BSZ084N08NS5ATMA1

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BSZ084N08NS5 

## OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V 

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PG - TSDSON -8 FL<br>37, 56<br>5 a=, *<br>-<br>1 4<br>a, ar)<br>:<br>Drain<br>Pin 5 -8<br>/e 1<br>6)<br>@ ROHS ROHS<br>**----- End of picture text -----**<br>


## Features 

¢ Ideal for high. frequency switchingoe and sync ~~.~~ rec ~~.~~ 

- ¢ Optimized technology for DC/DC converters 

- ¢ Excellent gate charge x Rosion) product (FOM) 

- Very low on ~~-r~~ esistance Rosvon) 

- « N ~~-c~~ hannel, normal level 

- 100% avalanche tested 

- ¢ Pb ~~-f~~ ree plating; ROHS compliant 

- Qualified according to JEDEC" for target applications 

- ¢ Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

- ¢ Higher solder joint reliability with enlarged source interconnection 

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Table 1 Key Performance Parameters /e 1<br>a is pe 6)<br>@ ROHS ROHS<br>BSZ084NO8NS5 PG - TSDSON -8 FL os4nosN fe<br>**----- End of picture text -----**<br>


) ~~J-~~ STD20 and JESD22 Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V 

BSZ084N08NS5 

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## 1 Maximum ratings at Ta=25 °C, unless otherwise specified 

## ~~Table 2_—/ Maximum ratings~~ 

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Parameter Symbol Note / Test Condition<br>Min, (Typ. [Max._|<br>Continuous drain current Ib 7 of A Te=100 °C<br>Avalanche energy, single pulse®) lens =e se [6 ms Ip=20 A, Res=25 Q<br>: 0 IEC climatic category;<br>Operating and storage temperature -55 - 150 Cc DIN IEC 68-1: 55/150/56<br>2 Thermal characteristics<br>Table 3. Thermal characteristics<br>Parameter Symbol Note / Test Condition<br>Thermal Min, (Typ.(Max. |<br>resistance, junction - case Rc se 2 -<br>Device on PCB,<br>6 cm? cooling area’? Pon ff foo<br>**----- End of picture text -----**<br>


‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection ~~.~~ PCB is vertical in still air. Final Data Sheet 3 Rev ~~.~~ 2 ~~.~~ 2, 2021 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V 

BSZ084N08NS5 

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## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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|||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.ae|it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Typ.|[Max|
|Drain-source|breakdown|voltage|[Veanss|(80.|(>(«IV|[Vose0V,|bat|mA|
|Gate|threshold|voltage|Vos=Ves,|[p=31|YA|
|Zero|gate|voltage|drain|current|ss|||A|||00|Ve=80|y|yaa,|v|1495|So|
|Gate-source|leakage|current|ess|=|e100|[nA|Ves=20|V,|Vos=0|V|
|Drain-source|on-state|resistance|Rosny|oo|oo|VeeeV|ieee|A|
|Transconductance|lo|_-(j2o—ifsasd-/ Ss||Vos|>2|/o|Ros(on)ymax,|/p>=20|A|
|Table|5|Dynamic|characteristics|
|P|aramet|er|Syy|mbo|l|jaeMin.Typ.|[Maxit|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance’|Css|=—-—«|4400.|[1820|Ves=0|V,|Vos=40|V,|fe1|MHz|
|Output|capacitance”)|ICs||=|240|[312|[pr|Ves=0|V,|Vos=40|V,|H1|MHz|
|Reverse|transfer|capacitance”|Css|[e228|pr|Ves=0|V,|Vos=40|V,|H1|MHz|
|sext™|T.|
|ext|I.|
|Table|6|Gate|charge|characteristics”)|
|arameter|ymbo|Min.|ote /|Test|Condition|
|Gate|Typ. [Max|
|to|source|charge|las||e|5|[=||n|||Vo0=40|V,|fo=20|A,|Ves=0|to|10|V|
|Gate|to|drain|charge”|las||e|44|[7|nC|||Vo0=40|V,|Io=20|A,|Ves=0|to|10|V|
|Switching|charge|Qu|fe|zt||=|[nC]|Von=40|V,|1o=20|A,|Ves=0|to|10|V|
|Gate|charge|total”|la|esf20|[25|nc|Voo=40|V,|Ip=20|A,|Ves=0|to|10|V|
|Gate|plateau|voltage|Vote|—f-sd|Vop=40|V,|Ip=20|A,|Ves=0|to|10|V|
|Gate|charge|total,|sync.|FET|Quem|fe|AT|fn|Vps=0.1|V,|Ves=0|to|10|V|

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## Table 5 Dynamic characteristics 

## Table 6 Gate charge characteristics”) 

> ’) Defined by design. Not subject to production test. ?) See “Gate charge waveforms” for parameter definition. Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V 

BSZ084N08NS5 

## 4 Electrical characteristics diagrams 

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Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V BSZ084NO08NS5 

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Final Data Sheet 

7 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V 

BSZ084N08NS5 

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Final Data Sheet 

8 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V BSZ084NO8NS5 

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Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23 

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imMos™ OptiMOS 5 Power- ~~T~~ ransistor, 80 V BSZ084N08NS5 

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## Revision History 

## BSZO084NO8NS5 

## Revision: 2021 ~~-0~~ 6 ~~-2~~ 3, Rev ~~.~~ 2.2 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects (major changes since last revision)|||||||||||||||
|2.0||||2014~~-~~12~~-~~17||||Release|||of final version||||||||||||
|2.1||||2020~~-1~~1~~-~~09||||Update package drawing,|||||||||footnotes and||||Diagram 13||
|2.2||||2021~~-0~~6~~-~~23||||UpdateIdmax||||||current||rating|||||||



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Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie’) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances ~~.~~ For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered ~~.~~ 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 2, 2021 ~~-0~~ 6 ~~-~~ 23