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BSS7728NH6327XTSA2
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.7ohm; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 360mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 200mA
- Drain Source On State Resistance: 5ohm
- Gate Source Threshold Voltage Max: 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 0.078 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
Rev. 2.5 **BSS7728N** ## **SIPMOS[] Small-Signal-Transistor** ## **Feature** - N-Channel - Enhancement mode - Logic Level - d _v_ /d _t_ rated - Qualified according to AEC Q101 - e • Pb-free lead plating; ROHS compliant - Halogen-free according to IEC61249-2-21 |**Product Summar**|**Product Summary**|**Product Summary**| |---|---|---| |_V_DS|60|V| |_R_DS(on)|5|Ω| |_I_D|0.2|A| **==> picture [150 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> PG-SOT-23<br>Drain<br>pin 3<br>Gate<br>pin1<br>Source<br>pin 2<br>**----- End of picture text -----**<br> |**Type**|**Package**|**Pb-free**|**Tape and Reel Information**|**Marking**| |---|---|---|---|---| |BSS7728N|PG-SOT-23|Yes|H6327: 3000pcs/reel|sSK| ## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified |**Maximum Ratingsgss**, atat_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specifiedpecifiedecified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specifiedpecifiedecified|| |---|---|---|---| |j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|0.2<br>0.16|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls|0.8|| |Reverse diode d_v_/d_t_<br>_I_S=0.2A,_V_DS=48V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs| |Gate source voltage|_V_GS|±20|V| |Power dissipation<br>_T_A=25°C|_P_tot|0.36|W| |Operatingand storage temperature|_T_j,_T_stg|-55... +150|°C| |IEC climatic category;DIN IEC 68-1|jstg|55/150/56|| |ESD Class<br>JESD22-A114-HBM||Class 0|| 2011-07-11 Page 1 Rev. 2.5 **BSS7728N** **Thermal Characteristics** **Parameter Symbol Values Unit** ~~Ter~~ **min. typ. max. Characteristics** - - Thermal resistance, junction - ambient _R_ thJA 350 K/W at minimal footprint ~~LEE~~ |**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise s<br>**Parameter**<br>**Static Characteristics**<br>~~—_—T~~|unless otherwise s<br>**Symbol**<br>~~—_—T ~~|unless otherwise specified<br>**min.**<br> ~~Se~~|ecified<br>**Values**<br>**typ.**<br>~~Se~~|**max.**<br>~~Se~~|**Unit**<br>~~Se~~| |---|---|---|---|---|---| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=250µA<br>~~|~~|_V_(BR)DSS<br>~~| ~~|60<br> ~~|~~|-<br>~~|~~|-<br>~~|~~|V| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=26µA<br>~~|]~~|_V_GS(th)<br>~~|]~~|1.3<br>~~|]~~|1.9<br>~~|]~~|2.3<br>~~|]~~|| |Zero gate voltage drain current<br>_V_DS=60V,_V_GS=0,_T_j=25°C<br>_V_DS=60V,_V_GS=0,_T_j=150°C<br>~~Bae~~<br>~~|~~|_I_DSS<br>~~Bae~~<br>~~|~~|-<br>-<br>~~Bae~~<br>~~fT~~|-<br>-<br>~~Bae~~<br>~~fT~~|0.1<br>5<br>~~Bae~~|µA| |Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>~~|~~<br>~~|~~|_I_GSS<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~fT~~|1<br>~~|~~<br>~~fT~~|10<br>~~|~~|nA| |Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.05A<br>~~|~~<br>~~|~~|_R_DS(on)<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~fT~~|4.3<br>~~fT~~|7.5|Ω| |Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.5A<br>~~|~~<br>~~|~~|_R_DS(on)<br>~~|~~<br>~~|~~<br>~~|~~<br>|~~tf~~|-<br>~~fT~~<br>~~tf~~|2.7<br>~~fT~~<br>~~tf~~|5<br>~~tf~~|| 2011-07-11 Page 2 Rev. 2.5 **BSS7728N** |**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~|**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>~~ee~~<br>~~ee el~~| |---|---|---|---|---|---|---|---|---|---|---| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime|_g_fs<br>_V_DS≥2*_I_D*_R_DS(on)max,<br>_I_D=0.16A<br>0.1<br>0.2<br>-<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>37<br>56<br>_C_oss<br>-<br>7.3<br>11<br>_C_rss<br>-<br>2.9<br>4.4<br>_t_d(on)<br>_V_DD=30V,_V_GS=10V,<br>-<br>2.7<br>4<br>~~eee~~<br>~~===>~~|||||||||S<br>pF<br>ns| |Rise time|||_t_r|||_I_D=0.2A,_R_G=6Ω|-|2.7|4.1|| |Turn-off delaytime|||_t_d(off)||||-|6.1|9.1|| |Fall time|||_t_f||||-|9|13|| |**Gate Charge Characteristics**||||||||||| |Gate to source charge|||_Q_gs|||_V_DD=48V,_I_D=0.2A|-|0.12|0.18|nC| |Gate to drain charge|||_Q_gd||||-|0.43|0.65|| |Gate charge total|||_Q_g|||_V_DD=48V,_I_D=0.2A,|-|1|1.5|| |||||||_V_GS=0 to 10V||||| |Gateplateau voltage|||_V_(plateau)|||_V_DD=48V,_I_D= 0.2 A|-|3.8|-|V| |**Reverse Diode**||||||||||| |Inverse diode continuous|||_I_S|||_T_A=25°C|-|-|0.2|A| |forward current||||||||||| |Inv. diode direct current, pulsed<br>_I_SM|||||||-|-|0.8|| |Inverse diode forward voltage|||_V_SD|||_V_GS=0,_I_F_=I_S|-|0.84|1.2|V| |Reverse recoverytime|||_t_rr|||_V_R=30V,_I_F=_l_S,|-|11.5|17.5|ns| |Reverse recoverycharge|||_Q_rr|||d_i_F/d_t_=100A/µs|-|2.6|4|nC| 2011-07-11 Page 3 Rev. 2.5 **BSS7728N** ## **1 Power dissipation** _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: _V_ GS≥ 10 V **==> picture [480 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> BSS7728N BSS7728N<br>0.38 0.22<br>W<br>PTINI TELE EET ETT A :<br>Ce = oe<br>0.32 PCC NEEL EEE PTT NEEL<br>0.18<br>PLU TNE TTT PTT TTY tT ~ LL<br>0.28 COONPENSE 0.16 LETTTPT NEE<br>0.24 PLETE TALL ET ETT TT 0.14 \<br>PENSE CENCE<br>0.12<br>0.2 PLTPEPEETT EINNEPEEE ET EEE\<br>0.1<br>0.16 PLT EN EEE<br> TET ETAL ETT LT \<br>P 0.12 ocpeeeeeereeFECEEEEEENEE FLT 0.08 ETT EET<br>[ETT] [EEK] [TT] [TI] 0.06 |<br>PET [ETT] | CCCEECEETEPNE<br>0.08<br>0.04<br>PLT ETT Ey Te tN TE<br>0.04 SEPP 0.02 EEE<br>0 PLETETEE TELE Lt IN | 0<br>0 PEEEEEEEEEEES 20 40 60 80 100 120 °C 160 =| C 0 20 40 CC 60 80 100 120 °C 160<br>— TA — TA<br>tot<br>P I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C ## **4 Transient thermal impedance** _Z_ thJA = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [486 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1 BSS7728N 10 3 BSS7728N<br>K/W<br>A<br>ne STC eT ee ne cee ee<br>10 2<br>10 0 ie t p = 33.0µs TTI CTT ETI TTT a<br> 100 µ s<br>— . PATTThier a ERT<br> 1 ms 10 1<br>-1<br>10 10 m s<br>D = 0.50<br>SS SS SS SS eS atti OR a Hil<br>10 0 0.20<br>P S | CUTIE TCT C al 0.10<br>Po LETTE Ne S S<br>10 -2 | LT ON ET CHT S S 0.05<br>10 -1 0.02<br>DC<br>0.01<br>single pulse<br>pot tT TTT TTT TT ETT AAA<br>10 -3 ell 0 1 2 10 -2 PUTT -7 -6 ETI -5 CANETTI -4 -3 ETI -2 TESTU 0<br>10 10 V 10 10 10 10 10 10 10 s 10<br>— V DS — t p<br>D<br>DS<br>DS(on)<br> / I<br>V<br> =<br>R<br>thJA<br>I D Z<br>**----- End of picture text -----**<br> 2011-07-11 Page 4 Rev. 2.5 **BSS7728N** ## **5 Typ. output characteristic** _I_ D = _f_ ( _V_ DS) parameter: _T_ j = 25 °C, _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on) = _f_ ( _I_ D) parameter: _T_ j = 25 °C, _V_ GS **==> picture [481 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 10<br>10V Ω 3.1V<br>A 7V 7 UE 3.5V<br>6V 3.7V<br>5V 8 4.1V<br>4.5V 4.5V<br>0.6<br>4.1V 5V<br>bheaa 7 ABP<br>3.7V 6V<br>0.5 3.5V 7V<br>6<br>3.1V LEP] 10V<br>0.4 5<br>Me TE PY,<br>4<br>0.3<br>tet Ye<br>3<br>0.2<br>fe see<br>2<br>0.1<br>) Zan 1<br>——— PTET rT<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8<br>VDS ID<br>ID RDS(on)<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D= _f_ ( _V_ GS ); _V_ DS≥ 2 x _I_ D x _R_ DS(on)max parameter: _T_ j = 25 °C ## **8 Typ. forward transconductance** _g_ fs = f( _I_ D) parameter: _T_ j = 25 °C **==> picture [481 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 0.4<br>S<br>A<br>PELE pt tt tt le<br>0.32<br>0.6<br>Coo = Eee<br>0.28<br>0.5 PP A TPT<br>0.24<br>0.4 PALETTE 0.2 Ep4nnne<br>0.16<br>0.3<br>CT) AZ<br>0.12<br>0.2<br>coe) | PAC 0.08<br>0.1<br>TA 0.04 Po<br>RE R DZARRanae PTET<br>0 0 TT TT<br>0 1 2 3 4 V 6 0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8<br>VGS ID<br>ID gfs<br>**----- End of picture text -----**<br> 2011-07-11 Page 5 Rev. 2.5 **BSS7728N** ## **9 Drain-source on-state resistance** ## **10 Typ. gate threshold voltage** _R_ DS(on) = _f_ ( _T_ j) _V_ GS(th) = _f_ ( _T_ j) parameter : _I_ D = 0.5 A, _V_ GS = 10 V parameter: _V_ GS = _V_ DS; _I_ D =26µA **==> picture [265 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSS7728N<br>15<br>Ω<br>“CECT<br>-CEEE EEE<br>12 -CEEEEE-CEEE EEE EE<br>11<br>10<br>9 SSS000000000-CEPE ECE<br>8<br>SEPP er<br>7<br>6 98%<br>p et-CECECC RE<br>5<br>4 Geen<br>CCRT er 7<br>3 SPP eer<br>typ<br>OEE CCP<br>2 ACEC<br>1 —CEEEELE Er<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>—_ j<br>DS(on)<br>R<br>Vgs(th)<br>**----- End of picture text -----**<br> **==> picture [227 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>:<br>~<br>98%<br>a<br>V ~<br>ay al .<br>typ.<br>1.8 oN<br>eeag<br>2%<br>Se i<br>1.3 . ><br>.<br>.<br>.<br>0.8<br>-60 -20 20 60 100 °C 160<br>—_ Tj<br>12 Forward character. of reverse diode<br>F = = f (VSD)SD))<br>parameter: T<br>j<br>10 0 BSS7728N<br>A e/ a<br>SY<br>10 -1<br>L L<br>of 10 -2 AICITEEEE<br>a a TT jj = 25 °C typ = 150 °C typ a<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 -3<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>Vgs(th)<br>I F<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** ## **12 Forward character. of reverse diode** ## _C_ = _f_ ( _V_ DS) _I_ F = = _f_ (VSD)SD)) parameter: _T_ j parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C **==> picture [225 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2<br>SS Ciss<br>pF<br>I -<br>RE CT<br>10 1 Coss<br>| ———BSS<br>Crss — | |<br>10 0<br>0 4 8 12 16 20 24 28 V 36<br>—_> VDS<br>C<br>**----- End of picture text -----**<br> 2011-07-11 Page 6 Rev. 2.5 **BSS7728N** ## **13 Typ. gate charge** _V_ GS = _f_ ( _Q_ G); parameter: _V_ DS , ## **14 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) ID = 0.5 A pulsed, _T_ j = 25 °C **==> picture [482 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSS7728N BSS7728N<br>16 72<br>V V<br>PEEEEECEEE gr HA-EE--<br>SESRR0R0R0R08)//400 ptt ti tte tT Ty<br>68<br>12 BOSSS0000000///4000 SESS eeeeeee<br>SGRSGRR0000) Ya FOE<br>66<br>10 0.2 V DS max ane 40008 SEE<br>0.5 V DS max LET AL Gannn8TTT 64 SEPPTEEPEry TAAL<br>8<br>0.8 V DS max<br>\No///ARG0nnne a Ane<br>62<br> YY SCCE<br>6 WT EC Ze<br>60<br>SRRR0///40RRRRnnnn fta TT<br>4<br>58<br>C7CCC SACS EE<br>2<br>56<br>FATGnA<br>0 PETITE TT ETTGIsTEEnssfE EE T 54 2EEEEEEEEEEPTE TPT [PTET] TE<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 nC 1.8 -60 -20 20 60 100 °C 180<br>Q G T j<br>GS (BR)DSS<br>V V<br>**----- End of picture text -----**<br> 2011-07-11 Page 7 Rev. 2.5 **BSS7728** ## **Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2011-07-11 Page 8
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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