Image not available
Illustrative purposes only
BSZ025N04LSATMA1
Power MOSFET, N Channel, 40 V, 40 A, 2500 µohm, TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 69W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 2500µohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.425 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MOSFET
**OptiMOS[TM] OptiMOS[TM]** BSZ025N04LS
Final
## **OptiMOS[TM]**
## ower-MOSFET, BSZ025N04LS 40 V
## **Features**
**==> picture [35 x 48] intentionally omitted <==**
**----- Start of picture text -----**<br>
R DS(on)<br>1)<br>**----- End of picture text -----**<br>
|**Parameter**<br>1<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|2.5|mΩ|
|_I_D|40|A|
|_Q_OSS|33|nC|
|_Q_G(0V..10V)|37|nC|
**==> picture [137 x 219] intentionally omitted <==**
**----- Start of picture text -----**<br>
TSDSON-8 FL<br>(enlarged source interconnection)<br>oe Biz,Bos,<br>“en<br>‘a<br>4<br>S 1 L a 8 D<br>S 2 | | 7 D<br>S 3 6 D<br>H I KED<br>G 4 5 D<br>**----- End of picture text -----**<br>
||**Package**|**Marking**||
|---|---|---|---|
|BSZ025N04LS|PG-TSDSON-8 FL|025N04L|-|
1) J-STD20 and JESD22
Final Data Sheet
2
**OptiMOS[TM] �Power-MOSFET,�40�V**
BSZ025N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.�2.1,��2014-06-27
**OptiMOS[TM] �Power-MOSFET,�40�V**
BSZ025N04LS
**==> picture [146 x 65] intentionally omitted <==**
**2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|40<br>40<br>40<br>40<br>22|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=60K/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|160|A|_T_C=25°C|
|Avalanche current, single pulse3)|_I_AS|-|-|20|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|130|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|69<br>2.1|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=60K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **3�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|1.1|1.8|K/W|-|
|Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|60|K/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See figure 3 for more detailed information
> 3) See figure 13 for more detailed information
Final Data Sheet
Rev.�2.1,��2014-06-27
4
**OptiMOS[TM] �Power-MOSFET,�40�V**
BSZ025N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **4�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.4<br>2.0|3.2<br>2.5|mΩ|_V_GS=4.5V,_I_D=20A<br>_V_GS=10V,_I_D=20A|
|Gate resistance1)|_R_G|-|1.1|2.2|Ω|-|
|Transconductance|_g_fs|55|110|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=20A|
|**Table5Dynamiccharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2630|3680|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|750|1050|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|60|120|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext,ext=1.6Ω|
|Rise time|_t_r|-|7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|27|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext,ext=1.6Ω|
|Fall time|_t_f|-|5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext,ext=1.6Ω|
1) Defined by design. Not subject to production test Final Data Sheet
Rev.�2.1,��2014-06-27
5
BSZ025N04LS
**==> picture [146 x 65] intentionally omitted <==**
## **OptiMOS[TM] �Power-MOSFET,�40�V**
## **Table�6�����Gate�charge�characteristics[1)]**
|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|6.3|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|4.2|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge2)|_Q_gd|-|6.0|8.4|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|8.1|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|37|52|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total2)|_Q_g|-|19|27|nC|_V_DD=20V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|32|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge2)|_Q_oss|-|33|46|nC|_V_DD=20V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|40|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|160|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.8|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime2)|_t_rr|-|24|48|ns|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge2)|_Q_rr|-|20|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
> 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test
Final Data Sheet
6
Rev.�2.1,��2014-06-27
Power-MOSFET, BSZ025N04LS 40 V
**OptiMOS[TM]**
**==> picture [539 x 267] intentionally omitted <==**
**----- Start of picture text -----**<br>
80 50<br>70<br>40<br>60<br>50 ee<br>30<br>40<br>ee Nee SE 20<br>30<br>yy NG | Erp<br>20<br>10<br>so | 7 tt]<br>10 \ |} tt<br>aaa\ Jt)<br>0 0 } yy ty<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>f P tot=f( T C) ate I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>a ee eee LT TTT TTT TTT TTT TTT Tn<br>Eth CoNCE T<br>10 [2] 1 µs 10 [0] 0.5<br>10 µs<br>100 µs 0.2<br>TA H EH = 0.1 ML AIO<br>1 ms<br>0.05<br>2 10 [1] L ZEEE ARENTUNOE Pg 10 [-1] = ee Hl<br>WW 10 ms NEU PLETE 0.02<br>DC<br>aaee ANNNINTIN BBBEEE ACT 0.01 MA TT ETE [TTT] TTET<br>single pulse<br>TAN Ea<br>10 [0] 10 [-2]<br>ITNNT A LAT A<br>FEa eeSEH FEHRLTT TT TTTTTTEE HE<br>CS TE CMI CeCe CCC<br>10 [-1] ANG iilll 10 [-3] SE TUIINE UAE EINERTITAT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS t p<br>[Vv] [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
