BSS138LT1G

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## MOSFET – Power, N-Channel, SOT-23 200 mA, 50 V BSS138L, BVSS138L 

## **200 mA, 50 V R = 3.5 DS(on)** 

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N−Channel<br>3<br>1<br>2<br>**----- End of picture text -----**<br>


Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 

## **Features** 

- Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for Low Voltage Applications 

- Miniature SOT−23 Surface Mount Package Saves Board Space 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|MARKING|
|•|HBM Class 0A, MM Class M1A, CDM Class IV (Note 3)|3|DIAGRAM|
|•|BVSS Prefix for Automotive and Other Applications Requiring|
|Unique Site and Control Change Requirements; AEC−Q101|1|
|Qualified and PPAP Capable|2|J1 M|
|•|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|SOT−23|
|CASE 318|
|Compliant|din|1|es|
|STYLE 21|
|MAXIMUM RATINGS|(TA = 25|°|C unless otherwise noted)|J1|= Device Code|
|Rating|Symbol|Value|Unit|M|= Date Code*|
|es ee|es|.|= Pb−Free Package|
|Drain−to−Source Voltage|VDSS|50|Vdc|(Note: Microdot may be in either location)|
|Gate−to−Source Voltage − Continuous|VGS|±|20|Vdc|
|a|*Date Code orientation and/or overbar may|
|Drain Current|mA|vary depending upon manufacturing location.|
|−Continuous @ TA = 25|°|C|ID|200|
|−Pulsed Drain Current (tp|≤|10 s)|IDM|800|
|Total Power Dissipation @ TA = 25|°|C|PD|225|mW|ORDERING INFORMATION|
||]|————|
|Operating and Storage Temperature|TJ, Tstg|−55 to 150|°|C|Device|Package|Shipping|[[†]]|
|es|Range|BSS138LT1G,|SOT−23|3,000 / Tape & Reel|
|Thermal Resistance,|R|ee|JA|556|ee|°|C/W|BVSS138LT1G|(Pb−Free)|
|Junction−to−Ambient|
|ee|BSS138LT7G|SOT−23|3,500 / Tape & Reel|
|Maximum Lead Temperature for|TL|260|°|C|(Pb−Free)|
|Soldering Purposes, for 10 seconds|
|BSS138LT3G,|SOT−23|10,000 / Tape & Reel|
|Stresses exceeding those listed in the Maximum Ratings table may damage the|BVSS138LT3G|(Pb−Free)|
|Oo|ee|ee|—{—|
|device. If any of these limits are exceeded, device functionality should not be|
|†For information on tape and reel specifications,|
|assumed, damage may occur and reliability may be affected.|

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**ORDERING INFORMATION Device Package Shipping**[[†]] BSS138LT1G, SOT−23 3,000 / Tape & Reel BVSS138LT1G (Pb−Free) BSS138LT7G SOT−23 3,500 / Tape & Reel (Pb−Free) BSS138LT3G, SOT−23 10,000 / Tape & Reel BVSS138LT3G (Pb−Free) ~~—{—~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BSS138LT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **April, 2024 − Rev. 14** 

**BSS138L, BVSS138L** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

**Characteristic Symbol Min Typ Max Unit** ~~Po~~ **OFF CHARACTERISTICS** Drain−to−Source Breakdown Voltage V(BR)DSS 50 − − Vdc (VGS = 0 Vdc, ID = 250 Adc) ~~a~~ Zero Gate Voltage Drain Current IDSS Adc (VDS = 25 Vdc, VGS = 0 Vdc, 25 ° C) − − 0.1 (VDS = 50 Vdc, VGS = 0 Vdc, 25 ° C) − − 0.5 (VDS = 50 Vdc, VGS = 0 Vdc, 150 ° C) − − 5.0 Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ± 0.1 Adc ~~eee~~ **ON CHARACTERISTICS** (Note 1) Gate−Source Threshold Voltage VGS(th) 0.85 − 1.5 Vdc (VDS = VGS, ID = 1.0 mAdc) ~~a~~ Static Drain−to−Source On−Resistance rDS(on) (VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40 ° C to +85 ° C) − 5.6 10 (VGS = 5.0 Vdc, ID = 200 mAdc) − − 3.5 ~~ee~~ Forward Transconductance ~~ee~~ gfs 100 − − mmhos (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) ~~a~~ **DYNAMIC CHARACTERISTICS** Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1  MHz) Ciss − 40 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1  MHz) Coss − 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1  MHz) Crss − 3.5 5.0 ~~———~~ **SWITCHING CHARACTERISTICS** (Note 2) Turn−On Delay Time td(on) − − 20 ns (VDD = 30 Vdc, ID = 0.2 Adc,) ~~es~~ Turn−Off Delay Time td(off) − − 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product ~~A ee eee ee~~ performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 

