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BSZ024N04LS6ATMA1
Power MOSFET, N Channel, 40 V, 130 A, 2400 µohm, TSDSON-FL, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6
- Qualification: -
- Power Dissipation: 75W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSDSON-FL
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 130A
- Drain Source On State Resistance: 2400µohm
- Gate Source Threshold Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.512 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSZ024N04LS6** EE Gifineon
## **MOSFET**
> **OptiMOS** ™ 6 Power-Transistor, 40 V
## **Features**
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R DS(on)<br>1)<br>**----- End of picture text -----**<br>
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8 7 6 5 5 6 ay 7 8<br>1 2 3 4 4 3 2 1<br>**----- End of picture text -----**<br>
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|||||||
|---|---|---|---|---|---|
|Drain|
|Table|1|Key|Performance|Parameters|Pin 5-8|
|Parameter|Value|Unit|
|Gate|*1|
|V|DS|40|V|Pin 4|
|R|DS(on),max|2.4|m|Ω|Source|
|*1: Internal body diode|Pin 1-3|
|I|D|130|A|
|Q|oss|28|nC|
|Q|G(0V..10V)|25|nC|
|Q|G(0V..4.5V)|12.3|nC|
**----- End of picture text -----**<br>
~~Type/OrderingCode |[|__|]~~ **Package Marking**[ Related][Links] BSZ024N04LS6 PG-TSDSON-8 FL 24N04L6 -
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ024N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.2,��2021-02-22
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ024N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|130<br>92<br>109<br>77<br>24|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_THJA=60°C/W2)|
|Pulsed drain current2)|_ID,pulse_|-|-|520|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|137|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|75<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=60°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|2|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|60|°C/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.2,��2021-02-22
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ024N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.1<br>2.8|2.4<br>3.4|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=20A|
|Gate resistance|_R_G|-|1.1|-|Ω|-|
|Transconductance|_g_fs|-|100|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=20A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1800|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|570|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|19|-|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|6|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|17|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|3|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.7|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|2.8|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|3.2|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|5.1|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|25|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.7|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|12.3|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|10.6|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|28|-|nC|_V_DD=20V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definitio Final Data Sheet
Rev.�2.2,��2021-02-22
4
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ024N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|75|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|520|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.79|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|19|-|ns|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge1)|_Q_rr|-|44|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.2,��2021-02-22
