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BSS169IXTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 2.9 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 360mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 190mA
- Drain Source On State Resistance: 2.9ohm
- Gate Source Threshold Voltage Max: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.073 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
BSS169I **==> picture [109 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> om<br>Cinfineone@<br>**----- End of picture text -----**<br> ## Small ~~-S~~ ignal Transistor ## Features - ¢ N ~~-~~ channel - Depletion mode - dv/dt rated - ¢ Pb ~~-f~~ ree lead-plating; ROHS compliant ¢ Halogen ~~-f~~ ree according to AEC61249- ~~2-2~~ 1 **==> picture [63 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> PG - SOT23 -3<br>3<br>]<br>1<br>I~<br>_<br>**----- End of picture text -----**<br> ## Product validation Fully qualified according to JEDEC for Industrial Applications ## ~~Table 1 _ Key Performance Parameters~~ **==> picture [13 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> m in s<br>**----- End of picture text -----**<br> ESD Sensitivity, **==> picture [84 x 36] intentionally omitted <==** **----- Start of picture text -----**<br> @ ROHS<br>**----- End of picture text -----**<br> Final Data Sheet 1 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 **==> picture [121 x 53] intentionally omitted <==** **==> picture [167 x 165] intentionally omitted <==** Small ~~-S~~ ignal ~~BSS169I Transistor~~ Tnfit ~~C~~ in neon ; 1 Maximum ratings at Ta=25 °C, unless otherwise specified **==> picture [542 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |Table|2_—/|Maximum|ratings| |m|aramet|er|Symbol,ymbo|Min.||aeTyp.|[Max._|it|Noote /||TeTe t|s|t|ConditionCondit| |.|.|0.19|Ta=25|°C| |j,max—19|2h (Gsn20|WV,|dildit=200|Alus,| |Reverse|diode|dvidt|dvidt|-|be|||Vis||2-0.| **----- End of picture text -----**<br> ~~cecteatemnerenin (nTe (eeSSE~~ ## 2 Thermal characteristics **==> picture [528 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Table|3_—|Thermal|characteristics| |p|aramet|er|symbol,ymbo|Min,aeTyp.|[Max.nit||N|o|te|I/|TeTe t|s|t|ConditionCondit| |Thermal|resistance,|junction|-|ambient,| |3|Electrical|characteristics| |at|Tj=25|°C,|unless|otherwise|specified| |Table|4|Static|characteristics| |p|aramet|er|Symbol,ymbo|Min,aeTyp.|[Max.||it|Noote||/|TeTe t|s|t|ConditionCondit| |Drain-source|breakdown|voltage|[Veross|[100||-||-||v|Ves=-10|V,|Ip=250|YA| |Gate|threshold|voltage|Vos=3|V,|Ipb=50|YA| |Drain|-|source|cutoff current|a|a|e|9|v= 4100 vy Ven|t|o yr ra495So| |Gate-source|leakage|current|less|see|10|[nc|Ves=20|V,|Vos=0|V| |On-state|drain|current|loss|«goss|mak|Ves=0|V,|Vos=10|V| |Drain-source|on-state|resistance|osm|||oe|VestOW|e019.|[A]| |Transconductance|lo|=e|soo|-|s||Vos|>2|/o|Ros(onymax,|[p=0.15|A| **----- End of picture text -----**<br> Final Data Sheet 3 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 Small ~~-S~~ ignal Transistor BSS169I CiT **n** fitneon ; **==> picture [539 x 490] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Table|5|Dynamic|characteristics| |Parameter|Symbol|Min.|||T|wa|Note|/|Test|Condition| |Input|capacitance|css|fe|te|p|Ves=-10|V,|Vos=25|V,|H1|MHz| |Output|capacitance|Coss|sep|Ves=-10|V,|Vos=25|V,|H1|MHz| |Reverse|transfer|capacitance|Ce|ee|eae|Ves=-10|V,|Vos=25|V,|1|MHz| |.|Vpp=50|V,|Ves=|-|3|to|7|V,|Ip=0|.|12|A,| |ae|Voo=50|V,|Ves=|-|3|to|7|V,|In=0|.|12|A,| |.|Vop=50|V,|Ves=-3|to|7|V,|[Ip=]|[0]|[.12]|A,| |.|Vop=50|V,|Ves=|-|3|to|7|V,|Ip=0|.|12|A,| |Table|6|Gate|charge|characteristics| |Parameter|Symbol|Min.