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BSZ110N08NS5ATMA1
Power MOSFET, N Channel, 80 V, 40 A, 0.011 ohm, TSDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 50W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 0.011ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.477 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MOSFET **OptiMOS[TM] OptiMOS[ª]** 5 BSZ110N08NS5 Final ## 5 Power-Transistor, BSZ110N08NS5 80 V ## **OptiMOS[ª]** **==> picture [137 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> TSDSON-8 FL<br>(enlarged source interconnection)<br>a py Zoey,<br>. Fe<br>2™<br>1 4<br>S 1 8 D<br>S 2 T i l 7 D<br>S 3 | ( =) r f 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> ## **Features** **==> picture [200 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> * Optimized technology for DC/DC converters<br>* Excellent gate charge x R DS(on) product<br>* Very low on-resistance R DS(on)<br>**----- End of picture text -----**<br> **==> picture [447 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |S 2| |Parameter|1|Key|Performance|Value|Parameters|Unit|S 3|||(| |V|DS|80|V|G 4|L| |R|DS(on),max|11.0|m|Ω| |I|D|40|A| |Q|oss|19|nC| |Q|G(0V..10V)|15|nC| |(98)| |Package|Marking| |BSZ110N08NS5|PG-TSDSON-8 FL|110N08N|-| **----- End of picture text -----**<br> 1) J-STD20 and JESD22 Final Data Sheet 2 **OptiMOS[ª] 5�Power-Transistor,�80�V** BSZ110N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.�2.1,��2014-05-05 **OptiMOS[ª] 5�Power-Transistor,�80�V** BSZ110N08NS5 **==> picture [146 x 65] intentionally omitted <==** **2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-|-<br>-|40<br>33|A|_T_C=25°C<br>_T_C=100°C| |Pulsed drain current1)|_I_D,pulse|-|-|160|A|_T_C=25°C| |Avalanche energy, single pulse2)|_E_AS|-|-|40|mJ|_I_D=20A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-|-|50|W|_T_C=25°C| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56| ## **3�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance,junction - case|_R_thJC|-|1.5|2.5|K/W|-| |Device on PCB,<br>6 cm2cooling area3)|_R_thJA|-|-|60|K/W|-| > 1) See figure 3 for more detailed information > 2) See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet Rev.�2.1,��2014-05-05 4 BSZ110N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **OptiMOS[ª] 5�Power-Transistor,�80�V** ## **4�����Electrical�characteristics** ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|2.2|3|3.8|V|_V_DS=_V_GS,_I_D=22µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|9.6<br>13.4|11.0<br>16.3|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=6V,_I_D=5A| |Gate resistance|_R_G|-|1.4|2|Ω|-| |Transconductance|_g_fs|17|33|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance|_C_iss|-|1000|1300|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Output capacitance1)|_C_oss|-|180|235|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Reverse transfer capacitance1)|_C_rss|-|11|19|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|9|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Rise time|_t_r|-|3|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Fall time|_t_f|-|3|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|4.9|-|nC|_V_DD=40V,_I_D=20A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|3.3|5|nC|_V_DD=40V,_I_D=20A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|5.4|-|nC|_V_DD=40V,_I_D=20A,_V_GS=0to10V| |Gate charge total|_Q_g|-|15|18.5|nC|_V_DD=40V,_I_D=20A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|4.9|-|V|_V_DD=40V,_I_D=20A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|13|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge1)|_Q_oss|-|19|26|nC|_V_DD=40V,_V_GS=0V| > 1) Defined by design. Not subject to production test > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.1,��2014-05-05 5 BSZ110N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **OptiMOS[ª] 5�Power-Transistor,�80�V** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continous forward current|_I_S|-|-|40|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.88|1.2|V|_V_GS=0V,_I_F=20A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|36|72|ns|_V_R=40V,_I_F=20A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|36|72|nC|_V_R=40V,_I_F=20A,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test Final Data Sheet 6 Rev.