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BSS84PWH6327XTSA1
Power MOSFET, P Channel, 60 V, 150 mA, 8 ohm, SOT-323, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-150mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):4.6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-323
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 150mA
- Drain Source On State Resistance: 8ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.029 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSS84PW** ## **SIPMOS**[] **Small-Signal-Transistor** ## **Features** ## **Product Summary** **==> picture [491 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |P-Channel|Drain source voltage|VDS|-60|V| |Enhancement mode|Drain-source on-state resistance|R|8|W| |DS(on)| |Avalanche rated|Continuous drain current|ID|-0.15|A| |Logic Level|3| |dv/dt rated| |2| |•|Qualified according to AEC Q101| |¢ Pb-free lead plating; ROHS compliant|“|SEL|1| |VSO05561| |•|Halogen-free according to IEC61249-2-21| |Type|Package|Tape and Reel|Marking|Pin 1|PIN 2|PIN 3| |BSS84PW|PG-|SOT-323|H6327:3000pcs/r.|YBs|G|S|D| **----- End of picture text -----**<br> **==> picture [484 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Maximum Ratings|,at Tj = 25 °C, unless otherwise specified| |Parameter|Symbol|Value|Unit| |Continuous drain current|I|-0.15|A| |D| |TA = 25 °C| |pf| |Pulsed drain current|I|-0.6| |D puls| |TA = 25 °C| |Avalanche energy, single pulse|EAS|2.61|mJ| |ID = -0.15 A , VDD = -25 V, RGS = 25 W| |Avalanche energy, periodic limited by Tjmax|EAR|0.03| |Reverse diode dv/dt|dv/dt|6|kV/µs| |IS = -0.15 A, VDS = -48 V, di/dt = 200 A/µs,| |T|= 150 °C| |jmax| |P]| |Gate source voltage|VGS|±20|V| |Power dissipation|Ptot|0.3|W| |TA = 25 °C| |ef| |Operating and storage temperature|a|Tj , Tstg|-55...+150|°C| |IEC climatic category; DIN IEC 68-1|55/150/56| |ESD Class| |Class 0| |JESF22-A114-HBM| |fp| **----- End of picture text -----**<br> 20 16 - 06 - 21 Rev 2.0 Page 1 |**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~|**BSS84PW**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Gafineon~~oe~~| |---|---|---|---|---|---|---|---|---|---|---| |**Characteristics**||||||||||| |||||||||||| |Thermal resistance, junction - soldering point||RthJS||-||-||110||K/W| |(Pin 3)||||||||||| |||||||||||| |SMD version, device on PCB:||RthJA||||||||| |@ min. footprint||||-||-||420||| |@ 6 cm2cooling area1)||||-||-||350||| **Electrical Characteristics** , at Tj = 25 °C, unless otherwise specified |Drain-source breakdown voltage<br>VGS= 0 V,ID= -250 µA|V(BR)DSS<br>po}|-60<br>po}tf|-<br>tf|-<br>tf|V| |---|---|---|---|---|---| |Gate threshold voltage,VGS=VDS<br>ID= -20 µA|VGS(th)<br>po}<br>||-1<br>po} tf<br> tf|-1.5<br>tf<br>tf|-2<br>tf<br>tf|| |Zero gate voltage drain current<br>VDS= -60 V,VGS= 0 V,Tj= 25 °C<br>VDS= -60 V,VGS= 0 V,Tj= 125 °C|IDSS<br>tty<br>pf}|-<br>-<br>tty<br>pf}tt|-0.1<br>-10<br>tty<br>tt|-1<br>-100<br>tty<br>tt|µA| |Gate-source leakage current<br>VGS= -20 V,VDS= 0 V|IGSS<br>pf}<br>pf}|-<br>pf}tt<br>pf}tt|-10<br>tt<br>tt|-100<br>tt<br>tt|nA| |Drain-source on-state resistance<br>VGS= -2.7 V,ID= -0.01 A|RDS(on)<br>pf}<br>pf}|-<br>pf} tt<br>pf}tt|10.5<br>tt<br>tt|25<br>tt<br>tt|W| |Drain-source on-state resistance<br>VGS= -4.5 