BSS84LT1G

BSS84L, BVSS84L 

## Power MOSFET Single P-Channel SOT-23 -50 V, 10 

- SOT−23 Surface Mount Package Saves Board Space 

- BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

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**V(BR)DSS RDS(ON) MAX** −50 V 10  @ 10 V 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **P−Channel Rating Symbol Value Unit** 3 Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current mA Continuous @ TA = 25 ° C ID 130 1 Pulsed Drain Current (tp ≤ 10 s) IDM 520 Total Power Dissipation @ TA = 25 ° C PD 225 mW Operating and Storage Temperature TJ, Tstg −55 to ° C 2 Range 150 ~~ee~~ Thermal Resistance − Junction−to−Ambient ~~ee~~ R JA 556 ~~ee~~ ° C/W 3 **SOT−23** Maximum Lead Temperature for Soldering TL 260 ° C **CASE 318** Purposes, for 10 seconds 1 **STYLE 21** ~~=a|!~~ Stresses exceeding those listed in the Maximum Ratings table may damage 2 the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **MARKING DIAGRAM & PIN ASSIGNMENT** 

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3<br>Drain<br>PD M<br>=<br>1 2<br>Gate Source<br>PD = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(*Note: Microdot may be in either location) 

**ORDERING INFORMATION Device Package Shipping**[†] BSS84LT1G SOT−23 3000 / Tape & Reel (Pb−Free) BVSS84LT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~Ft~~ †For information on tape and reel specifications, including part orientation and tape sizes, please ~~—~~ refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 1997 **October, 2016 − Rev. 9** 

**BSS84LT1/D** 

**BSS84L, BVSS84L** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**<br>**S**||**ymbol**<br>**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Drain−to−Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= −250�Adc)<br>V(||BR)DSS<br>−50|−|−|Vdc|
|Zero Gate Voltage Drain Current<br>(VDS= −25 Vdc, VGS= 0 Vdc)<br>(VDS= −50 Vdc, VGS= 0 Vdc)<br>(VDS= −50 Vdc, VGS= 0 Vdc, TJ= 125°C)<br>||IDSS<br>−<br>−<br>−|−<br>−<br>−|−0.1<br>−15<br>−60|�Adc|
|Gate−Body Leakage Current (VGS=±20 Vdc, VDS= 0 Vdc)<br>||IGSS<br>−|−|±10|nAdc|
|**ON CHARACTERISTICS**(Note 1)||||||
|Gate−Source Threaded Voltage (VDS= VGS, ID= −250�A)<br>V||GS(th)<br>−0.9|−|−2.0|Vdc|
|Static Drain−to−Source On−Resistance (VGS= −5.0 Vdc, ID= −100 mAdc)<br>R||DS(on)<br>−|4.7|10|�|
|Transfer Admittance (VDS= −25 Vdc, ID= −100 mAdc, f = 1.0 kHz)|||yfs|<br>50|−|−|mS|
|**DYNAMIC CHARACTERISTICS**||||||
|Input Capacitance|VDS= 5.0 Vdc|Ciss<br>−|36|−|pF|
|Output Capacitance|VDS= 5.0 Vdc<br>|Coss<br>−|17|−||
|Transfer Capacitance|VDG= 5.0 Vdc<br>|Crss<br>−|6.5|−||
|**SWITCHING CHARACTERISTICS**(Note 2)||||||
|Turn−On Delay Time|VDD= −15 Vdc, ID= −2.5 Adc,<br>RL= 50�<br>t<br>t|d(on)<br>−|3.6|−|ns|
|Rise Time||tr<br>−|9.7|−||
|Turn−Off Delay Time||d(off)<br>−|12|−||
|Fall Time||tf<br>−|1.7|−||
|Gate Charge|VDD= −40 Vdc, ID= −0.5 A,<br>VGS= −10 V|QT<br>−|2.2|−|nC|
|**SOURCE−DRAIN DIODE CHARACTERISTICS**||||||
|Continuous Current||IS<br>−|−|−0.130|A|
|Pulsed Current||ISM<br>−|−|−0.520||
|Forward Voltage (Note 2)|VGS= 0 V, IS= −130 mA<br>|VSD<br>−|−|−2.2|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

2. Switching characteristics are independent of operating junction temperature. 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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0.6 0.5<br>VDS = 10 V 25°C 0.45 TJ = 25 ° C V GS  = -3.5 V<br>0.5 -55°C 150°C 0.4 -3.25 V<br>0.35<br>0.4<br>0.3 -3.0 V<br>0.3 0.25<br>0.2 -2.75 V<br>0.2<br>0.15<br>-2.5 V<br>0.1<br>0.1<br>0.05 -2.25 V<br>0 0<br>1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10<br>-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS) , DRAIN CURRENT (AMPS)<br>D D<br>−I −I<br>**----- End of picture text -----**<br>


**Figure 1. Transfer Characteristics** 

**Figure 2. On−Region Characteristics** 

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**2** 

**BSS84L, BVSS84L** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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9 7<br>VGS = -4.5 V 6.5 VGS = -10 V 150°C<br>8 150°C<br>6<br>7 5.5<br>6 5<br>4.5<br>5 25°C 4 25°C<br>4 3.5<br>3 -55°C 3 -55°C<br>2.5<br>2 2<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6<br>-ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current<br>2 -8<br>VDS = -40 V<br>1.8 VGS = -10 V -7 TJ = 25°C<br>ID = -0.52 A<br>1.6 -6<br>-5<br>1.4<br>VGS = -4.5 V -4<br>1.2 ID = -0.13 A<br>-3 ID = -0.5 A<br>1<br>-2<br>0.8<br>-1<br>0.6 0<br>-�55 -5 45 95 145 0 500 1000 1500 2000<br>TJ, JUNCTION TEMPERATURE (°C) QT, TOTAL GATE CHARGE (pC)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)<br>(NORMALIZED)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Gate Charge** 

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1<br>TJ = 150°C 25°C -55°C<br>0.1<br>0.01<br>0.001<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VSD, DIODE FORWARD VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>ID<br>**----- End of picture text -----**<br>


**Figure 7. Body Diode Forward Voltage** 

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**3** 

**BSS84L, BVSS84L** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

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D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 21:<br>END VIEW PIN 1. GATE<br>2. SOURCE<br>3. DRAIN<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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