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BSZ146N10LS5ATMA1
Power MOSFET, N Channel, 100 V, 40 A, 0.0146 ohm, TSDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 52W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 0.0146ohm
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.585 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSZ146N10LS5** ## **MOSFET** ## **OptiMOS[TM]** ## **Features** * Optimized technology for DC/DC converters « Excellent gate charge x _R_ DS(on) product |**Parameter**<br>Table 1<br>Key Performance|**Value**<br>Performance Parameters|**Unit**<br>Parameters| |---|---|---| |_V_DS|100|V| |_R_DS(on),max|14.6|mΩ| |_I_D|40|A| |QOSS|20|nC| |QG(0V..4.5V)|8|nC| **==> picture [137 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> (enlarged source interconnection)<br>eo tz, ass,<br>. Ae<br>2™<br>D 3<br>S 1 8 D<br>S 2 | c 7 D<br>S 3 1 I h 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~| |---|---|---|---| |BSZ146N10LS5<br>~~Type/OrderingCode |~~|PG-TSDSON-8 FL<br>~~|~~<br>~~|~~|146N10L|-<br>~~Related Links~~| 1) J-STD20 and JESD22 Final Data Sheet 1 **OptiMOS[TM] 5�Power-Transistor,�100�V BSZ146N10LS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.�2.2,��2016-08-10 **OptiMOS[TM] 5�Power-Transistor,�100�V BSZ146N10LS5** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _TA_ =25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|40<br>28<br>9|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=60K/W1)| |Pulsed drain current2)|_I_D,pulse|-|-|160|A|_T_C=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|30|mJ|_I_D=20A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|52<br>2.1|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W1)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance,junction - case|_R_thJC|-|1.4|2.4|K/W|-| |Device on PCB,<br>minimal footprint|_R_thJA|-|-|62|K/W|-| |Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.2,��2016-08-10 **OptiMOS[TM] 5�Power-Transistor,�100�V BSZ146N10LS5** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=23µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|16.0<br>12.4|20.8<br>14.6|mΩ|_V_GS=4.5V,_I_D=10A<br>_V_GS=10V,_I_D=20A| |Gate resistance1)|_R_G|-|1|1.5|Ω|-| |Transconductance|_g_fs|18|36|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|1000|1300|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Output capacitance1)|_C_oss|-|170|220|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|9|15|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|4.7|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|3.2|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|14.3|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|3.2|-|ns|_V_DD=50V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω| |**Table6Gatechargecharacteristics2)**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|3.2|-|nC|_V_DD=50V,_I_D=20A,_V_GS=0to4.5V| |Gate charge at threshold|_Q_g(th)|-|1.6|-|nC|_V_DD=50V,_I_D=20A,_V_GS=0to4.5V| |Gate to drain charge1)|_Q_gd|-|2.8|4.1|nC|_V_DD=50V,_I_D=20A,_V_GS=0to4.5V| |Switchingcharge|_Q_sw|-|4.4|-|nC|_V_DD=50V,_I_D=20A,_V_GS=0to4.5V| |Gate charge total1)|_Q_g|-|7.6|9.5|nC|_V_DD=50V,_I_D=20A,_V_GS=0to4.5V| |Gate plateau voltage|_V_plateau|-|3.2|-|V|_V_DD=50V,_I_D=20A,_V_GS=0to4.5V| |Gate charge total|_Q_g|-|15|-|-|_V_DD=50V,_I_D=20A,_V_GS=0to10V| |Output charge1)|_Q_oss|-|20|27|nC|_V_DD=50V,_V_GS=0V| > 1) Defined by design. Not subject to production test > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.2,��2016-08-10 4 **OptiMOS[TM] 5�Power-Transistor,�100�V BSZ146N10LS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|40|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.88|1.1|V|_V_GS=0V,_I_F=20A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|26|52|ns|_V_R=50V,_I_F=20A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|19|38|nC|_V_R=50V,_I_F=20A,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test Final Data Sheet Rev.