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BSS87H6327FTSA1
Power MOSFET, N Channel, 240 V, 260 mA, 6 ohm, SOT-89, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:260mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):3.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-89
- Drain Source Voltage Vds: 240V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 260mA
- Drain Source On State Resistance: 6ohm
- Gate Source Threshold Voltage Max: 1.2V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.187 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSS87** _**Rev. 2.0**_ ## **SIPMOS Small-Signal-Transistor** **Feature** . N-Channel . Enhancement mode, Logic Level . dv/dt rated **Product Summary** _V_ DS 240 V P| _R_ 6 | DS(on) fa _I_ D 0.26 A ff Pb-free lead plating; RoHS compliant - Qualified according to AEC Q101 - Halogenfree according to IEC61249221 **==> picture [94 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2<br>3<br>2<br>VPS05558<br>**----- End of picture text -----**<br> |**Maximum Ratings**, at _T_j= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|| |---|---|---|---| |j<br>**Parameter**|**Symbol**|**Value**|**Unit**| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D<br>pf|0.26<br>0.21<br>pf|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls|1.04|| |Reverse diode d_v_/d_t_<br>_I_S=0.26A,_V_DS=192V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs| |Gate source voltage|_V_GS<br>a|±20<br>|V| |ESDclass (JESD22-A114-HBM)|re|1A (>250V, <500V)<br>re|| |Power dissipation, related to min. footprint<br>_T_A=25°C|_P_tot|1|W| |Operating and storage temperature|_T_j ,_T_stg<br>a|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|jstg<br>a|55/150/56|| 2016-05-30 Page 1 **BSS87** _**Rev. 2.0**_ **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**| |---|---|---|---| |**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~|||| |**Characteristics**|||| ||||| |Thermal resistance, junction - case|_R_thJC<br>-<br>-<br>10||K/W| |(Pin 2)|||| ||||| |SMD version, device on PCB:|_R_thJA||| |@ min. footprint|-<br>-<br>125||| |@ 6 cm2cooling area1)|-<br>-<br>70||| ||||| |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~|||| |**Static Characteristics**|||| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=250µA<br>Gate threshold voltage,_V_GS=_V_DS<br>_I_D=108µA<br>Zero gate voltage drain current<br>_V_DS=240V,_V_GS=0,_T_j=25°C<br>_V_DS=240V,_V_GS=0,_T_j=150°C<br>Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.24A<br>Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.26A|_V_(BR)DSS<br>240<br>-<br>-<br>_V_GS(th)<br>0.8<br>1.2<br>1.8<br>_I_DSS<br>-<br>-<br>-<br>-<br>0.1<br>100<br>_I_GSS<br>-<br>-<br>10<br>_R_DS(on)<br>-<br>4.6<br>7.5<br>_R_DS(on)<br>-<br>3.9<br>6<br>|<br>|tf<br>|<br>|tt<br>tty<br>|<br>|tf<br>|<br>|<br>|<br>|<br>|tt||V<br>µA<br>nA<br>Fe| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2016-05-30 Page 2 **BSS87** _**Rev. 2.0**_ |**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**|**BSS87**<br>**_Rev. 2.02.0_**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~eo~~|||||||||||||||| |**Dynamic Characteristics**|||||||||||||||| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance||_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=0.21A<br>0.16<br>0.33<br>-<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>77.5<br>97<br>_C_oss<br>-<br>11.2<br>14<br>_C_rss<br>-<br>5.8<br>7.3<br>ft tt<br>==||||||||||||S<br>pF|| |Turn-on delay time<br>Rise time||_t_d(on)<br>_V_DD=120V,_V_GS=10V,<br>_I_D=0.28A,_R_G=6<br>-<br>3.7<br>5.5<br>_t_r<br>-<br>3.5<br>5.2<br>a||||||||||||ns|| |Turn-off delay time<br>Fall