Image not available
Illustrative purposes only
BSS192PH6327FTSA1
Power MOSFET, P Channel, 250 V, 190 mA, 12 ohm, SOT-89, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):7.7ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 1W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-89
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 190mA
- Drain Source On State Resistance: 12ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.157 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSS192P** ## **SIPMOS[] Small-Signal-Transistor** ## **Feature** - P-Channel - Enhancement mode - Logic Level - d _v_ /d _t_ rated - Qualified according to AEC Q101 - Halogenfree according to IEC61249221 **==> picture [186 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |Product Summary| |V|DS|-250|V| |R|12|Ω| |DS(on)| |I|D|-0.19|A| |PG-SOT89| |Drain|1| |pin 2|2| |3| |Gate| |pin1| |Source| |2| |pin 3| |VPS05162| **----- End of picture text -----**<br> **==> picture [486 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Type|Package|Pb-free|Tape and Reel Information|Marking| |BSS 192 P|PG-SOT89|Yes|H6327: 1000 pcs/reel|KC| **----- End of picture text -----**<br> ## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified **==> picture [485 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Parameter|Symbol|Value|Unit| |Continuous drain current|I|D|A| |T|A=25°C|-0.19| |T|A=70°C|-0.1| |Pulsed drain current|I|-0.76| |D puls| |T|A=25°C| |Reverse diode d|v|/d|t|d|v|/d|t|6|kV/µs| |I|S=-0.19A,|V|DS=-200V, d|i|/d|t|=-200A/µs,|T|jmax=150°C| |Gate source voltage|V|GS|±20|V| |Power dissipation|P|tot|1|W| |T|A=25°C| |Operating and storage temperature|T|j ,|T|stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|55/150/56| |ESD Class| |Class 1a| |JESD22-A114-HBM| **----- End of picture text -----**<br> 2012-12-03 Rev 1.7 Page 1 **BSS 192 P** **Thermal Characteristics** **Parameter Symbol Values Unit min. typ. max.** ~~ee~~ **Characteristics** ~~ee~~ - - Thermal resistance, junction - soldering point _R_ thJS 10 K/W (Pin 2) - - ~~a~~ Thermal resistance, junction - ambient, leaded _R_ thJA 125 |Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>||_V_(BR)DSS<br>po}<br>|||-250<br>po}tf<br>tt|-<br>tf<br>tt|-<br>tf<br>tt|V| |---|---|---|---|---|---| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-130µA<br>||_V_GS(th)<br>po}<br>|||-1<br>po} tf<br>tt|-1.5<br>tf<br>tt|-2<br>tf<br>tt|| |Zero gate voltage drain current<br>_V_DS=-250V,_V_GS=0,_T_j=25°C<br>_V_DS=-250V,_V_GS=0,_T_j=150°C<br>|<br>||_I_DSS<br>| |<br>ett<br>|<br>||-<br>-<br>tt<br>ett<br>tf|-0.1<br>-10<br>tt<br>ett<br>tf|-0.2<br>-100<br>tt<br>ett<br>tf|µA| |Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>|<br>||_I_GSS<br>|<br>|<br>|<br>||-<br>tf<br>tf|-10<br>tf<br>tf|-100<br>tf<br>tf|nA| |Drain-source on-state resistance<br>_V_GS=-2.8V,_I_D=-0.025A<br>|<br>|<br>||_R_DS(on)<br>|<br>|<br>|<br>|<br>|||-<br>tf<br>tf<br>tt|10<br>tf<br>tf<br>tt|20<br>tf<br>tf<br>tt|Ω| |Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.1A<br>|<br>||_R_DS(on)<br>|<br>|<br>|||-<br>tf<br>tt|8.3<br>tf<br>tt|15<br>tf<br>tt|| |Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.19A<br>||_R_DS(on)<br>| |<br>||-<br>tt<br> tt|7.7<br>tt<br>tt|12<br>tt<br>tt|| 