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BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 50 V, 115 mA, 130 mA, 7.5 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-363
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 200mW
- Power Dissipation P Channel: 200mW
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 50V
- Continuous Drain Current Id N Channel: 115mA
- Continuous Drain Current Id P Channel: 130mA
- Drain Source On State Resistance N Channel: 7.5ohm
- Drain Source On State Resistance P Channel: 10ohm
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.129 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSS8402DW** gy ## **COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Device**|**BVDSS**|**RDS(ON) Max**|**ID**<br>**TA = +25°C**| |---|---|---|---| |Q1|60V|13.5Ω@VGS= 10V|115mA| |Q2|-50V|10Ω@VGS= -5V|-130mA| ## **Features and Benefits** - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Complementary Pair ## **Description** This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **The BSS8402DWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** **https://www.diodes.com/quality/product-definitions/** ## **Applications** ## **Mechanical Data** - General Purpose Interfacing Switch - Power Management Functions - Analog Switch - Case: SOT363 - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 **e3** - Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) **==> picture [33 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>**----- End of picture text -----**<br> Top View **==> picture [98 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> D1 G2 S2<br>Q1 Q2<br>S1 G1 D2<br>Top View<br>Internal Schematic<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4) |**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)| |---|---|---|---| ||||| |**Part Number**|**Compliance**|**Case**|**Packaging**| |BSS8402DW-7-F|Standard|SOT363|3,000/Tape & Reel| |BSS8402DW-13-F|Standard|SOT363|10,000/Tape & Reel| |BSS8402DWQ-7|Automotive|SOT363|3,000/Tape &Reel| |BSS8402DWQ-13|Automotive|SOT363|10,000/Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** **==> picture [527 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> KNP = Product Type Marking Code<br>YM or YM= Date Code Marking<br>Y or Y = Year (ex: G = 2019)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2003 2004 2005 2006 ~ 2018 2019 2020 2021 2022 2023 2024 2025 2026<br>Code P R S T ~ F G H I J K L M N<br>ee<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1 2 3 4 5 6 7 8 9 O N D<br>f+ — + ++} ++ ee++ee 4<br>BSS8402DW 1 of 8 October 2019<br>Document number: DS30380 Rev. 23 - 2 www.diodes.com © Diodes Incorporated<br>**----- End of picture text -----**<br> **BSS8402DW** ## **Maximum Ratings – Total Device** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss** **–** **Total Device** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation (Note 5)|PD|200|mW| |Thermal Resistance, Junction to Ambient|RθJA|625|°C/W| |Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C| ## **Maximum Ratings N-CHANNEL – Q1, 2N7002 Section** (@TA = +25°C, unless otherwise specified.) |**Characteristic**|**Symbol**|**Value**|**Unit**| |---|---|---|---| |Drain-Source Voltage|VDSS|60|V| |Drain-Gate Voltage RGS1.0MΩ|VDGR|60|V| |Gate-Source Voltage<br>Continuous<br>Pulsed|VGSS|±20<br>±40|V| |Drain Current (Note 5)<br>Continuous<br>Continuous @ +100°C<br>Pulsed|ID|115<br>73<br>800|mA| ## **Maximum Ratings P-CHANNEL – Q2, BSS84 Section** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratings P-CHANNEL –gs P-CHANNEL –s P-CHANNEL –** **Q2, BSS84 Section2, BSS84 Section, BSS84 Section BSS84 Section** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL –gs P-CHANNEL –s P-CHANNEL –** **Q2, BSS84 Section2, BSS84 Section, BSS84 Section BSS84 Section** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL –gs P-CHANNEL –s P-CHANNEL –** **Q2, BSS84 Section2, BSS84 Section, BSS84 Section BSS84 Section** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings P-CHANNEL –gs P-CHANNEL –s P-CHANNEL –** **Q2, BSS84 Section2, BSS84 Section, BSS84 Section BSS84 Section** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Drain-Source Voltage|VDSS|-50|V| |Drain-Gate Voltage RGS 20KΩ|VDGR|-50|V| |Gate-Source Voltage<br>Continuous|VGSS|20|V| |Drain Current(Note 5)<br>Continuous|ID|-130|mA| Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document, which can be found on our website at http://www.diodes.com/package-outlines.html. 2 of 8 **www.diodes.com** BSS8402DW Document number: DS30380 Rev. 23 - 2 October 2019 © Diodes Incorporated **BSS8402DW** ## **Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section** (@TA = +25°C, unless otherwise specified.) **==> picture [523 x 520] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 6)| |ee|Drain-Source Breakdown Voltage|BVDSS|60|70||V|VGS = 0V, ID = 10µA| |Zero Gate Voltage Drain Current|@ TC = +25°C|IDSS|||1.0|µA|VDS = 60V, VGS = 0V| |OO|@ TC = +125°C|500| |I|Gate-Body Leakage|IGSS|||±10|nA|VGS = ±20V, VDS = 0V| |ON CHARACTERISTICS (Note 6)| |S$|Gate Threshold Voltage|VGS|TIErr|(TH)|1.0|Irp||(I|2.5|OO|V|VDS = VGS, ID = 250µA| |Static Drain-Source On-Resistance @ TJ = +25°C||3.2|7.5|Ω|VGS = 5.0V, ID = 0.05A| |i|@ TJ = +125°C|[R][DS(ON)]|4.4|13.5|VGS = 10V, ID = 0.5A| |On-State Drain Current|ID(ON)|0.5|1.0||A|VGS = 10V, VDS = 7.5V| |Forward Transconductance|gFS|80|||mS|VDS =10V, ID = 0.2A| |||DYNAMIC CHARACTERISTICS| |||Input Capacitance|Ciss||22|50|pF| |Output Capacitance|Coss||11|25|pF|VDS = 25V, VGS = 0V,|f = 1.0MHz| |se|Reverse Transfer Capacitance|Crss||2.0|5.0|pF| |SWITCHING CHARACTERISTICS| |Turn-On Delay Time|tD(ON)||7.0|20|ns|VDD = 30V, ID = 0.2A,| |a|Turn-Off Delay Time|tD(OFF)||11|20|ns|RL = 150Ω, VGEN = 10V, RGEN = 25Ω| |Electrical Characteristics P-CHANNEL –|Q2, BSS84 Section|(@TA = +25°C, unless otherwise specified.)| |Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition| |OFF CHARACTERISTICS (Note 6)| |ee|Drain-Source Breakdown Voltage|BVDSS|-50|||V|VGS = 0V, ID = -250µA| |||-1|µA|VDS = -50V, VGS = 0V, TJ = +25°C| |Zero Gate Voltage Drain Current|IDSS|||-2|µA|VDS = -50V, VGS = 0V, TJ = +125°C| |eeeee|||-100|nA|VDS = -25V, V|ee|GS = 0V, TJ = +25°C| |Pe|Gate-Body Leakage|IGSS|||10|nA|VGS = 20V, VDS = 0V| |ON CHARACTERISTICS (Note 6)| |a|Gate Threshold Voltage|VGS(TH)|-0.8||-2.0|V|VDS = VGS, ID = -1mA| |Static Drain-Source On-Resistance|RDS(ON)|||10|Ω|VGS = -5V, ID = -0.100A| |Forward Transconductance|gFS|0.05|||S|VDS = -25V, ID = -0.1A| |Ce|DYNAMIC CHARACTERISTICS| |||Input Capacitance|Ciss|||45|pF| |Output Capacitance|Coss|||25|pF|VDS = -25V, VGS = 0V, f = 1.0MHz| |Reverse Transfer Capacitance|Crss|||12|pF| |es|ee| |SWITCHING CHARACTERISTICS| |Turn-On Delay Time|tD(ON)||10||ns|VDD = -30V, ID = -0.27A,| |ee|Turn-Off Delay Time|tD(OFF)||18||ee|ns|RGEN = 50Ω, VGS = -10V| **----- End of picture text -----**<br> Note: 6. Short duration pulse test used to minimize self-heating effect. 3 of 8 **www.diodes.com** BSS8402DW Document number: DS30380 Rev. 23 - 2 October 2019 © Diodes Incorporated **BSS8402DW** ## **N-CHANNEL – 2N7002 Section** **==> picture [484 x 654] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 7<br>T = 25j °C<br>6<br>0.8<br>5<br>0.6<br>4<br>3<br>0.4<br>2<br>0.2<br>|Zee 1<br>0 ae 0 PP<br>0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0<br>VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1 On-Region Characteristics Figure 2 On-Resistance vs. Drain Current<br>3.0 6<br>5<br>2.5 LEAT AA<br>4<br>2.0 TZ 3 Neer<br>2<br>1.5 Tih yyva ) peESEArTTTT<br>VGS = 10V, 1<br>ID [ = 200mA]<br>1.0 / 0 FETT<br>-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18<br>PEPE) TJ, JUNCTION TEMPERATURE (°C) = ECeEEete VGS, GATE TO SOURCE VOLTAGE (V) TT TT<br>Figure 3 On-Resistance vs. Junction Temperature Figure 4 On-Resistance vs. Gate-Source Voltage<br>10 250<br>9 VDS = 10V<br>8 AU1 HEPTEETTETTTETTTTT 200 PEL] LEE<br>7<br>6 LEE 150 ONCE Ef f-<br>5 LETtreet teeerer i<br>4 HEL in 1 100 TINY Ty<br>3<br>eTeer \<br>2 ALU et 50 SaENea<br>ers Ter \<br>1<br>0 H ELE EEEE 0 SaRaNGE\<br>0 0.2 0.4 0.6 0.8 1 0 25 50 75 100 125 150 175 200<br>ID, DRAIN CURRENT (A) TA, AMBIENT TEMPERATURE (°C)<br>Figure 5 Typical Transfer Characteristics Figure 6 Max Power Dissipation vs. Ambient Temperature<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br> GATE-SOURCE CURRENT (V)<br>V<br>GS,<br>, POWER DISSIPATION (mW)<br>P<br>D<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>R<br>, DRAIN-SOURCE CURRENT (A) DS(ON)<br>ID<br>**----- End of picture text -----**<br> 4 of 8 **www.diodes.com** BSS8402DW Document number: DS30380 Rev. 23 - 2 October 2019 © Diodes Incorporated **BSS8402DW** | **==> picture [522 x 706] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 2<br>) [V] (<br>G [E] 1.8<br>[nA)]<br>T = 150°CA O [LTA]<br>V<br>1.6<br>100<br>C [URRENT(] H [OLD]<br>S<br>1.4<br>T = 125°CA<br>T [HRE]<br>T = 85°CA<br>L [EAKAGE] 10 T [E] 1.2<br>Coe NN<br>[N] AI G [A]<br>RD T = 25°CA , )T [H] 1<br>, S (G [S]<br>D [S] V<br>I<br>0.8<br>1<br>ATCT -50 TLL -25 0 25 ELL 50 75 100 125 150<br>5 10 15 20 25 30 35 40 45 50 55 60<br>V , DRAIN-SOURCE VOLTAGE (V)DS Figure 8 Gate Threshold Variation vs. Junction TemperatureT , JUNCTION TEMPERATURE (°C)J<br>Figure 7 Typical Drain-Source Leakage Current vs. Voltage<br>P-CHANNEL – BSS84 Section<br>-600 -1.0<br>TA = 25°C<br>-500<br>-0.8<br>-400 ATTA<br>a o -0.6 HE AA<br>-300<br>fn -0.4<br>-200<br>-0.2<br>-100 eer<br>0 ) eenaannnncee a -0.0 IIInNTUTTEY ITIONE<br>0 -1 -2 -3 -4 -5 0 -1 -2 -3 -4 -5 -6 -7 -8<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)<br>Figure 9 Drain-Source Current vs. Drain-Source Voltage Figure 10 Drain Current vs. Gate-Source Voltage<br>10 15<br>9 Pt ye Ey tT VIDGS = -0.13A = -10V<br>8 12<br>7 HEPT TMP Ty yy<br>6 9<br>5<br>43 CNET 6<br>2 3<br>PTL [INT]<br>TA = 125°C<br>1 CO TE ty<br>0 | |rer TA = 25°C 0<br>0 enPt -1 eee Se -2 -3 -4 -5 -50 it -25 0 25 50 75 100 125 150<br>VGS, GATE TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE (V) TJ, JUNCTION TEMPERATURE ( 癈 °C )<br>Figure 11 On-Resistance vs. Gate-Source Voltage Figure 12 On-Resistance vs. Junction Temperature<br>BSS8402DW 5 of 8 October 2019<br>Document number: DS30380 Rev. 23 - 2 www.diodes.com © Diodes Incorporated<br>)<br>, STATIC DRAIN-SOURCE<br>ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE CURRENT (mA)<br>ID<br>)<br>, ON-RESISTANCE (<br>R<br>DS<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS GS(TH)<br>V<br>**----- End of picture text -----**<br> ## **P-CHANNEL – BSS84 Section** **BSS8402DW** **==> picture [493 x 434] intentionally omitted <==** **----- Start of picture text -----**<br> 25.0 1000<br>)A<br>20.0 See [n] ========<br>VGS = -3.5V N [T(] T = 150°CA<br>VGS = -3V<br>100<br>15.0 a Tee<br>C [URRE]<br>/ VGS = -4V VGS = -5V ee EGAK ===eee=== T = 125°CA<br>10.0 / / / VGS = -6V AE Se T = 85°CA<br>10<br>I [NL]<br>5.0 iL D [RA] T = 25°CA<br>VGS = -8V , S<br>VGS = -10V D [S]<br>- [I]<br>0.0 Th ....____-<br>-0.0 -0.2 -0.4 -0.6 -0.8 1.0 1 7| | | | | ft ff<br>5 10 15 20 25 30 35 40 45 50<br>Figure 13 On-Resistance vs. Drain CurrentID, DRAIN CURRENT (A) -V , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 14 Typical Drain-Source Leakage Current vs. Voltage<br>2<br>)<br>( [V]<br>G [E] 1.8<br>T [A] Pe<br>O [L]<br>V<br>1.6<br>D<br>O [L] Pett<br>H<br>S<br>E 1.4<br>R<br>T [H]<br>T [E] 1.2 eS<br>G [A]<br>, )H<br>1<br>( [T]<br>G [S]<br>- [V]<br>0.8<br>-50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (°C)J<br>Figure 15 Gate Threshold Variation vs. Junction Temperature<br>, DRAIN LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>)<br>, ON-RESISTANCE (<br>R<br>DS<br>**----- End of picture text -----**<br> 6 of 8 **www.diodes.com** BSS8402DW Document number: DS30380 Rev. 23 - 2 October 2019 © Diodes Incorporated **BSS8402DW** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [243 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>E E1<br>F<br>b<br>D<br>A2<br>c a<br>A1 e fan L<br>**----- End of picture text -----**<br> **==> picture [92 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>Dim Min Max Typ<br>A1 0.00 0.10 0.05<br>A2 0.90 1.00 0.95<br>b 0.10 0.30 0.25<br>c 0.10 0.22 0.11<br>D 1.80 2.20 2.15<br>E 2.00 2.20 2.10<br>E1 1.15 1.35 1.30<br>e 0.650 BSC<br>F 0.40 0.45 0.425<br>L 0.25 0.40 0.30<br>a 0° 8° --<br>All Dimensions in mm<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [166 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> SOT363<br>C<br>Y1 P o. G<br>Y<br>gor X<br>**----- End of picture text -----**<br> |**Dimensions**|**Value**<br>**(in mm)**| |---|---| |**C**|0.650| |**G**|1.300| |**X**|0.420| |**Y**|0.600| |**Y1**|2.500| 7 of 8 **www.diodes.com** BSS8402DW Document number: DS30380 Rev. 23 - 2 October 2019 © Diodes Incorporated **BSS8402DW** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated **www.diodes.com** 8 of 8 **www.diodes.com** BSS8402DW Document number: DS30380 Rev. 23 - 2 October 2019 © Diodes Incorporated
Updated at June 9, 2026
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