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Illustrative purposes only
BSS84PH6327XTSA2
Power MOSFET, P Channel, 60 V, 170 mA, 8 ohm, SOT-23, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; P
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: SIPMOS Series
- Qualification: AEC-Q101
- Power Dissipation: 360mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 170mA
- Drain Source On State Resistance: 8ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.033 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSS84P**
**SIPMOS**[] **Small-Signal-Transistor Product Summary Feature** ; P-Channel ee _V_ DS -60 V _R_ 8 . Enhancement mode | DS(on) a | , _I_ D -0.17 A Logic Level Avalanche rated PG-SOT-23 3 d _v_ /d _t_ rated ¢ • Pb-free lead Qualified according to AEC Q101 plating; ROHS compliant = RoHS 7° CA 2 AEC alified S/ Ne • Halogen-free according to IEC61249-2-21 @® Halogen-Free 1 VPS05161 **Type Package Tape and Reel Marking** Drainpin 3 BSS84P PG-SOT-23 H6327:3000pcs/r. YBs Gate pin1 BSS84P PG-SOT-23 H6433:10000pcs/r. YBs Source pin 2
|**Parameter**|**Symbol**<br>ee|**Value**<br>**Unit**<br>ee|**Unit**|
|---|---|---|---|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D<br>ee|-0.17<br>-0.14<br>A<br>-0.68<br> ee|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|||
|Avalanche energy, single pulse<br>_I_D=-0.17 A ,_V_DD=-25V,_R_GS=25<br>.|_E_AS<br>_||2.6<br>mJ<br>0.036<br>|<br>ee|mJ|
|Avalanche energy, periodic limited by_T_jmax|_E_AR<br>ee|||
|jmax<br>Reverse diode d_v_/d_t_<br>_I_S=-0.17A,_V_DS=-48V, d_i_/d_t_=-200A/µs,_T_jmax=150°C|d_v_/d_t_|-6<br>kV/µs|kV/µs|
|Gate source voltage|_V_GS<br>ee|±20<br>V<br>ee|V|
|Power dissipation<br>_T_A=25°C|_P_tot|0.36<br>W|W|
|Operating and storage temperature|_T_j,_T_stg<br>ee|-55... +150<br>°C<br>ee|°C|
|IEC climatic category; DIN IEC 68-1|jstg|55/150/56||
|ESD Class<br>JESD22-A114-HBM|||Class 0<br>|||
2011-07-11
Rev 2.7 Page 1
**BSS84P**
**Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~||||||
|**Characteristics**||||||
|Thermal resistance, junction - soldering point|_R_thJS|-|-|200|K/W|
|(Pin 3)||||||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|-|350||
|@ 6 cm2cooling area1)||-|-|300||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>||_V_(BR)DSS<br>|<br>||-60<br>ff<br>||-<br>ff<br>||-<br>ff|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-20µA<br>|<br>||_V_GS(th)<br>|<br>|<br>||-1<br>ff<br>|<br>||-1.5<br>ff<br>|<br>||-2<br>ff<br>|||
|Zero gate voltage drain current<br>_V_DS=-60V,_V_GS=0,_T_A=25°C<br>_V_DS=-60V,_V_GS=0,_T_A=125°C<br>tt<br>||_I_DSS<br>tt<br>||-<br>-<br>|<br>tt<br>||-0.1<br>-10<br>|<br>tt<br>||-1<br>-100<br>tt|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>|<br>||_I_GSS<br>|<br>||-<br>|<br>||-10<br>|<br>||-100<br>||nA|
|Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.14A<br>|<br>||_R_DS(on)<br>|<br>|<br>||-<br>|<br>i|8<br>|<br>ty|12<br>ty|ty|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.17A<br>|<br>||_R_DS(on)<br>|<br>|<br>|<br>||-<br>|<br>i<br>**|**|5.8<br>|<br>ty|8<br>ty||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2011-07-11
Rev 2.7
Page 2
**BSS84P**
|**BSS84P**|**BSS84P**|**BSS84P**|**BSS84P**|**BSS84P**|**BSS84P**|**BSS84P**|**BSS84P**|
|---|---|---|---|---|---|---|---|
|**Electrical Characteristics**, at_T_A= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~es~~<br>~~ee~~||||||||
|Transconductance<br>_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=-0.14A<br>0.065<br>0.13<br>-<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>15<br>19<br>Output capacitance<br>_C_oss<br>-<br>6<br>8<br>Reverse transfer capacitance<br>_C_rss<br>-<br>2<br>3<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-30V,_V_GS=-4.5V,<br>_I_D=-0.14A,_R_G=25<br>-<br>6.7<br>10<br>Rise time<br>_t_r<br>-<br>16.2<br>24.3<br>Turn-off delay time<br>_t_d(off)<br>-<br>8.6<br>12.9<br>Fall time<br>_t_f<br>-<br>20.5<br>30.8<br>ft tt<br>===><br>= EE<br>ee|||||||S<br>pF<br>ns|
|**Gate Charge Characteristics**||||||||
|Gate to source charge<br>_Q_gs||_V_DD=-48V,_I_D=-0.17A|-||0.25|0.37|nC|
|Gate to drain charge<br>_Q_gd|||-||0.3|0.45||
|Gate charge total<br>_Q_g||_V_DD=-48V,_I_D=-0.17A,|-||1|1.5||
|||_V_GS=0 to -10V||||||
|Gate plateau voltage<br>_V_(plateau)||_V_DD=-48V,_I_D=-0.17A|-||-3.42|-|V|
|**Reverse Diode**||||||||
|Inverse diode continuous<br>_I_S||_T_A=25°C|-||-|-0.17|A|
|forward current||||||||
|Inv. diode direct current, pulsed<br>_I_SM|||-||-|-0.68||
|Inverse diode forward voltage<br>_V_SD||_V_GS=0,_I_F=-0.17A|-||-0.93|-1.24|V|
|Reverse recovery time<br>_t_rr||_V_R=-30V,_I_F=_l_S,|-||23|34|ns|
|Reverse recovery charge<br>_Q_rr||d_i_F/d_t_=100A/µs|-||10|15|nC|
2011-07-11
Rev 2.7
Page 3
**BSS84P**
## **1 Power dissipation**
## _P_ tot = _f_ ( _T_ A)
## **2 Drain current**
## _I_ D = _f_ ( _T_ A)
## parameter: _V_ GS > 10 V
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**----- Start of picture text -----**<br>
BSS 84 P BSS 84 P<br>0.38 W PT TTT TEE EEE EE EE -0.18<br>FREE EEE A NEE Eeeeeeeee<br>0.32 PEt IN TPE Te ee TT tt | PUT ENEEE<br>BERANE FOLENS<br>-0.14<br>0.28 PT TT TN EE EEE EE ET FLELLEINELLEELLEELT<br>PT TE; INET EET EET TO FOCEE EEE EE<br>BRRRRRNEEeee -0.12 :<br>0.24<br>FCCEEP AEE ee oN<br>FRCCEE NEC -0.1 SEER EREEEeNEEEEE<br>0.2<br>-0.08<br>0.16 eepeeeere<br>P BEREAN<br>0.12 FEEEEEBERN ERNE -0.06 PEEPEE EETEET EEEE EEEENENT<br>0.08 FYBERNEEELELEELINCELT -0.04 PETEPEE EET Tee EEEEEEE EA<br>0.04 -0.02<br>ECE EEE<br>0 FEEEEEP Peer 0 PETE EEE [TEEPE]<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>— T A —r T A<br>tot<br>P I D<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D = _f_ ( _V_ DS )
parameter : _D_ = 0 , _T_ A = 25 °C
## **4 Transient thermal impedance**
_Z_ thJA = _f_ ( _t_ p)
parameter : _D_ = _t_ p/ _T_
**==> picture [487 x 267] intentionally omitted <==**
**----- Start of picture text -----**<br>
-10 1 BSS 84 P 10 3 BSS 84 P<br>A K/W<br>rt TTT rt e<br>PO et 0<br>-10 0 t p = 170.0µs 10 2<br> 1 ms<br>-10 -1 10 1<br>D = 0.50<br> 10 ms<br>r | TTP UT TTA TT TT ST STS 0.20 HMIIIl<br>0.10<br>0.05<br>-10 -2 Cn CNT 10 0 TOR il<br>single pulse 0.02<br>DC<br>0.01<br>rfA| TTT FANNCATT 00000000CMT TTT) HMIIIl<br>-10 -3 a a All 10 -1 PTI UIE TWAT TERN- ET UUE<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] s 10 [4 ]<br>—_> V DS —_> t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br>
2011-07-11
Rev 2.7
Page 4
**BSS84P**
## **5 Typ. output characteristic**
_I_ D = _f_ ( _V_ DS)
parameter: _T_ j = 25 °C
**==> picture [224 x 603] intentionally omitted <==**
**----- Start of picture text -----**<br>
BSS 84 P<br>-0.4<br>P tot = 0.36W<br>A<br>l<br>PR EECE k j i h V GS [V]<br>g a -2.5<br>eas ee<br>-0.32<br>b -3.0<br>ht YA f<br>c -3.5<br>-0.28 YY e d -4.0<br>e -4.5<br>-0.24 lft f -5.0<br>d g -5.5<br>fe<br>-0.2 h -6.0<br>e/a<br>i -6.5<br>-0.16 e/ Aaa c j -7.0<br>k -8.0<br>TWEETeH<br>-0.12 l -10.0<br>-0.08 ee b<br>© oe<br>ya<br>-0.04<br>a a<br>0 verti ttt<br>0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V -5<br>V DS<br>7 Typ. transfer characteristics<br>D== f ( V GS ); | ); | V DS| > 2 x | I D| x x R DS(on)max<br>parameter: T j = 25 °C<br>0.4<br>A<br>0.3<br>PEREHTT<br>0.25<br>LELE AT<br>0.2<br>ELL ALL<br>0.15<br>0.1<br>FEEEEEPCCEE /<br>0.050 LEAL Y ELL<br>0 1 2 3 4 V 6<br>- V GS<br>D<br>I<br>I D-<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics**
_I_ D== _f_ ( _V_ GS ); | ); | _V_ DS| > 2 x | _I_ D| x x _R_ DS(on)max parameter: _T_ j = 25 °C
## **6 Typ. drain-source on resistance**
_R_ DS(on) = _f_ ( _I_ D)
parameter: _V_ GS; _T_ j = 25 °C
**==> picture [229 x 602] intentionally omitted <==**
**----- Start of picture text -----**<br>
BSS 84 P<br>26<br>a b c d e f g<br>ari<br>22<br>Oateeeeeeeeieniee<br>20 Coen eenseeeeeeiee<br>18<br>ee ee<br>16 ee ee<br>14<br>Jb<br>12 ALLLeeELLEeeTT<br>10<br>h<br>8 4 Lf J)LZ, i<br>j<br>6 eee“PJD LTE k<br>l<br>|<br>4<br>V GS [V] =<br>2 -2.5a -3.0b -3.5c -4.0d -4.5e -5.0f -5.5g -6.0h -6.5i -7.0j -8.0k -10.0l<br>0 |<br>0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32A -0.38<br>I D<br>8 Typ. forward transconductance<br>fs = f( = f( I D))<br>parameter: T j = 25 °C<br>0.16<br>S<br>0.12<br>CL eReEEE<br>0.1<br>ALE<br>0.08<br>ALLE<br>0.06<br>0.04<br>HEEL<br>0.020 PELELL LE ELE<br>0 0.04 0.08 0.12 0.16 A 0.22<br>- I D<br>DS(on)<br>R<br>fs<br>g<br>**----- End of picture text -----**<br>
## **8 Typ. forward transconductance**
_g_ fs = f( = f( _I_ D))
parameter: _T_ j = 25 °C
Rev 2.7 Page 5
2011-07-11
**BSS84P**
## **9 Drain-source on-state resistance**
_R_ DS(on) = _f_ ( _T_ j)
parameter : _I_ D = -0.17 A, _V_ GS = -10 V
## **10 Typ. gate threshold voltage**
## _V_ GS(th) = _f_ ( _T_ j)
parameter: _V_ GS = _V_ DS
**==> picture [482 x 264] intentionally omitted <==**
**----- Start of picture text -----**<br>
BSS 84 P<br>21 Yr | | | | [| [ [| | | | |] 2.4<br>V<br>18<br>98%<br>SEEEEEEEEEHA r | | | | [| [ | | | | |] ML ~<br>16 r | | | | [| [ | | | | |] 2<br>FEE EEEEEE HSL EE<br>1.8<br>14<br>pt i tt { f | Pt tt L<br>i a mM]<br>1.6<br>12 r | | | [| [| [ | | prt |] a| Jo) typ. PSE]<br>a PTT PALI<br>1.4<br>10 Ff ot | ft ff pe} fT SL<br>98%<br>1.2<br>8 SERCee Teeeer mhtPtiskLTT|] [PAN] 2% NU NX<br>1<br>6 Peper typ<br>4 L-—-+Ta | | [| [| | | | | | | 0.8 eT TT LE | ~PSD |<br>2 0.6<br>FEE<br>0 0.4<br>-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160<br>T A T A<br>GS(th)<br>DS(on) V<br>R -<br>**----- End of picture text -----**<br>
## **11 Typ. capacitances**
## _C_ = _f_ ( _V_ DS)
parameter: _V_ GS=0, _f_ =1 MHz
## **12 Forward character. of reverse diode**
_I_ F = _f_ (VSD)
## parameter: _T_ j , tp = 80 µs
**==> picture [478 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 2 -10 0 BSS 84 P<br>pF Neot ee A AeVala<br>Ciss -10 -1<br>ee AAC<br>Coss<br>10 1 i =.<br>-10 -2<br>—— a |<br>Crss T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 0 | | fe -10 -3 H“LL eo LL<br>0 5 10 V 20 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br> - V DS V SD<br>F<br>I<br>C<br>**----- End of picture text -----**<br>
2011-07-11
Rev 2.7
Page 6
**BSS84P**
## **13 Typ. avalanche energy**
## _E_ AS = _f_ ( _T_ A), parameter:
## _I_ D = -0.17 A , _V_ DD = -25 V, _R_ GS = 25
**==> picture [226 x 259] intentionally omitted <==**
**----- Start of picture text -----**<br>
3<br> mJ |<br>2<br>\<br>PATE,<br>1.5 \<br>\<br>1<br>\<br>N<br>0.5 yy | weNE<br>0 ~~<br>25 45 65 85 105 125 °C 165<br>T A<br>AS<br>E<br>**----- End of picture text -----**<br>
## **14 Typ. gate charge**
## _V_ GS = _f_ ( _Q_ Gate)
parameter: _I_ D = -0.17 A pulsed; _T_ j = 25 °C
**==> picture [225 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
BSS 84 P<br>-16 SeGeeeeeeeeeene<br>V<br>SeGGeeeeeene4n<br>POCO<br>Ve<br>SeGeneeeee<br>-12 47 enn<br>SeGeneeee74nnn<br>POCEEE AV<br>-10<br>0,2 V DS max<br>0,8 V DS max<br>Ee PTET Vy on<br>-8 POCO VO<br>-6<br>COO<br>FCCC VTZAL ELE<br>-4 POAT<br>Senn 4000nnnen<br>-2<br>OE PLCC ECEEEE Err<br>0 ZOCCCCO ee<br>0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5<br>Q Gate<br>GS<br>V<br>**----- End of picture text -----**<br>
## **15 Drain-source breakdown voltage**
## _V_ (BR)DSS = _f_ ( _T_ A)
**==> picture [226 x 265] intentionally omitted <==**
**----- Start of picture text -----**<br>
BSS 84 P<br>-72 Pt tT ttt tt te ty<br>V<br>Pt ttt te et tt tt ft<br>Pt ttt te et tt tt ft<br>-68 PtPt tttttt tettet tttt |ttPeft<br>-66 PtPT |tT ttett tettte tT| tAtA fT<br>-64 PtPt tTtT tttttt tetT yetT etet tf<br>-62 PiePEEPttt yt | tt yt<br>-60 PitPit iAtT yA Tt| ttttetyt<br>-58 -56 PiliPTY,PyvYi ytTTTtt tttt tttt ytyt<br>Zi i tT| tt tti | ittttttft<br>-54 FTE TET tt tt tt<br>-60 -20 20 60 100 °C 180<br>T A<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>
Rev 2.7 Page 7
2011-07-11
**BSS84P**
## **Pub ed by**
## **Infi n Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
2011-07-11
Rev 2.7 Page 7
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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