�2.2,��2016-08-10 5 **OptiMOS[TM]** 5 Power-Transistor, 100 V **BSZ146N10LS5** **==> picture [539 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 60 45<br>40<br>50<br>—s Z N<br>35<br>IKE ff :<br>40 FPN}fF IA ft OLE 30 aw| KNEE\<br>25<br>30<br>ee ee 20 TT TT IN f<br>20 15<br>10<br>10<br>5<br>0 0<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>P P tot=f( T C) O I D=f( T C V GS ≥ W<br>10 [3] 10 [1]<br>eeA ee el a a |<br>1 µs<br>10 [2] e t e FHM T L<br>e 0.5 a e<br>10 µs 10 [0]<br>DC 0.2<br>_ WT LaerTTT<br>10 [1]<br>SE EAS 100 µs at 0.1 LAAN TNT<br>0.05<br>7SSrte aOWSeatLINOeet peWAWY,EE<br>10 [-1] 0.02<br>10 [0] PP LTT AEE 1 ms SEE 0.01 FH HEHE<br>Fe FO ae CS<br>10 ms single pulse<br>Ce ONIN<br>Sail asiiliome\ Yama AAW Tl<br>10 [-1] PPEET CANCT 10 [-2] TUIE T T ELLIEE HE<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS[TM] BSZ146N10LS5** **==> picture [528 x 635] intentionally omitted <==** **----- Start of picture text -----**<br> 160 32<br>8 V 6 V<br>10 V<br>140 Py ytyy 7 V A 5.5 V ry] 28 ai<br>120 Ben)Wf// 5 V am— 24 geTELE|<br>4 V<br>4.5 V<br>100 WKHIY 20 > HO<br>5 V<br>Uf 4.5 V ae 5.5 V<br>80 16<br>6 V<br>— — |.=<br>7 V<br>60 12 10 V<br>| 4 V SSE<br>40 ») Zea 8 ee<br>20 CCA)y 4 EEREa<br>a<br>0 0<br>0 1 2 3 4 5 0 20 40 60 80 100<br>PCCCCEE |) ERR<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 60<br>ae ie Pf ff<br>50<br>60<br>ee a ee<br>25 °C 40<br>a see OK<br>150 °C<br>z 40 Ls 30 oe<br>| Yt | | |<br>SC | RB —~_ ff<br>20<br>| Ani<br>20<br>10<br>ae if | | | fj |<br>a| Poff<br>0 0<br>0 1 2 3 4 5 6 7 0 10 20 30 40 50<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS[TM]** 5 Power-Transistor, 100 V **BSZ146N10LS5** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 30 2.5<br>25<br>SESSeSnnnD 40 LLL EEE.<br>2.0<br>Pt Ett LL LL KYL —~<br>230 µA<br>20<br>PEt} / SL<br>1.5<br>Pt tT | Pe oS 23 µA<br>max 7 _<br> LL AY —— ~<br>15 eee<br>a7 4 Typ ane aN<br>ras ae 1.0 NS<br>ran “I<br>10<br>0.5<br>5<br>0 0.0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>— e 25 °C ee<br>Ee 150 °C SE<br>Rs : 25 °C max Po<br>a Rsaes [|1 150 °C max P ETETE| | tT EeeTT hE ht cE<br>Ciss<br>10 [3]<br>a eee eee SOUHHHHRRREDCAEEEDES<br>10 [2]<br>Coss<br>= SSS |_ eeBREESEae ae<br>eA] 10 [2] ee ee<br>—— | |)PS fg Oe<br>LLEVA<br>SEE—- sf 10 [1] Piitt Taag ee<br>10 [1] ———re eae Crss (==| | | E|EES| [J] [ gyi TT | [| [Je | EES7 7 JT 7<br>a ss<br>10 [0] RsPf esffes esftes 10 [0] oA<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM] BSZ146N10LS5** **==> picture [539 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>HHSe ee er eTtt 9 TITTY SY<br>a CCITT 8 TTL PL EELLL LAEY/<br>7<br>STL WA<br>cin | | YA 50 V<br>6 20 V<br>TINT 10 [1] : 5 AT 80 V<br>Seek RI NTIN 25 °C Jes DooHE<br>[| [ [iti TT<br>Yr TNTEAL 100 °C ON INCTU ULEmen 4 TTT/,AT TTT<br>FHA Vy<br>125 °C<br>3<br>CIE. FREE FH i<br>Ofte TPN NTT | pA EEL<br>2<br>LE EA -HNFHNG | AE TAT PELE y i<br>1<br>CULE LILITELIINEET NUTTIN\O LEN N UUI TATTTTALLEL TTT TT TTT<br>10 [0] 0 LEEL EEL<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>Py =28 parameter ——=C*=“‘*SCS!#*~s +» -=20Apulsed:parameter ——=Ss=“‘*‘*~*d<br>I AV V GS<br>**----- End of picture text -----**<br> Gate charge waveforms ~~[|~~ SS~*~—“~*S*sSC‘“ssCC—s—‘ssCs—‘“stststsSsS **==> picture [270 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>TCE<br>a LE LLL LL<br>a<br>a<br>ee<br>105<br>a<br>ee<br>ee<br>- COOP<br>ae 100<br>ee<br>ne a<br>ee<br>AEE<br>AT EELLIL LLL LL<br>95<br>a LL<br>Oe<br>Oe<br>Oe<br>90 a<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D<br>[ima O—~—‘“s*Ss*sSsSsSSOSSOSSCSY[°C] S<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS[TM] BSZ146N10LS5** Final Data Sheet 10 **OptiMOS[TM] BSZ146N10LS5** ## BSZ146N10LS5 ## Previous Revision |Revision|Date|Subjects (major changes since last revision)| |---|---|---| |2.0|2016-03-23|Release of final version| |2.1|2016-04-21|Update Gate threshold voltage (VGSth)| |2.2|2016-08-10|Update in Qrr and trr| ## **erratum@infineon.com** ## **Information** ## **www.infineon.com** ). ## **Warnings** Final Data Sheet 11
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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