time||_t_d(off)<br>-<br>17.6<br>26.4<br>_t_f<br>-<br>27.3<br>41<br>=|||||||||||||| |**Gate Charge Characteristics**|||||||||||||||| |Gate to source charge|||_Q_gs|||_V_DD=192V,_I_D=0.26A||-||0.14||0.21|||nC| |Gate to drain charge|||_Q_gd|||||-||1.7||2.5|||| |Gate charge total|||_Q_g|||_V_DD=192V,_I_D=0.26A,||-||3.7||5.5|||| |||||||_V_GS=0 to 10V|||||||||| ||||||||||||||||| |Gate plateau voltage|||_V_(plateau)|||_V_DD=192V,_I_D= 0.26 A||-||2.7||-|||V| |**Reverse Diode**|||||||||||||||| ||||||||||||||||| |Inverse diode continuous|||_I_S||_T_A=25°C|||-||-||0.26||A|| |forward current|||||||||||||||| ||||||||||||||||| |Inv. diode direct current, pulsed|||_I_SM|||||-||-||1.04|||| |Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=_I_S|||-||0.82||1.2||V|| |Reverse recovery time|||_t_rr||_V_R=120V,_I_F=_l_S,|||-||53.6||80.4||ns|| |Reverse recovery charge|||_Q_rr||d_i_F/d_t_=100A/µs|||-||101||152||nC|| 2016-05-30 Page 3 **BSS87** ## _**Rev. 2.0**_ ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: _V_ GS > 10 V **==> picture [479 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1 0.28<br>A<br>W<br>TEL ELE EEE EL PTET TTTT<br>0.24<br>0.9<br>INET 0.22 SEE SSECEEE EEE<br>0.8 LEEN PEELE EEE 0.2 POON<br>0.7 TTELN TELE 0.18 PCOCCPOE NE<br>SEE 0.16<br>0.6<br>0.14<br>0.5<br>EE EE rea tants StaE<br>0.12<br>LUETETNUEEET<br>1 0.4 OORRREEANGEEREEE 0.1 CPPCC<br>0.3 ATTELELTEEN EELT E 0.08 GeePLETE<br>0.06<br>0.2 TENT PTT TPN<br>0.04<br>STEELE CEELEEEEELCLENE<br>0.1<br>[|] 0.02 F LA<br>0 TL [EELELEELEL] TAN [ TEN] 0 PC C C C EECCe<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>TA TA<br>tot<br>P I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C **==> picture [231 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1<br>A<br>t p = 65.0µs<br>10 0<br> 100 µs<br> 1 ms<br>10 -1<br> 10 ms<br>===... ee ee<br>10 -2<br>DC<br>10 -3 PL LTEAIE ETE TET<br>10 [0] 10 [1] 10 [2] V 10 [3]<br>V DS<br>/ I D<br>DS<br>= V<br>I D R DS(on)<br>**----- End of picture text -----**<br> ## **4 Transient thermal impedance** _Z_ thJA = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [230 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>K/W<br>10 2<br>10 1<br>D = 0.50<br>amet 202 A SU Ht<br>10 0 0.20<br>0.10<br>single pulse<br>0.05<br>10 -1 0.02<br>0.01<br>10 -2 FU CCIM AE CCNFCO<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] s 10 [4]<br>t<br>p<br>thJA<br>Z<br>**----- End of picture text -----**<br> 2016-05-30 Page 4 **BSS87** ## _**Rev. 2.0**_ ## **5 Typ. output characteristic** _I_ D = _f_ ( _V_ DS) parameter: _T_ j = 25 °C, _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on) = _f_ ( _I_ D) parameter: _T_ j = 25 °C, _V_ GS **==> picture [483 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 0.52 10<br>A 2.3V 2.9V 3.5V<br>10V ; Wf oo Sa 4.1V<br>7V 4.5V<br>0.44 6V TP EE EH 5V<br>5V 8 6V<br>0.4 4.5V i7//00RE pe bas 7V<br>0.36 4.1V 7 10V<br>3.5V ines //Aeeeeeee PEA<br>0.32 2.9V Sf 6 Foose<br>2.3V<br>0.28<br>Yi sane<br>5 tc ennmn es<br>0.24<br>1A 4<br>0.2<br>0.16 3<br>cere) | GREP<br>0.12<br>2<br>0.08<br>1<br>0.04<br>Je FEE EEE<br>0 0<br>0 0.5 1 1.5 2 2.5 3 V 4 0 0.08 0.16 0.24 0.32 0.4 A 0.52<br>V DS I D<br>DS(on)<br>I D R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D= _f_ ( _V_ GS ); _V_ DS 2 x _I_ D x _R_ DS(on)max parameter: _T_ j = 25 °C ## **8 Typ. forward transconductance** _g_ fs = f( _I_ D) parameter: _T_ j = 25 °C **==> picture [478 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> A1 0.6 |<br>S<br>0.8<br>0.7<br>| a<br>0.4<br>COC 4<br>0.6<br>0.5 cr 0.3 o<br>0.4<br>to ot 0.2 LAE<br>0.3<br>0.2<br>POPPE ART EE<br>0.1<br>COCA<br>0.1<br>cree LL EE<br>0 0<br>0 0.8 1.6 2.4 3.2 V 4.