BSZ070N08LS5ATMA1

Power MOSFET, N Channel, 80 V, 74 A, 7000 µohm, TSDSON-FL, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS 5
Qualification: -
Power Dissipation: 69W
Transistor Mounting: Surface Mount
Transistor Polarity: N Channel
Power Dissipation Pd: 69W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.0059ohm
Transistor Case Style: TSDSON-FL
Drain Source Voltage Vds: 80V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 74A
Drain Source On State Resistance: 7000µohm
Automotive Qualification Standard: -
Gate Source Threshold Voltage Max: 2.3V

Delivery and price
Units per pack	3000
Price	0.697 €
Current stock	1000+
Lead time	7 days

Datasheet

**BSZ070N08LS5** 

## **MOSFET** 

## **OptiMOS[ª]** 

## **Features** 

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**----- Start of picture text -----**<br>
* Optimized technology for DC/DC converters<br>« Excellent gate charge x R DS(on) product<br>¢ Very low on-resistance R DS(on)<br>**----- End of picture text -----**<br>


|**Parameter**<br>1<br>Key ~~Performance~~|**Value**<br>~~Performance~~ ~~Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|80|V|
|_R_DS(on),max|7.0|mΩ|
|_I_D|40|A|
|_Q_oss|29|nC|
|_Q_G(0V..4.5V)|14|nC|



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**----- Start of picture text -----**<br>
(enlarged source interconnection)<br>=> tg, Zaz,<br>. “Ze<br>2™<br>D 4<br>S 1 8 D<br>S 2 7 D<br>T i l<br>S 3 | ( =) i 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSZ070N08LS5<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TSDSON-8 FL<br>~~**|**~~|070N08L|-|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[ª] 5�Power-Transistor,�80�V BSZ070N08LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.2,��2016-08-18 

**OptiMOS[ª] 5�Power-Transistor,�80�V BSZ070N08LS5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|40<br>40<br>13|A|_T_C=25°C<br>_T_C=100°C<br>_T_A=25°C,_R_thJA=60K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|160|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|104|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|69|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|1.1|1.8|K/W|-|
|Device on PCB,<br>minimal footprint|_R_thJA|-|-|62|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.2,��2016-08-18 

**OptiMOS[ª] 5�Power-Transistor,�80�V BSZ070N08LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=36µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|7.4<br>5.9|9.4<br>7.0|mΩ|_V_GS=4.5V,_I_D=10A<br>_V_GS=10V,_I_D=20A|
|Gate resistance1)|_R_G|-|1.3|2|Ω|-|
|Transconductance|_g_fs|26|52|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1800|2340|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|280|364|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Reverse transfer capacitance1)|_C_rss|-|12|21|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6.1|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|4.8|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|24.6|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|5.8|-|ns|_V_DD=40V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=3Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|5|-|nC|_V_DD=40V,_I_D=20A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|5|7|nC|_V_DD=40V,_I_D=20A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|6.9|-|nC|_V_DD=40V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|14.1|18|nC|_V_DD=40V,_I_D=20A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.9|-|V|_V_DD=40V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|25|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|29|39|nC|_V_DD=40V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.2,��2016-08-18 

4 

**OptiMOS[ª] 5�Power-Transistor,�80�V BSZ070N08LS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|40|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.85|1.2|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|32|64|ns|_V_R=40V,_I_F=20A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|27|54|nC|_V_R=40V,_I_F=20A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test Final Data Sheet 

Rev.�2.2,��2016-08-18 

5 

**OptiMOS[ª] BSZ070N08LS5** 

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**----- Start of picture text -----**<br>
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Final Data Sheet 

6 

**OptiMOS[ª] BSZ070N08LS5** 

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Final Data Sheet 

7 

**OptiMOS[ª] BSZ070N08LS5** 

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**----- Start of picture text -----**<br>
15 PT tT TE EE EE ET 2.5 ey] ty ty ty tp bd<br>12 PtPt tT|  ttttt | tett ttrE tT| TtPd 2.0 Tht_  ttle<br>CEEEEEr rr) RSET<br>360 µA<br>9 TO 1.5 ONK<br>36 µA<br>max<br>Coo err le CO PRS<br>typ<br>63 BpPeperPt 240 2a | 1.00.5 Cope™\ee<br>Pt | tt tT tt te tT Tt<br>Pt tT ttt te tT te tT Tt ] ty ty ty} tp by<br>0 Pt tT ttt tt ttTtT ttTy 0.0 THT PtP<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j °C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>= Se<br>25 °C<br>150 °C<br>r | {| | [| [| [| [| [ [| [T [ | J T T | (| 25 °C, max ee<br>eePt tT tT te I = 150 °C, max -=a=—=—— eeee<br>Ciss<br>10 [3] MEET ) 10 [2] L e<br>Coss<br>SS ee |<br>yp | | | TN i es ee es 8 es GY 2S<br>ce feoopoNecerrere<br>& eee fe S e<br>Ki tT ft | NPP tT tT Tt x e<br>|<br>AHP ee ee<br>PINE ELLE |Ear<br>10 [2] 10 [1] TE<br>a Crss a |<br>PTPt tTTT;| PNALTET EEET EEET ET ET P|eeft; ft ff | | f| tfee<br>TELA}<br>10 [1] 10 [0]<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[ª] BSZ070N08LS5** 

**==> picture [526 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] 10<br>a ee ee Vy,<br>-—}— A HHH ee) a<br>LT TTT UT CECT TTT TTT TTT wy<br>aPT TT TTT 8 ee VAae<br>40 V<br>te  | 6<br>« 10 [1] UT NUIINGTIII /<br>25 °C<br>LUNPEE ONUINGMEH 100 °C NECHHtH fs ETF 16 V Vy 64 V<br>a 125 °C ee 4 Ae<br>NCEA VA<br>PTT PNEATING TTT Ae<br>Pot TT PENT NETS WA ,<br>ET TEIN NU f e<br>2<br>HIE ELUNE ASU Ane ne<br>UIINENII) Zo<br>10 [0] 0<br>TI NI<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25 30<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


Po Gate charge waveforms 

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**----- Start of picture text -----**<br>
90<br>TEE<br>85<br>LE<br>a<br>| er<br>e= 80 titera<br>et<br>PTE<br>75<br>70<br>FLEET TET<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[ª] BSZ070N08LS5** 

Final Data Sheet 

10 

**OptiMOS[ª] BSZ070N08LS5** 

## BSZ070N08LS5 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2016-03-23|Release of final version|
|2.1|2016-04-21|Update "Gate threshold voltage"|
|2.2|2016-08-18|Update Qsw|



## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11

Updated at March 15, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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