7
## **OptiMOS[TM]**
## Power-MOSFET, BSZ025N04LS 40 V
**==> picture [528 x 599] intentionally omitted <==**
**----- Start of picture text -----**<br>
160 5<br>5 V 4 V<br>10 V 3.5 V 3.2 V 2.8 V<br>140 4.5 V<br>3 V<br>Sfoy ir...| 4 A<br>120 3.2 V<br>UY 3 V — ee— el<br>100 Ma | 3.5 V<br>|) 3<br>4 V<br>80 4.5 V<br>7) A 5 V<br>2.8 V<br>2 10 V<br>60 f=> E EE.<br>e/a ee<br>40<br>WWy) 1<br>20<br>YO — +--+<br>| A eee ee<br>0 yp | | | | | | | fT ff 0 es<br>0.0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>160 a ee ee es ee 160 po | | | | | | fle<br>| P| | | | lt Ure<br>120 ee ee ee ee ee 120 ee ee ee eee<br>ee ee ee ee ee ee ee eeee<br>Pp | | | TT P| | [TA | | ff<br>ee ee ee ee ee eee P| | yt | | |<br>a 2 80 ee ee ee eee eee 80 | | y | | | | |<br>ee ee PF [fyi | | | | |<br>ee ee ee 2 eee Fy | | | | | [|<br>40 ee ee ee | ee 40 pf; | | | [| | [|<br>| | | | | fy | fl pf | | | | |<br>150 °C 25 °C<br>es ee ‘ff | | | | {| | ft |<br>| | | | Yf7; | | | yo| | [| | [| | [|<br>0 eo 0 PY | | | | | | ff<br>0 1 2 3 4 0 10 20 30 40<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
8
## **OptiMOS[TM]** Power-MOSFET, BSZ025N04LS 40 V
**==> picture [528 x 265] intentionally omitted <==**
**----- Start of picture text -----**<br>
5 | | {| | | [| | | [| | 7 ff 2.5 | | {| | [| [| | 7T [| | 7 Jf<br>ee ee eee | | [| [ fT tf ft fT fT ft tT<br>a ee eee a ee eee<br>| | {| | | [| | | [| | YI | | | {| | | {| | | | | | [|<br>4 | ft of | fT TT A 2.0 | | [| f fT ft ft ft fT ft tT<br>ee ee ee ee eee Pf | ft ft ft<br>ee eee a ee eee<br>| | {| | | [| | | # | Yl [~~ | | | [| | | [| | | [|<br>ee eee eee ee | | Peet ft ft ot ft<br>3 eee Ae eee 1.5 P| | | ABA TT<br>| | | | | | Ar | Yt | ft} lf | | {| | | PA | [| | 7 [|<br>ee| max ae eee | | [| [| fT fT [Ay ty<br>| | || | |]er[Ter] |lhld|l lhl Pot| | |{| ft| ft| [|tt|UN| [wT Tf<br>2 typ 1.0<br>4ee | ee Pf | ft ftTR<br>Lg se ee eee aeee<br>| ft | of| fT| {|tt | | [| | | Jf | | | {[ | |[ fT| {|tf ft| fT| fT| ft| |tT [|<br>1 a ee ee eee 0.5 Pf | ft ft tt<br>| | {| | | [| | | | | 7 [| | | {| | | [| | 7| [| | 7 Jf |<br>ee ee eee | | [| [ fT tf ft fT fT ft tT<br>a ee ee eee a ee eee<br>| | {| | | [| | | | | 7 Jf | | | {| | | {| | | | | | [|<br>0 | ft | ft tT 0.0 | | [| fT fT fT ft fy fT ft tT ft<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j yt V GS= V DS I D 2280 HA<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>
**==> picture [527 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>ee ==<br>A A CH | 25 °C150 °C a———SC|<br>; | | | | | [| | | [ | J tT tT ft ft i 25 °C max | A GG<br>Ciss 150 °C max<br>Se eee | a<br>Fe Proryrse)} Tt tt<br>10 [3] Coss 10 [2]<br>PPS | L Eed er<br>SS a GO sO 7 es yA, CO<br>Ns a a a Oy<br>L iNet ES SY _ | | | | fT ft ht UT hp<br>& PAA ET tT tt tT ET | ET TT | o/s ee<br>HORSE FPPT TT reyPyyFeet<br>10 [2] PEEPS Crss | 10 [1] EE<br>[or ef<br>pot fT NQ a OO (lO OO<br>AA<br>|a| | tT | tt ee| PEEeee a a FYee<br>PLTELPi tte tT tT EE ET TT EP SRRSS Sie<br>10 [1] 10 [0]<br>TEP TEP EET EE) ) 0 LEE ETTEE<br>0 10 20 30 40 0.0 0.5 1.0 1.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
9
V Power-MOSFET, BSZ025N04LS 40
## **OptiMOS[TM]**
**==> picture [526 x 600] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 12<br>20 V<br>a | 10 Po} ff<br>Pt FP 8 V 32 V<br>TTT n/a<br>PTT PI Sfp<br>8<br>el e/a<br>25 °C<br>10 [1] 100 °C 6<br>UIMTNOMIN I s SEA<br>125 °C<br>SSE RSS Z<br>aeea STee Nl 4 fefe<br>INSEE Y<br>IETIM TUTTE NUTTIN 2 p y“| | |<br>10 [0] \ 0 fi | | | | | ft<br>10 [0] 10 [1] CML 10 [2] TN 10 [3] | | 0 AR 10 REE 20 30 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>— Gate charge waveforms<br>46 a a Da ee ee es es es<br>ee ee Ves<br>44 a a ee<br>4} 4 eeoree ee Q,<br>ee<br>42 ee ee or<br>a<br>40<br>2a<br>38<br>eeer<br>4}<br>36<br>+ | 4} + 4<br>a a ee ee ee ee ee<br>34<br>SSSSSSSESSS] /<br>32 4 3 5<br>——— ese<br>30 oe | 2 Oe<br>-60 -20 20 60 100 140 ora On<br>T j []<br>V BR(DSS)=f( T j I D pO<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
**==> picture [265 x 13] intentionally omitted <==**
**----- Start of picture text -----**<br>
— Gate charge waveforms<br>**----- End of picture text -----**<br>
Final Data Sheet
10
**OptiMOS[TM]**
Power-MOSFET, BSZ025N04LS 40 V
Final Data Sheet
11
Power-MOSFET, BSZ025N04LS 40 V
## **OptiMOS[TM]**
## BSZ025N04LS
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.1|2014-06-27|Rev. 2.1|
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →