BSS84Q-7-F

**BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) max**|**ID**<br>TA= +25°C|
|---|---|---|
|-50V|10 @VGS= -5V|-130mA|



## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The BSS84Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

- Analog Switch 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish (Lead Free Plating) Solderable per MIL-STD-202, Method 208 **e3** 

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 Terminal Connections: See Diagram<br> Weight: 0.009 grams (Approximate)<br>SOT23<br>D<br>D<br>G<br>G S<br>&)<br>S<br>Top View  Equivalent Circuit  Top View<br>**----- End of picture text -----**<br>


Top View 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|BSS84-7-F|Commercial|SOT23|3000/Tape & Reel|
|BSS84Q-7-F|Automotive|SOT23|3000/Tape &Reel|
|BSS84-13-F|Commercial|SOT23|10000/Tape &Reel|
|BSS84Q-13-F|Automotive|SOT23|10000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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K84 = Product Type Marking Code<br>YM or YM= Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 1998  ~  2016 2017 2018 2019 2020 2021 2022 2023<br>{tt Code J  ~  D  E  F  G  H  I  J  K<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3  4  5  6  7  8  9  O  N  D<br>{ff $$ $$ —  —  —  —  —} —<br>BSS84 1 of 6  October 2019<br>Document number: DS30149  Rev. 23 - 2 www.diodes.com  © Diodes Incorporated<br>**----- End of picture text -----**<br>


**BSS84** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|-50|V|
|Drain-Gate Voltage RGS 20k|VDGR|-50|V|
|Gate-Source Voltage<br>Continuous|VGSS|±20|V|
|Drain Current(Note 5)<br>Continuous|ID|-130|mA|
|Pulsed Drain Current|IDM|-1.2|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|300|mW|
|Thermal Resistance,Junction to Ambient|RJA|417|C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_—_———————————~~|**Symbol**<br>~~_—_———————————~~|**Min**<br>~~_—_———————————~~|**Typ**<br>~~_—_———————————~~|**Max**<br>~~_—_———————————~~|**Unit**<br>~~_—_———————————~~|**Test Condition**<br>~~_—_———————————~~|
|**OFF CHARACTERISTICS(Note 6)**<br>~~_—_———————————~~|||||||
|Drain-Source Breakdown Voltage<br>~~_—_———————————~~|BVDSS<br>~~_—_———————————~~|-50<br>~~_—_———————————~~|<br>~~_—_———————————~~|<br>~~_—_———————————~~|V<br>~~_—_———————————~~|VGS= 0V,ID= -250µA<br>~~_—_———————————~~|
|Zero Gate Voltage Drain Current<br>~~at~~|IDSS<br>~~at~~|<br><br><br>~~at~~|<br><br><br>~~at~~|-1<br>-2<br>-100<br>~~at~~|µA<br>µA<br>nA<br>~~at~~|VDS= -50V, VGS= 0V, TJ= +25°C<br>VDS= -50V, VGS= 0V, TJ= +125°C<br>VDS= -25V,VGS= 0V,TJ= +25°C<br>~~at~~|
|Gate-BodyLeakage<br>~~at~~|IGSS<br>~~at~~|<br>~~at~~|<br>~~at~~|±10<br>~~at~~|nA<br>~~at~~|VGS= ±20V,VDS= 0V<br>~~at~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~es~~|||||||
|Gate Threshold Voltage<br>~~es~~|VGS(TH)<br>~~es~~|-0.8<br>~~es~~|<br>~~es~~|-2.0<br>~~es~~|V<br>~~es~~|VDS= VGS,ID= -1mA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~—_———~~|RDS(ON)<br>~~—_———~~|<br>~~—_———~~|<br>~~—_———~~|10<br>~~—_———~~|<br>~~—_———~~|VGS= -5V,ID= -0.100A<br>~~—_———~~|
|Forward Transconductance<br>~~—_———~~|gFS<br>~~—_———~~|0.05<br>~~—_———~~|<br>~~—_———~~|<br>~~—_———~~|S<br>~~—_———~~|VDS= -25V,ID= -0.1A<br>~~—_———~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|24.6<br>~~ee~~|45<br>~~ee~~|pF<br>~~ee~~|VDS= -25V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Output Capacitance|Coss||4.7|25|pF||
|Reverse Transfer Capacitance|Crss||2.8|12|pF||
|Gate Resistance<br>~~—<—<—~~|Rg||916||<br>~~ee~~|VDS= 0V,VGS = 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~—<—<—~~|Qg||0.28||nC<br>~~ee~~|VDS= -10V, ID= -0.1A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~—<—<—~~|Qg||0.59||nC<br>~~ee~~||
|Gate-Source Charge<br>~~—<—<—~~|Qgs|<br>~~ee~~|0.09<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Gate-Drain Charge<br>~~—<—<—~~|Qgd|<br>~~ee~~|0.08<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~—<—<—~~<br>~~——————~~|tD(ON)<br>~~——————~~|<br>~~——————~~<br>~~ee~~|10<br>~~——————~~<br>~~ee~~|<br>~~——————~~<br>~~ee~~|ns<br>~~ee~~<br>~~——————~~<br>~~ee~~|VDD= -30V, ID= -0.27A,<br>RGEN= 50,VGS= -10V<br>~~ee~~<br>~~——————~~|
|Turn-Off DelayTime<br>~~——————~~|tD(OFF)<br>~~——————~~|<br>~~——————~~<br>~~ee~~|18<br>~~——————~~<br>~~ee~~|<br>~~——————~~<br>~~ee~~|ns<br>~~——————~~<br>~~ee~~||



Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found on our website at http://www.diodes.com/package-outlines.html. 

6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to production testing. 

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400 -600<br>350<br>TEE TT -500 cee<br>300 cReeceee TT TT] L T<br>-400<br>250<br>ENE SS EET ee<br>200 -300<br>TERE EE TL Arwo<br>150<br>COAST) -200 eer<br>100<br>et ETN ET -100 fo<br>50<br>et} ty IN | TY a o a<br>0 PEPE N 0 aannne<br>0 25 50 75 100 125 150 175 200 0 -1 -2 -3 -4 -5<br>TA, AMBIENT TEMPERATURE ( ( °C) 癈 ) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1 Max Power Dissipation vs. Ambient Temperature Fig. 2 Drain-Source Current vs. Drain-Source Voltage<br>-1.0 10<br>9<br>-0.8 TAT 8 CPO<br>) 7 CE<br>-0.6 Tegal) 6 EERREEEEE<br>CML CAPE<br>5<br>-0.4 TTT fie) 4 EOP<br>I TA<br>3<br>-0.2 2<br>yi COCR TA = 125°C<br>THAT) = 1 eR<br>TA = 25°C<br>0.0 TAI) 0 CECT EESSEE<br>0 -1 -2 -3 -4 -5 -6 -7 -8 0 -1 -2 -3 -4 -5<br>VGS / , GATE-SOURCE VOLTAGE (V) = EEEPSEESE VGS, GATE-SOURCE (V)<br>Fig. 3 Drain-Current vs. Gate-Source Voltage Fig. 4 On-Resistance vs. Gate-Source Voltage<br>15 25.0<br>VGS = -10V<br>ID = -0.13A<br>12 20.0 UAL<br>15.0<br>9<br>6 10.0 [ array a, Ves= 8V<br>3 5.0<br>0 0.0<br>-50 -25 0 25 50 75 100 125 150 0.0 -0.2 -0.4 -0.6 -0.8 -1.0<br>TJ, JUNCTION TEMPERATURE ( ( °C) 癈 ) ID, DRAIN-CURRENT (A)<br>Fig. 5 On-Resistance vs. Junction Temperature Fig. 6 On-Resistance vs. Drain-Current<br>, DRAIN-SOURCE CURRENT (mA)<br>ID<br>)<br>, ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>ON-RESISTANCE (<br>, NORMALIZED DRAIN-SOURCE<br>DS(ON)<br>R<br>, POWER DISSIPATION (mW)<br>D<br>P<br>DS(ON)<br>)<br>, ON-RESISTANCE (<br>R<br>, DRAIN-CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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100<br>f = 1MHz<br>es ee ee ee |<br>p o<br>Ff + +<br>pf fT Ciss  ft<br>—————<br>10 Via<br>Coss<br>e \ | Sre ee ee<br>Ne<br>Crss<br>1 CCL SEE<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 7 Typical Junction Capacitance<br>10<br>RDS(ON)<br>Limited  TTT an<br>eee ee PW = 100µs<br>1 PW = 1ms<br>PW = 10ms<br>IRN ORES TT<br>0.1<br>PW = 100ms<br>Se ORNS anil<br>0.01 Pa TTJ(Max) C = 25= 150 ℃ ℃ OSA PW = 1s  NTT<br>Single Pulse DUT on 1*MRP  fT TTT PW = 10s  im<br>Board  DC<br>VGS = -10V<br>0.001 Seenalll Laic<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>9<br>P| | hE | LY]<br>8 ee<br>VA ae<br>7<br>PT | | UY<br>6<br>5 es<br>4 P| [A | ft<br>3<br>VDS = -10V, ID = -0.1A<br>2<br>1<br>0 ACE<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>Qg (nC)<br>Fig. 8 Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT23<br>**----- End of picture text -----**<br>


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All 7°<br>H<br>GAUGE PLANE SOT23<br>J 0.25 Dim  Min  Max  Typ<br>K1 o K fe—— iF a A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>a C  2.30  2.50  2.40<br>- A tf M f h e+} D  0.89  1.03  0.915<br>gerd 7  ae L L1 —t_ F  0.45  0.60  0.535  44<br>G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>=== J  0.013 0.10 0.05<br>C B<br>K  0.890 1.00 0.975<br>K1  0.903 1.10 1.025<br>L  0.45 0.61  0.55<br>aPy ===>es ee<br>D L1  0.25  0.55  0.40<br>M  0.085 0.150 0.110<br>F G<br>Te ao a  0°  8°  --<br>| [rrrrrr—s] All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT23<br>Y Dimensions  Value (in mm)<br>C  2.0<br>X  0.8<br>X1  1.35<br>Y1 8 C<br>Y  0.9<br>oe| Y1  2.9<br>ro X Ld X1<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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