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BSZ028N04LSATMA1
Power MOSFET, N Channel, 40 V, 40 A, 2200 µohm, TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 63W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 2200µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.299 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSZ028N04LS** ## **MOSFET** ## **OptiMOS[TM]** ## **Features** **==> picture [245 x 59] intentionally omitted <==** **----- Start of picture text -----**<br> * Optimized for high performance SMPS, e.g. sync. rec.<br>¢ Very low on-resistance R DS(on) @ V GS =4.5V<br>* 100% avalanche tested<br>¢ Superior thermal resistance<br>¢ N-channel<br>1)<br>**----- End of picture text -----**<br> |**Parameter**<br> ~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS|40|V| |_R_DS(on),max|2.8|mΩ| |_I_D|40|A| |_Q_OSS|28|nC| |_Q_G(0V..10V)|32|nC| **==> picture [137 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> (enlarged source interconnection)<br>= py Zoey,<br>. “Ce<br>2™<br>1 4<br>S 1 L a 8 D<br>S 2 | | 7 D<br>S 3 6 D<br>H IKED a<br>G 4 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~| |---|---|---|---| |BSZ028N04LS<br>~~Type/OrderingCode |~~|PG-TSDSON-8 FL<br>~~|~~<br>~~|~~|028N04L|-<br>~~Related Links~~| 1) J-STD20 and JESD22 Final Data Sheet 1 **OptiMOS[TM] �Power-MOSFET,�40�V BSZ028N04LS** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.�2.1,��2016-06-09 **OptiMOS[TM] �Power-MOSFET,�40�V BSZ028N04LS** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|40<br>40<br>40<br>40<br>21|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=60K/W1)| |Pulsed drain current2)|_I_D,pulse|-|-|160|A|_T_C=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|100|mJ|_I_D=20A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|63<br>2.1|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W1)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance,junction - case|_R_thJC|-|1.2|2|K/W|-| |Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.1,��2016-06-09 **OptiMOS[TM] �Power-MOSFET,�40�V BSZ028N04LS** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_GS=4.5V,_T_C=100°C| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|2.2<br>2.7|2.8<br>3.8|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=20A| |Gate resistance1)|_R_G|-|0.9|1.8|Ω|-| |Transconductance|_g_fs|50|100|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|2300|3220|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Output capacitance1)|_C_oss|-|640|900|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|52|104|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Rise time|_t_r|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Turn-off delay time|_t_d(off)|-|37|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| |Fall time|_t_f|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|5.5|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|3.6|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|5.1|7.1|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|6.9|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|32|45|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|16|22|nC|_V_DD=20V,_I_D=20A,_V_GS=0to4.5V| |Gate charge total, sync. FET|_Q_g(sync)|-|13|-|nC|_V_DS=0.1V,_V_GS=0to4.5V| |Output charge1)|_Q_oss|-|28|39|nC|_V_DD=20V,_V_GS=0V| > 1) Defined by design. Not subject to production test > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.1,��2016-06-09 4 **OptiMOS[TM] �Power-MOSFET,�40�V BSZ028N04LS** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|40|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.81|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|24|48|ns|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs| |Reverse recoverycharge|_Q_rr|-|57|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs| 1) Defined by design. Not subject to production test Final Data Sheet Rev.