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BSZ018N04LS6ATMA1
Power MOSFET, N Channel, 40 V, 40 A, 1600 µohm, TSDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 6
- Qualification: -
- Power Dissipation: 83W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 83W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0016ohm
- Transistor Case Style: TSDSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 40A
- Drain Source On State Resistance: 1600µohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 2.3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.703 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSZ018N04LS6**
## **MOSFET**
## **OptiMOS**
## **Features**
* Optimized for synchronous rectification
_R_ DS(on)
|**Parameter**<br>1<br>Key ~~Performance~~|**Value**<br>~~Performance~~ ~~Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|40|V|
|_R_DS(on),max|1.8|mΩ|
|_I_D|158|A|
|_Q_oss|34|nC|
|_Q_G(0V..10V)|31|nC|
|_Q_G(0V..4.5V)|15|nC|
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**----- Start of picture text -----**<br>
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|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSZ018N04LS6<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TSDSON-8 FL<br>~~**|**~~|18N04L6|-|
Final Data Sheet
1
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ018N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.1,��2020-03-31
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ018N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|158<br>112<br>129<br>91<br>27|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=4.5V,_T_C=25°C<br>_V_GS=4.5V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=60°C/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|633|A|_T_A=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|189|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|83<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=60°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|1.8|°C/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-|
|Device on PCB,<br>6 cm² cooling area|_R_thJA|-|-|60|°C/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.1,��2020-03-31
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ018N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.3|-|2.3|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|1.6<br>2.1|1.8<br>2.7|mΩ|_V_GS=10V,_I_D=20A<br>_V_GS=4.5V,_I_D=20A|
|Gate resistance|_R_G|-|1.3|-|Ω|-|
|Transconductance|_g_fs|-|110|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=20A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|2100|2700|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|690|900|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|22|38|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|1.6|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|18|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|5.6|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|3.3|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|3.8|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|6.0|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|31|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.6|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|15|-|nC|_V_DD=20V,_I_D=20A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|12.8|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge|_Q_oss|-|34|-|nC|_V_DD=20V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.1,��2020-03-31
4
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ018N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|83|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|633|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.78|1|V|_V_GS=0V,_I_F=20A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|22|-|ns|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
|Reverse recoverycharge|_Q_rr|-|55|-|nC|_V_R=20V,_I_F=20A,d_i_F/d_t_=400A/µs|
Final Data Sheet
Rev.�2.1,��2020-03-31
5
**OptiMOS BSZ018N04LS6**
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Final Data Sheet
6
**OptiMOS BSZ018N04LS6**
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Final Data Sheet
7
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Final Data Sheet
8
**OptiMOS BSZ018N04LS6**
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**----- Start of picture text -----**<br>
10 [2] 10<br>ee PooT ptpLLLLLIITA<br>8 V<br>— a — — i 20 V32 V Pi; | | | | tt | lr lr<br>aI }<br>8<br>Ch fT tt | tT tT tT et<br>\ ~ it | | | | | cP hd ht | YA Tf<br>NN 25 °C SEREEEEFEHH AFAR<br>10 [1]<br>poSS SUTINNTaTTTGe | 6 EEEEee E L,EEEEPeeEEE<br>OO aA eee<br>e<xes ee-eeNeeo NE ENT 100 °C fe>& FrFrPrrrrrryyyy er<br>Nl PT rT Tyr<br>4<br>10 [0] CTTU |ENCSM 150 °C | iGEERa <,EEE EEE<br>a ee ee ee ee ee ‘Amal<br>aneSaisieee | | 2 TTEDCOYyi4 DER rrreeeEEey eeeery yy yt<br>ee ell FAY} ii tp ef ft ft tt<br>10 [-1] EU,ETI ECT | 0 YiARERR[yt| t| ||| | tt| | || teTh tt T hE UT hEtTht<br>10 [0] 10 [1] 10 [2] 10 [3] 0 4 8 12 16 20 24 28 32<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =20A pulsed, T j =25 °C; parameter: V DD<br>Diagram Gate charge waveforms<br>44 TIITLIILL LILLIE<br>CECE<br>CECE<br>PEELE EEE Ves<br>FECEEE Eee<br>43<br>CECE P<br>SSS 4 g<br>SSS4<br>CECE<br>42 SRS 4<br>CECCEEEE<br>CECE Eee ZEEEA<br>POCCEEEe<br>> FECEEE Eee Aee<br>a 41 CECE Ce<br>CECEECA<br>CECEEEEAE<br>Bee, eee<br>SESS ae<br>Bee eeeedee<br>40<br>SSSR 4c<br>BRS eeeAe<br>SSSR SSe>4S<br>SRS REDSee<br>39 BSGGe DS 4Seeeee<br>COCOAPOCCOCAee RomA | | Qey Q gate<br>COE<br>38 SECO Qoa<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM�] 6�Power-Transistor,�40�V BSZ018N04LS6**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
## **TSDSON-8-25/-26**
**==> picture [404 x 595] intentionally omitted <==**
**----- Start of picture text -----**<br>
j m<br>MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 0.90 1.10 0.035 0.043<br>b 0.24 0.44 0.009 0.017<br>b1 0.10 0.30 0.004 0.012<br>b2 0.24 0.44 0.009 0.017<br>D=D1 3.20 3.40 0.126 0.134<br>D2 2.19 2.39 0.086 0.094<br>D3 1.54 1.74 0.061 0.069 DOCUMENT NO.<br>D4 0.21 0.41 0.008 0.016 Z8B00158553<br>E 3.20 3.40 0.126 0.134<br>E4 2.01 2.21 0.079 0.087 SCALE 0<br>E6 0.10 0.30 0.004 0.012<br>e 0.65 (BSC) 0.026 (BSC) 2.5<br>N 8 8<br>L 0.30 0.51 0.012 0.020 0 2.5<br>L1 0.40 0.70 0.016 0.028 5mm<br>L2 0.50 0.70 0.020 0.028<br>aaa 0.25 0.010<br>EUROPEAN PROJECTION<br>F1 3.90 0.154<br>F2 2.29 0.090<br>F3 0.31 0.012<br>F4 0.34 0.013<br>F5 0.80 0.031<br>F6 1.00 0.039 ISSUE DATE<br>F7 2.51 0.099 27-12-2010<br>F8 1.64 0.065<br>F9 0.50 0.020 REVISION<br>02<br>**----- End of picture text -----**<br>
**Figure�1�����Outline�PG-TSDSON-8�FL,�dimensions�in�mm/inches**
Final Data Sheet
10
Rev.�2.1,��2020-03-31
**OptiMOS BSZ018N04LS6**
## BSZ018N04LS6
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-02-22|Release of final version|
|2.1|2020-03-31|Update current rating|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
11
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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