BSS84ES

## **MOSFET Single, P-Ch** 

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## **Features** 

- Low on-resistance 

- High-speed switching 

- Drive circuits can be simple 

- Parallel use is easy 

- ESD protected gate up to 2KV HBM 

## **Typical Applications** 

- P-channel enhancement mode effect transistor 

- Switching application 

## **Mechanical Data** 

- Case: SOT-23 

- Molding Compound: UL Flammability Classification Rating 94V-0 

- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 

## **Maximum Ratings (@TA=25°C unless otherwise specified)** 

|**Parameter**|**Symbol**|**Value**|**Units**|
|---|---|---|---|
|Drain-to-Source Voltage|VDSS|-50|V|
|Gate-to-Source Voltage|VGSS|±20||
|Continuous Drain Current|ID|-130|mA|
|Pulsed Drain Current *4|IDM|-520||



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Value**|**Unit**|
|Power Dissipation *1|SOT-23|PD|0.36|W|
|Thermal Resistance Junction-to-Air *1||RθJA|347|°C/W|
|Thermal Resistance Junction-to-Lead *1||RθJL|208|°C/W|
|Thermal Resistance Junction-to-Case *1||RθJC|175|°C/W|
|OperatingJunction Temperature Range||TJ|-55 to +150|°C|
|Storage Temperature Range||TSTG|-55 to +150|°C|



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## **MOSFET Single, P-Ch** 

## **Electrical Characteristics (@TA=25°C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|VDSS|Drain-Source Breakdown Voltage|VGS= 0V, ID= -250μA|-50|-|-|V|
|IDSS|Zero Gate Voltage Drain Current|VDS= -50V, VGS= 0V|-|-|-1|μA|
|IGSS|Gate-BodyLeakage Current|VGS= ±20V, VDS= 0V|-|-|±10|μA|
|**On Characteristics *2**|||||||
|RDS(ON)|Static Drain-Source On-resistance|VGS= -5V, ID= -0.1A|-|2.4|8|Ω|
|||VGS= -10V, ID= -0.13A|-|2|6||
|VGS(TH)|Gate Threshold Voltage|VDS= VGS, ID = -250μA|-1|-1.5|-2|V|
|**Dynamic Characteristics *3**|||||||
|CISS|Input Capacitance|VGS= 0V<br>VDS= -20V<br>f = 1.0MHz|-|53|-|pF|
|COSS|Output Capacitance||-|11|-||
|CRSS|Reverse Transfer Capacitance||-|5|-||
|RG|Gate Resistance|f = 1.0MHz, VGS= 0V|-|721|-|Ω|
|**Switching Characteristics**|||||||
|td(ON)|Turn-on DelayTime|VDS= -15V<br>RL= -50Ω<br>ID= -2.5A|-|2.5|-|ns|
|tr|Turn-on Rise Time||-|1|-||
|td(OFF)|Turn-Of DelayTime||-|16|-||
|tf|Turn-Of Fall Time||-|8|-||
|QG|Total Gate-Charge|VDS= -25V<br>VGS= -4.5V<br>ID= -0.2A|-|2.5|-|nC|
|QGS|Gate to Source Charge||-|0.83|-||
|QGD|Gate to Drain(Miller)Charge||-|0.82|-||
|**Source-Drain Diode Characteristics**|||||||
|VSD|Diode Forward Voltage *2|IS= -0.26A, VGS= 0 V|-|-0.9|-1.4|V|
|IS|Continuous Source Current|TC= 25°C|-|-|-0.13|A|
|ISM|Pulsed Source Current|TC= 25°C|-|-|-0.52|A|



Notes: 

1. Surface mounted on FR4 board, and standard footprint, t ≤ 10 sec 

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 

3. Guaranteed by design, not subject to production 

4. Pulse width limited by maximum junction temperature 

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## **MOSFET Single, P-Ch** 

## **Ratings and Characteristic Curves (TA=25°C unless otherwise noted)** 

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## **MOSFET Single, P-Ch** 

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## **MOSFET Single, P-Ch** 

## **Package Outline Dimensions** 

## **SOT-23** 

## **Mounting Pad Layout** 

Dimensions : Millimetres 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|MOSFET, Single, P-Channel, Enhancement Mode, -50V, -130mA, 0.36W, SOT-23|BSS84ES|



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