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BSZ063N04LS6ATMA1
Power MOSFET, N Channel, 40 V, 40 A, 6300 µohm, TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6
- Qualification: -
- Power Dissipation: 38W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 6300µohm
- Gate Source Threshold Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.401 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSZ063N04LS6**
## **MOSFET**
## **OptiMOS**
## **Features**
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**----- Start of picture text -----**<br>
¢ Optimized for synchronous application<br>¢ Very low on-resistance R DS(on)<br>* 100% avalanche tested<br>¢ Superior thermal resistance<br>¢ N-channel<br>1)<br>**----- End of picture text -----**<br>
|**Parameter**<br> ~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|6.3|mΩ|
|_I_D|40|A|
|_Q_oss|10.2|nC|
|_Q_G(0V..10V)|9.5|nC|
|_Q_G(0V..4.5V)|4.6|nC|
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(enlarged source interconnection)<br>es py Zoey,<br>. “Ze<br>2™<br>1 4<br>S 1 L a 8 D<br>S 2 | | 7 D<br>S 3 H IKED a 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSZ063N04LS6<br>~~Type/OrderingCode |~~|PG-TSDSON-8 FL<br>~~|~~|63N04L6<br>|-<br>|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ063N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.0,��2018-06-04
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ063N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|40<br>40<br>40<br>34<br>15|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=60°C/W1)|
|Pulsed drain current2)|_ID,pulse_|-|-|160|A|_T_C=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|25|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|38<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=60°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|4|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|60|°C/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2018-06-04
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ063N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|5.1<br>7.0|6.3<br>8.8|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=20A|
|Gate resistance|_R_G|-|2.3|-|Ω|-|
|Transconductance|_g_fs|-|64|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=20A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|650|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|210|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|12|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|3|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|1|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|10|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|2|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|1.9|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|1.0|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|1.3|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|2.2|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|9.5|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.9|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|4.6|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|3.9|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|10.2|-|nC|_V_DD=20V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.0,��2018-06-04
4
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ063N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|38|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.85|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|13|-|ns|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge1)|_Q_rr|-|21|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2018-06-04
5
**OptiMOS BSZ063N04LS6**
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**----- Start of picture text -----**<br>
40 70<br>package limit<br>silicon limit<br>ee ee ee ee =<br>35 N e ee eee 60 ee eee<br>30<br>50<br>pf Xe a<br>25 NT<br>—f {Nj | | ft — ff<br>40<br>e= 20 (++A |, SS S<br>—f [ {\} | ft tt ee<br>30<br>15 Pt Rs<br>| [ | N | | a<br>20<br>10<br>5 PF Pp YN EY 10 eeRs<br>0 PF of fF tN 0 a a<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>P tot=f( T C) I D=f( T C V GS ≥<br>fa te<br>P tot I D<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>single pulse<br>0.01<br>Se 1 |<br>a \ 0.02 a<br>0.05<br>1 µs<br>10 [2] 0.1<br>E a 10 ms u 10 µs e ll 0.2 1a<br>S t 1 ms l 0.5 1aoc<br>DC 100 µs<br>r t T | I<br>NSE EEE o e<br>10 [1] S o res il<br>NEEEEEE = 2<br>SEEN [AEN] se le 10 [0] A ||| ||| |)<br>10 [0] EE NlVN . —Pt Tea ee A<br>REE EEE HE SLE 1 Uf<br>HOTT PAI TT MET<br>10 [-1]<br>a NN AWM AVE EMELINE<br>ET<br>10 [-2] eaees iammaiiiimmmaiiiiiaee ll ee 10 [-1] NA)<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
## **OptiMOS** ™ 6 Power-Transistor, 40 V **BSZ063N04LS6**
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**----- Start of picture text -----**<br>
