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BSZ0910NDXTMA1
Dual MOSFET, N Channel, 30 V, 25 A, 0.0077 ohm, WISON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Channel Type: N Channel
- Power Dissipation N Channel: 31W
- Power Dissipation P Channel: 31W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 25A
- Continuous Drain Current Id P Channel: 25A
- Drain Source On State Resistance N Channel: 0.0077ohm
- Drain Source On State Resistance P Channel: 0.0077ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.742 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSZ0910ND**
## **MOSFET**
## **Features**
|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|30|V|
|_R_DS(on),max|9.5|mΩ|
|_I_D|25|A|
|_Q_oss|4.6|nC|
|_Q_G(0V..4.5V)|4.0|nC|
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VPhase<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode~~<br>~~|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSZ0910ND<br>~~Type/OrderingCode~~<br>~~|~~|PG-WISON-8<br>~~|~~<br>~~|~~|0910ND|-<br>~~Related Links~~|
Final Data Sheet
1
**PowerStage�3x3 BSZ0910ND**
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.0,��2017-11-23
**PowerStage�3x3 BSZ0910ND**
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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified,�one�transistor�active
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-|-<br>-<br>-<br>-|25<br>11.1<br>9.5<br>5.7|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_A=25°C1)<br>_V_GS=4.5V,_T_A=25°C1)<br>_V_GS=4.5V,_T_A=25°C2)|
|Pulsed drain current3)|_ID,pulse_|-|-|40|A|_T_A=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|20|mJ|_I_D=9A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|31<br>1.9|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=65°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|4|°C/W|-|
|Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|65|°C/W|-|
|Device on PCB,<br>minimal footprint2)|_R_thJA|-|-|180|°C/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) device mounted on a minimum pad (one layer, 70 µm thick)
> 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2017-11-23
**PowerStage�3x3 BSZ0910ND**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|30|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.6|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=30V,_V_GS=0V,_T_j=25°C<br>_V_DS=30V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|7.7<br>10.3|9.5<br>13.0|mΩ|_V_GS=10V,_I_D=9A<br>_V_GS=4.5V,_I_D=9A|
|Gate resistance1)|_R_G|1.8|3.5|7|Ω|-|
|Transconductance|_g_fs|-|33|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=9A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|590|800|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|170|230|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|21|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6.2|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Rise time|_t_r|-|3.2|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Turn-off delay time|_t_d(off)|-|18.5|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Fall time|_t_f|-|2.8|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|1.5|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|0.9|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|1.0|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|1.5|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|4.0|5.6|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.6|-|V|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|8.2|11.4|nC|_V_DD=15V,_I_D=9A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|3.4|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|4.6|-|nC|_V_DD=15V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.0,��2017-11-23
4
**PowerStage�3x3 BSZ0910ND**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|25|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|40|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.86|1.1|V|_V_GS=0V,_I_F=9A,_T_j=25°C|
|Reverse recoverycharge1)|_Q_rr|-|5|-|nC|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2017-11-23
5
**BSZ0910ND**
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Final Data Sheet
6
**BSZ0910ND**
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Final Data Sheet
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**BSZ0910ND**
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Final Data Sheet
8
**BSZ0910ND**
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Gate charge waveforms<br>**----- End of picture text -----**<br>
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Final Data Sheet
9
**BSZ0910ND**
Final Data Sheet
10
**BSZ0910ND**
## BSZ0910ND
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2017-11-23|Release of final version|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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