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1<br>V GS I D<br>fs<br>I D g<br>**----- End of picture text -----**<br> 2016-05-30 Page 5 **BSS87** ## _**Rev. 2.0**_ ## **9 Drain-source on-state resistance** ## **10 Typ. gate threshold voltage** _R_ DS(on) = _f_ ( _T_ j) ## _V_ GS(th) = _f_ ( _T_ j) parameter : _I_ D = 0.26 A, _V_ GS = 10 V parameter: _V_ GS = _V_ DS; _I_ D =108µA **==> picture [227 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>V TRL | | | |<br>~,<br>98%<br>ft] ) Tp ; aaa<br>1.6 Saaeeeeene<br>1.4<br><a<br>PN] typ. py |<br>1.2<br>=<br>1<br>Oy ET KL ETI<br>- So<br>2%<br>0.8<br>| ><br>0.6<br>.<br>OE<br>0.4<br>-60 -20 20 60 100 °C 160<br>T<br>—_P r j<br>12 Forward character. of reverse diode<br>F = = f (VSD)SD))<br>parameter: T<br>j<br>10 1<br>A [ft | ft Py yt<br>rt tt; | TT ttt EE<br>FLEE ELEL ELLE ELEL ELLE ELLE Ef<br>10 0<br>BRRRRRRRRRRREEE<br>=. >><br>Lt | TAFT | Tet<br>ptt te | PA tT tt tt<br>10 -1 tEThfEThfhff<br>T j = 25 °C typ = 25 °C typ<br>LSe|Se|| [PATE T j = 150 °C typ = 150 °C typ [===[|===[|[| |<br>eli T j = 25 °C (98%) = 25 °C (98%) [| ty]<br>T j = 150 °C (98%) = 150 °C (98%)<br>10 -2 ts TH<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>— V SD<br>GS(th)<br>V<br>I F<br>**----- End of picture text -----**<br> **==> picture [265 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> os 30 ee<br>PELE<br>24<br>-ELELLEEELL LL<br>PELE ELL<br>22<br>20<br>SS000e0ee000<br>18<br>PELE<br>16<br>SEPP EEE<br>14 ~ELEELEEELLE EL<br>12<br>Pee<br>10<br>PELE LL<br>8 98%<br>Ser ee<br>6<br>4 typ<br>ppt eer eT<br>2<br>Pe?LELLELELLEL<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>—_ j<br>DS(on)<br>R V<br>**----- End of picture text -----**<br> ## **12 Forward character. of reverse diode** ## **11 Typ. capacitances** _C_ = _f_ ( _V_ DS) ## _I_ F = = _f_ (VSD)SD)) parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C parameter: _T_ j **==> picture [474 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 10 1<br>===52=======—NN====2==2=======<br>pF a eG GO A [ft | ft Py yt<br>ee ee rt tt; | TT ttt EE<br>NESS FLEE ELEL ELLE ELEL ELLE ELLE Ef<br>C iss<br>10 2 10 0<br>MEET EEE BRRRRRRRRRRREEE<br>== =. >><br>fr Mm fT fT Lt | TAFT | Tet<br>ee ptt te | PA tT tt tt<br>C oss<br>f 10 1 ASSECETPCASES 10 -1 tEThfEThfhff<br>C rss T j = 25 °C typ = 25 °C typ<br>aae LSe|Se|| [PATE T j = 150 °C typ = 150 °C typ [===[|===[|[| |<br>a eli T j = 25 °C (98%) = 25 °C (98%) [| ty]<br>T j = 150 °C (98%) = 150 °C (98%)<br>10 0 Coe 10 -2 ts TH<br>0 6 12 18 24 V 36 0 0.4 0.8 1.2 1.6 2 2.4 V<br>— V DS — V SD<br>C I F<br>**----- End of picture text -----**<br> 2016-05-30 Page 6 **BSS87** ## _**Rev. 2.0**_ **==> picture [484 x 323] intentionally omitted <==** **----- Start of picture text -----**<br> 13 Typ. gate charge 14 Drain-source breakdown voltage<br>V GS = f ( Q G); parameter: V DS , V (BR)DSS = f ( T j)<br>I D = 0.26 A pulsed, T j = 25 °C<br>16 = 291V<br>V =io rrcoe<br>276<br>EEE<br>12<br>271<br>ECE FH<br>266<br>10<br>261<br>Efof<br>8 0.2 V DS max ff 256<br>ie<br>251<br>0.5 V DS max<br>246<br>6 0.8 V DS max , [Hn]<br>241<br>236<br>4<br>231<br>2 tL [fe] 226<br>221<br>rf pfeHioae; [a] [a] aceueaiH [y] a cH nt tiecoe<br>0 216<br>0 1 2 3 4 nC 6 -60 -20 20 60 100 °C 180<br>aie Q G T j<br>GS (BR)DSS<br>V V<br>**----- End of picture text -----**<br> 2016-05-30 Page 7 **BSS87** _**Rev. 2.0**_ ## **Package Outline SOT-89** ## **Footprint** Soldering type: Reflow soldering ## **Tape and Reel** Dimensions in mm 2016-05-30 Page 8 **BSS87** ## BSS87 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2016-06-09|Release of final version| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** 9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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