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BSS8402DW-7-F

Dual MOSFET, Complementary N and P Channel, 60 V, 115 mA, 13.5 ohm, SOT-363, Surface Mount

  • Manufacturer: DIODES INC.
  • Product type: Dual MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • Channel Type: Complementary N and P Channel
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Complementary N and P Channel
  • Power Dissipation Pd: 200mW
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 13.5ohm
  • Transistor Case Style: SOT-363
  • Drain Source Voltage Vds: 60V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 115mA
  • Power Dissipation N Channel: 200mW
  • Power Dissipation P Channel: 200mW
  • Gate Source Threshold Voltage Max: 2.5V
  • Drain Source Voltage Vds N Channel: 60V
  • Drain Source Voltage Vds P Channel: 60V
  • Continuous Drain Current Id N Channel: 115mA
  • Continuous Drain Current Id P Channel: 115mA
  • Drain Source On State Resistance N Channel: 13.5ohm
  • Drain Source On State Resistance P Channel: 13.5ohm
Delivery and price
Units per pack 500
Price 0.285 €
Current stock 33072
Lead time 7 days
PDF File icon Datasheet