2. Switching characteristics are independent of operating junction temperature. 

3. ESD between the gate and source serves only, no gate overvoltage rating is implied. 

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## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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0.8 0.9<br>TJ = 25°C VGS = 3.5 V VDS = 10 V 25°C<br>0.7 nia aa 0.8 ee ee ee -55°C<br>VGS = 3.25 V 0.7<br>0.6 Hpy-AR + a ee 9 Ay  a 150°C<br>VGS = 3.0 V 0.6<br>0.5<br>>Ze VGS = 2.75 V 0.5 e e ee<br>0.4<br>fe 0.4 f h<br>0.3 V GS = 2.5 V<br>0.3<br>0.2 pri yi Tf<br>0.2<br>0.10 PoorerAe 0.10 es?EEE AEE<br>0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>2.2 1.25<br>ID = 1.0 mA<br>2<br>ee VGS = 10 V<br>1.8 ID = 0.8 A 1.125<br>1.6<br>VGS = 4.5 V<br>1.4 ID = 0.5 A 1<br>1.2<br>1 0.875<br>0.8<br>0.6 0.75<br>er -5 45 ro 95 145 er oS -30 -5 20 45 70 95 120 145<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 3. On−Resistance Variation with Figure 4. Threshold Voltage Variation<br>Temperature with Temperature<br>10 1.0E-5<br>VDS = 40 V<br>TJ = 25°C<br>8 1.0E-6 150°C<br>6<br>125°C<br>1.0E-7<br>4 a4! -------—<br>ID = 200 mA<br>1.0E-8<br>2 Pi.<br>| | | Gee<br>0 ees 1.0E-9 --------—<br>0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 35 40 45 50<br>QT, TOTAL GATE CHARGE (pC) VDS, DRAIN-TO-SOURCE VOLTAGE (V)<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>(NORMALIZED)<br>Vgs(th) , VARIANCE (VOLTS)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE<br>, DRAIN-TO-SOURCE LEAKAGE (A)<br>IDSS<br>VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 5. Gate Charge** 

**Figure 6. IDSS** 

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**BSS138L, BVSS138L** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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10 8<br>2 VGS = 2.5  V VGS = 2.75 V<br>9<br>7 150°C<br>8<br>150°C<br>eee 6<br>7 ps<br>6 GOOG|. oT t C“<C 5 iS a<br>5 25°C 4<br>4 25°C<br>ee 3<br>3 -55 ° C<br>21 ——PEEtC 21 SS -55°C<br>0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>Figure 7. On−Resistance versus Drain Current Figure 8. On−Resistance versus Drain Current<br>6 4.5<br>5.5 ee VGS = 4.5  V a 150°C 4 VGS = 10 V 150°C<br>5<br>4.5 Se 3.5<br>4<br>3<br>3.5<br>3 Pet | | 25°C 2.5 PPP rr 25°C<br>2.5 2<br>2 -55°C<br>FEES 1.5 REEREEREE -55°C<br>1.5<br>1 RE 1 EEE<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>Figure 9. On−Resistance versus Drain Current Figure 10. On−Resistance versus Drain<br>Current<br>1 120<br>VGS = 2.75 V<br>100 TJ = 25°C<br>f = 1 MHz<br>TJ = 150°C 25°C -55°C<br>0.1<br>ee 80<br>60<br>— FFP ay © ae eefo<br>Ciss<br>0.01 40<br>ee<br>Coss<br>20<br>— a ee<br>fF WN Crss<br>0.001 fe H OE 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25<br>VSD, DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)<br>RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)<br>C, CAPACITANCE (pF)<br>ID, DIODE CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 11. Body Diode Forward Voltage** 

**Figure 12. Capacitance** 

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## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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1<br>° SS ——— = ———e s<br>TA = 25 C EE ea SN S<br>VGS ≤ 10 V Ptya eTINGEN 1 m s<br>10  m s<br>0.1 SSSaSeees a ee—— er ner<br>se<br>a ee<br>pte fT Perey ft PN<br>0.01 ————_————————a ae<br>a<br>a dc<br>RDS(on) LIMIT Pret[TTTTtessa<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN−TO−SOURCE CURRENT (A)<br>IDS<br>**----- End of picture text -----**<br>


**Figure 13. Safe Operating Area** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

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GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 14 AUG 2024 

## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU 

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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


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