V,ID= -0.12 A|RDS(on)<br>pf}<br>||-<br>pf} tt<br> tf|6.9<br>tt<br>tf|12<br>tt<br>tf|| |Drain-source on-state resistance<br>VGS= -10 V,ID= -0.15 A|RDS(on)<br>||-<br> tt|4.6<br>tt|8<br>tt|| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 20 16 - 06 - 21 Rev 2.0 Page 2 **BSS84PW** |**Electrical Characteristics**, at<br>**Parameter**<br>**Dynamic Characteristics**<br>~~ee ~~|Tj= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br> ~~see~~|Tj= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br> ~~see~~|Tj= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br> ~~see~~|Tj= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br> ~~see~~|Tj= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br> ~~see~~|Tj= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br> ~~see~~|**Values**<br>**typ.**|**Values**<br>**typ.**|**Values**<br>**typ.**|**max.**||**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|gfs<br>VDS 2*ID*RDS(on)max,<br>ID=0.15A<br>0.08<br>0.16<br>-<br>Ciss<br>VGS=0V,VDS=-25V,<br>f=1MHz<br>-<br>15.3<br>19.1<br>Coss<br>-<br>5.8<br>7.3<br>Crss<br>-<br>3<br>3.8<br>td(on)<br>VDD=-30V,VGS=-4.5V,<br>ID=-0.12A,RG=25W<br>-<br>6.7<br>10<br>tr<br>-<br>16.2<br>24.3<br>td(off)<br>-<br>8.6<br>12.9<br>tf<br>-<br>20.5<br>30.8<br>jtft<br>===><br>=<br>=e<br>ee|||||||||||S<br>pF<br>ns| |**Gate Charge Characteristics**||||||||||||| |||||||||||||| |Gate to source charge||Qgs||VDD=-48V,ID=-0.15A||-||0.25||0.38||nC| |Gate to drain charge||Qgd||||-||0.3||0.45||| |Gate charge total||Qg||VDD=-48V,ID=-0.15A,||-||1||1.5||| |||||VGS=0 to -10V||||||||| |||||||||||||| |Gate plateau voltage||V(plateau)||VDD=-48V,ID=-0.15A||-||-3.4||-||V| |**Reverse Diode**||||||||||||| |||||||||||||| |Inverse diode continuous||IS||TA=25°C||-||-||-0.15||A| |forward current||||||||||||| |||||||||||||| |Inverse diode direct current,||ISM||||-||-||-0.6||| |pulsed||||||||||||| |||||||||||||| |Inverse diode forward voltage||VSD||VGS=0V,IF=-0.15A||-||-0.84||-1.12||V| |Reverse recovery time||trr||VR=-30V,IF=lS,||-||23.6||35.4||ns| |Reverse recovery charge||Qrr||diF/dt=100A/µs||-||11.6||17.4||nC| 20 16 - 06 - 21 Rev 2.0 Page 3 **BSS84PW** ## **Power Dissipation** ## Ptot = f (TA) ## **Drain current** ID = f (TA) parameter: VGS 10 V > **==> picture [479 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> BSS84PW BSS84PW<br>0.32 COCO -0.16 C OT<br>W FERC A FTDSIEEEEEEEEL<br>PEENCLELECCC LL<br>0.24 FEEERNELELECCCCPEEEPRCCECECCC -0.12 COEEESSELEEEELLPOCPCCEEEEENSEC NEEL<br>0.20 CCC EEE -0.10 SCREENS<br>PEEEEOKELCCCC CECE<br>FECES CCC PORE<br>0.16 FEEEEEEENCLELCC -0.08 CCRC NLL<br>-EEEEELE ENE FECEEEEELE EEN<br>0.12 PREECE NCCC -0.06 PEELE<br>PCEEEEEEE<br>0.08 CCE -0.04 NLL<br>PEEL PCEEEEEEE E EEEEANL L<br>FEEL NC PCEEEEEEEEE LN<br>0.04 FEEEEEEEECCCCNC -0.02 PCE<br>PEEEECCCCCCCEN PEEP<br>0.00 0.00<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>—_— TA — TA<br>tot<br>P ID<br>**----- End of picture text -----**<br> ## **Safe operating area** ID = f ( VDS ) ## parameter : D = 0 , TA = 25 °C **==> picture [235 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> -10 1 BSS84PW<br>A<br>rT TTT TTT<br>-10 0 ST<br>tp = 40.0µs<br>oe o e<br> 100 µs<br>4 N 1 ms<br>-1<br>-10 LE CARTENY| 10 ms<br>A NY<br>PS S<br>-10 -2<br>DC<br>EHH EHH it<br>YT TTT EET ETT<br>-10 -3 C C<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ]<br>—> VDS<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>D<br>I<br>**----- End of picture text -----**<br> ## **Transient thermal impedance** ZthJA = f (tp) parameter : D = tp/T **==> picture [232 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> BSS84PW<br>10 3<br>a a a a|<br>K/W HEE<br>10 2 TATE TIT La TTI<br>Sih 200an! antl7aWiad wt<br>D = 0.50<br>Pies 0.20<br>10 1 0.10<br>TT A il<br>0.05<br>0.02<br>single pulse 0.01<br>FAM cw ICC C<br>7<br>10 0 ATTA A<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] s 10 [3 ]<br>—> tp<br>thJC<br>Z<br>**----- End of picture text -----**<br> 20 16 - 06 - 21 Rev 2.0 Page 4 **BSS84PW** ## **Typ. output characteristic** ## **Typ. drain-source-on-resistance** ID = f (VDS); Tj=25°C ## RDS(on) = f (ID) parameter: VGS ## parameter: tp = 80 µs **==> picture [485 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> BSS84PW BSS84PW<br>-0.36 Ptot = 0W 26<br>W a b c d<br>A<br>PRESSR g f EEEEEFA e EE VGS [V] 22 erect|<br>a -2.5<br>-0.28 b -3.0 20<br>c -3.5<br>d 18<br>-0.24 d -4.0<br>Se /Seeeaee e -4.5 N ii 16 ossstssaltt<br>f -5.0<br>-0.20 g -6.0 14<br>-0.16 Fs TT c 12 SERVE CEE<br>10<br>| | [fe [XE LL<br>-0.12 Pe te<br>8<br>-0.08 b 6 e<br>2a Ebert ETT f<br>4 g<br>-0.04 Pert} a Tt 2 V-2.5GSa [V] = -3.0b -3.5c -4.0d -4.5e -5.0f -6.0g<br>P o ALIT SSS TET —<br>0.00 0<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A -0.30<br>VDS ID<br>Typ. transfer characteristics ID= f ( VGS )D= f ( VGS )= f ( VGS ) f ( VGS ) ( VGS ) VGS )GS ) ) Typ. forward transconductance<br>DS > 2 x ID x RDS(on)maxID x RDS(on)maxD x RDS(on)max x RDS(on)maxRDS(on)maxDS(on)max gfs = f(ID); Tj=25°C<br>parameter: tp = 80 µs tp = 80 µsp = 80 µs = 80 µs parameter: gfs<br>-0.30 0.22<br> S<br> A EEE| ) A=<br>0.18<br>0.16<br>LLLEEELE| | eT td<br>-0.20<br>0.14<br>] = AReee<br>0.12<br>ee PT YET TT<br>-0.15<br>0.10<br>t | 0.08 Annee<br>-0.10 LEEEE EVEL) ot Gee<br>0.06<br>PEAR) 0.04 epee<br>-0.05<br>0.02<br>0.00 CCEA) A 0.00 EEEPELLEE L E T<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40<br>VGS ID<br>DS(on)<br>D<br>I R<br>ID gfs<br>**----- End of picture text -----**<br> ## **Typ. transfer characteristics** ID= f ( VGS )D= f ( VGS )= f ( VGS ) f ( VGS ) ( VGS ) VGS )GS ) ) V > DS 2 x ID x RDS(on)maxID x RDS(on)maxD x RDS(on)max x RDS(on)maxRDS(on)maxDS(on)max parameter: tp = 80 µs tp = 80 µsp = 80 µs = 80 µs 20 16 - 06 - 21 Rev 2.0 Page 5 **BSS84PW** ## **Gate threshold voltage** ## **Drain-source on-resistance** VGS(th) = f (Tj) RDS(on) = f(Tj) parameter: ID = -0.17A, VGS = -10 V parameter: VGS = VDS, ID = -20 µA **==> picture [482 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 16 -2.5<br>W<br> V max.<br>Fe STL<br>12<br>10 TA max. LT<br>-1.5 typ.<br>8 er ST<br>-1.0 min.