BSS138W

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December 2010 

## **BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor** 

## **General Description** 

These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 

## **Features** 

- RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A 

- RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A 

- High density cell design for extremely low RDS(ON) 

- Rugged and Reliable 

- Compact industry standard SOT-323 surface mount package 

**==> picture [60 x 74] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>S<br>G<br>SOT - 323<br>Marking : 138<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** TA = 25°C unless otherwise noted 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Units**|
|VDSS|Drain-Source Voltage|50|V|
|VGSS|Gate-Source Voltage|±20|V|
|ID|Drain Current          - Continuous                       (Note1)<br>- Pulsed|0.21<br>0.84|A<br>A|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering<br>Purposes, 1/16” from Case for 10 Seconds|300|°C|



## **Thermal Characteristics** 

|**Symbol**<br>**Parameter**|**Symbol**<br>**Parameter**|**Value**||**Units**|
|---|---|---|---|---|
|PD<br>Maximum Power Dissipation                               (Note1)|Maximum Power Dissipation                               (Note1)|340||mW|
|Derate Above 25°C||2.72||mW/°C|
|RθJA<br>Thermal Resistance, Junction to Ambient         (Note1)||367||°C/W|
|**Package Marking and Ordering Information**|||||
|**Device Marking**<br>**Device**<br>138<br>BSS138W<br>~~ee~~|**Reel Size**<br>7’’|**Tape width**<br>8mm|**Quantity**<br>3000 units||



© 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 

www.fairchildsemi.com 

1 

## **Electrical Characteristics** TA = 25°C unless otherwise noted 

|**Electrica**|**Electrica**|**l Characteristics**TA= 25°C|unless otherwise noted|||||
|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|**Off Characteristics**||||||||
||BVDSS|Drain-Source Breakdown Voltage|VGS= 0V, ID= 250μA|50|||V|
||ΔBVDSS<br>ΔTJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250μA,Referenced to 25°C||71||mV/°C|
||IDSS|Zero Gate Voltage Drain Current|VDS= 50V, VGS= 0V<br>VDS= 50V, VGS= 0V, TJ= 125°C<br>VDS= 30V, VGS= 0V|||0.5<br>5<br>100|μA<br>μA<br>nA|
||IGSS|Gate-Body Leakage|VGS= ±20V, VDS= 0V|||±100|nA|
|**On Characteristics**  (Note2)||||||||
||VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 1mA|0.8|1.3|1.5|V|
||ΔVGS(th)<br>ΔTJ|Gate Threshold Voltage<br>Temperature Coefficient|ID= 1mA, Referenced to 25°C||-3.9||mV/°C|
||RDS(ON)|Static Drain-Source<br>On-Resistance|VGS= 10V, ID= 0.22A<br>VGS= 4.5V, ID= 0.22A<br>VGS= 10V, ID= 0.22A, TJ=125°C||1.17<br>1.36<br>2.16|3.5<br>6.0<br>5.8|Ω<br>Ω<br>Ω|
||ID(ON)|On-State Drain Current|VGS= 10V, VDS= 5V|0.2|||A|
||gFS|Forward Transconductance|VDS= 10V, ID= 0.22A|0.12|||S|
|**Dynamic  Characteristics**||||||||
|Ciss||Input Capacitance|VDS= 25V, VGS= 0V,  f = 1.0MHz||38||pF|
|Coss||Output Capacitance|||5.9||pF|
|Crss||Reverse Transfer Capacitance|||3.5||pF|
|RG||Gate Resistance|VGS= 15mV, f = 1.0MHz||11||Ω|
|**Switching  Characteristics**(Note2)||||||||
|td(on)||Turn-On Delay Time|VDD= 30V, ID= 0.29A,<br>VGS= 10V, RGEN= 6Ω||2.3|5|ns|
|tr||Turn-On Rise Time|||1.9|18|ns|
|td(off)||Turn-Off Delay Time|||6.7|36|ns|
|tf||Turn-Off Fall Time|||6.5|14|ns|
|Qg||Total Gate Change|VDS= 25V, ID= 0.22A,<br>VGS= 10V||1.1||nC|
|Qgs||Gate-Source Change|||0.12||nC|
|Qgd||Gate-Drain Change|||0.22||nC|
|**Drain-Source Diode Characteristics and Maximum Ratings**||||||||
|IS||Maximum Continuous Drain–Source Diode Forward Current||||0.22|A|
|VSD||Drain-Source Diode Forward<br>Voltage|VGS= 0V, IS= 0.44A    (Note2)|||1.4|V|



## **Notes:** 

**1.** 367°C/W when mounted on a minimum pad. 

**2.** Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% 

© 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

**==> picture [157 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. On-Region Characteristics.<br>**----- End of picture text -----**<br>


**Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.** 

**==> picture [469 x 572] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 3.5<br>3.0<br>1.5 VGS = 10V<br>6V<br>2.5 4.5V<br>4.5V<br>4V<br>1.0 3.5V 2.0 VGS = 2.5V 3V 3.5V<br>3V<br>1.5<br>0.5 2.5V<br>1.0 6V 10V<br>2V<br>0.0 0.5<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0<br>VDS. Drain-Source Voltage (V) ID. Drain-Source Current(A)<br>Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with<br>Temperature.        Gate-to-Source Voltage.<br>2.5 4.0<br>VGS = 10V ID = 110 mA<br>ID = 220 mA 3.5<br>2.0 3.0<br>2.5 TA = 125oC<br>1.5 2.0<br>1.5<br>1.0 1.0 TA = 25oC<br>0.5<br>0.5 0.0<br>-50 0 50 100 150 0 2 4 6 8 10<br>TJ. Junction Temperature (oC) VGS. Gate to Source Voltage(V)<br>Figure 5. Drain-Source On Voltage with  Figure 6. Body Diode Forward Voltage Variation<br>Temperature.                    with Source Current and Temperature.<br>2.0 1000<br>VGS = 10V VGS = 0 V<br>1.6 TA = 125(oC) 100 TA=150oC<br>1.2<br>10 TA=25oC<br>0.8 TA = 25(oC)<br>1<br>0.4<br>TA = -55(oC) TA=-55oC<br>0.0 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>ID. Drain Current (A) VSD. Body Diode Forward Voltage [V]<br>(Ω)<br>(on),<br>DS<br>R<br>. Drain-Source Current (A)ID<br>Drain-Source On-Resistance<br>(Ω) (Ω)<br>(on)  (on)<br>DS DS<br>R R<br>Drain-Source On-Resistance<br>Normalized Drain-Source On-Resistance<br>. Drain-Source On Voltage (V)<br>DS<br>V<br>. Reverse Drain Current [mA]<br>IS<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** (Continued) 

**Figure 7. Gate Charge Characteristics.** 

**Figure 8. Capacitance Characteristics.** 

**==> picture [469 x 569] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 100<br>ID = 220mA f = 1MHZ<br>VGS = 0V<br>8 80<br>VDS = 8V<br>6 60<br>VDS = 25V CISS<br>4 VDS = 30V 40<br>COSS<br>2 20<br>CRSS<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>Qg. Gate Charge (nC) VDS. Voltage Bias (V)<br>Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum<br>Power Dissipation.<br>101 5<br>Single Pulse<br>Rthja=367oC/W<br>100 4 TA=25<br>100μs<br>1ms 3<br>10ms<br>10-1 100ms<br>1s<br> RDS(on)   Limit DC 2<br>10-2     VGS=10V 1<br>   Single Pulse<br>Rthja=367oC/W<br>   Ta = 25oC<br>10-310-1 100 101 102 01E-3 0.01 0.1 1 10 100<br>VDS, Drain-Source Voltage [V] t1, Time(sec)<br>Figure 11. Transient Thermal Response Curve.<br>1<br>50%<br>Rthja(t)=r(t)*Rthja<br>30% Rthja=367oC/W<br>0.1<br>10%<br>5%<br>2%<br>D=1%<br>Single Pulse<br>0.01<br>1E-4 1E-3 0.01 0.1 1 10 100 1000<br>t1, time(sec)<br>. Capacitance (pF)<br>RSS<br>C<br>. Gate-Source Voltage (V)GS COSS,<br>V ISS,<br>C<br>, Drain Current [A]<br>ID<br>P(pk), Peak Transient Power (W)<br>r(t), Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


© 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 

www.fairchildsemi.com 

4 

**==> picture [510 x 676] intentionally omitted <==**

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SYMM<br>2.00±0.20 A [C] L<br>0.60 MIN<br>3<br>3 B<br>1.25±0.10 1.80<br>1 2<br>1 2<br>(0.20) 0.40 0.65 0.50 MIN<br>0.25<br>0.65 0.10 A B 1.30<br>1.30<br>LAND PATTERN RECOMMENDATION<br>SEE DETAIL A<br>1.00<br>0.80<br>1.10<br>0.80<br>(0.425)<br>0.10 0.10 C<br>C 0.00 2.10±0.30<br>SEATING<br>PLANE<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>   A)  THIS PACKAGE CONFORMS TO EIAJ SC-70.<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>   C)  DIMENSIONS DO NOT INCLUDE BURRS<br>       OR MOLD FLASH. MOLD FLASH OR BURRS<br>       DOES NOT EXCEED 0.10MM.<br>(R0.10)    D)  DIMENSIONING AND TOLERANCING PER        ASME Y14.5M-2009.<br>   E)  DRAWING FILE NAME: MKT-MAA03AREV2<br>0.26<br>0.10<br>SEATING 0.30 30°<br>PLANE 0.10 0°<br>DETAIL A<br>SCALE: 2X<br>**----- End of picture text -----**<br>


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