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BSZ160N10NS3GATMA1
Power MOSFET, N Channel, 100 V, 40 A, 0.016 ohm, PG-TSDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 3
- Qualification: -
- Power Dissipation: 63W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TSDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 0.016ohm
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.513 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MOSFET BSZ160N10NS3 Final **BSZ160N10NS3 G** ## **OptiMOS[TM] 3 Power-Transistor** ## **Features** - Ideal for high frequency switching - Optimized technology for DC/DC converters ## **Product Summary** |**Product Summary**||| |---|---|---| |||V| |_V_DS|100|| |||mW| |_R_DS(on),max|16|| |||A| |_I_D|40|| - Excellent gate charge x _R_ DS(on) product (FOM) - N-channel, normal level ## PG-TSDSON-8 - 100% avalanche tested - Pb-free plating; RoHS compliant - Qualified according to JEDEC[1)] for target applications - Halogen-free according to IEC61249-2-21 |S/|®Halogen-Free|Halogen-Free| |---|---|---| |**Type**|**Package**|**Marking**| |||| |BSZ160N10NS3 G|PG-TSDSON-8|160N10N| **Maximum ratings,** at _T_ A=25 °C, unless otherwise specified |**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_V_GS=10 V,_T_C=25 °C|40<br>A<br>28<br>8<br>160<br>80<br>mJ|A<br>mJ| |||_V_GS=10 V,_T_C=100 °C||| |||_V_GS=10 V,_T_A=25 °C,<br>_R_thJA=60 K/W2)||| |Pulsed drain current3)|_I_D,pulse|_T_C=25 °C||| |Avalanche energy, single pulse4)|_E_AS|_I_D=20 A,_R_GS=25W||| |Gate source voltage|_V_GS||±20<br>V|V| - 1) J-STD20 and JESD22 - 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. - 3) See Diagram 3 for more detailed information - 4) See Diagram 13 for more detailed information Rev. 2.1 page 1 2015-09-17 **BSZ160N10NS3 G** **Maximum ratings,** at _T_ A=25 °C, unless otherwise specified |**Parameter**||**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---|---| |Power dissipation||_P_tot|_T_C=25 °C||63||W| ||||_T_A=25 °C,<br>_R_thJA=60 K/W2)||2.1||| |Operating and storage temperature||_T_j,_T_stg||-55 ... 150|||°C| |IEC climatic category; DIN IEC 68-1||||55/150/56|||| |**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~<br>~~ee ee~~|||||||| |**Thermal characteristics**|||||||| |Thermal resistance, junction - case<br>_R_thJC<br>-<br>-<br>2.1<br>K/W<br>Device on PCB<br>_R_thJA<br>minimal footprint<br>-<br>-<br>62<br>6 cm2cooling area2)<br>-<br>-<br>60<br>~~a~~|||||||| |**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified||||| ## **Static characteristics** |Drain-source breakdown voltage|_V_(BR)DSS <br>~~PE=Frr~~|_V_GS=0 V,_I_D=1 mA<br>~~PE=Frr~~|100<br>~~PE=Frr~~|-<br>~~PE=Frr~~|-<br>~~PE=Frr~~|V| |---|---|---|---|---|---|---| |Gate threshold voltage|_V_GS(th)<br>~~PE=Frr~~|_V_DS=_V_GS,_I_D=33 µA<br>~~PE=Frr~~|2<br>~~PE=Frr~~|2.8<br>~~PE=Frr~~|3.5<br>~~PE=Frr~~|| |Zero gate voltage drain current|_I_DSS<br>~~PE=Frr~~<br>~~-—_}~~|_V_DS=100 V,_V_GS=0 V,<br>_T_j=25 °C<br>~~PE=Frr~~<br>~~—_}~~|-<br>~~PE=Frr~~<br>~~—_}ff~~|0.1<br>~~PE=Frr~~<br>~~ff~~|1<br>~~PE=Frr~~<br>~~ff~~|µA| |||_V_DS=100 