<br>6<br>L ea typ. ~<br>m eeaiecaile ee<br>4<br>eT SAL<br>-0.5<br>2<br>eee<br>0 0.0<br>-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 180<br>T T<br>j j<br>Typ. capacitances Forward characteristics of reverse diode<br>C = f(VDS)DS)) IF = f (VSD)<br>Parameter: VGS=0 V, f=1 MHzVGS=0 V, f=1 MHzGS=0 V, f=1 MHz=0 V, f=1 MHzf=1 MHz=1 MHz parameter: TTj , tp = 80 µs= 80 µs p = 80 µs= 80 µs<br>j , tp = 80 µs= 80 µs<br>10 2 -10 0 0 BSS84PW<br>———— a e<br>A<br>——— ff gee<br> pF<br>oo LUA<br>Ciss -10 -1 -1 EDA<br>e e TA<br>a ee Se<br>10 1 INET Coss EBEEEEEEEEEE<br>———— — Le TEE<br>Crss -10 -2 -2<br>a S 1 TT<br>Tj = 25 °C typj = 25 °C typ = 25 °C typ<br>Tj = 150 °C typj = 150 °C typ = 150 °C typ<br>Tj = 25 °C (98%)j = 25 °C (98%) = 25 °C (98%)<br>Tj = 150 °C (98%)j = 150 °C (98%) = 150 °C (98%)<br>10 0 PCCP) -10 -3 -3 pEEEE at FEL<br>0 -5 -10 -15 -20 V -30 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0<br>VDS VSDSD<br>DS(on) GS(th)<br>R V<br>F<br>C I<br>**----- End of picture text -----**<br> ## **Forward characteristics of reverse diode** ## **Typ. capacitances** C = f(VDS)DS)) Parameter: VGS=0 V, f=1 MHzVGS=0 V, f=1 MHzGS=0 V, f=1 MHz=0 V, f=1 MHzf=1 MHz=1 MHz **==> picture [229 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> parameter: TTj , tp = 80 µs= 80 µs<br>BSS84PW<br>-10 0 0 a e<br>A<br>ff gee<br>LUA<br>-10 -1 -1 EDA<br>TA<br>Se<br>EBEEEEEEEEEE<br>Le TEE<br>-10 -2 -2<br>1 TT<br>Tj = 25 °C typj = 25 °C typ = 25 °C typ<br>Tj = 150 °C typj = 150 °C typ = 150 °C typ<br>Tj = 25 °C (98%)j = 25 °C (98%) = 25 °C (98%)<br>Tj = 150 °C (98%)j = 150 °C (98%) = 150 °C (98%)<br>-10 -3 -3 pEEEE at FEL<br>0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0<br>VSDSD<br>F<br>I<br>**----- End of picture text -----**<br> 20 16 - 06 - 21 Rev 2.0 Page 6 **BSS84PW** ## **Avalanche energy** ## EAS = f (Tj) ## par.: ID = -0.15 A , VDD = -25 V, RGS = 25[W] **==> picture [225 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br> mJ |<br>2.0<br>:<br>TT,\<br>1.5 \<br>\<br>1.0<br>.<br>\<br>0.5<br>No<br>Py yy NE~<br>0.0<br>25 45 65 85 105 125 °C 165<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br> ## **Typ. gate charge** VGS = f (QGate) ## parameter: ID = -0.15 A pulsed **==> picture [225 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> BSS84PW<br>-16 CCOCCECECCEEEn<br>V FCECEECEC ECV<br>SESSR00000/.0/.00<br>-12 FCCCPCECEECEYCEC HATPCE<br>-10 SEeee00/0 40008<br>0,2 VDS max<br>0,8 VDS max<br>ee P CCW coe<br>-8 C OC<br>-6<br>bE<br>PCE ACE<br>-4<br>aeeee4neeeenen<br>-2<br>COREE ECE<br>VCELECALEPA CEC E LC E LELELLEECECEES<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5<br>QGate<br>GS<br>V<br>**----- End of picture text -----**<br> ## **Drain-source breakdown voltage** ## V(BR)DSS = f (Tj) **==> picture [227 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> BSS84PW<br>-72 Yr | | | | | | | tt yf<br>V rt | | | ft tt ty<br>rt | | | ft tt ty<br>-68 rtrf || || ft| fttt ttte tttyPe<br>-66 Ptrt tT| tt| | || ty| dt| rTte AYe<br>-64 rtP| || || || || tT| Ye eTTt fl<br>ee Ane<br>-62 PEEELIA ELE<br>-60 -58 Pitrfrtitiv7AF,_PAT tTET]Ey yeet tl<br>| iviYi | ft| || |ttttttft flfl<br>-56 YtZ| | || || || || || ft| fttttf<br>-54 rt | | | | | | tt tT<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> Rev 2.0 Page 7 20 16 - 06 - 21 **BSS84PW** ## **Package Outline SOT-323** ## **Footprint** Soldering type: Reflow soldering ## Soldering type: Wave soldering ## **Tape and Reel** - - 20 16 06 21 Rev 2.0 Page 8 **BSS84PW** ## BSS84PW |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2016-06-27|Release of final version| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** 9
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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