|T|a|en|Note|/|Test|Condition| |Gate|to|source|charge|las|se|sftot2||e|[nc|Vpp=80|V,|Ip=0.12|A,|Vcs=-3|to|7|V| |Gate|to|drain|charge|las|ss eso|fe|[nc|Voo=80|V,|Ip=0.12|A,|Ves=-3|to|7|V| |Gate|charge|total|la|eft|En|Vop=80|V,|Ip=0.12|A,|Ves=-3|to|7|V| |Gate|plateau|voltage|Veatew|f-|—s*|(0.43|[-|fv|Vpp=80|V,|Ip=0.12|A,|Vcs=-3|to|7|V| |Table|7|Reverse|diode| |Parameter|Symbol|Min.|||T|a|OO|Note|/|Test|Condition| |Diode|continous|forward|current|Ws|ee|fort|fa|Ta=25|°C| |Diode|forward|voltage|Veo|ssf-—*014|.|2|82|V__|||Ves=-10V,|r=0.19|A,|T=25|°C| |Reverse|recovery|time|it;||e|[20.5||25.6|[ns|||Va=50V,|r=0.12|A,|dic/dt=100|Aus| |Reverse|recovery|charge|la,|fe|fg|[2.4|[nc|Vr=50|V,|Ir=0.12|A,|dir/dt=100|A/us| **----- End of picture text -----**<br> Final Data Sheet 4 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 Small ~~-S~~ ignal Transistor BSS169I ~~a~~ **==> picture [121 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> eo.<br>Cin fineon ,<br>**----- End of picture text -----**<br> ## 4 Electrical characteristics diagrams **==> picture [527 x 621] intentionally omitted <==** **----- Start of picture text -----**<br> “ET | TT [TTT] TT} MERE TT TT TT<br>08 | f | ft fl =~<br>S RE EN]EE<br>v4 | “EEN<br>\ ett TN EL<br>| At ft z<br>Eo. [ft] NN ote oe<br>02Na foeff<br>| tt NE I<br>e e NE| |} AL] | CEE Ea\<br>o w t LTE OEOEN TI n t EELE<br>0 40 80 120 160 0 40 80 120 160<br>Ta [°C] Ta [°C]<br>lo=f(Ta); [Ves|210 V<br>ee 1 —— a — ——————— oe SS 8 ES 8 A<br>ee ee Se<br>EF Et |<br>YTi| | dC, CE TTT a ee el<br>—— a SSSeilll CCAMPUTIN TUTTECTT TTTCe TUTTITTCTATUTTI CL<br>ee oF<br>SN S00 ws FE 10? e r m cor ATT<br>_ 0.27 TLL<br>49 : CANN | ll S a PS dell Ae<br>8 ESS | Oe ec<br>SSJf} | titty NS N 0 . 05 || LhLGA<br>Nlell 10' P0440<br>10 ? a lll Se eS ere et eet ett<br>Ne 7 A<br>a Aa:<br>ns==aee ee ee | CHCJJ MLCTTrHetTTI TIT<br>o o ELLECCU ITI ace ETI ETUI-ETT E TTA ETT El<br>10° 10' 10? 10° 10 7 10 ° 10 7 10 " 10° 10' 107<br>Vos [V] tp [s]<br>**----- End of picture text -----**<br> Final Data Sheet 5 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 on Cinfineon ; Small ~~-S~~ ignal Transistor BSS1691 **==> picture [528 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5 14<br>Le 40g “H el fer BEE<br>nalffev} EtELT] | ee ee<br>YT<br>TTT TTT) RRA+ +- +<br>2 Ss<br>2 [fe t | YS)<br>|f e | ga<br>ayf aa<br>4 | e e n y<br>|e e<br>| e e<br>of EEEE E EE | See<br>0 2 4 6 8 10 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5<br>Vos [V] bb [A]<br>0 . 5 0 . 35<br>a ee 0.30 CCC ae—<br>f o EEE Te<br>03ef wlltlLLLtitttALLLeet tt<br>ee ee) ee<br>ee A A he<br>ToL ee HA<br>so ALEC<br>a LZ 7EEE<br>TFL] | o s HEE EE<br>| TCEEEEEEEEEEL<br>4ee ee LL<br>- 2 - 1 0 1 2 0.00 0.05 0.10 015 0.20 0.25 0.30 0 3 5 0 . 40<br>Ves [V] Ip [A]<br>**----- End of picture text -----**<br> Final Data Sheet 6 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 ~~a~~ ## Small ~~-S~~ ignal ~~BSS1691 Transistor~~ **==> picture [121 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> Tnfit<br>C in neon ,<br>**----- End of picture text -----**<br> **==> picture [540 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> [Diagram 9: Normalized drain-source on resistance [Diagram 10: Typ.gate threshold voltage<br>2.0 PTT TTT TTT TTT TTT TT TTT TT - 1.0<br>PITT TT TTT TTT TTT TT<br>FCHEEEE-EEEEE<br>1.6 VA - 1.5<br>PLETE TT TTT LTE TETFEE HE MTT<br>os LLL yeeA<br>go EERE eee<br>2 12 4 - 2.0 >=<br>ee Oe aeeae<br>S Litt ti Teer fe<br>@ [TTTTerre<br>ee5s ostLITTTTertyTTT | éss linTNLSee<br>| cree Peete<br>& 0.4 PTT ETT TTT EEE EEE - 3.0<br>PTET TT LTT EEE EEE<br>PTT ETT TTTEEE<br>0 . 0 FEEEEEEEEEEEEEEE HEHE - 3 . 5<br>- 80 - 40 0 40 80 120 160 - 80 - 40 0 40 80 120 160<br>[Rosionj=f(T1), lo=0.05A, Ves=OV TEC] (| Vssinf(Ti), Vos=3 Vs o=50WA nC)<br>[Diagram 11:Typ.capacitances «Diagram 12: Forward characteristics ofreverse diode |<br>10 eee 0 SS SSS<br>RS SS SS SS | PP ———=$ 95 °C a<br>PpRS QS | ° aa.ee ee<br>L [| [| [ | J[ JT[ [ JTT fT Jtf fT T ft T tT fTfT TT f [\ } --— - — 21 5 °C,max0°C |[|_|| [A14) 7A ||| UT<br>a en 150°C, max } |ZT<br>tiing titi titty ttt |} p FAya<br>1? KEE tt PPT | df. =====22=72ee ee =<br>——— i<br>SS OSE ee<br>e ESSNESSSRSSSSS fee CLE<br>— 2 eee < 1 07<br>eo oy [TT7]LLIN [IMETPT] ) ARRLLEEeePTTTE Tt)| j* eeSEESeeSeeee<br>===>RS nS—— === SS Ted/<br>LSa [RS] [RS][ A] 3 | de<br>SEE ee ie 5 eSSe<br>P| | EE| ft EEEft ft ttESSty dh SSSa a SS<br>© o w ELLE<br>0 10 20 30 0.0 0.5 1.0 1 . 5<br>Vos [V] Vsp [V]<br>|C=f(Vos), Ves=-3 Vi RIMHz sd e=f(Von); parameter:<br>**----- End of picture text -----**<br> Final Data Sheet 7 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 BSS169I ~~Te~~ ## Small ~~-S~~ ignal Transistor **==> picture [120 x 45] intentionally omitted <==** **----- Start of picture text -----**<br> Cii n filneon ;<br>**----- End of picture text -----**<br> **==> picture [528 x 300] intentionally omitted <==** **----- Start of picture text -----**<br> Diagram 13: Typ. gate charge Diagram 14: Drain - source breakdown voltage<br>8 a 120<br>}—20vy TT<br>W—--50v;---sovi || | | | | fF,viv ||| J |<br>a es a 4 2 A 115 7<br>a e e ee 2 ee p<br>a ee ee ee) ee ee ee ee<br>a ee ey A ee 2 ee ee 110 SA,<br>ga ___| | | | [fi7/ | | y<br>a ee ee ee 2 2<br>a ee ee Ae ee ee ee ee 105 /<br>=. pf ft TA S 4<br>>g gi a| ee[| |27 Aov i | ee =a 4<br>a ee ee ee A 2 ee ee ee ee 2 400 VA<br>aee2 2 ee ee ee ee ee g Wi<br>go +_|---| Afy |2| | | | | )<br>a A ee ee ee ee ee VA<br>Lf T ot 95 7<br>ee ee ee ee ee ee /<br>a ee e eee ee ee<br>oi f | | | [| | [| | | | 4<br>| a es 90 VA<br>|aa a esee es<br>a aeeeeeeeseeeeee eeee<br>4 l[ [| [ fT oT ofpty 85<br>0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 - 80 - 40 0 40 80 120 160<br>Qgate [nC] Tj [°C]<br>Vos=f(Qgate), Ip=0 . 12 A pulsed, Tj=25 °C Veripss)=f(7}), Ip=250 yA<br>**----- End of picture text -----**<br> **==> picture [147 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> Diagram Gate charge waveforms<br>Vos<br>Q g<br>**----- End of picture text -----**<br> Final Data Sheet 8 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17 **==> picture [121 x 53] intentionally omitted <==** **==> picture [60 x 31] intentionally omitted <==** **==> picture [47 x 64] intentionally omitted <==** **==> picture [61 x 41] intentionally omitted <==** **==> picture [148 x 187] intentionally omitted <==** Small ~~-S~~ ignal Transistor BSS169I ~~Te~~ **==> picture [86 x 41] intentionally omitted <==** **----- Start of picture text -----**<br> _<br>n neon<br>**----- End of picture text -----**<br> ## Revision History ## BSS1691 ## Revision: 2021 ~~-0~~ 3 ~~-1~~ 7, Rev ~~.~~ 2.1 |Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Revision|||||||Subjects (major changes since last revision)||||||||||| |2.0||||2021~~-~~01~~-~~26||||Release of final version||||||||||| |2.1||||2021~~-0~~3~~-~~17||||Updatetechnologynaming||||||||||| Trademarks All referenced product or service names and trademarks are the property of their respective owners. ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie’) ~~.~~ With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ ## Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www. ~~i~~ nfineon ~~.~~ com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ~~.~~ Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ~~.~~ If they fail, it is reasonable to assume that the health of the user or other persons may be endangered ~~.~~ Final Data Sheet 10 Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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