BSS225H6327FTSA1

Type ~~Ci~~ nfi 

**BSS225** 

## **SIPMOS[®] Small-Signal-Transistor** 

## **Feature** 

- n-channel 

- enhancement mode 

## **Product Summary** 

|_V_DS<br>1)|1)||600|||V|
|---|---|---|---|---|---|---|
|_R_DS(on),max|||45|||Ω|
||||||||
|_I_D|||0.09|||A|



- Logic level 

- d _v_ /d _t_ rated 

- Qualified according to AEC Q101 

- Halogen­free according to IEC61249­2­21 

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SOT89<br>**----- End of picture text -----**<br>


||||||
|---|---|---|---|---|
|**Type**|**Package**|**Pb-free**|**Tape and Reel Information**|**Marking**|
||||||
|BSS225|SOT89|Yes|H6327: 3000PCS/reel|KD|



**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D|_T_A=25 °C|0.09<br>A<br>0.073<br>0.36|A|
|||_T_A=70 °C|||
|Pulsed drain current|_I_D,pulse|_T_A=25 °C|||
|Reverse diode d_v_/d_t_|d_v_/d_t_|_I_D=0.09 A,<br>_V_DS=480 V,<br>d_i_/d_t_=200 A/µs,<br>_T_j,max=150 °C|6<br>kV/µs|kV/µs|
|Gate source voltage|_V_GS||±20<br>V|V|
|ESDClass<br>JESD22­A114­HBM|JESD22­A114­HBM|JESD22­A114­HBM|JESD22­A114­HBMClass 1a||
|Power dissipation|_P_tot|_T_A=25 °C|1.00<br>W|W|
|Operating and storage temperature|_T_j,_T_stg||-55 ... 150<br>°C|°C|
|IEC climatic category; DIN IEC 68-1|||55/150/56||



2015-02-23 

Rev. 1.28 

page 1 

|||||**BSS225**|
|---|---|---|---|---|
|**Parameter**<br>**Thermal characteristics**<br>~~ee~~|||**Symbol **|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|
|Thermal resistance,<br>junction - minimal footprint<br>_R_thJA<br>-<br>-<br>125<br>K/W<br>~~ee~~<br>~~ee~~|||||
||**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified|



|**Static characteristics**|||||||
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage1)|_V_(BR)DSS|_V_GS=0 V,_I_D=250 µA|600|-|-|V|
|Gate threshold voltage|_V_GS(th)|_V DS =V GS ; ID=94 µA_|1.3|1.9|2.3||
|Drain-source leakage current|_I_D (off)|_V_DS=600 V,_V_GS=0 V,<br>_T_j=25 °C|-|-|0.1|µA|
|||_V_DS=600 V,_V_GS=0 V,<br>_T_j=150 °C|-|-|5||
|Gate-source leakage current|_I_GSS|_V_GS=20 V,_V_DS=0 V|-|10|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=4.5 V,_I_D=0.09 A|-|30|45|W|
|||_V_GS=10 V,_I_D=0.09 A|-|28|45||
|Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=0.075 A|0.05|0.14|-|S|



1) VDS is zero-hour rated, see note at p.8 

Rev. 1.28 

page 2 

2015-02-23 

**BSS225 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics** Input capacitance _C_ iss - 99 131 pF Output capacitance _C_ oss _V_ GS=0 V, _V_ DS=25 V, - 7.6 11 _f_ =1 MHz Reverse transfer capacitance Crss - 3.1 4.4 Turn-on delay time _t_ d(on) - 14.0 20.0 ns Rise time _t_ r _V_ DD=300 V, - 38.0 57.0 _V_ GS=10 V, _I_ D=0.09 A, Turn-off delay time _t_ d(off) _R_ G=6 Ω - 62.0 93 Fall time _t_ f - 41.0 62 ~~=f~~ Gate Charge Characteristics Gate to source charge _Q_ gs - 0.32 0.43 nC Gate to drain charge _Q_ gd _V_ DD=400 V, - 1.4 2.1 _I_ D=0.09 A, Gate charge total _Q_ g _V_ GS=0 to 10 V - 3.9 5.8 Gate plateau voltage _V_ plateau - 3.3 - V **Reverse Diode** ~~==~~ Diode continous forward current _I_ S ~~EE~~ - - 0.09 A _T_ A=25 °C Diode pulse current _I_ S,pulse - - 0.36 _V_ GS=0 V, _I_ F=0.09 A, Diode forward voltage _V_ SD - 0.75 1.2 V _T_ j=25 °C Reverse recovery time _t_ rr _V_ R=300 V, _I_ F=0.09 A, - 246 370 ns Reverse recovery charge _Q_ rr d _i_ F/d _t_ =100 A/µs - 248 373 nC ~~cere~~ 8 page 3 2015-02-23 

2015-02-23 

Rev. 1.28 

**BSS225** 

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1 Power dissipation<br>**----- End of picture text -----**<br>


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P  tot=f( T  A)<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_I_ D=f( _T_ A); _V_ GS≥10 V 

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0.1<br>1<br>0.08<br>0.75<br>0.06<br>0.5<br>0.04<br>0.25<br>0.02<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T  A [°C] T  A [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I  D=f( V  DS);  T  A=25 °C;  D  =0 Z  thJA=f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>10 [0] 10 [3]<br>20 µs<br>limited by on-state<br>resistance<br>100 µs 10 [2]<br>0.5<br>10 [-1] 1 ms<br>0.2<br>0.1<br>10 [1]<br>0.05<br>1000 ms<br>0.02<br>0.01<br>10 [0]<br>DC<br>single pulse<br>10 [-3] Alii 10 [-1]<br>1 10 100 1000 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V  DS [V] t  p [s]<br>8 2015-02-23<br> [W]  [A]<br>P  tot I  D<br> [A]  [K/W]<br>I  D<br> thJA<br>Z<br>**----- End of picture text -----**<br>


Rev. 1.28 

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**BSS225** 

**5 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS 

## **6 Typ. drain-source on resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

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2.6 V3 V 3.2 V 3.6 V 3.8 V 4 V<br>0.3 40<br>V 10 V 5<br>38 5 V<br>0.25 V 4<br>36<br>10 V<br>34<br>0.2 V 3.8<br>32<br>0.15 V 3.6 30<br>28<br>0.1<br>V 3.2 26<br>V 3 24<br>0.05<br>22<br>V 2.6<br>0 20<br>0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4<br>V  DS [V] I  D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I  D=f( V  GS); | V  DS|>2| I  D| R  DS(on)max g  fs=f( I  D);  T  j=25 °C<br>0.3 0.3<br>0.25<br>0.2 0.2<br>0.15<br>0.1 0.1<br>0.05<br>0 a 0<br>0 1 2 3 4 0.00 0.10 0.20 0.30<br>V  GS [V] I  D [A]<br>8 page 5 2015-02-23<br>]<br>Ω<br> [A]  [<br>I  D<br> DS(on)<br>R<br> [A]  [S]<br>I  D g  fs<br>**----- End of picture text -----**<br>


Rev. 1.28 

**BSS225** 

## **9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=0.1 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ DS=VGS; _I_ D=94 µA parameter: _I_ D 

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130 2.8<br>120<br>110 2.4<br> %98<br>100<br>2<br>90<br>80<br>typ<br>1.6<br>70<br>60<br> %2<br> %98 1.2<br>50<br>40<br>0.8<br>30 typ<br>20<br>0.4<br>10<br>0 0<br>-60 -20 20 60 100 140 -60 -20 20 60 100 140<br>T  j [°C] T  j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br>C  =f( V  DS);  V  GS=0 V;  f  =1 MHz; Tj=25°C I  F=f( V  SD)<br>parameter:  T  j<br>10 [3] 10 [0]<br>150 °C 25  ° C<br>150 °C, 98%<br>10 [2] Ciss 10 [-1]<br>25 °C, 98%<br>10 [1] 10 [-2]<br>Coss<br>Crss<br>10 [0] =i 10 [-3]<br>0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2 2.4 2.8<br>V  DS [V] V  SD [V]<br>Rev. 1.28 page 6 2015-02-23<br>a<br>]<br>[ Ω<br> [V]<br> DS(on)  GS(th)<br>R V<br>C   [pF] I  [A] F<br>**----- End of picture text -----**<br>


**BSS225** 

**13 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=0.1 A pulsed parameter: _V_ DD 

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12<br>300 V<br>10<br>8<br>120 V 480 V<br>6<br>We<br>4<br>2<br>0 cea<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>Q  gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br>


## **14 Drain-source breakdown voltage** 

_V_ BR(DSS)=f( _T_ j); _I_ D=250 µA 

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700<br>680<br>660<br>640<br>620<br>600<br>580<br>560<br>540<br>520<br>500<br>-60 -20 20 60 100 140<br>T  j [°C]<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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Rev. 1.28 

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**BSS225** 

**Package Outline:** 

**Footprint:** 

**Packaging:** 

Dimensions in mm 

## _note:_ 

Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. Values given in this document are only valid for 0 hour lifetime, if no suitable external protection is applied. 

2015-02-23 

Rev. 1.28 

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**BSS225** 

## **Published by** 

## **Infineon Technologies AG** 

**81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

2015-02-23 

Rev. 1.28 

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