5
**OptiMOS BSZ024N04LS6**
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80 Sn a 140 a<br>70<br>120<br>pp ——<br>60<br>100<br>50 SENSES EF —<br>SS 80<br>40<br>SN fg<br>60<br>30 a — oe<br>pf es es<br>40<br>20 a St a<br>a<br>a 20 ee<br>10 A 1<br>ee es es|<br>0 Pot | EE NT 0 aee<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C T C<br>P tot=f( T C) I D=f( T C V GS ≥<br>CT [OOOSSOCOS] [°C] [C][“‘“CSSCSC] QO ——SCS [° C ] “CSSCOC‘“‘<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [3] 10 [1]<br>single pulse<br>1 µs 0.01<br>AR P HET i 0.02 TE TT TTT<br>0.05<br>10 [2] RN NN ST 10 µs I 0.1 |<br>0.2<br>SSS Se I WIM ETIU P<br>0.5<br>FOF7 SP 100 µs sat 10 [0] E h es||||ll_ e | |<br>NENT, e r r o L l<br>10 [1] NSN lll Se ieee eee sens meet eect<br>< aee e e cSs 1 ms ee aeS aeee eelll<br>DC<br>10 [0] A 10 ms ae ne<br>eres SS EN NEIEEEEH “i 4<br>10 [-1]<br>SSA)\ a<br>10 [-1]<br>== a<br>cc a<br>Sn SS SSS at A<br>10 [-2] eerie a) } 10 [-2] EINEaEVIE PE||<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS BSZ024N04LS6**
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160 7<br>3.5 V<br>4.5 V 3 V<br>eH PF) i | pet ye ft td pe dy<br>140 ee 10 V | : 6 SSE a ee ee ee ee ee<br>ay 4 V ALTy, eet= rr<br>120<br>5<br>5 V ee<br>100 Meet ee Qe GO<br>HT | || ERE ERRREERE<br>4 3.5 V<br>< 80 U M L Soe<br>M T BE Seeocrreeeeeeceecr<br>OT Ae 3 ee 4 V<br>3 V<br>60 0 /RRRRRRRRReeeeeeeeeeeee) 4.5 V<br>i "se a 5 V<br>WELLL HeeT PPPP—————r—errr——_—_—<br>2 10 V<br>40 WeeEE R e rer e er fo<br>2.8 V<br>MATIC | R E E<br>20 | i/AURDCRENSSs/| pierre ae co nennnnAenl— 1 o o<br>J | a<br>| Pee| Ls i<br>0 W/FETE EEE 0 eees ee eG<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>160 7<br>SRR ee ee eee<br>POPPE eee ee FERRER<br>140<br>6 PETE EEEEEEEEE<br>SRRRRRREERRSEEEE TT TIAL TT ET yy<br>EEE ~------|\---------------<br>120<br>5<br>SEE | EEE<br>100 SEeeeeeeeeeeenCEEEEEE ieee| 4 FEREECEEEEOSSEE. “SCEE 175 °C EEE<br>_ EEC) | EERE RSE<br>= 80 PTT PPT TPA 5 PERE ECA CEEE EE, PERE<br>CEEEEECEECEECE] 2 3 ee<br>60<br>PEEECHECHECHEEHEH | EEEEEEEREPREE EEE 25 °C<br>2<br>40<br>SHRRARURWGWGE ARBRE | EEEEEECE= ssiii E PREECETEEPTCEEcooe<br>20 BHCOOP‘ 1 LiFERR tT ET TTTEEEEE ey Tey EEEey EEEyt ey ey E EEeT<br>175 °C<br>0 SERRE AAPeee 25 °C 0 FE CEEE CE CEE EE EEER EEE Eee<br>0 1 2 3 4 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS BSZ024N04LS6**
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2.0 PTT TITTLE LLL EEL 2.4 LL ET TT TTT TTT TTT TT EET<br>PTTL Pr LE EET TEE TTT TET TET EET EET<br>Wa<br>TT CELE LILLE LILLIE LTE TELL<br>2.0<br>1.6 PTET TTT TEE EEE ET EAA7 LEPCOR RALET CRSECCCeeeeee TTT TTT ET ET ETT EEE<br>~ My TN<br>1.6<br>° PCECECELEL LLL EEE EL PITT TT TT TT TPN PAE ET ET TT<br>nq 1.2 PTT AT LEE TET ETT TTT TNA EEE<br>o~°®LeeaA A PEE TET TETeeeTT TTTETALSs IN EEE<br>1.2<br>3E Pa7 \ IN 2500 µA<br>fo}= 0.8 BaPa| BERN\<br>2 COTE 250 µA<br>=B Grcreeeeeececeeeee 0.8 SOPTie ETTeeTET TTT TTTed eeET [TEE] ee<br>0.4 PT TT TELL LLLLLLLLELELELL LLL LEE TET ETT TTT TET ET TTT EEE EE<br>TTT 0.4 PE EET TET TET ET EEE EE EE<br>ST PE ET TTT TTT TTT TET EET EET EET<br>PETE LEE TET ETT TTT ET TTTEEE<br>0.0 PETE TTT TEE E TEET E TTEE EEE E EEEELE] 0.0 PCCPCEEPTET<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>
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10 [4] 10 [3]<br>SS f—F 25 °C E RRER<br>25 °C, max<br>BEE EE REESE | 175 °C EECREEEEEEEERE<br>175 °C, max<br>——————————————_}- be<br>Ciss<br>bsnnsnrssnflaHHaaHle?<AHT0RUD<br>SSSAT I E E TTTT4 Eee<br>10 [3] 10 [2]<br>SS ————————— BREE EEE AT<br>a Ds SS | AA 5 A A |<br>o aes ee eee eeFEC CCCP eeeee eee AeCE<br>s NG i ee ee ee ee ee ee ee Coss LETT ET TTT ETT ere<br>Nit Tet TT TT PT PELLET ELLE TEE<br>PENCEL EEL EEL EEE<br>10 [2] 10 [1]<br>ee eeWEPOPET EEE<br>a A ee<br>a Ss ee es ee<br>yrA| | [| [TN [| [ 7 7 [ JT T JT JT TJ eeeFEC AREEe ieee<br>| {| {| | | IAT | PT | cE TE TT BRR ee<br>tit tt Crss tt PELE EEE<br>10 [1] PUL ELLE eee 10 [0] EEEEEELLELLLLET DEE<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
## **OptiMOS BSZ024N04LS6**
**==> picture [526 x 634] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] ee 10 Poo TT<br>a 8 V LAT<br>20 V<br>es II SA BERRVi,<br>rT [TTT] TT TTT 32 V Ae<br>a Pe e et<br>8<br>| -EEEEEEEEEEEEEEE<br>”N LI LTTTT TT TT TTT TT TT TtErgattCET tty<br>10 [1] beatin NI a 25 °C Sy, Se<br>s CEEEEEEE<br>==pT EE RTTSEE EE SSNTTEEETTT 6 FRETTHEE | AAPEEEHEE<br>a LETELELLETE LAYETTE<br>= Pt TE ET NATTA co rE ETL AATTT<br>< Sng N = Lt<br><x ee ee 100 °C a PCCCECEE<br>PETS 4 a<br>10 [0] ICT | ECEEEECECEE CEECEHE CHE<br>SS | SEES<br>150 °C<br>a a a a Y aaa<br>rT TTT TT TTT 2 BES? 4 0<br>EAHA<br>EHH | GREE EEE<br>CTC LIALARE EEE TTTEER Tt ttt tt tt tT TE E E E ET<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] CT 10 [3] | 0 A 4 8 12 R 16 20 24 28<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =20A pulsed, T j =25 °C; parameter: V DD<br>Diagram Gate charge waveforms<br>44 Li TTT TT TT eT eee ett yey et eT eT ey of<br>Lit iTTT TT Tt tt ttt tte yet yt te ty tT<br>LT TTT TT ET ete eee ete et yey ee tT ety Ty<br>LTT TTT Tt te tT eet et et ee eee ee Vos<br>43 LTT TTLiL TTT TTITTT Titet ttTt ttt ttttt tee ttttttt tttetryeye tt Q<br>LTT TT TTT tet tT ttt tet tt tt ty g<br>LTT TTT TTT eee eee teeter et te Tyee ety<br>Lit iTTT TT TT ttt ttt ttt tty Yi tty tt<br>42 LTLit TTTiT TTTTTTtET Tit ete tttee eettt ttye ye Tyevit ttttyte tytt<br>LTT TTT TET ett et ete tye yet te ty ty<br>Ss= L itTT T TT TT IT TitT tT t ttt t TA YttT ttet e ttety tt<br>41 LiLTTTLTT TT TTT TTI TitT ttTt ttttt yA ATTTT ee ey TT<br>LT TTT TT ETE TTT yA TT eT et ety TT<br>LTT TTT TTT TTT yA ee ee et<br>LT TTT TT Ti TTA tee et et tte et ey TT<br>40 LiLTTTT TIT iT“ tt tte Tt yt Ey tT<br>BERR4<br>Li TTIT TT iTyYtT TT Tt ttt tT ty tt ty tt<br>LTT TT TITTY ttt tet tt tt<br>LiLTTI TIT YT TTT TT ttt ttt yt et ty tf<br>39 LTT TITTYLTT TT YE tTTTettTt eTtteteteet eytt ettt tete ey ft O<br>EEALTTA EEE EEE EEEEEE Rom| | ew Q gate<br>Lit iI4; {TTTT tE T Eittee eeettt tteee eTtT etTtyt TEee Tyty ttTy<br>38 LET TT TE ET ET ey tit tT ttt yt ttt it tt Qa<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ024N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
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**----- Start of picture text -----**<br>
NUMBER:PACKAGE - GROUP PG-TSDSON-8-U03<br>REVISION: 03 DATE: 20.10.2020<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>b 0.24 0.44<br>c (0.20)<br>D 3.20 3.40<br>D1 2.19 2.39<br>D2 1.54 1.74<br>E 3.20 3.40<br>E1 2.01 2.21<br>E2 0.10 0.30<br>e 0.65<br>L 0.30 0.50<br>L1 0.40 0.60<br>L2 0.50 0.70<br>aaa 0.06<br>**----- End of picture text -----**<br>
## **Figure�1�����Outline�PG-TSDSON-8�FL,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.2,��2021-02-22
## **OptiMOS BSZ024N04LS6**
## BSZ024N04LS6
## Previous Revision
|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2018-06-04|Release of final version|
|2.1|2020-05-12|Update current rating|
|2.2|2021-02-22|Update package drawing|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
11
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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