�2.1,��2016-06-09 5 **OptiMOS[TM] BSZ028N04LS** **==> picture [539 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 70 50<br>60<br>40<br>50<br>PINE EET<br>30<br>40 PT EN\ \ | |) yp) EE fit ty<br>ETN 30 Tis tt tee]<br>\ feet<br>20<br>\<br>20 Tt LIN LI) GeetT<br>10<br>COOP) EERE<br>10<br>0 BREEN~ \ 0 EPfeetEe ttEE ty<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>10 [3] 10 [1]<br>a a a aeeee e ee LLTE[TT TTTTTTT)tT Tit TT TTT TT<br>Sn S50 0<br>10 [2] 1 µs 10 [0] 0.5<br>10 µs<br>0.2<br>100 µs<br>0.1<br>ooo ENE = Sear AEE<br>ZO NE | TT 0.05<br>1 ms<br>10 [1] 10 [-1]<br>0.02<br>10 ms<br>DC 0.01<br>——---1-—- 4A} --+} ef ——-} —4-—--| 4-1<br>single pulse<br>10 [0] EeUII LINNNINTUTTE 10 [-2] 71)CUMSITU | HCCC<br>ECE oN CMI CIC<br>ET ATT meg<br>a RANG ill CAUCE<br>10 [-1] 10 [-3] TTT TIN ET<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS[TM] BSZ028N04LS** **==> picture [528 x 638] intentionally omitted <==** **----- Start of picture text -----**<br> 160 7<br>ene 5 V<br>10 V / 4 V ay TEL<br>140<br>Sy 4.5 V 7 6 COV TT<br>3.5 V 2.8 V 3 V<br>3.2 V<br>3.2 V<br>aNWI ASe) |<br>120<br>5<br>LZ a7 aeaey SY<br>100 ee) /7 ct ee | et | |<br>3 V<br>4<br>3.5 V<br>TL neon eee<br>80<br>W/Z 3 rT | Ji) 4 V<br>4.5 V<br>60 5 V<br>2.8 V<br>YY ES SS<br>10 V<br>2<br>MW |<br>40<br>ye|)<br>20 YO| 1 SERRE“COLE<br>0 ARE 0 PEELE TEEPE E EEL LL<br>0.0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>160 160<br>Se oe<br>a ee<br>Ss ee<br>120 120<br>ee e e e<br>ee ee a<br>a 80 Oe| 80 ee<br>ee ee<br>ee TAL<br>ee ee<br>ee fe ATT<br>40 40<br>ee || ee<br>150 °C 25 °C ee<br>es ee<br>—— val —_ | [ee]<br>Tr a<br>0 0<br>0 1 2 3 4 0 10 20 30 40<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS[TM] BSZ028N04LS** **==> picture [531 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 6 2.5<br>BEERFSTTr.[+--+}[||Tr.|r | |_ oe fo. | |[|| |<br>5 +4<br>FESR REEREEE 2.0 eee ee<br>BEER= REEE ==_ r__rTBor_ rT-_<br>4 Set EEE |__|———oBER———oPf.Po} ||<br>poee REE ee_<br>BEE R RS EEE ———— =a<br>ZS 1.5<br>EEEEa<br>EE<br>—<br>3 max<br>1.0 SSSSenoss5==<br>typ SSSSeeSs<==<br>2 5 SeeneeERRSGe<br>ESSe=eee [eee] > SeeneenenCSe<br>BEER—<br>=EEREaeEEE<br>1 ee [———] EEE 0.5 BERREESE EEEE<br>CHEE SeeRREEEEEE<br>rf<br>TLSee5BEER REEEEEE BERcaer———aREESE EEEE<br>0 0.0 | [|<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j i I D =20 ; V GS =10 Vv RS V GS(th)=f( T j ; V GS= V DS =250 I D WA<br>.<br>Diagram 115 Typ . capes m 12: Forward chara cteristics of reverse diode<br>10 [4] 10 [3]<br>}—}+—_ f+ +] —_— 25 °C — ——————=<br>== [| 150 °C<br>25 °C, max === SESSSS=<br>e Secesacooae Ciss e 150°C, max —=———=<br>——— S eocesacooaeSEe | | + A<br>PPR<br>[ 7 T TA ae<br>10 [3] See| Coss TEE==ee== 10 [2] ff go|__| __|<br>—<br>— —_ |_|<br>oh — —————==<br>——— [_aar_ |_| a Sefp<br>"CPY S SenerescccsteeC| |= r_| | [||| Soeoyan<br>10 [2] PN) | 10 [1] aeseeT | | icy zce a<br>Crss ——<br>=== Ad<br>EERE —--—<br>SESE NSS =—————=fie oe7_ro =<br>= —————4-—-FEES ttrt |<br>aSS c nESSECHSESEEEsEEE on | “i? rT<br>aa TdT;|<br>10 [1] 10 [0]<br>0 10 20 30 40 0.0 0.5 1.0 1.5<br>V DS V SD V|<br>C =f( V DS V GS OV; f =1 MHz I F=f( V SD , T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS[TM] BSZ028N04LS** **==> picture [526 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 12<br>20 V<br>oooh ott 10 ef<br>ee fff<br>8 V<br>32 V<br>PT el n/a<br>8<br>LUT e/a<br>25 °C<br>< 10 [1] OLTIINENAIT 100 °C ll 6 saaVA<br>ALUN, Pagll l = Uf<br>125 °C<br>Sao | LCL tT A | |<br>ETENNNESE 4 Ofn/afee<br>Nl ff<br>2<br>TAI LING TI o f<br>\ ABE<br>10 [0] 0<br>EE Ell<br>10 TTI [0] 10 [1] TIL 10 [2] 10 [3] | 0 A 10 RE 20 30 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [264 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> T_O™~—OTCOCOCSCSC‘“‘CSNSCOCSCSCSCSY Gate charge waveforms<br>**----- End of picture text -----**<br> **==> picture [259 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 46<br>a<br>a<br>44<br>Pt<br>a Be ee<br>ee<br>42 a<br>ee<br>40 a<br>a<br>a ie<br>38<br>a<br>Py<br>36 > 4}<br>a<br>a<br>34<br>Py<br>32 a ><br>A<br>Py<br>30 pt | | J ft Jf ft 4fF JT fT tf<br>-60 -20 20 60 100 140 180<br>T j PC]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS[TM] BSZ028N04LS** Final Data Sheet 10 **OptiMOS[TM] BSZ028N04LS** ## BSZ028N04LS |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.1|2016-06-09|Insert max values and update footnotes| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** Final Data Sheet 11
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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