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BSZ031NE2LS5ATMA1
Power MOSFET, N Channel, 25 V, 40 A, 3100 µohm, TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 30W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 25V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 3100µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.31 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
## MOSFET
**OptiMOS[TM]** OptiMOS[TM] 5 BSZ031NE2LS5
Final
## 5 Power-MOSFET, BSZ031NE2LS5 25 V
## **OptiMOS[TM]**
## **Features**
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**----- Start of picture text -----**<br>
QOSS<br>SW<br>«Low FOM_ for High Frequency SMPS<br>¢ Excellent gate charge x R DS(on) product<br>* Very low on-resistance R DS(on) @ V GS<br>* 100% avalanche tested<br>¢ N-channel<br>1)<br>**----- End of picture text -----**<br>
|**Parameter**<br>1<br>Key Performance|**Value**<br>PerformanceParameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|25|V|
|_R_DS(on),max|3.1|mΩ|
|_I_D|40|A|
|_Q_OSS|9.1|nC|
|_Q_G(0V..4.5V)|6.3|nC|
**==> picture [137 x 219] intentionally omitted <==**
**----- Start of picture text -----**<br>
TSDSON-8 FL<br>(enlarged source interconnection)<br>oa py Zoey,<br>. “Ze<br>2™<br>1 4<br>S 1 8 D<br>S 2 T i l 7 D<br>S 3 | ( =) r f 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>
||**Package**|**Marking**||
|---|---|---|---|
|BSZ031NE2LS5|PG-TSDSON-8 FL|31NE2L5|-|
1) J-STD20 and JESD22
Final Data Sheet
2
**OptiMOS[TM] 5�Power-MOSFET,�25�V**
BSZ031NE2LS5
**==> picture [146 x 65] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.�2.0,��2015-08-06
**OptiMOS[TM] 5�Power-MOSFET,�25�V**
BSZ031NE2LS5
**==> picture [146 x 65] intentionally omitted <==**
## **2�����Maximum�ratings**
at� _T_ j�=�25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|40<br>40<br>40<br>40<br>19|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=4.5V,_T_A=25°C,_R_thJA=60K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|160|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|20|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|20|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-16|-|16|V|-|
|Power dissipation|_P_tot|-<br>-|30<br>2.1|-<br>-|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **3�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|4.1|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
Rev.�2.0,��2015-08-06
4
**OptiMOS[TM] 5�Power-MOSFET,�25�V**
BSZ031NE2LS5
**==> picture [146 x 65] intentionally omitted <==**
## **4�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=20V,_V_GS=0V,_T_j=25°C<br>_V_DS=20V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|3.2<br>2.6|3.9<br>3.1|mΩ|_V_GS=4.5V,_I_D=20A<br>_V_GS=10V,_I_D=20A|
|Gate resistance|_R_G|-|0.75|1.2|Ω|-|
|Transconductance|_g_fs|46|93|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|910|1230|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|390|530|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|38|-|pF|_V_GS=0V,_V_DS=12V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|3|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|3|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|2|-|ns|_V_DD=12V,_V_GS=10V,_I_D=30A,<br>_R_G,ext=1.6Ω|
1) Defined by design. Not subject to producction test Final Data Sheet
Rev.�2.0,��2015-08-06
5
BSZ031NE2LS5
**==> picture [146 x 65] intentionally omitted <==**
## **OptiMOS[TM] 5�Power-MOSFET,�25�V**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.3|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|1.5|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|1.4|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|2.3|-|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|6.3|8.5|nC|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.5|-|V|_V_DD=12V,_I_D=30A,_V_GS=0to4.5V|
|Gate charge total2)|_Q_g|-|13.6|18.3|nC|_V_DD=12V,_I_D=30A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|5.9|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge2)|_Q_oss|-|9.1|12.3|nC|_V_DD=12V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|30|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.82|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|12|-|nC|_V_R=15V,_I_F=30A,d_i_F/d_t_=400A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to producction test
Final Data Sheet
6
Rev.�2.0,��2015-08-06
5 Power-MOSFET, BSZ031NE2LS5 25 V
**OptiMOS[TM]**
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40 45<br>40<br>10 V<br>4.5 V<br>35<br>30<br>30<br>A NE 25 Et tt<br>20<br>20<br>pf} iN\ ye 15 ttt tte aq<br>10<br>10<br>ptt | Ett eye<br>Ft IN Ee<br>Lee\ 5<br>0 E EN 0 EEEE<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>para P tot=f( T C) m I D=f( T C eter V GS<br>P tot I D<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>Et Et EE eee CE<br>Yr | [| [tit JT TTT ttt [ [ TTT a<br>a 1 µs | ane<br>0.5<br>10 [2] 10 µs<br>b+ — iN ENS EEE BSS EEE Y<br>i ment lll TACT<br>10 [0] 0.2<br>= OTR 1 ms 100 µs NCH |e St 0.1 COU et”-AA AetiiesttiiestiTTT TTTTTTmeet<br>10 [1]<br>0.05<br>< aeNellae 10 ms eee ee cesses S 2WZ aneT a<br>ee DC Se 0.02 Ay<br>P| | TT TTT IAN TNE NE p y (<br>10 [-1] 0.01<br>EPAPER ONE Ed pete LEME LUE<br>10 [0] single pulse<br>CTETa eeCT TTT TANee NTTeeETTeeTTT TT TM CETTE ETT<br>10 [-1] CT COING ATT 10 [-2] UUI-TANIN-TENE BYTE ETHIE UI<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
7
## **OptiMOS[TM]** 5 Power-MOSFET, BSZ031NE2LS5 25 V
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**----- Start of picture text -----**<br>
300 ee ee ee | ee 5<br>a ee<br>250 a ee ee 2 ee | |<br>10 V 4 3.5 V<br>>eee<br>— fe SF<br>4.5 V<br>—— ae ee tit 4 V ee<br>TY Ty ey<br>200 4.5 V<br>5 V<br>es (| ee ee 3 SS<br>5 V [ff 3.5 V ee ee a 6 V a 7 V<br>= Dy for —— 8 V ——<br><x 150 eeee 22 | | eeeA 2 ee ee = a ———————— 10 V So<br>3.2 V<br>eta|7|) 2)2heeeeeee eeee eee ee eee 2<br>100<br>3 V<br>2) ar eee<br>| 7 A ee ee ee eee<br>2.8 V 1<br>50 ——————ANZD/C. ee—_— PET TT EEE yy<br>|W aes<br>1 Ze ee ee<br>| a ee ee ee ee<br>0 | A rr ee ee ee ee 0<br>0 1 2 3 0 10 20 30 40 50<br>V DS [V] I D [A]<br>I D=f( V DS ); T j =25 °C; parameter: V GS R DS(on)=f( I D ); T j _=25 °C; parameter: V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
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200 250<br>ee ee | ee<br>160 ee eee | ee 200 —<br>eeSeesee ee | ee eee | ULL |eea4<br>120 ee eee eee 150 ZO<br>eex= | | |) ttfeee A<br>ee A<br>80 ee ee eee ee 100 :<br>ee A<br>seers | hE AL|<br>40 50<br>150 °C<br>ee | 25 °C<br>= Po Pili]<br>— [|] S$ | || i | | yf<br>SeerYyereresr<br>ee<br>0 ee eeesy} 0 fl | tl tt tt<br>0 1 2 3 4 5 0 40 80 120 160<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