�2.1,��2014-05-05 **OptiMOS[ª]** 5 Power-Transistor, BSZ110N08NS5 80 V **==> picture [539 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 60 50<br>40<br>40<br>PINE 30 ee ee<br>5 \ ,<br>ec | |. | i\E |<br>20<br>20<br>ee<br>10<br>0 BaaeNG 0 ee eee ee<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [1]<br>a a ee ee ee LC | Tit tT Tr TTTTT)<br>| | 1 µs UTA oe<br>10 [2]<br>eeI oS < 10 µs ae | HHH 0.5 LSsa e<br>10 [0]<br>0.2<br>—_ 0.1 TK | Tit TTT TT<br>100 µs<br>10 [1] 0.05<br>0.02<br>7EEE DC 1 ms 0.01 vei single pulse | TIME EU<br>YTNeelTTT UT UT TTIANG 10 ms N NHINI ll 10 [-1] 7AEEEAwwweee 0 A|LEI<br>10 [0] INA PEACEEE HE EE<br>YrpTeeeTCE NTNWT TUTTE TT TTT ONANTON TT|TTNET a a a a<br>10 [-1] OPC ANNIT 10 [-2] LAVA ETAL ELUTE ELIE El<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 7 ## **OptiMOS[ª]** 5 Power-Transistor, BSZ110N08NS5 80 V **==> picture [528 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 160 25<br>10 V 5 V<br>7 V 5.5 V<br>6 V<br>PT) 20 Ee<br>120 OP OT pg<br>ff<br>15<br>7 V<br>80 a |, ERoe<br>6 V<br>10 10 V<br>5.5 V<br>40<br>5<br>5 V<br>0 /-———- 0 EERE EEE<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>160 80<br>TTT LLL!)f| CELE Ls |<br>PTE) EEE aaer<br>120 60<br>TTA) Cee<br>/ a<br>80 40<br>. PP 2 PT<br>TTP) CVE<br>PTL TALL LV/| E<br>40 20<br>PTET YE) VEEP<br>150 °C<br>25 °C<br>0 T I A TT) 0 Pee<br>0 2 4 6 8 0 20 40 60 80 100<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 8 5 Power-Transistor, BSZ110N08NS5 80 V BSZ110N08NS5 ## **OptiMOS[ª]** **==> picture [528 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 25 PT Pt | fp pipe 4.0 Ff | | | | ft ft tt td<br>3.5<br>20 titi I—J_| | | | | cE dT | tT<br>220 µA<br>3.0<br>PLETE iLLL it LLLtit |) eaeGeReEEE Eeeee<br>22 µA<br>SY oe NRN<br>2.5<br>15 BRR ase ~eNeee<br>max 2.0<br>A Ss POoopeeees<br>10 Pt fftri typ | | | Ff | | | | | | | | noRI<br>1.5<br>SES 4 || | | | | | | | | | ft<br>see a<br>1.0<br>SRR Pt; | | | ft te tt Tf<br>5<br>0.5<br>PT TTT eye yy ddl P|FFrPrPrPrPryry| | | | | | | yee[| tf<br>0 0.0 | | | | | | | | ft ff<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>25 °C<br>Y==S=a==a==2=====| | [| [| [| [ TT TT Tt TT TT Tt TT] (| _—-= 150 °C25 °C, max Ee == ee<br>rt | | | | | ft [ft ft tf ft ft ft ft i 150 °C, max ee eeee<br>Ciss<br>10 [3] PTT TTT Le es l l<br>SS Coss ) 10 [2] L e| er |<br>SSP Se<br>BON) 10 [2] ==SS SSre — fg eeie eee<br>| | | \ I Crss Yr [| [| [ [ [T Tt Ty 7]<br>Yr 10 [1] | |apléal| i<br>10 [1] BRREE SEER ———<br>SS —<br>Y|| | [| [| [| [ TT TT Tt TT TT Tt TT] AG<br>10 [0] 10 [0]<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 9 5 Power-Transistor, BSZ110N08NS5 80 V ## **OptiMOS[ª]** **==> picture [526 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 12<br>ee 10 PF | | J |fff 40 V<br>20 V<br>ee ell nny 4.<br>60 V<br>| WA<br>8<br>PE P T EE A<br>10 [1] 25 °C 6<br>100 °C 4<br>INN NS Fo | YF | | ft<br>iN a SN TA TPT<br>TIT NCI ETE NTL [<br>125 °C<br>2<br>TTIIE TIEN, ET fiti | | ft<br>10 [0] 0 f| | | | | | ft<br>10 [0] 10 [1] TUIKISWI)INEM 10 [2] 10 [3] 0 AR 4 EEE 8 12 TE 16<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>oo Gate charge waveforms<br>90<br>EL ELE Te<br>TTLTT<br>80<br>|<br>70<br>ee eee<br>60 Qys Qou<br>-60 -20 20 60 100 140 180<br>T j PC]<br>V BR(DSS)=f( T j I D pO<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> oo Gate charge waveforms Final Data Sheet 10 **OptiMOS[ª]** 5 Power-Transistor, BSZ110N08NS5 80 V Final Data Sheet 11 5 Power-Transistor, BSZ110N08NS5 80 V ## **OptiMOS[ª]** BSZ110N08NS5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.1|2014-05-05|Release of Final Version| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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