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BSV236SPH6327XTSA1
Power MOSFET, P Channel, 20 V, 1.5 A, 0.175 ohm, SOT-363, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.131ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 560mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: SOT-363
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1.5A
- Drain Source On State Resistance: 0.175ohm
- Gate Source Threshold Voltage Max: 900mV
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.097 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSV 236SP** ## **OptiMOS[] -P Small-Signal-Transistor** |_V_DS|-20|V| |---|---|---| |_R_DS(on)|175|mΩ| |DS(on)<br>_I_D|-1.5|A| ## **Feature** - P-Channel - Enhancement mode - Super Logic Level (2.5 V rated) **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> • 150°C operating temperature150°C operating temperature PG-SOT-363<br>4<br>• Avalanche rated Avalanche rated 5<br>6<br>• d v /d t rated<br>3, Halogen-Free Ss A<br>3<br>2<br>1<br>¢ Pb-free lead plating; RoHS compliant Pb-free lead plating; RoHS compliant all RoHS See<br>• Qualified according to AEC Q101 VPS05604<br>• Halogen-free according to IEC61249-2-21 AES Drain<br>pin 1,2,<br>Gate 5,6<br>Type Package Tape and Reel inf Marking pin 3<br>Source<br>BSV 236SP PG-SOT-363 H6327:3000pcs/r. X2s pin 4<br>**----- End of picture text -----**<br> - 150°C operating temperature150°C operating temperature - Avalanche rated Avalanche rated - d ¢ Pb-free lead plating; RoHS compliant Pb-free lead plating; RoHS compliant d _v_ /d _t_ rated lead plating; RoHS compliant plating; RoHS compliant RoHS compliant compliant • Qualified according to AEC Q101 ## **Maximum Ratings** ,at _T_ j = 25 °C, unless otherwise specified |**Maximum Ratings**,at_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|| |---|---|---|---| |j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-1.5<br>-1.2<br>-6|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls||| |Avalanche energy, single pulse<br>_I_D=-1.5 A ,_V_DD=-10V,_R_GS=25Ω|_E_AS|9.5|mJ| |Reverse diode d_v_/d_t_<br>_I_S=-1.5A,_V_DS=-16V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_|-6|kV/µs| |Gate source voltage|_V_GS|±12|V| |Power dissipation<br>_T_A=25°C|_P_tot|0.56|W| |Operating and storage temperature|_T_j ,_T_stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|j ,stg|55/150/56|| |ESD Class<br>JESD22-A114-HBM||Class 0|| 2011-07-14 Rev 1.5 Page 1 **BSV 236SP** **Thermal Characteristics** |**Thermal Characteristics**|||||| |---|---|---|---|---|---| |**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~||||| |Thermal resistance, junction - soldering point|_R_thJS|-|-|90|K/W| |SMD version, device on PCB:|_R_thJA||||| |@ min. footprint||-|-|220|| |@ 6 cm2cooling area1)||-|-|110|| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>|<br>||_V_(BR)DSS<br>|<br>|<br>||-20<br>fT|-<br>fT||-<br>||V| |---|---|---|---|---|---| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-8µA<br>|<br>||_V_GS(th)<br>|<br>|<br>|<br>||-0.6<br>fT<br>tf|-0.9<br>fT|<br>tf|-1.2<br>|<br>tf|| |Zero gate voltage drain current<br>_V_DS=-20V,_V_GS=0,_T_j=25°C<br>_V_DS=-20V,_V_GS=0,_T_j=150°C<br>|<br>||_I_DSS<br>|<br>ttt<br>|||-<br>-<br><br>ttt<br>tt|-0.1<br>-10<br>|<br>ttt<br>tt|-1<br>-100<br>|<br>ttt<br>tt|µA| |Gate-source leakage current<br>_V_GS=-12V,_V_DS=0<br>|<br>||_I_GSS<br>||<br>|<br>||-<br>tt<br>tf|-10<br>tt<br>tf|-100<br>tt<br>tf|nA| |Drain-source on-state resistance<br>_V_GS=-2.5V,_I_D=-0.8A<br>|<br>||_R_DS(on)<br>| |<br>|<br>||-<br>tt<br>tf|193<br>tt<br>tf|285<br>tt<br>tf|mΩ| |Drain-source on-state resistance<br>_V_GS=-4.5,_I_D=-1.5A<br>||_R_DS(on)<br>|<br>|<br>||-<br>tf<br> tf|131<br>tf<br>tf|175<br>tf<br>tf|| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. 2011-07-14 Rev 1.5 Page 2 **BSV 236SP** |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-1.2A<br>2.2<br>4.4<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>228<br>-<br>pF<br>Output capacitance<br>_C_oss<br>-<br>92<br>-<br>Reverse transfer capacitance<br>_C_rss<br>-<br>75<br>-<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>ns<br>Rise time<br>_t_r<br>-<br>8.5<br>12.7<br>Turn-off delay time<br>_t_d(off)<br>-<br>14.1<br>21.1<br>Fall time<br>_t_f<br>-<br>12.2<br>18.3<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas| |---|---|---|---|---|---|---| |**Gate Charge Characteristics**||||||| |Gate to source charge<br>_Q_gs||_V_DD=-10V,_I_D=-1.5A|-|-0.4|-0.6|nC| |Gate to drain charge<br>_Q_gd|||-|-1.8|-2.7|| |Gate charge total<br>_Qg_||_V_DD=-10V,_I_D=-1.5A,|-|-3.8|-5.7|| |||_V_GS=0 to -4.5V||||| |Gate plateau voltage<br>_V_(plateau)||_V_DD=-10V,_I_D=-1.5A|-|-1.6|-|V| |**Reverse Diode**||||||| |Inverse diode continuous<br>_I_S||_T_A=25°C|-|-|-0.11|A| |forward current||||||| |Inverse diode direct current,<br>_I_SM|||-|-|-6|| |pulsed||||||| |Inverse diode forward voltage<br>_V_SD||_V_GS=0, |_IF_| = |_ID_||-|0.88|1.3|V| |Reverse recovery time<br>_t_rr||_V_R=-10V, |_I_F| =|_l_D|,|-|16.4|20.5|ns| |Reverse recovery charge<br>_Q_rr||d_i_F/d_t_=100A/µs|-|3.4|4.3|nC| 2011-07-14 Rev 1.5 Page 3 **BSV 236SP** ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS|≥ 4.5 V **==> picture [225 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> BSV 236SP<br>1.3<br>W<br>PLETE EE<br>1.1 SAAC<br>CAEN<br>1<br>THN TLL<br>0.9<br>PET \<br>0.8 SCONELEN EEE ELE EET<br>0.7<br>COTES<br>0.6<br>CCOCCCEENSEC<br>0.5<br>PEE \<br>0.4<br>PET EAA EEE<br>0.3 LLL EET ETAL ELT<br>SCOPE<br>0.2<br>PEEP<br>0.1<br>PELL \<br>0 LIE TTT LT EEN |<br>0 20 40 60 80 100 120 °C 160<br>— T A<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSV 236SP<br>-1.6<br>A SEE EeSEEEEEEE<br>PNT<br>FEE NSEEEEEEEHE<br>-1.2<br>PLT ET ENEEE EEE LLL<br>-1 StittPTET TTTT TINTNG TT<br>FEECEEEECCENCEE<br>-0.8<br>SCTE<br>FEEEECEECCEENCE<br>-0.6<br>t COE<br>-0.4 TET TP TP TT Treat<br>PIT TTT TTT TT TAT<br>ene<br>-0.2<br>PET LTE EET TTT A<br>PET LTTE ETT TTT Ey<br>0 POOL<br>0 20 40 60 80 100 120 °C 160<br>— T A<br>D<br>I<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C ## **4 Transient thermal impedance** _Z_ thJS = _f_ ( _t_ p) ## parameter : _D_ = _t_ p/ _T_ **==> picture [487 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> -10 1 BSV 236SP 10 2 BSV 236SP<br>t p = 45.0µs K/W<br> 100 µs<br>A<br>+4 ATS HHT ETE ead |<br>10 1<br>TP ARTIST tnII il<br> 1 ms<br>-10 0 x N CONCOURSSSSA<br>10 0<br> 10 ms<br>D = 0.50<br>PTE NTE TT TITERS RCE RES SES MM<br>10 -1 0.20<br>-10 -1 ar RS | | HN ISN Ue 0.10 Dh<br>0.05<br>eeeEe eeSoo 10 -2 Ac | v single pulse THTeHEC 0.02 lit<br>0.01<br>DC<br>TIE ET Srey areal |ceaea eset Ges IG aed |<br>-10 -2 TM TEA TET 10 -3 ETa TTNMME aETT aLEVINE LTTE CTT UTA Uh<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ] 10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>——_ » V DS —_ t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>thJS<br>D<br>I Z<br>**----- End of picture text -----**<br> 2011-07-14 Rev 1.5 Page 4 **BSV 236SP** ## **5 Typ. output characteristic** ## **6 Typ. drain-source on resistance** _I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 80 µs _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS **==> picture [489 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> 