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BSZ021N04LS6ATMA1
Power MOSFET, N Channel, 40 V, 147 A, 1800 µohm, TSDSON-FL, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6 Series
- Qualification: -
- Power Dissipation: 83W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 83W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0018ohm
- Transistor Case Style: TSDSON-FL
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 147A
- Drain Source On State Resistance: 1800µohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.571 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSZ021N04LS6** ES Giineon
## **MOSFET OptiMOS[TM]** 6
## **Features**
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**----- Start of picture text -----**<br>
application 8 7 6 5 5 6 ay 7 8<br>R DS(on)<br>1) 1 2 3 4 4 3 2 1<br>**----- End of picture text -----**<br>
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|||||||
|---|---|---|---|---|---|
|Drain|
|Table|1|Key|Performance|Parameters|Pin 5-8|
|Parameter|Value|Unit|
|Gate|*1|
|V|DS|40|V|Pin 4|
|R|DS(on),max|2.1|m|Ω|Source|
|*1: Internal body diode|Pin 1-3|
|I|D|147|A|
|Q|oss|34|nC|
|Q|G(0V..10V)|31|nC|
|Q|G(0V..4.5V)|15|nC|
**----- End of picture text -----**<br>
~~Type/OrderingCode |[|__|]~~ **Package Marking**[ Related][Links] BSZ021N04LS6 PG-TSDSON-8 FL 21N04L6 -
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] 6�Power-Transistor,�40�V BSZ021N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.3,��2021-02-23
**OptiMOS[TM] 6�Power-Transistor,�40�V BSZ021N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|147<br>104<br>123<br>87<br>25|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_THJA=60°C/W2)|
|Pulsed drain current2)|_ID,pulse_|-|-|588|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|189|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|83<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=60°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|1.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|60|°C/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.3,��2021-02-23
**OptiMOS[TM] 6�Power-Transistor,�40�V BSZ021N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.8<br>2.4|2.1<br>3.0|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=20A|
|Gate resistance|_R_G|-|1.3|-|Ω|-|
|Transconductance|_g_fs|-|110|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=20A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2100|2700|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|690|900|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|22|38|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|1.6|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|18|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|5.6|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|3.3|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|3.8|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|6.0|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|31|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.6|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|15|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|12.8|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|34|-|nC|_V_DD=20V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.3,��2021-02-23
4
**OptiMOS[TM] 6�Power-Transistor,�40�V BSZ021N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|83|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|588|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.79|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|22|-|ns|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge1)|_Q_rr|-|55|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.3,��2021-02-23
5
**OptiMOS[TM] BSZ021N04LS6**
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Final Data Sheet
6
**OptiMOS[TM] BSZ021N04LS6**
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Final Data Sheet
7
**OptiMOS[TM] BSZ021N04LS6**
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Final Data Sheet
8
**OptiMOS[TM] BSZ021N04LS6**
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**----- Start of picture text -----**<br>
10 [2] 10<br>ee PS<br>8 V<br>— a — — i 20 V32 V Pi; | | | TT ge<br>aP F]<br>8<br>ee ft | tT tT tT | fe<br>\ ~ it | | | | | cP hd rT | Ym Tf<br>NN 25 °C FEE EEE EE EEEARE<br>10 [1]<br>poSS SUTINNTaTTTGe | 6 eeEEEEEEEPEYEEL ee<br>OO eee<br>e<xes ee-eeNeeA NE NlPENT 100 °C Je>eS FerFerrer7/2rryF Fee<br>4<br>10 [0] aee a At 150 °C =Fi EREa <aGREE E S<br>a ee ee ee ee ee |_|<br>aLTSSSETT TTee | 2 TTED OC yieeerrreeeteCAyey ye yy Ty<br>ee ell FA} ii tp ef ft ft tt<br>10 [-1] UTIEER ETM, | 0 [ytYiRRR| tt;| | || tt| | || tTThtTTlhEtT rT hEET TTht<br>10 [0] 10 [1] 10 [2] 10 [3] 0 4 8 12 16 20 24 28 32<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =20A pulsed, T j =25 °C; parameter: V DD<br>Diagram Gate charge waveforms<br>44 TIITLIILL LILLIE<br>CECE<br>CECE<br>PEELE EEE Ves<br>FECEEE Eee<br>43<br>CECE P<br>SSS 4 g<br>SSS4<br>CECE<br>42 SRS 4<br>CECCEEEE<br>CECE Eee ZEEEA<br>POCCEEEe<br>> FECEEE Eee Aee<br>a 41 CECE Ce<br>CECEECA<br>CECEEEEAE<br>Bee, eee<br>SESS ae<br>Bee eeeedee<br>40<br>SSSR 4c<br>BRS eeeAe<br>SSSR SSe>4S<br>SRS REDSee<br>39 BSGGe DS 4Seeeee<br>COCOA A<br>POCCOCAee Rom| | ew Q gate<br>COE<br>38 SECO Qoa<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] 6�Power-Transistor,�40�V BSZ021N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
**==> picture [187 x 203] intentionally omitted <==**
**==> picture [148 x 153] intentionally omitted <==**
**==> picture [148 x 191] intentionally omitted <==**
**----- Start of picture text -----**<br>
NUMBER:PACKAGE - GROUP PG-TSDSON-8-U03<br>REVISION: 03 DATE: 20.10.2020<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>b 0.24 0.44<br>c (0.20)<br>D 3.20 3.40<br>D1 2.19 2.39<br>D2 1.54 1.74<br>E 3.20 3.40<br>E1 2.01 2.21<br>E2 0.10 0.30<br>e 0.65<br>L 0.30 0.50<br>L1 0.40 0.60<br>L2 0.50 0.70<br>aaa 0.06<br>**----- End of picture text -----**<br>
## **Figure�1�����Outline�PG-TSDSON-8�FL,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.3,��2021-02-23
**OptiMOS[TM] BSZ021N04LS6**
## BSZ021N04LS6
## Previous Revision
|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2018-05-18|Release of final version|
|2.1|2018-08-10|Update continuous drain current|
|2.2|2020-05-12|Update current rating|
|2.3|2021-02-23|Update package drawing|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
11
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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