V,_V_GS=0 V,<br>_T_j=125 °C<br>~~PE=Frr~~<br>~~—_}~~|-<br>~~PE=Frr~~<br>~~—_}ff~~|10<br>~~PE=Frr~~<br>~~ff~~|100<br>~~PE=Frr~~<br>~~ff~~|| |Gate-source leakage current|_I_GSS<br>~~PE=Frr~~<br>~~-—_}~~|_V_GS=20 V,_V_DS=0 V<br>~~PE=Frr~~<br>~~—_}~~|-<br>~~PE=Frr~~<br>~~—_}ff~~|10<br>~~PE=Frr~~<br>~~ff~~|100<br>~~PE=Frr~~<br>~~ff~~|nA| |Drain-source on-state resistance|_R_DS(on)<br>~~-—_}~~<br>~~rt~~|_V_GS=10 V,_I_D=20 A<br>~~—_}~~<br>~~rt~~|-<br>~~—_} ff~~<br>~~rt~~|14<br>~~ff~~<br>~~rt~~|16<br>~~ff~~<br>~~rt~~|mW| |||_V_GS=6 V,_I_D=10 A<br>~~rt~~|-<br>~~rt~~|18<br>~~rt~~|33<br>~~rt~~|| |Gate resistance|_R_G<br>~~rt~~|~~rt~~|-<br>~~rt~~|1.4<br>~~rt~~|-<br>~~rt~~|W| |Transconductance|_g_fs<br>~~CC~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=20 A<br>~~CC~~|16<br>~~CC~~|33<br>~~CC~~|-<br>~~CC~~|S| Rev. 2.1 page 2 2015-09-17 **BSZ160N10NS3 G** **Parameter Symbol Conditions Values Unit min. typ. max.** ~~2~~ |**Parameter**<br>~~2~~|**Symbol **<br>~~2~~|**Conditions**<br>~~2~~|**min.**<br>~~2~~|**typ.**<br>**Values**<br>~~2~~|**max.**<br>~~2~~|**Unit**<br>~~2~~| |---|---|---|---|---|---|---| |**Dynamic characteristics**||||||| |Input capacitance|_C_iss||-|1300|1700|pF| |Output capacitance|_C_oss|_V_GS=0 V,_V_DS=50 V,<br>_f_=1 MHz|-|240|320|| |Reverse transfer capacitance|Crss||-|11|-|| |Turn-on delay time|_t_d(on)||-|13.0|-|ns| |Rise time|_t_r|_V_DD=50 V,_V_GS=10 V,|-|10.0|-|| |Turn-off delay time|_t_d(off)|_I_D=10 A,_R_G,ext=1.6W|-|22.0|-|| |Fall time|_t_f||-|5.0|-|| |Gate Charge Characteristics5)||||||| |Gate to source charge|_Q_gs||-|5.7|-|nC| |Gate charge at threshold|_Q_g(th)||-|3.8|-|| |Gate to drain charge|_Q_gd|_V_DD=50 V,_I_D=10 A,|-|3.4|-|| |Switching charge|_Q_sw|_V_GS=0 to 10 V|-|5.3|-|| |Gate charge total|_Q_g||-|19|25|| |Gate plateau voltage|_V_plateau||-|4.2|-|V| |Output charge|_Q_oss|_V_DD=40 V,_V_GS=0 V|-|25|33|nC| |**Reverse Diode**||||||| |Diode continuous forward current|_I_S||-|-|40|A| |||_T_C=25 °C||||| |Diode pulse current|_I_S,pulse||-|-|160|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=20 A,<br>_T_j=25 °C|-|0.9|1.2|V| |Reverse recovery time|_t_rr|_V_R=50 V,_I_F=_10A_,|-|73|-|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|52|-|nC| 5) See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2015-09-17 **BSZ160N10NS3 G** _P_ tot=f( _T_ C) _I_ D=f( _T_ C); _V_ GS≥10 V ## **1 Power dissipation** ## **2 Drain current** **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>BEEEEEH<br>50<br>PNP<br>40 Nee<br>30<br>20 po Ne<br>10 Poo<br>0 PEN}<br>0 25 50 75 100 125 150 175<br>T C [°C]<br> [W]<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [225 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35 EERE<br>30 PP PNEr<br>25<br>20<br>15<br>pp<br>10<br>EEA<br>5<br>0 be<br>0 25 50 75 100 125 150 175<br>T C [°C]<br> [A]<br>I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p **4 Max. transient thermal impedance** _Z_ thJC=f( _t_ p) parameter: _D_ = _t_ p/ _T_ **==> picture [467 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3 ] 10<br>limited by on-state<br>resistance<br>1 µs<br>10 [2 ]<br>ary 10 µs 1 0.5 EE<br>DC<br>100 µs 0.2<br>. ff<br>10 [1 ]<br>0.1<br>\ 0.1 0.05 A<br>1 ms<br>10 [0 ] 0.02<br>0.01<br>10 ms<br>single pulse<br>0.01 0 0 0 0 0 0 1<br>10 [-1 ]<br>10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>V DS [V] t p [s]<br> [A] [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br> Rev. 2.1 page 4 2015-09-17 **BSZ160N10NS3 G** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [468 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 100 40<br>9 V 7 V<br>10 V 8 V 36<br>6 V<br>80 32<br>5 V<br>28<br>/ Hy e S<br>60 24 J Jy<br>5.5 V<br>20 5.5 V 6 V<br>7 V<br>40 16 8 V<br>5 V 9 V<br>10 V<br>12<br>20 4.5 V 8<br>4<br>0 pectin 0 Beet<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>80 40<br>60 PA 30 LL<br>40 Pere 20 LLL<br>20 Perea 10 WAL<br>150 °C<br>25 °C<br>p oe<br>0 0<br>0 1 2 3 4 5 6 7 0 10 20 30 40 50<br>V GS [V] I D [A]<br>]<br>W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j Rev. 2.1 page 5 2015-09-17 **BSZ160N10NS3 G** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=20 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS **==> picture [468 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 40 4<br>35<br>30 3 330 µA<br>33 µA<br>25<br>20 98% A 2 S<br>15<br>Typ<br>10 1<br>5<br>ni<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> =f( V DS); ); V GS=0 V; =0 V; f =1 MHz I F=f( V SD)<br>parameter: T j<br>10 [4 ] 1000<br>Ciss<br>=== ><br>10 [3 ]<br>150 °C<br>100<br>25 °C, max<br>Coss<br>25 °C<br>10 [2 ] 150 °C, max<br>rr ) | fr<br>10<br>Crss<br>10 [1 ]<br>10 [0 ] Ssette 1 f|/<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>]<br>W<br>[m [V]<br>DS(on) GS(th)<br>R V<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); ); _V_ GS=0 V; =0 V; _f_ =1 MHz Rev. 2.1 page 6 2015-09-17 **BSZ160N10NS3 G** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 W parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=10 A pulsed parameter: _V_ DD **==> picture [472 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 100 12<br>50 V<br>10<br>20 V<br>80 V<br>8<br>10 6<br>100 °C 25 °C<br>125 °C<br>4<br>2<br>1 0<br>0.1 1 10 100 1000 0 5 10 15 20<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V BR(DSS)=f( T j); I D=1 mA<br>110<br>V GS<br>Q g<br>105<br>100<br>V gs(th)<br>95<br>Q g(th) Q sw Q gate<br>90 Q gs Q gd<br>-60 a -20 20 60 100 aa 140 180<br>T j [°C]<br> [A] [V]<br>I AV V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Rev. 2.1 page 7 2015-09-17 **BSZ160N10NS3 G** ## **Package Outline: PG-TSDSON-8** Dimensions in mm **Footprint** Rev. 2.1 page 8 2015-09-17 OptiMOS™ 3 Power BSZ160N10NS3 Transistor BSZ160N10NS3 BSZ160N10NS3 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.1|2015-10-05|Update Id condition for Vgs(th) and Tj to Ta condition for "Maximum ratings"| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** 10
Updated at April 11, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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