8
5 Power-MOSFET, BSZ031NE2LS5 25 V
## **OptiMOS[TM]**
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**----- Start of picture text -----**<br>
5 2.5 p {| [| [| [| Jf Jf Jf Jf Jf Jf Jf]<br>p [| | [ [ [| ff ff ft ft fy<br>4 COPPPPAP 2.0 pF [| | [| | [| [ | f[ Jf Jf JT |<br>PT |) GRREREEREEEE<br>7L p [| | [ [ [| [ ff ff fy<br>a fF ft | fT | [| fT FT [ Ff Ff JT |<br>ra eea a ee Re ee De<br>3 1.5<br>|— typ A =_ ppPf[|{[ |[|[| [|[|[| [[|joe][|[| 7S[| fTFS.fT[ ft|| ftft[| fTTf<br>=<br>2 aT EEL — EE | | 1.0 paee[| | [ [ [| [ ffeeff fy<br>fF ft | fT | [| fT FT [ Ff Ff JT |<br>pF [| | [| | [| [ | f[ Jf Jf JT |<br>ee ee<br>1 Pettey 0.5 fFPp [| [|| [|[| [| [|[| fT[| [| f[[| fF[| [Jf JTJf]|<br>p [| | [| [| [| [| f[ {| [| f[ Jf]<br>p [| | [ [ [| ff ff ft ft fy<br>0 COPEPCEP 0.0 pFp [[| {|| [|[ [|| [[| [[| [| f[{| Jf[ [|Jf JT[||<br>-60 -20 20 60 PTT 100 140 180 |) -60 GRREREEREREE -20 20 60 100 140 180<br>T j T j<br>[°C] [°C]<br>R DS(on)=f( T j ); I D =20A; V GS =10V V GS(th)=f( T j ); V GS= V DS ; I D =250 yA<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>CC CO CO L] 25 °C a RS<br>150 °C<br>|aa[| SS|sstf ff | | ae | f[ f tf FfReFfeeeFf Ff ft ft ff<br>Ciss<br>10 [3] mt[i| | | | | | yf 10 [2] ttt| ee<br>a _—} —} —} —} — } —}—_}—_ + Ff —<br>ee Aee a Coss a PoA”<br>L a ee = aAA |<br>& ee ee<br>10 [2] | EE | | Et 10 [1] tt tet veg tt<br>po IN a A SY | COC<br>Crss<br>_—}re —_________ee a A A |<br>a ee ee eee | | | | | Jy {ft | | [ |<br>| | | | | | | | Tro ee ee<br>10 [1] Pt ttt | | yy 10 [0] tt tyfof<br>0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS y__=0.V; V GS f =1 MHz I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM]** 5 Power-MOSFET, BSZ031NE2LS5 25 V
## BSZ031NE2LS5
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**----- Start of picture text -----**<br>
10 [2] 12<br>12 V<br>a | 10 PT] tty ELLEEE<br>Pt dd<br>5 V<br>TTT TTT TTT TTT Tyr<br>a a | fl 20 V<br>8<br>a ell Sitti tt tt A<br>25 °C<br>10 [1] 6<br>SUN 100 °C T Je Gece coc<br>MIN |{MU = LYALL<br>125 °C<br>PENSE SST Va<br>ESSER 4 PT]tA<br>PTT Le dd<br>TTT NOT NYTTTINTT TTT AFT<br>LT EANETTIN TTT jp<br>2<br>AI TEE NNU NUTT y ee<br>NUN AREER EEE<br>10 [0] 0<br>10 TTI [0] 10 [1] TUIMIN 10 [2] EMU) 10 [3] | ZEeceereereecse 0 5 10 15<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Gate charge waveforms<br>28 PTT Tt tT dT cP ht tT eT<br>27 eee ues<br>Pt} | tT | hd} dT hdT cr<br>26 nn ane<br>nse<br>25 Pt tp |pee<br>-ee ELLetTT Tt<br>24<br>es ae<br>23 Pt tT | dT dT | TT TT<br>Pt tT | te dT PhP tT Tt<br>22 Pt tT | te rT PhP tT TT<br>Pt te tT tT Pr yt<br>21<br>Pt tT | dT dT | TT TT Om<br>20 Pty et TP ee te<br>-60 -20 20 60 100 140 180<br>T j PC}<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
10
**OptiMOS[TM]**
5 Power-MOSFET, BSZ031NE2LS5 25 V
Final Data Sheet
11
5 Power-MOSFET, BSZ031NE2LS5 25 V
## **OptiMOS[TM]**
BSZ031NE2LS5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2015-08-06|Release of final version|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at March 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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