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BSS670S2LH6327XTSA1
Power MOSFET, N Channel, 55 V, 540 mA, 0.65 ohm, SOT-23, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.346ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 360mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 540mA
- Drain Source On State Resistance: 0.65ohm
- Gate Source Threshold Voltage Max: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.055 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSS670S2L** ## **OptiMOS[] Buck converter series** ## **Feature** - • N-Channel • • Enhancement mode **•** • Logic Level • Avalanche rated[1)] • • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 * Pb-free lead plating; ROHS compliant - Halogen-free according to IEC61249-2-21 ## **Product Summary** |_V_DS|55|V| |---|---|---| |_R_DS(on)|650|mΩ| |_I_D|0.54|A| PG-SOT 23 |=<br>PoE|=<br>Yi|RoHS<br>e/<br>PyH|-F|-F|||||| |---|---|---|---|---|---|---|---|---|---| |**Type**<br>PoE <br>~~AEC?~~|Yi|**Package**<br> e/<br>Py H<br>~~® ~~|**Tape and Reel**<br>-F<br> ~~alogen-Free~~||**Marking**|Gate<br>pin1|Drain<br>pin 3<br>Source<br>~~a~~||| |BSS670S2L||PG-SOT 23||H6327: 3000 pcs/reel|BSs||||pin 2| **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified |**Maximum Ratings**, at_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|0.54<br>0.43|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls|2.2|| |Avalanche energy, single pulse ID= 0.54 A, RG= 25Ω1)|_E_AS|8.1|mJ| |Gate source voltage|_V_GS|± 20|V| |Power dissipation<br>_T_A=25°C|_P_tot|0.36|W| |Operating and storage temperature|_T_j ,_T_stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1||55/150/56|| 1) Valid from devices with date code 0604 onwards 2011-07-08 Rev. 2.5 Page 1 **BSS670S2L** **Thermal Characteristics** |**Thermal Characteristics**|||||| |---|---|---|---|---|---| |**Parameter**<br>**Characteristics**<br>~~ee ~~||**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|||| |Thermal resistance, junction - soldering point||_R_thJS|-|-<br>290|K/W| |(Pin 3)|||||| |SMD version, device on PCB:||_R_thJA|||| |@ min. footprint|||-|-<br>350|| |@ 6 cm2cooling area2)|||-|-<br>300|| |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|||||| |**Parameter**<br>**Static Characteristics**<br>~~ee~~||**Symbol**|**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~eee~~||| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=1mA<br>_V_(BR)DSS<br>55<br>-<br>-<br>Gate threshold voltage,_V_GS=_V_DS<br>_I_D=2.7µA<br>_V_GS(th)<br>1.2<br>1.6<br>2<br>Zero gate voltage drain current<br>_V_DS=55V,_V_GS=0,_T_j=25°C<br>_V_DS=55V,_V_GS=0,_T_j=150°C<br>_I_DSS<br>-<br>-<br>0.01<br>1<br>0.1<br>10<br>Gate-source leakage current<br>_V_GS=20V,_V_DS=0V<br>_I_GSS<br>-<br>1<br>100<br>Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=270mA<br>_R_DS(on)<br>-<br>430<br>825<br>Drain-source on-state resistance<br>_V_GS=10V,_I_D=270mA<br>_R_DS(on)<br>-<br>346<br>650<br>~~| |~~<br>~~|~~<br>~~| |~~<br>~~|~~<br>~~tt~~<br>~~S| tt~~<br>~~| |~~<br>~~|~~<br>~~|tt~~|||||V<br>µA<br>nA<br>mΩ| > 2) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2011-07-08 Rev. 2.5 Page 2 **BSS670S2L** **Electrical Characteristics** |**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**|**Electrical Characteristics**| |---|---|---|---|---|---|---|---| |**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS≥2*_I_D*_R_DS(on)max,<br>_I_D=0.54A<br>0.6<br>1.2<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>56<br>75<br>pF<br>Output capacitance<br>_C_oss<br>-<br>13<br>18<br>Reverse transfer capacitance<br>_C_rss<br>-<br>7<br>10<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=30V,_V_GS=4.5V,<br>-<br>9<br>14<br>ns<br>~~ee~~<br>~~eeSane~~<br>~~=a===~~|||||||| |Rise time|_t_r|_I_D=0.54A,|-||25|37|| |Turn-off delay time|_t_d(off)|_R_G=130Ω|-||21|31|| |Fall time|_t_f||-||24|32|| |**Gate Charge Characteristics**|||||||| |Gate to source charge|_Q_gs|_V_DD=40V,_I_D=0.54A|-||0.19|0.25|nC| |Gate to drain charge|_Q_gd||-||0.57|0.86|| |Gate charge total|_Q_g|_V_DD=40V,_I_D=0.54A,|-||1.7|2.26|| |||_V_GS=0 to 10V|||||| |Gate plateau voltage|_V_(plateau)|_V_DD=40V,_I_D=0.54A|-||3.1|-|V| |**Reverse Diode**|||||||| |Inverse diode continuous|_I_S|_T_A=25°C|-||-|0.38|A| |forward current|||||||| |Inv. diode direct current, pulsed|_I_SM||-||-|2.2|| |Inverse diode forward voltage|_V_SD|_V_GS=0,_I_F=0.54A|-||0.8|1.1|V| |Reverse recovery time|_t_rr|_V_R=30V,_I_F=_l_S,|-||51|64|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100A/µs|-||22|28|nC| 2011-07-08 Rev. 2.5 Page 3 **BSS670S2L** **1 Power dissipation** _P_ tot = _f_ ( _T_ A) ## **2 Drain current** _I_ D = _f_ ( _T_ A) parameter: _V_ GS≥ 10 V **==> picture [479 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSS670S2L BSS670S2L<br>0.38 0.6<br>W A<br>SEREEECEEECEEL eT<br>0.32 ECENCCELEECCLEFECAL 0.5 POPNSTENSTLEE ELLE<br>0.28 FECOACPPP TPIN EEEPPET 0.450.4 PELL LLIN\ ELLE LT<br>0.24<br>RENEEFCCC 0.35 PET ETTEENEEE LT<br>0.2<br>Ft ttt PP NEEEtT ett tt 0.3 PETIT TELLINN EET<br>ECC CeCe REE Eee .<br>ECECCCEC ATC PETE LLELTL<br>0.16 0.25<br>HA TEIN ELT<br>FCCC 0.2 PELL TL LLLEEENN EL<br>0.12<br>PCCP REL \<br>Err Xe 0.15 PLETEEET TELLIN [I<br>0.08 FRCCCCCEE EEE 0.1<br>0.04<br>See 0.05<br>0 FETE EENeo c e 0 OOOOPET ETLEELA<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>T A T A<br>tot<br>P I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C **4 Transient thermal impedance** _Z_ thJS = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [486 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1 BSS670S2L 10 3 BSS670S2L<br>K/W<br>A<br>t p = 23.0 µ s<br>10 2<br>10 0 100 µs<br> 1 m s 10 1<br> 10 ms<br>10 -1 O ST 10 0 sen Setai beeximi til a l<br>D = 0.50<br>0.20<br>10 -1 0.10<br>10 -2 0.05<br>single pulse 0.02<br>DC 10 -2 0.01<br>A Se Senet ene<br>10 -3 C n 10 -3 qt<br>10 [-1 ] 10 [0 ] 10 [1 ] V 10 [2 ] 10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>——_ » V DS ——_ » t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>thJS<br>I D Z<br>**----- End of picture text -----**<br> 2011-07-08 Rev. 2.5 Page 4 **BSS670S2L** ## **5 Typ. output characteristic** _I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 80 µs ## **6 Typ. drain-source on resistance** _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS **==> picture [480 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 3 1500<br>4.5V<br> mΩ<br>10V<br>/ ass Pi tT tT yy yy Ty<br>6V<br> A<br>5V<br>1200<br>3.5V<br>1100 4V<br>2 Lo 1000 fe 4.5V<br>5V<br>4V 900 6V<br>| Yo- | | | EECPitt ytCCeeytt | Vy<br>Wo 800 eee 10V<br>1.5<br>700<br>| rhe<br>600<br>1 3.5V 500<br>400<br>See eee<br>300<br>0.5<br>200<br>3V<br>100<br>pee Pee<br>0 pitti tt 0 FLEE T_T ET Tt] ty<br>0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.2 0.4 0.6 0.8 A 1.2<br>V DS I D<br>D DS(on)<br>I R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D= _f_ ( _V_ GS ); _V_ DS≥ 2 x _I_ D x _R_ DS(on)max parameter: _t_ p = 80 µs **8 Typ. forward transconductance** _g_ fs = f( _I_ D); _T_ j=25°C parameter: _g_ fs **==> picture [480 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 2.2<br> A S<br>Toor oe<br>1.8 1.8<br>CEREEEEAR) = Eee<br>1.6 1.6<br>CEEEEEEEAE)CEREEEEEE) = EEEEeeeer Fo<br>1.4 1.4<br>1.2 1.2<br>CEREEErAEE) = EEE<br>1 1<br>CEEEEreE) | eee<br>0.8 0.8<br>EEEEECeCE) «6 ¢ EEerr eee<br>0.6 0.6<br>FERRE EEE) | GAREREP eer<br>0.4 0.4<br>PEEP) | Eee<br>0.2 0.2<br>CEEEE ARE) © Pee<br>00 CEEEEPEEE 0.5 1 1.5 2 2.5 3 3.5 4 V 5 © E 00 0.4 EE 0.8 1.2 1.6 A 2.2<br>V GS I D<br>I D g fs<br>**----- End of picture text -----**<br> 2011-07-08 Rev. 2.5 Page 5 **BSS670S2L** ## **9 Drain-source on-state resistance** _R_ DS(on) = _f_ ( _T_ j) parameter : _I_ D = 270 mA, _V_ GS = 10 V **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSS670S2L<br>1900<br>mΩ<br>i<br>ee<br>1600<br>PPEELLELELET<br>i<br>1400 se<br>1200 aFOE<br>i<br>1000 ee<br>EECE Eee lier<br>800 EEEERC Ces 98% eee<br>600 i ee ad<br>400 PCLOL CEPT TT<br>typ<br>oe<br>EErTEOLLELe<br>200<br>FEEEELEELLee<br>0<br>-60 -20 20 60 100 °C 180<br>T j<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ = _f_ ( _V_ DS) parameter: _V_ GS=0, _f_ =1 MHz **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>pF<br>T_T<br>10 2 C iss<br>tL<br>Se<br>C oss<br>—— i<br>| 10 1 No C rss<br>ONDE)<br>a<br>10 0 | | | | ff |<br>0 5 10 15 20 V 30<br>V DS<br>C<br>**----- End of picture text -----**<br> ## **10 Typ. gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS **==> picture [226 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br> V TTT)<br>-<br>10 µA<br>S o —_<br>PSOE<br>1.5<br>——<br>2 µA<br>.<br>A Gash SS<br>1<br>0.5<br>0<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>12 Forward character. of reverse diode<br>F = = f (VSD)SD))<br>parameter: T j , tp = 80 µsp = 80 µs= 80 µs<br>10 1 BSS670S2L<br>A<br>PO<br>10 0<br>L N ea t<br>ee<br>Ho<br>10 -1 COO<br>of Ge<br>T j = 25 °C typ<br>T j = 150 °C typ<br>IK T j = 25 °C (98%) co<br>T j = 150 °C (98%)<br>10 -2 ULE LL<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>GS(th)<br>V<br>I F<br>**----- End of picture text -----**<br> ## **12 Forward character. of reverse diode** _I_ F = = _f_ (VSD)SD)) parameter: _T_ j , tp = 80 µsp = 80 µs= 80 µs 2011-07-08 Rev. 2.5 Page 6 **BSS670S2L** ## **13 Typ. gate charge** _V_ GS = _f_ ( _Q_ Gate) parameter: _I_ D = 0.54 A pulsed **==> picture [226 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSS670S2L<br>16<br>TLELELLELeLyl<br>V<br>PEPE<br>PCECEPE EIA<br>12 PFCECELLPPE PEPEL YZ<br>10 PCECELTIYALL ET<br>0,2 V DS max<br>0,8 V DS max<br>oTPCO ey<br>8<br>PCECAY7,ALLELan<br>6 FECELYZPEEVECELLET<br>4 PLAAZ_L ELE<br>FEEY7 CELE<br>FOE Eee<br>2<br>PCECEEEELELee<br>0 PCECELEELEeeee<br>0 0.4 0.8 1.2 1.6 2 nC 2.6<br>Q Gate<br>GS<br>V<br>**----- End of picture text -----**<br> ## **14 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) parameter: _I_ D=10 mA **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSS670S2L<br>66<br>TPEEELLeELoLyil<br>V<br>FEEEEEL EL<br>FEEEEEE EL<br>62 FEEEEEEFEEEEELE EL LY<br>60 FEEEEEL<br>FEEEEELEELYLYL<br>58<br>FE EEEELCEEE ALLLLL<br>56 POELPOLO<br>54 PCO AE<br>POAT<br>FA EEEL ELLE<br>52<br>PYCELELEELLELE<br>50 VECEEELELLLE<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> 2011-07-08 Rev. 2.5 Page 7 **BSS670S2L** ## **Published by** ## **Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2011-07-08 Rev. 2.5 Page 7
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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