2012-12-03 Rev 1.7 Page 2 **BSS 192 P** |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Dynamic Characteristics**<br>~~ee~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Dynamic Characteristics**<br>~~ee~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Dynamic Characteristics**<br>~~ee~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Dynamic Characteristics**<br>~~ee~~|= 25 °C, unless otherwise specified<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~el~~|= 25 °C, unless otherwise specified<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~el~~|= 25 °C, unless otherwise specified<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~el~~|= 25 °C, unless otherwise specified<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~el~~|= 25 °C, unless otherwise specified<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~el~~| |---|---|---|---|---|---|---|---|---| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time|_g_fs<br>|_V_DS|≥2*|_I_D|*_R_DS(on)max ,<br>_I_D=-0.1A<br>0.19<br>0.38<br>-<br>_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>83<br>104<br>_C_oss<br>-<br>13<br>16<br>_C_rss<br>-<br>6<br>8<br>_t_d(on)<br>_V_DD=-125V,_V_GS=-10V,<br>-<br>4.7<br>7<br>oonne<br>=—_===|||||||S<br>pF<br>ns| |Rise time||_t_r||_I_D=-0.19A,_R_G=2Ω|-|5.2|8|| |Turn-off delay time||_t_d(off)|||-|72|108|| |Fall time||_t_f|||-|50|75|| |**Gate Charge Characteristics**||||||||| |Gate to source charge||_Q_gs||_V_DD=-200V,_I_D=-0.19A|-|-0.2|-0.25|nC| |Gate to drain charge||_Q_gd|||-|-1.9|-2.4|| |Gate charge total||_Q_g||_V_DD=-200V,_I_D=-0.19A,|-|-4.9|-6.1|| |||||_V_GS=0 to -10V||||| |Gate plateau voltage||_V_(plateau)||_V_DD=-200V,_I_D=-0.19A|-|-2.63|-|V| |**Reverse Diode**||||||||| |Inverse diode continuous||_I_S||_T_A=25°C|-|-|-0.19|A| |forward current||||||||| |Inv. diode direct current, pulsed||_I_SM|||-|-|-0.76|| |Inverse diode forward voltage||_V_SD||_V_GS=0,_I_F=-0.19A|-|-0.78|-1.1|V| |Reverse recovery time||_t_rr||_V_R=-125V,_I_F=_l_S,|-|46|57|ns| |Reverse recovery charge||_Q_rr||d_i_F/d_t_=100A/µs|-|72|90|nC| 2012-12-03 Rev 1.7 Page 3 **BSS 192 P** ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS| ≥ 10V **==> picture [472 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSS 192 P BSS 192 P<br>1.1 -0.2<br>W PEELE EEL A S PP EERE EEERE EEE EEE EEE<br>0.9 PEPE\ LLL LLLLLLLL -0.16 PTPEEPCEES ENE EERETENETEEE EET EETEEEPEEPCEES ENE EERETENETEEE EET EETEEECEES ENE EERETENETEEE EET EETEEE E E T<br>CCN EET TET TET<br>0.8<br>-0.14<br>PTET TN \ LLL ECCPe E E E TCCECEIN NCCEEECCECEIN NCCEEEEIN NCCEEE NCCEEEEE TE<br>0.7<br>\ -0.12 Pe [[EET]]<br>PLELELN ELLE FCEEEECEEEKEEEELyNyN EEE<br>0.6<br>-0.1<br>0.5 COCOONS)\ -0.08 FEERPeNEEETPeNEEETNEEET E EEEEEENEEEEEEE<br>COON IN ET<br>0.4<br>CCN -0.06 Pe EET EET Ey ET EVE<br>0.3<br>\ SeSSGSS000008\\0<br>PET TLL LLL TING -0.04 PeFCCCCE EETFCCCCE EET EET E EECEEETECEEETEET EEONON<br>0.2<br>0.1 PEELE ELIA\ -0.02 PeC TeyC Tey Tey E E EETE EEE EE EE<br>0 \ 0 PE EEE EEE TEEPE EET EET EET EET EET<br>0 COCCECCCEEECEPSD) 20 40 60 80 100 120 °C 160 = 0 EEEEEEEEEEEEEES 20 40 60 80 100 120 °C<br>— T A — T A<br>tot<br>P I D<br>**----- End of picture text -----**<br> **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSS 192 P<br>-0.2<br>A S PP EERE EEERE EEE EEE EEE<br> ENE EERETENETEEE EET EETEEE EERETENETEEE EET EETEEETENETEEE EET EETEEEEEE EET EETEEE EET EETEEEEEE E E T<br>-0.16<br>PTPEEPCEES ENE EERETENETEEE EET EETEEEPEEPCEES ENE EERETENETEEE EET EETEEECEES ENE EERETENETEEE EET EETEEE<br>EET TET TET<br>-0.14<br>Pe EECCPe E E E TCCECEIN NCCEEECCECEIN NCCEEEEIN NCCEEE NCCEEEEE TE<br>-0.12 Pe [[EET]]<br>FCEEEECEEEKEEEELyNyN EEE<br>-0.1<br>EET E EEEEEENEEEEEEE<br>-0.08 FEERPeNEEETPeNEEETNEEET<br>IN ET<br>-0.06 Pe EET EET Ey ET EVE<br>SeSSGSS000008\\0<br>-0.04 PeFCCCCE EETFCCCCE EET EET E EECEEETECEEETEET EEONON<br>-0.02 PeC TeyC Tey Tey E E EETE EEE EE EE<br>0 PE EEE EEE TEEPE EET EET EET EET EET<br>0 EEEEEEEEEEEEEES 20 40 60 80 100 120 °C 160<br>— T A<br>D<br>I<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25°C ## **4 Transient thermal impedance** _Z_ thJA = _f_ ( _t_ p) ## parameter : _D_ = _t_ p/ _T_ **==> picture [487 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> -10 1 BSS 192 P 10 3 BSS 192 P<br>K/W<br>A e e 10 2 ec C e<br>-10 0 ee t p = 240.0µs Seis eiiiimetiiiemeaiiimetiiiemaatiticee<br>pe a 10 1 A SR a al<br> 1 ms<br>L_-Crn FC CETIN NT EHSEPT<br>ill 10 0 SCL Lee CUTMICLTU<br>A tT Nal 10 ms PHT PS eS TTI UTIL<br>-10 -1<br>——a 7A LPT TTT INSTANT TST D = 0.50 MM)<br>ee Ae 10 -1 LTTE TUTTI iit AUTNING Uf<br>= a SS SS SSeS es SSE Ses 0.20 FEES<br>ETCHINGN ETT | Sail sent!SeteSethi 0.10 Sea<br>-10 -2 a a | 10 -2 A Wi OYNSS Th 0.05<br>0.02<br>a a aS HH<br>-3 0.01<br>Seen Ac nc DC 10 Ao single pulse Hen<br>-10 -3 PY TVA TP ETAINE TETAINE TTELTT 10 -4 COOYETI ELVINCo LETi TUTTIoo ETIon VEIT-on<br>-10 [-1 ] -10 [0 ] -10 [1 ] -10 [2 ] V -10 [3 ] 10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>—_ V DS ——_ t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br> 2012-12-03 Rev 1.7 Page 4 **BSS 192 P** ## **5 Typ. output characteristic** ## **6 Typ. drain-source on resistance** _I_ D = _f_ ( _V_ DS) _R_ DS(on) = _f_ ( _I_ D) parameter: _T_ j =25°C, - _V_ GS parameter: _V_ GS; _T_ j =25°C, - _V_ GS **==> picture [480 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 15<br>10V<br>Ω 2.4V 2.6V 2.8V 3.2V<br>6V<br>A<br>4.6V<br>4V 12<br>3.6V<br>0.5 3.4V TS 10.5<br>3.2V<br>2.8V<br>2.6V 9<br>0.4 I) GZEAzze—<br>2.4V<br>7.5<br>10V<br>0.3 yAo 6V<br>6<br>4.6V<br>4V<br>4.5<br>0.2 3.6V<br>3.4V<br>3<br>0.1<br>ya eee<br>1.5<br>ALLE ELLLL Goer<br>0 0<br>0 1 2 3 4 5 6 7 8 V 10 0 0.1 0.2 0.3 0.4 0.5 A 0.7<br>- V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); | ); | V DS|≥ 2 x |≥ 2 x | 2 x | I D| x | x R DS(on)max g fs = f( I D)<br>parameter: T j = 25 °C = 25 °C parameter: T j =25°C<br>0.7 0.8<br>S<br>A<br>Ease CT] Laer<br>0.6<br>HEHE Ea 2aae<br>0.5<br>0.5<br>coor} TTYL<br>0.4<br>0.4<br>FLL AA<br>0.3<br>ey vecenen<br>0.3<br>0.2<br>PCT! fg<br>0.2<br>0.1 tL PELE<br>aaa 0.1 PEEL<br>0 0<br>0 0.5 1 1.5 2 2.5 V 3.5 0 0.1 0.2 0.3 0.4 0.5 A 0.7<br>- V GS - I D<br>D DS(on)<br>I - R<br>I D- g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D== _f_ ( _V_ GS ); | ); | _V_ DS|≥ 2 x |≥ 2 x | 2 x | _I_ D| x | x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C 2012-12-03 Rev 1.7 Page 5 **BSS 192 P** ## **9 Drain-source on-state resistance** ## **10 Typ. gate threshold voltage** _R_ DS(on) = _f_ ( _T_ j) _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS parameter : _I_ D = -0.19 A, _V_ GS = -10 V **==> picture [479 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> BSS 192 P<br>32 2.2<br>Ω PCCFCLCECCECeeoELELELILLE V ITITTTT TTT).<br>98%<br>Cee RC<br>PCCELeEEe 1.8<br>24<br>PCE ee<br> Peer eer mT}<br>1.6<br>PCCECCECee | | | | PMS |<br>20<br>typ.<br>FEC eo ELSE~S~S LLL<br>1.4<br>16<br>ECCECCELPE TTT PRAT<br>98% 1.2<br>12<br>t Seeegs7HEEEREECRRHanne ot PREECE>><br>COEET Lee 1 ~ 2%<br>8 typ<br>0.8<br>peCOE ep Th OOCoeeoe et -<br>4 Rd Py TEL | Ty<br>0.6<br>Ft TAL<br>PCCELC tt tT E T Leelt ELT TET TTY PET PET<br>0 0.4<br>-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C<br>T T<br>—_ j —_ j<br>11 Typ. capacitances 12 Forward character. of reverse diode<br> = f ( V DS)) I F = f (VSD)<br>parameter: V GS=0, =0, f =1 MHz, T parameter: T<br>j = 25 °C j<br>10 3 -10 0 BSS 192 P<br>pF A<br>FERRE CEE EEE ne<br>C iss<br>PCCP Oo Bent<br>10 2 -10 -1<br>NERRRRRE SEE LUWZALLLey GGnnn8EeLL EL<br>C oss<br>Ro oo FECHA EEE<br>| 10 1 We aa -10 -2 COICO<br>DONTE of COATT<br>T j = 25 °C typ<br>=———=——__———— === T j = 150 °C typ ==<br>HERE EEEEESEE C rss oe T j = 25 °C (98%) ==<br>T j = 150 °C (98%)<br>10 0 PILLPrPPPr ELLE ye ELLoe -10 -3 T “lk. e LL<br>0 6 12 18 24 V 36 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>- V DS V SD<br>DS(on) V GS(th)<br>R -<br>F<br>C I<br>**----- End of picture text -----**<br> **==> picture [227 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>V<br>ITITTTT TTT).<br>98%<br>RC<br>1.8 mT}<br>1.6<br>| | | | PMS |<br>typ.<br>ELSE~S~S LLL<br>1.4<br>TTT PRAT<br>1.2<br>ot PREECE>><br>1 ~ 2%<br>0.8<br>et<br>-<br>Py TEL | Ty<br>0.6<br>TAL<br>TET TTY PET PET<br>0.4<br>-60 -20 20 60 100 °C 160<br>T<br>—_ j<br>GS(th)<br>V<br>-<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ = _f_ ( _V_ DS)) parameter: _V_ GS=0, =0, _f_ =1 MHz, _T_ j = 25 °C 2012-12-03 Rev 1.7 Page 6 **BSS 192 P** ## **13 Typ. gate charge** ## _V_ GS = _f_ ( _Q_ Gate) ## **14 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) ## parameter: _I_ D = -0.19 A pulsed, _T_ j = 25 °C **==> picture [482 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> BSS 192 P BSS 192 P<br>-16 TTLLLELLIELLELTLL -300 V<br>V<br>FCCLA SEEeEGeEneee<br>FCLELLELLL AA TOO EE Eee<br>-285<br>-12 FCO ee CECE<br>-280<br>FCCLA ET<br>YF TEE<br>-275<br>PEPE AT<br>-10 EEA eee<br>-270<br>POCA AZ SEE AA<br>-265<br>-8 20%<br>SnD /Zqnnneen -260 A.<br>50%<br>Nene //susnna -255 EPP A<br>-6 SA PPE A<br>80%<br>-250<br>-4 N MWYY -245 PEPPit cAAtt te<br>PLA LELELLLLL -240 Pi iv tt tt ty yy<br>-2 -235<br>PREECE AACE<br>-230<br>0 COOEELELLELLL -225 PEELELLLELLELL<br>0 1 2 3 4 5 6 nC 7.5 -60 -20 20 60 100 °C 180<br>|Q G | T j<br>GS (BR)DSS<br>V V<br>**----- End of picture text -----**<br> 2012-12-03 Rev 1.7 Page 7 **BSS 192 P** 2012-12-03 Rev 1.7 Page 8
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →