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BSS84WQ-7-F
Power MOSFET, P Channel, 50 V, 164 mA, 3.1 ohm, SOT-323, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 330mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 5V
- Transistor Case Style: SOT-323
- Drain Source Voltage Vds: 50V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 164mA
- Drain Source On State Resistance: 3.1ohm
- Gate Source Threshold Voltage Max: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.042 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSS84WQ** TT
## **50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR**
## **Product Summary**
|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|---|---|---|
|-50V|10Ω@VGS= -5V|-164mA|
## **Features and Benefits**
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
## **Description and Applications**
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- **The BSS84WQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.**
- **https://www.diodes.com/quality/product-definitions/**
- General Purpose Interfacing Switch
- Power Management Functions
- Analog Switch
## **Mechanical Data**
- Case: SOT323
- Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). **e3**
- Weight: 0.006 grams (Approximate)
**==> picture [412 x 142] intentionally omitted <==**
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SOT323 D<br>D<br>G<br>*© G S<br>S<br>Top View Equivalent Circuit Top View<br> Information (Note 4)<br>Part Number Case Packaging<br>BSS84WQ-7-F SOT323 3,000 / Tape & Reel<br>**----- End of picture text -----**<br>
## **Ordering Information** (Note 4)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
**SOT323**
K84 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September)
|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**2030**<br>**2031**<br>**Code**<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>R<br>S<br>T<br>~~[/|~~<br>~~— | —~~<br>~~+ —-_ -S~~|
|---|---|---|---|---|---|---|---|
|**Month**<br>**Jan**<br>**Feb**<br>**Code**<br>1<br>2<br>~~ee~~|**Mar**<br>3|**Apr**<br>4|**May**<br>**Jun**<br>5<br>6|**Jul**<br>7|**Aug**<br>**Sep**<br>8<br>9|**Oct**<br>O|**Nov**<br>**Dec**<br>N<br>D|
|BSS84WQ|||1 of 7||||August 2020|
|Document number: DS43027 Rev. 2 - 2|||**www.diodes.com**|**www.diodes.com**|||© Diodes Incorporated|
BSS84WQ Document number: DS43027 Rev. 2 - 2
August 2020 © Diodes Incorporated
**BSS84WQ**
## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-50|V|
|Gate-Source Voltage|||VGSS|20|V|
|Continuous Drain Current (Note 6) VGS= -5V|Steady<br>State|TA= +25℃<br>TA= +70℃|ID|-164<br>-131|mA|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|-164|mA|
|Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) (Note 6)|||IDM|-800|mA|
## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)
|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)||PD|330|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|388|°C/W|
|Total Power Dissipation (Note 6)||PD|410|mW|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|307|°C/W|
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|
## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)
|~~IIDIDI~~<br>~~OU~~|~~IIDIDI~~<br>~~OU~~|~~IIDIDI~~<br>~~OU~~|~~IIDIDI~~<br>~~OU~~|~~IIDIDI~~<br>~~OU~~|~~IIDIDI~~<br>~~OU~~|~~IIDIDI~~<br>~~OU~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~IS~~|**Symbol**<br>~~IS~~<br>~~IID~~|**mbol**<br>**Min**<br>~~IS~~<br>~~ID~~|**Typ**<br>~~IS~~<br>~~I~~|**Max**<br>~~IS~~<br>~~OU~~|**Unit**<br>~~IS~~<br>~~OU~~|**Test Condition**<br>~~IS~~|
|**OFF CHARACTERISTICS(Note 7)**<br>~~IS~~<br>~~IID ID I~~<br>~~OU~~<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-50<br>~~ee~~|-75<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250µA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~<br>~~St~~|<br><br><br>~~ee~~<br>~~nn~~|<br><br><br>~~ee~~<br>~~In~~|-1<br>-2<br>-100<br>~~ee~~<br>~~I~~|µA<br>µA<br>nA<br>~~ee~~|VDS= -50V, VGS= 0V, TJ= +25°C<br>VDS= -50V, VGS= 0V, TJ= +125°C<br>VDS= -25V,VGS= 0V,TJ= +25°C<br>~~ee~~|
|Gate-Body Leakage<br>~~I~~|IGSS<br>~~I~~<br>~~St~~|<br>~~I~~<br>~~nn~~|<br>~~I~~<br>~~In~~|10<br>~~I~~<br>~~I~~|nA<br>~~I~~|VGS=20V, VDS= 0V<br>~~I~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~I~~<br>~~St~~<br>~~nn In I~~<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~<br>~~ts~~|-0.8<br>~~ee~~<br>~~ts~~|-1.6<br>~~ee~~<br>~~tts~~|-2.0<br>~~ee~~<br>~~ts Os~~|V<br>~~ee~~<br>~~Os~~|VDS= VGS, ID= -1mA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~<br>~~tr~~|RDS(ON)<br>~~ee~~<br>~~tr~~<br>~~ts~~<br>~~rrr~~|<br>~~ee~~<br>~~tr~~<br>~~ts~~<br>~~rs~~|3.1<br>~~ee~~<br>~~tr~~<br>~~tts~~<br>~~es~~|10<br>~~ee~~<br>~~tr~~<br>~~ts Os~~<br>~~ts~~|Ω<br>~~ee~~<br>~~tr~~<br>~~Os~~<br>~~ns~~|VGS= -5V, ID= -0.1A<br>~~ee~~<br>~~tr~~|
|Forward Transconductance<br>~~nr~~|gFS<br>~~ts ~~<br>~~nr~~<br>~~rrr~~|0.05<br> ~~ts ~~<br>~~nr~~<br>~~rs~~|<br> ~~tts ~~<br>~~nr~~<br>~~es~~|<br> ~~ts Os~~<br>~~nr~~<br>~~ts~~|S<br>~~Os~~<br>~~nr~~<br>~~ns~~|VDS= -25V,ID= -0.1A<br>~~nr~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~rrr~~<br>~~rs~~<br>~~es~~<br>~~ts~~<br>~~ns~~<br>~~SsGe~~<br>~~es~~<br>~~es~~<br>~~ne~~|||||||
|Input Capacitance<br>~~es~~<br>~~es~~|Ciss<br>~~es~~|<br>~~es~~<br>~~Ss~~|<br>~~es~~<br>~~Ge~~|45<br>~~es~~<br>~~es~~|pF<br>~~es~~<br>~~ne~~|VDS= -25V, VGS= 0V, f = 1.0MHz<br>~~ne~~|
|Output Capacitance<br>~~es~~|Coss|<br>~~Ss~~|<br>~~Ge~~|25<br>~~es~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~es~~|Crss|<br>~~Ss~~|<br>~~Ge~~|12<br>~~es~~<br>~~ee~~|pF<br>~~ne~~<br>~~ee~~||
|**SWITCHING CHARACTERISTICS(Note 8)**<br>~~SsGe~~<br>~~es~~<br>~~es~~<br>~~ne~~<br>~~ee~~<br>~~ee~~|||||||
|Turn-On Delay Time<br>~~ee~~|tD(ON)<br>~~ee~~|<br>~~ee~~|10<br>~~ee~~|<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= -30V, ID= -0.27A,<br>RGEN= 50Ω, VGS= -10V<br>~~ee~~|
|Turn-Off Delay Time<br>~~ee~~|tD(OFF)<br>~~ee~~|<br>~~ee~~|18<br>~~ee~~|<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design. Not subject to production testing.
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BSS84WQ Document number: DS43027 Rev. 2 - 2
August 2020 © Diodes Incorporated
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BSS84WQ<br>0.8 0.6<br>VGS = -10V VDS = -5V TJ = 150℃<br>VGS = -5.0V VGS = -4.5V 0.5 TJ = 85℃ TJ = 125℃<br>0.6 TJ = 25℃<br>0.4 TJ = -55℃<br>VGS = -3.5V<br>aa ff<br>0.4 0.3<br>fe | fo<br>VGS = -3.0V 0.2<br>0.2 fy — fe<br>VGS = -2.5V 0.1<br>b s Oe<br>VGS = -2.0V<br>0.0 L-—— —_ 0 s/s<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6<br>0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>Figure 1. Typical Output Characteristic<br>6 10<br>VGS = -5V 9<br>5.5 ee FIC COCOoOoOoOo<br>8<br>5<br>a 7 AIEEE ECE<br>4.54 oYOK 65 iPTT<br>ID = -100mA<br>4<br>3.5<br>a 3 ANSEL<br>3<br>2<br>2.5 ne 1 aes<br>2 ee 0 CEE ECELELo<br>0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>12 2<br>11 VGS = -5V<br>10 ———E 1.8 PLE EEE<br>9<br>ee TJ = 150℃ 2 1.6 CCE ET<br>8<br>TJ = 125℃<br>7 TJ = 85℃ 1.4 VGS = -5V, ID = -100mA<br>6<br>5 i es 1.2 ca e<br>—— —_ —- Lo<br>4<br>3 TJ = 25℃ 1<br>———— EEEZeanee<br>2<br>TJ = -55℃ 0.8<br>1 — ppt<br>0 a 0.6 ZARtt<br>0 0.2 0.4 0.6 0.8<br>-50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction<br>Temperature Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) ID<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>
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BSS84WQ Document number: DS43027 Rev. 2 - 2
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**BSS84WQ**
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6 2<br>5.5<br>“TELL 1.8 ry TTT<br>5 ID = -1mA<br>a ==<br>4.5<br>TTT 1.6 |—— ff<br>4 VGS = -5V, ID = -100mA<br>3.5 ae ZO 1.4 ——~_|) PEEL<br>3 ID = -250μA<br>Po e W e<br>1.2<br>2.5 eT SS S<br>2<br>pr 1 tt e=<br>1.5 FEE} EL<br>1 COTTE 0.8 COE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs. Junction<br>Temperature Temperature<br>0.8 1000<br>f = 1MHz<br>0.6 |i ee== =<br>100<br>e e<br>Ciss<br>0.4 ———— ——<br>TJ = 150 [o] C 10 Coss<br>TJ = 125 [o] C<br>0.2 f If PO S e<br>TJ = 85 [o] C<br>TU —— EE<br>TJ = 25 [o] C | Crss ee eee<br>TJ = -55 [o] C<br>yy | =<br>0 LL!) 1 es<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>1<br>R<br>DS(ON)<br>Limited<br>PU NUNN TT<br>PE RN AT |<br>0.1<br>| | dat PW = 100µs YA) SKN DAT<br>PW = 1ms<br>Pye PW = 10ms OSS SN<br>0.01 PW = 100ms<br>TJ(Max) = 150 ℃ PW = 1s<br>TA = 25 ℃ PW = 10s<br>Single Pulse ect DC AEE<br>DUT on 1*MRP ee<br>Board<br>VGS = -5V<br>0.001 Pa Ci<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)CJ<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>
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BSS84WQ Document number: DS43027 Rev. 2 - 2
August 2020 © Diodes Incorporated
**BSS84WQ**
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**----- Start of picture text -----**<br>
1<br>| a up ss e/g soe SS ns a A GO<br>EEE<br>Se D = 0.7 e [aaa] NMen ee<br>rT<br>D = 0.5<br>Fy nf CEE CIEL NTNpA TTI TT TTT<br>D = 0.3 Te/ TT TTT<br>ET D = 0.9 ET<br>0.1 eee Hf<br>D = 0.1 HEH<br>EEE ee<br>ec _ l|<br>cete |<br>Fy D = 0.05 ry EHNA LITT E TTT TTT<br>ee a ee<br>ee LIE ETAT ETE VEE ETTTEETTNT T<br>0.01 peSM DYMTV TTIE CVIIE ELI UVIIE ELITE ELIE] TIE ET<br>EEA AA A SEE E E EEE EAH EH<br>ERTS E D = 0.02<br>| eri FN TP T TTHH<br>eT LT D = 0.01 TL TT TTT<br>| | | ar D = 0.005 HET IE TI ETE RθJA (t) = r(t) * RθJA nil<br>D = Single Pulse RθJA = 388℃/W<br>ai 1 0 0 Duty Cycle, D = t1/t2 i<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>
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BSS84WQ Document number: DS43027 Rev. 2 - 2
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**BSS84WQ**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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SOT323<br>**----- End of picture text -----**<br>
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D<br>SOT323<br>A2 Dim Min Max Typ<br>A1 0.00 0.10 0.05<br>A1 e c JO, L a GEG A2 b 00..2905 1.0.4000 00..9530<br>c 0.10 0.18 0.11<br>b D 1.80 2.20 2.15<br>E 2.00 2.20 2.10<br>E1 1.15 1.35 1.30<br>e 0.650 BSC<br>e1 1.20 1.40 1.30<br>F 0.375 0.475 0.425<br>E E1<br>L 0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>F e1<br>aaa ——<br>**----- End of picture text -----**<br>
## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**SOT323**
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X<br>Y Value<br>Dimensions<br>(in mm)<br>C 0.650<br>G 1.300<br>Y1 G X 0.470<br>Y 0.600<br>i = Y1 2.500<br>C<br>e l l fu ——f —<br>**----- End of picture text -----**<br>
6 of 7 **www.diodes.com**
BSS84WQ Document number: DS43027 Rev. 2 - 2
August 2020 © Diodes Incorporated
**BSS84WQ**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
**www.diodes.com**
7 of 7 **www.diodes.com**
BSS84WQ Document number: DS43027 Rev. 2 - 2
August 2020 © Diodes Incorporated
Updated at June 5, 2026
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