [0 ] 10 [0 ]<br>max, 175°C<br>10 [-1 ] 10 [-1 ]<br>175 °C, max<br>max, 25 °C<br>25 °C, max<br>IE<br>10 [-2 ] 10 [-2 ]<br>0 0.5 1 1.5 2 0 0.4 0.8 1.2 1.6<br>-V SD [V] V SD [V]<br>23 Avalanche characteristics (P) 24 Avalanche characteristics (N)<br>=f( t AV); ); R GS=25 W=25 WW I AS=f( t AV); R GS=25 W<br>parameter: T j(start) parameter: T j(start)<br>10 [1 ] 10 [1 ]<br>25 °C<br>25 °C 100 °C<br>100 °C 150 °C<br>150 °C<br>10 [0 ] 10 [0 ]<br>10 [-1 ] 10 [-1 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [0 ] 10 [1 ] 10 [2 ] 10<br>t AV [µs] t AV [µs]<br> [A] -I F [A] I F<br> [A] [A]<br>-I AV I AV<br>**----- End of picture text -----**<br>
## **23 Avalanche characteristics (P)**
_I_ AS=f( _t_ AV); ); _R_ GS=25 W=25 WW parameter: _T_ j(start)
Rev 2.03
page 10
2016-10-04
**BSZ215C H**
## **25 Typ. gate charge (P)**
_V_ GS=f( _Q_ gate); _I_ D=-3.2A pulsed parameter: _V_ DD
## **26 Typ. gate charge (N)**
_V_ GS=f( _Q_ gate); _I_ D=5.1A pulsed parameter: _V_ DD
**==> picture [465 x 610] intentionally omitted <==**
**----- Start of picture text -----**<br>
6 6<br>5 5<br>-4 V -16 V<br>4 V 10 V<br>-10 V<br>4 4<br>16 V<br>3 3<br>Uv<br>2 2<br>1 1<br>0 [ 0 ;Wi<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3<br>-Q gate [nC] Q gate [nC]<br>27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)<br> BR(DSS)=f(=f( T j); ); I D=-250 µA=-250 µA V BR(DSS)=f( T j); I D=250 µA<br>25 25<br>24 24<br>23 23<br>22 22<br>21 21<br>20 20<br>19 19<br>18 18<br>17 17<br>16 16<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br> [V] [V]<br>GS GS<br>-V V<br> [V] [V]<br>BR(DSS) BR(DSS)<br>-V V<br>**----- End of picture text -----**<br>
## **27 Drain-source breakdown voltage (P)**
_V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=-250 µA=-250 µA
Rev 2.03
page 11
2016-10-04
**BSZ215C H**
**Package Outline PG-TSDSON-8LTI**
## **PG-TSDSON-8LTI : Outline**
Dimensions in mm
Rev 2.03
page 12
2016-10-04
## BSZ215C H
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.3|2016-10-06|Update package drawing|
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
13
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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