160 16<br>4.5 V 3 V<br>3.5 V<br>10 V 5 V<br>140 PEA,HT A EE 14 typePTE eT ETT petEy EEaanYY<br>4 V<br>ELLA IATL Lr PL TTT Tye Ty yA<br>120 LEELA be 12 PE eeeEe<br>TAAL EE PTT tT |ee<br>100 PLEAETA LEE 10 |pettt 4 V<br>z< 80 WAACALL pe 8 TH) TELE EE<br>4.5 V<br>3.5 V<br>5 V<br>60 TLVff AA || Tr | 6 SeOTOL<br>10 V<br>40 LMAHALeT EEE 4 EEEPET ETT ETGGeeEeneelEe<br>TALL PE eeEEE<br>20 1 /AUAAAERS 3 V 2 EE<br>2.8 V<br>pee ee CO<br>0 Boro EE 0 PET ETE ETT Ey ETT<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>160 16<br>175 °C<br>25 °C<br>140 HE EEE | 14 PEELEPELL TTT TENETTAT EEE EET [TTT]<br>PEE EEE SITET TTT<br>120 PEE EEE 12 PEELE TTTEEE<br>PEEPEELE EEA PLETENEE EE<br>100 10 175 °C<br>PEE TEAEEA SERRAPEELE AEEVELARDEFP<br>z 80 JIT)PELLET de = 8 EENEE<br>PEE EET TTT TE PEEETEEETENG LTTETTT TTT<br>60 6<br>25 °C<br>40 SeePEE T EEEA 4 P LETEEELETEE EAEET<br>PEE Ge PLETE EEEEEE<br>20 2<br>ETT TTTEEE AAAT P EELETE E LE E<br>LTE AEE PEELTEE<br>0 PLETE MA EE EE 0 PLETE TL ELE EEE EEL EEE<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS [V] V GS [V]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS BSZ063N04LS6**
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**----- Start of picture text -----**<br>
2.0 PTT TITTLE LLL EEL 2.4 LL ET TT TTT TTT TTT TT EET<br>PTTL LE EET TEE TTT TET TET EET EET<br>SSS 00000 0000000000007 4008 SCEPRSELECT<br>2.0<br>1.6<br>COCOHf LL“CS TPP RSEEPR BREE [ELEC] PTE TT<br>— /) Ss MS<br>1.6<br>° PETE EEE EAE PITT TTT TTT TT TPA AEE TT<br>nq 1.2 PCE A LEE TET TTT TTT ENC ETLAN EEE<br>2 i PEE TET TTT TT TTT ET ET NAEELAN EET<br>ha PEELE AEE}A GeceIN N<br>oO A > ee N 2500 µA STN<br>1.2<br>3 Pz q<br>5E 0.8 COEEERTTLELELLELELELLELELLLpea PIET TT TT TT TT TT TT TT TT 250 µA<br>2 CO<br>= eee 0.8 SO<br>§ FEET TT TTT TTT TT ET EET E E T EE<br>no PETE EEE EEE PEP<br>0.4<br>TTT 0.4 PE EET TET TET ET EEE EE EE<br>PELE PE ET TTT TTT TTT TET EET EET EET<br>PETE EEE EE EEE FERRE EERE EEE<br>0.0 PETE TTT TEE E TEET E TTEE EEE E EEEELE] 0.0 PCCPCOCEEEELEEEEEEELEEEEEE<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>10 [3] 10 [3]<br>a PSE<br>25 °C<br>RS ; [}-—-~~~~~~} ~~~<br>oe Ciss i 25 °C, max COPEEE<br>175 °C<br>NST ooo : PECEE CELE EEE ELE<br>POPSPTT PE ; 175 °C, max C CEEEE<br>TIT NELEELT TT TTT TT r<br>TTT NCEP 10 [2] TELE Yer<br>[| EEEEEEEEEE EEE EEE<br>cA— 10 [2] Coss ee— eeetasiastfastiar/| ae Ae<br>Ne j<br>2. er dtccaantion<br>ASAS PELLETA Ae<br>| | INE | Pt tt tt / 7<br>PEINSE BNS SS See eeeeee 10 [1] BERR REE EEEESEEREEE EERE ES<br>TT PINE\ E ETE EEEYY PETE—---------—}--34f-}------_-_-_-SSSTEE TTT aA PEPE EET<br>Crss<br>10 [1] 10 [0]<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS IV] V SD IV]<br>C =f( V DS V GS f I F=f( V SD T j<br>GS(th)<br>V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
## **OptiMOS BSZ063N04LS6**
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**----- Start of picture text -----**<br>
10 [2] 10<br>——— = — ee ee PSS T EEE ELL<br>ree a | [Titty fT hETTT ii 8 V20 V32 V PETPET TETTT TETTTTTET TTTEE Eyfet ft<br>a Poo pe fp | AR<br>el l 8 ECE AC<br>NN NX NI! LTT TTT PETE tt tt ttt ya ttt tT<br>10 [1]<br>sl FECES eee<br>FSa NNNEE ENS eeSEF 6 rPEPe eee eAL) OO<br>T_T LET ETT ET TTT iAA Te<br>= a ee ee 25 °C LT a rTEECeEEE<br>< Lee AA TTL<br>STNTENT es a CeL,<br>4<br>10 [0] 100 °C<br>CMTS | EEE ACS<br>a<br>a<br>ee NN 2 En S ee<br>150 °C<br>EAHA | E AE<br>ETNAAT LIAcesestontontentententsAGELTTE EERE TTEEE eteEEEey ey eT<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 2 4 6 8 10<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =20A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>
**==> picture [259 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
44 LTT TT TTT ET TT TTT ety yt Ty yet yy yy<br>rT TTT TTT eet tye yee yy et ee<br>TTT TT TTT ET TTT ty eet yy Te ee ty [7<br>LTT TTT Tt te tT eet et et ee eee ee<br>BERET<br>43<br>TTT TT TTT eT TT yt yee TT Teeee<br>BERR EERE ae<br>TTT TT TTT ETT TT yet ey Ti Tye te TT<br>42 SeeTTT Ae<br>rT T TT T ITTT TEe T TTTet yyytT e tyrr Tyeyi TETet ee [7<br>TTT TT TIT TET TTT tytetyYVE tT Tet Ty [7<br>rT TTT TTT eT Tt yt [yet]<br>S EERE eee<br>= 41 TTTPTET TTTETTIT TTTTeer TtTT TATyt AT TT<br>TTTrT TTT TTTITTLE TTT TTT TAT TTTT TET ET TT<br>TTT TT TIT TTA TT TT ET ET TT<br>See ae<br>40 TTT TT TIT Ty ret eet ty TT ET ET TT<br>SRRAe<br>rr TTT TTT yet TT Ty TE<br>TTT TT TITY TTT Tt yee yy yt Te TT TT<br>EEREARE<br>39 TTT TIWE TET TT Tt Tet yy et eee ey [7<br>rTTAFCCC VEE EEEEEE<br>rT IAT T IT T Ee T T TTTTt yt T y e et etyyy Te e ee te [7<br>38 TTTTT TET Titty ttt ttt tt titty tty<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS BSZ063N04LS6**
Final Data Sheet
10
**OptiMOS BSZ063N04LS6**
## BSZ063N04LS6
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-06-04|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →