Image not available
Illustrative purposes only
BSZ050N03LSGATMA1
Power MOSFET, N Channel, 30 V, 40 A, 5000 µohm, PG-TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 50W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TSDSON
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 5000µohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.212 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSZ050N03LS G** ## !"#$%!& **™3 Power-MOSFET** ## **Features** - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC[1)] for target applications ## **Product Summary** **==> picture [177 x 49] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |V|DS|30|V| |R|DS(on),max|5|mW| |I|D|40|A| **----- End of picture text -----**<br> PG-TSDSON-8 - N-channel; Logic level - Excellent gate charge x _R_ DS(on) product (FOM) - Very low on-resistance _R_ DS(on) - Superior thermal resistance - Avalanche rated - Pb-free plating; RoHS compliant - Halogen-free according to IEC61249-2-21 **==> picture [427 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Type|Package|Marking| |BSZ050N03LS G|PG-TSDSON-8|050N03L| |Maximum ratings,|at|T|j=25 °C, unless otherwise specified| |Parameter|Symbol|Conditions|Value|Unit| |Continuous drain current|I|D|V|GS=10 V,|T|C=25 °C|40|A| |PPrr| |V|GS=10 V,|T|C=100 °C|40| |a| |V|GS=4.5 V,|T|C=25 °C|40| |V|GS=4.5 V,|40| |T|C=100 °C| |pT| |V|GS=10 V,|T|A=25 °C,| |16| |R|thJA=60 K/W|[2)]| |Pulsed drain current|[3)]|I|D,pulse|T|C=25 °C|160| |rr| |Avalanche current, single pulse|[4)]|I|AS|T|C=25 °C|20| |rr| |Avalanche energy, single pulse|E|AS|I|D=20 A,|R|GS=25 W|70|mJ| |I|D=40 A,|V|DS=24 V,| |Reverse diode d|v|/d|t|d|v|/d|t|d|i|/d|t|=200 A/µs,|6|kV/µs| |T|j,max=150 °C| |Tf| |Gate source voltage|V|GS|±20|V| |a| **----- End of picture text -----**<br> 1) J-STD20 and JESD22 Rev. 1.3 page 1 2009-11-05 **BSZ050N03LS G** **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified **Parameter Symbol Conditions Value Unit** Power dissipation _P_ tot _T_ C=25 °C 50 W _T_ A=25 °C, 2.1 _R_ thJA=60 K/W[2)] Operating and storage temperature _T_ j, _T_ stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 **Parameter Symbol Conditions Values Unit min. typ. max.** ~~ee eee~~ **Thermal characteristics** Thermal resistance, junction - case _R_ thJC - - 2.5 K/W Device on PCB _R_ thJA 6 cm[2] cooling area[2)] - - 60 ~~eeee oe ee~~ **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified **Static characteristics** **==> picture [419 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Drain-source breakdown voltage|V|(BR)DSS|V|GS=0 V,|I|D=1 mA|30|-|-|V| |Gate threshold voltage|V|GS(th)|V|DS=|V|GS,|I|D=250 µA|1|-|2.2| |Zero gate voltage drain current|I|DSS|V|DS=30 V,|V|GS=0 V,|-|0.1|1|µA| |T|j=25 °C| |V|DS=30 V,|V|GS=0 V,|-|10|100| |T|j=125 °C| |Gate-source leakage current|I|GSS|V|GS=20 V,|V|DS=0 V|-|10|100|nA| |Drain-source on-state resistance|R|DS(on)|V|GS=4.5 V,|I|D=20 A|-|6.2|7.8|mW| |V|GS=10 V,|I|D=20 A|-|4.2|5| |Gate resistance|R|G|0.7|1.4|2.5|W| |Transconductance|g|fs|||V|DS|>2||I|D||R|DS(on)max,|38|76|-|S| |I|D=30 A| **----- End of picture text -----**<br> - 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. - 3) See figure 3 for more detailed information Rev. 1.3 page 2 2009-11-05 |**BSZ050N03LS G**<br>~~Cnfinen~~|**BSZ050N03LS G**<br>~~Cnfinen~~|**BSZ050N03LS G**<br>~~Cnfinen~~|**BSZ050N03LS G**<br>~~Cnfinen~~|**BSZ050N03LS G**<br>~~Cnfinen~~|**BSZ050N03LS G**<br>~~Cnfinen~~|**BSZ050N03LS G**<br>~~Cnfinen~~| |---|---|---|---|---|---|---| |~~Cnfinenee~~<br>~~ee ee~~||||||| |**Parameter**<br>~~ee~~|**Symbol **<br>~~ee~~|**Conditions**<br>~~ee~~<br>~~ee ee~~|**Values**<br>~~ee~~<br>~~ee~~|||**Unit**<br>~~ee~~<br>~~ee~~| ||||**min.**<br>~~ee~~<br>~~ee~~|**typ.**<br>~~ee~~<br>~~ee~~|**max.**<br>~~ee~~<br>~~ee~~|| |**Dynamic characteristics**<br>~~ee~~<br>~~ee ee~~||||||| |Input capacitance|_C_iss|_V_GS=0 V,_V_DS=15 V,<br>_f_=1 MHz|-|2100|2800|pF| |Output capacitance|_C_oss||-|790|1100|| |Reverse transfer capacitance|Crss||-|41|-|| |Turn-on delay time|_t_d(on)|_V_DD=15 V,_V_GS=10 V,<br>_I_D=30 A,_R_G=1.6W|-|5.2|-|ns| |Rise time|_t_r||-|4.0|-|| |Turn-off delay time|_t_d(off)||-|21|-|| |Fall time|_t_f||-|3.6|-|| |Gate Charge Characteristics5)||||||| |Gate to source charge|_Q_gs<br>~~iat~~|_V_DD=15 V,_I_D=30 A,<br>_V_GS=0 to 4.5 V<br>~~iat~~<br>~~ff~~|-<br>~~iat~~|6.3<br>~~iat~~|8.4<br>~~iat~~|nC| |Gate charge at threshold|_Q_g(th)<br>~~iat~~||-<br>~~iat~~|3.2<br>~~iat~~|4.3<br>~~iat~~|| |Gate to drain charge|_Q_gd<br>~~iat~~<br>~~=~~||-<br>~~iat~~<br>~~Tt~~|2.9<br>~~iat~~<br>~~Tt~~|4.8<br>~~iat~~<br>~~Tt~~|| |Switching charge|_Q_sw<br>~~iat~~<br>~~=~~||-<br>~~iat~~<br>~~Tt~~|6.0<br>~~iat~~<br>~~Tt~~|8.9<br>~~iat~~<br>~~Tt~~|| |Gate charge total|_Q_g<br>~~iat~~<br>~~—~~||-<br>~~iat~~<br>~~ft~~|13<br>~~iat~~<br>~~ft~~|17<br>~~iat~~<br>~~ft~~|| |Gate plateau voltage|_V_plateau<br>~~iat~~<br>~~—~~<br>~~ff~~||-<br>~~iat~~<br>~~ft~~<br>~~fftf~~|3.1<br>~~iat~~<br>~~ft~~<br>~~tf~~|-<br>~~iat~~<br>~~ft~~<br>~~tf~~|V| |Gate charge total<br>~~DP~~|_Q_g<br>~~ff~~<br>~~DP~~|_V_DD=15 V,_I_D=30 A,<br>_V_GS=0 to 10 V<br>~~ff~~<br>~~tt~~|-<br>~~fftf~~<br>~~tt~~|26<br>~~tf~~<br>~~tt~~|35<br>~~tf~~|| |Gate charge total, sync. FET<br>~~DP~~|_Q_g(sync)<br>~~ff~~<br>~~ef~~<br>~~DP~~|_V_DS=0.1 V,<br>_V_GS=0 to 4.5 V<br>~~ff~~<br>~~ef~~<br>~~tt~~|-<br>~~ff tf~~<br>~~ef~~<br>~~tt~~|11<br>~~tf~~<br>~~ef~~<br>~~tt~~|14<br>~~tf~~<br>~~ef~~|nC| |Output charge<br>~~DP~~|_Q_oss<br>~~DP~~|_V_DD=15 V,_V_GS=0 V<br>~~tt~~|-<br>~~tt~~<br>~~ee~~|20<br>~~tt~~<br>~~ee~~|27<br>~~ee~~|| |**Reverse Diode**<br>~~tt~~<br>~~DP~~||||||| |Diode continuous forward current|_I_S|_T_C=25 °C|-|-|40|A| |Diode pulse current|_I_S,pulse||-|-|160|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=20 A,<br>_T_j=25 °C|-|0.82|1.1|V| |Reverse recovery charge|_Q_rr|_V_R=15 V,_I_F=_I_S,<br>d_i_F/d_t_=400 A/µs|-|-|15|nC| |5)See figure 16 for gate charge parameter definition<br>4)See figure 13 for more detailed information||||||| - 4) See figure 13 for more detailed information - 5) See figure 16 for gate charge parameter definition Rev. 1.3 page 3 2009-11-05 **BSZ050N03LS G** **1 Power dissipation** _P_ tot=f(=f( _T_ C)) ## **2 Drain current** **==> picture [422 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> tot=f(=f( T C)) I D=f( T C); V GS ! 10 V<br>60 50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>0 AL 0<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V DS);); T C=25 °C;=25 °C; D =0 Z thJC=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [3] 10<br>limited by on-state<br>resistance<br>1 µs<br>10 [2] 10 µs<br>0.5<br>1<br>100 µs<br>DC 0.2<br>10 [1] 0.1<br>1 ms 0.05<br>10 ms 0.1 0.02<br>0.01<br>10 [0]<br>single pulse<br>10 [-1] 0.01 0 0 0 0 0 0 1<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br> [W] [A]<br>P tot I D<br> [A] [K/W]<br>I D<br> thJC<br>Z<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS);); _T_ C=25 °C;=25 °C; _D_ =0 parameter: _t_ p Rev. 1.3 page 4 2009-11-05 **BSZ050N03LS G** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on resistance** **==> picture [428 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> I D=f( V DS); T j=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>160 10<br>10 V 5 V 4.5 V 3.5 V<br>8<br>120<br>4 V 4 V<br>6 4.5 V<br>5 V<br>80<br>10 V<br>4<br>11.5 V<br>3.5 V<br>40<br>3.2 V 2<br>3 V<br>2.8 V<br>0 BE 0<br>0 1 2 3 0 10 20 30 40 50<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I D=f( V GS); | V DS|>2| I D| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>160 180<br>120 135<br>80 90<br>40 45<br>150 °C<br>25 °C<br>0 0<br>0 1 2 3 4 5 0 40 80 120 160<br>V GS [V] I D [A]<br>]<br>W<br>[m<br> [A]<br>I D<br> DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> Rev. 1.3 2009-11-05 page 5 **BSZ050N03LS G** **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=20 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA **==> picture [205 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>6<br>98 %<br>typ<br>4<br>2<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>] W<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [205 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz ## **12 Forward characteristics of reverse diode** _I_ F=f( _V_ SD) parameter: _T_ j **==> picture [421 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10000 1000<br>Ciss<br>25 °C<br>10 [3] 1000 Coss 100 150 ° C, 98%<br>sus<br>150 °C<br>10 [2] 100 10 25 °C, 98%<br>Crss<br>10 [1] 10 1<br>0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>[pF] [A]<br>C I F<br>**----- End of picture text -----**<br> Rev. 1.3 page 6 2009-11-05 **BSZ050N03LS G** ## **13 Avalanche characteristics** ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=30 A pulsed parameter: _V_ DD _I_ AS=f( _t_ AV); _R_ GS=25 W parameter: _T_ j(start) **==> picture [420 x 559] intentionally omitted <==** **----- Start of picture text -----**<br> 100 12<br>15 V<br>6 V<br>10 24 V<br>8<br>25 °C<br>10 100 °C 6<br>125 ° C<br>4<br>2<br>1 0<br>1 10 100 1000 0 10 20 30<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br> BR(DSS)=f(=f( T j);); I D=1 mA=1 mA<br>34<br>V GS<br>32 Q g<br>30<br>28<br>26<br>V gs(th)<br>24<br>22 Q g(th) Q sw Q gate<br>20 Q gs Q g d<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [A] [V]<br>I AV V GS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br> **15 Drain-source breakdown voltage** _V_ BR(DSS)=f(=f( _T_ j);); _I_ D=1 mA=1 mA Rev. 1.3 2009-11-05 page 7 **BSZ050N03LS G** **Package Outline PG-TSDSON-8** Rev. 1.3 page 8 2009-11-05 **BSZ050N03LS G** $ % ## Legal Disclaimer For +,-.<=>C%., further information on technology, delivery terms and conditions and prices, please contact the nearest $ Infineon Technologies Office (www. infineon.com). contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the H><,%,1& types in question, please contact the nearest Infineon Technologies Office. The Infineon Rev. 1.3 page 9 2009-11-05
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →