BSS63LT1G

## BSS63LT1G, NSVBSS63LT1G 

## High Voltage Transistor **PNP Silicon** 

## **www.onsemi.com** 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 

Unique Site and Control Change Requirements; AEC−Q101 COLLECTOR 3 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE **MAXIMUM RATINGS** 2 **Rating Symbol Value Unit** EMITTER ~~i~~ Collector−Emitter Voltage VCEO −100 Vdc Collector−Emitter Voltage VCER Vdc 3 RBE = 10 k −110 Collector Current − Continuous IC −100 mAdc 1 **THERMAL CHARACTERISTICS** 2 **Characteristic Symbol Max Unit SOT−23 CASE 318** Total Device Dissipation FR−5 Board, PD mW (Note 1) TA = 25 ° C 225 **STYLE 6** Derate above 25 ° C 1.8 mW/ ° C Thermal Resistance Junction−to−Ambient R JA 556 ° C/W **MARKING DIAGRAM** ~~a~~ Total Device Dissipation PD mW Alumina Substrate, (Note 2) TA = 25 ° C 300 mW/ ° C BM M Derate above 25 ° C 2.4 Thermal Resistance, Junction−to−Ambient R JA 417 ° C/W Junction and Storage Temperature TJ, Tstg −55 to ° C +150 BM = Device Code M = Date Code* Stresses exceeding those listed in the Maximum Ratings table may damage the = Pb−Free Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) 1. FR−5 = 1.0 x 0.75 x 0.062 in. 

BM = Device Code M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] BSS63LT1G SOT−23 3000 / Tape & Reel (Pb−free) NSVBSS63LT1G SOT−23 3000 / Tape & Reel (Pb−free) ~~ff~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BSS63LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **March, 2016 − Rev. 7** 

## **BSS63LT1G, NSVBSS63LT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= −100�Adc)|V(BR)CEO|−100|−|−|Vdc|
|Collector−Emitter Breakdown Voltage<br>(IC= −10�Adc, IE= 0, RBE= 10 k�)|V(BR)CER|−110|−|−|Vdc|
|Collector−Base Breakdown Voltage<br>(IE= −10�Adc, IE= 0)|V(BR)CBO|−110|−|−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= −10�Adc)|V(BR)EBO|−6.0|−|−|Vdc|
|Collector Cutoff Current<br>(VCB= −90 Vdc, IE= 0)|ICBO|−|−|−100|nAdc|
|Collector Cutoff Current<br>(VCE= −110 Vdc, RBE= 10 k�)|ICER|−|−|−10|�Adc|
|Emitter Cutoff Current<br>(VEB= −6.0 Vdc, IC= 0)|IEBO|−|−|−200|nAdc|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= −10 mAdc, VCE= −1.0 Vdc)<br>(IC= −25 mAdc, VCE= −1.0 Vdc)|hFE|30<br>30|−<br>−|−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= −25 mAdc, IB= −2.5 mAdc)|VCE(sat)|−|−|−250|mVdc|
|Base−Emitter Saturation Voltage<br>(IC= −25 mAdc, IB= −2.5 mAdc)|VBE(sat)|−|−|−900|mVdc|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= −25 mAdc, VCE= −5.0 Vdc, f = 20 MHz)|fT|50|95|−|MHz|
|Case Capacitance<br>(IE= IC= 0, VCB= −10 Vdc, f = 1.0 MHz)|CC|−|−|20|pF|
|Noise Figure<br>(IC= −0.2 mA, VCE= −5.0 Vdc, Rg= 2 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR−5 = 1.0 � 0.75 � 0.062 in. 

2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. 

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**2** 

**BSS63LT1G, NSVBSS63LT1G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [493 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1<br>VCE = −5 V IC/IB = 10<br>150 ° C<br>25 ° C<br>−55 ° C<br>100 0.1<br>150 ° C 25 ° C<br>−55 ° C<br>10 0.01<br>0.01 0.1 1 10 100 1000 0.1 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage<br>vs. Collector Current<br>1.1 1.0<br>1.0 IC/IB = 10 VCE = −5 V<br>0.9<br>0.9 −55 ° C 0.8 −55 ° C<br>0.8<br>0.7 25 ° C 0.7 25 ° C<br>0.6 0.6<br>0.5<br>150 ° C 0.5<br>0.4<br>0.4 150 ° C<br>0.3<br>0.3<br>0.2<br>0.1 0.2<br>1 10 100 1000 1 10 100 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Base−Emitter Saturation Voltage vs. Figure 4. Base−Emitter Voltage vs. Collector<br>Collector Current Current<br>2.6 1.0<br>IC/IB = 10 0.9 TA = 25 ° C<br>2.4<br>TA = −55 ° C to 150 ° C 0.8<br>2.2<br>0.7<br>2.0<br>0.6<br>1.8 0.5<br>0.4<br>1.6<br>50 mA<br>0.3<br>1.4 20 mA 100 mA IC = 200 mA<br>0.2<br>1.2<br>0.1<br>IC = 10 mA<br>1.0 0<br>0.1 1 10 100 1000 0.01 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN , COLLECTOR−EMITTER<br>FE<br>h<br>SATURATION VOLTAGE (V)<br>CE(sat)<br>V<br>VOLTAGE (V) VOLTAGE (V)<br>, BASE−EMITTER SATURATION , BASE−EMITTER SATURATION<br>BE(sat) BE(sat)<br>V V<br>C)<br>°<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>, TEMPERATURE COEFFICIENT (mV/<br>CE<br>VBE V<br>�<br>**----- End of picture text -----**<br>


**Figure 5. Base−Emitter Temperature Coefficient** 

**Figure 6. Collector Saturation Region** 

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**3** 

**BSS63LT1G, NSVBSS63LT1G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 1000<br>Cibo TJ = 25 ° C VCE = −5 V<br>TJ = 25 ° C<br>100<br>Cobo<br>10<br>10<br>1 1<br>0.1 0.2 0.40.6 1 2 4 6 10 20 40 60 100 0.1 0.2 0.5 1 2 5 10 20 50 100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Figure 7. Capacitance Figure 8. Current−Gain Bandwidth Product<br>1000<br>10 ms<br>100 100  � s<br>1 s<br>10<br>1<br>Single Pulse Test at TA = 25 ° C<br>0.1<br>0.1 1 10 100 1000<br>VCE, COLLECTOR EMITTER VOLTAGE (V)<br>PRODUCT (MHz)<br>C, CAPACITANCE (pF)<br>CURRENT−GAIN BANDWIDTH<br>, COLLECTOR CURRENT (mA)<br>IC<br>**----- End of picture text -----**<br>


**Figure 9. Safe Operating Area** 

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**4** 

**BSS63LT1G, NSVBSS63LT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AP 

- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 

**==> picture [461 x 362] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|D|2.|CONTROLLING DIMENSION: INCH.|
|3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH|
|SEE VIEW C|THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM|
|3|THICKNESS OF BASE MATERIAL.|
|4.|DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,|
|PROTRUSIONS, OR GATE BURRS.|
|E|HE|MILLIMETERS|INCHES|
|DIM|MIN|NOM|MAX|MIN|NOM|MAX|
|A|0.89|1.00|1.11|0.035|0.040|0.044|
|c|
|A1|0.01|0.06|0.10|0.001|0.002|0.004|
|1|2|
|b|0.37|0.44|0.50|0.015|0.018|0.020|
|b|c|0.09|0.13|0.18|0.003|0.005|0.007|
|e|0.25|D|2.80|2.90|3.04|0.110|0.114|0.120|
|E|1.20|1.30|1.40|0.047|0.051|0.055|
|e|1.78|1.90|2.04|0.070|0.075|0.081|
|L|0.10|0.20|0.30|0.004|0.008|0.012|
|L1|0.35|0.54|0.69|0.014|0.021|0.029|
|A|H|E|2.10|2.40|2.64|0.083|0.094|0.104|
|0|°|−−−|10|°|0|°|−−−|10|°|
|L|
|A1|STYLE 6:|
|L1|PIN 1.|BASE|
|2.|EMITTER|
|VIEW C|3.|COLLECTOR|
|SOLDERING FOOTPRINT*|
|0.95|
|0.037|
|0.95|
|0.037|
|2.0|
|0.079|
|0.9|
|0.035|
|0.8|
|0.031|-|~|
|SCALE 10:1|mm|
|(—)|inches|

**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **LITERATURE FULFILLMENT** : 

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**BSS63LT1/D** 

**5**