12 0.5<br>Vgs = - 2.4V<br>Vgs = -3.4V Vgs = -2V Vgs= - 2.6V<br>A Vgs = - 3V<br>LLL Ω RRAr Vgs= - 3.4V<br>Vgs = -3V<br>Vgs = - 3.8V<br>Vgs = - 4.5V<br>Vgs= - 5V<br>8 Vgs = - 6V<br>Vgs = -3.8V<br>0.3<br>ie Vgs = -4.5V Vgs = -2.6V<br>Vgs = -6V<br>6<br>0.2<br>| fence Vgs = -2.4V LW<br>4<br>Vgs = -2V<br>| eer<br>0.1 BA<br> jo | |<br>2 Vo gore<br>Vgs = -1.8V<br>po LLL<br>0 0<br>0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 A 11<br>- V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); | ); | V DS|≥ 2 x ||≥ 2 x |≥ 2 x | 2 x | I D| x | x R DS(on)max g fs = f( I D); T j=25°C<br>parameter: t p = 80 µs = 80 µs parameter: t p = 80 µs<br>5 8<br> A<br>S<br>TOOT = Odd<br>4<br>6<br>3.5 cee EEE er<br>EECCA 5 La<br>3<br>2.5 4<br>2 EEE Eee<br>3<br>1.5<br>PP AL CATT TTT Ty<br>2<br>1<br>HHA) 1 PEE<br>0.5<br>0 TELAT 0 PEE EL EEL EL<br>0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V 2.5 0 0.5 1 1.5 2 2.5 3 3.5 4 A 5<br>- V GS - I D<br>I D- R DS(on)<br>I D- g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D== _f_ ( _V_ GS ); | ); | _V_ DS|≥ 2 x ||≥ 2 x |≥ 2 x | 2 x | _I_ D| x | x _R_ DS(on)max parameter: _t_ p = 80 µs = 80 µs Rev 1.5 Page 5 2011-07-14 **BSV 236SP** ## **9 Drain-source on-resistance** _R_ DS(on) = f( _T_ j) parameter: _I_ D = -1.5 A, _V_ GS = -4.5 V ## **10 Gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS, _I_ D = -8 µA **==> picture [482 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 240 1.4<br>mΩ<br>TT Ee V PAE<br>200<br>98%<br>LE ELL ee EPPS<br>1<br>180<br>98%<br>BaUEE ABO a SA l<br>160 0.8<br>er er) LLNS<br>typ.<br>140<br>peg Pe INE<br>0.6<br>typ.<br>120<br>2%<br>0.4<br>ALLEL a<br>100<br>cee | LIT<br>PLPC LLL LLP<br>80 0.2<br>-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160<br>T T<br>j j<br>DS(on) GS(th)<br>R V -<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** ## _C_ = _f_ ( _V_ DS) parameter: _V_ GS=0, _f_ =1 MHz ## **12 Forward character. of reverse diode** _I_ F = _f_ (VSD) parameter: _T_ j , tp = 80 µs **==> picture [476 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 -10 1 BSV 236SP<br>A<br> pF<br>Ciss<br>a e eee -10 0 ne 1P<br>Coss<br>10 2<br>EE || APE EE EEE<br>Crss<br>-10 -1<br>en<br>T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 1 7 ee -10 -2 T ae e TLE<br>0 5 10 V 20 0 0.4 0.8 1.2 1.6 2 2.4 V 3<br> - V DS V SD<br>F<br>C I<br>**----- End of picture text -----**<br> 2011-07-14 Rev 1.5 Page 6 **BSV 236SP** ## **13 Typ. avalanche energy** _E_ AS = _f_ ( _T_ j), par.: _I_ D = -1.5 A _V_ DD = -10 V, _R_ GS = 25 Ω ## **14 Typ. gate charge** | _V_ GS| = _f_ ( _Q_ Gate) parameter: _I_ D = -1.5 A pulsed **==> picture [483 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 10 12<br>V<br>mJ<br>NEES 10 || | | | | ft | |<br>8<br>9<br>Ce EEE<br>7<br>es n/a<br>8<br>6 ee 7 0.2 VDS max. Ai<br>0.5 VDS max.<br>5 6 0.8 VDS max.<br>SISSIES Uf<br>TN 5 nn<br>4<br>4<br>3<br>ee fff<br>3<br>2<br>2<br>1<br>1<br>ee TOE<br>0 0<br>25 50 75 100 °C 150 0 1 2 3 4 5 6 nC 8<br>T j | Q Gate|<br>AS GS<br>V<br>E -<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSV 236SP<br>-24.5<br>V<br>Pit] titi ptt cy<br>-23.5 PLT tte t<br>-23 PLT] Lyte<br>-22.5-22 PitPLEeet] teil Eyptt<br>-21.5-21 FLTPLT TiTtelyillEEylEe<br>-20.5<br>tHE<br>-20<br>“PEACE<br>-19.5-19 PIYMEDAEIL ELLE<br>-18.5-18 FLT EL ELEEEL.<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> Rev 1.5 Page 7 2011-07-14 **BSV 236SP** ## **Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2011-07-14 Rev 1.5 Page 1
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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