BSS138KV-TP

**V** 

- ESD HBM Class 2 

- Trench LV MOSFET Technology 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(Note1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

## **N-C** 

## **MOSFET** 

- Operating Junction Temperature Range: -55°C to +150°C 

- Storage Temperature: -55°C to +150°C 

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SOT-563<br>**----- End of picture text -----**<br>


- Thermal Resistance: 432°C/W Junction to Ambient[(Note2)] 

|**Parameter**|**Parameter**|**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TA=25°C|ID|204|mA|
||TA=100°C||129||
|Pulsed Drain Current(Note 3)||IDM|816|mA|
|Total Power Dissipation（Note 4）||PD|289|mW|



## **Internal Structure and Marking Code** 

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D1 G2 S2 6       5 4<br>6 5 4<br>138<br>1 2 3<br>S1 G1 D2 1  2 3<br>**----- End of picture text -----**<br>


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a A fe<br>6 5 4<br>B C<br>1 2 3<br>D<br>G<br>K M<br>kK [———|] H [*][H] L<br>**----- End of picture text -----**<br>


~~ee~~ INCHESDIMENSIONSMM DIM ~~ee ee~~ NOTE MIN MAX MIN MAX ~~| -K>—++ OOF~~ A 0.006 0.011 0.15 0.30 ~~a ee ee —~~ B ~~|~~ 0.043 ~~|~~ 0.051 ~~Ff~~ 1.10 ~~|~~ 1.30 ~~fF | a~~ C 0.059 ~~ee~~ 0.067 1.50 ~~ee~~ 1.70 ~~ee~~ D 0.020 0.50 TYP. ~~ee ee ee ee a~~ G ~~ee~~ 0.035 0.043 0.90 1.10 H 0.059 0.067 1.50 1.70 ~~ee ee~~ K 0.022 0.026 0.55 0.65 ~~ee ee ee ee a~~ L ~~ee~~ 0.004 ~~ee~~ 0.011 ~~ee~~ 0.10 0.30 ~~ee ee~~ M 0.004 0.007 0.10 0.18 ~~ee[ee] ee~~ **Suggested Solder Pad Layout** 

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Unit:mm<br>0.30<br>0.50<br>0.30<br>I|<br>I| |<br>I||<br>I| |<br>|||<br>II|||| 1.40<br>I| |<br>I||<br>|| |<br>I | |<br>t-P 7 en i<br>EYES 1.00 a<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|60|||V|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250uA|0.6|1.0|1.4|V|
|Gate-Body Leakage Current|IGSS|VGS=±20V, VDS=0V|||±10|µA|
|Zero Gate Voltage Drain Current|IDSS|VDS=60V, VGS=0V|||1|µA|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=0.2A||2.2|3.3|Ω|
|||VGS=4.5V, ID=0.2A||2.7|4.1||
|||VGS=2.5V, ID=0.05A||4.2|6.3||
|Gate Resistance|Rg|f=1MHz, Open Drain||107||Ω|
|**D���� Characteristics**|||||||
|Continuous Body Diode Current|IS||||0.2|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=0.2A|||1.2|V|
|Reverse Recovery Time|trr|IF=0.3A, dIF/dt=100A/μs||9.6||ns|
|Reverse Recovery Charge|Qrr|||4.0||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=30V,VGS=0V,f=1MHz||13.3||pF|
|Output Capacitance|Coss|||3.6|||
|Reverse Transfer Capacitance|Crss|||1.6|||
|Total Gate Charge|Qg|VDS=30V,VGS=10V,ID=0.3A||0.8||nC|
|Gate-Source Charge|Qgs|||0.2|||
|Gate-Drain Charge|Qgd|||0.1|||
|Turn-On  Delay Time|td(on)|VDD=30V,VGS=10V,<br>RG=3Ω,ID=0.3A||2.6||ns|
|Turn-On  Rise Time|tr|||3.2|||
|Turn-Off  Delay Time|td(off)|||8.2|||
|Turn-Off  Fall Time|tf|||33.6|||



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## **Curve Characteristics** 

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Fig. 1 - Typical Output Characteristics<br>1.0<br>VGS=10V,6V<br>0.8<br>VGS=5V<br>0.6 V GS =4V<br>0.4 VGS=3.5V<br>VGS=3V<br>0.2<br>VGS=2.5V<br>0.0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Fig.3-RDS(ON)-VGS<br>15<br>ID=0.2A<br>12<br>9<br>6<br>3<br>25°C<br>0<br>0 2 4 6 8 10<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


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Fig. 5 - Capacitance Characteristics<br>100<br>10 Ciss<br>C oss<br>1 Crss<br>0.1<br>0 20 40 60<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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Fig. 2 - Transfer Characteristics<br>1.0<br>VDS= 5V<br>0.8<br>25°C<br>0.6<br>150°C<br>0.4<br>0.2<br>0.0<br>0 2 4 6 8 10<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


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Fig.4-RDS(ON)-ID<br>7<br>6<br>VGS=2.5V<br>5<br>4<br>VGS=4.5V<br>3<br>2 V GS =10V<br>1<br>0<br>0.0 0.2 0.4 0.6 0.8<br>Drain Current (A)<br>Drain-Source On Resistance (mΩ)<br>**----- End of picture text -----**<br>


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Fig. 6 - Gate Charge<br>10<br>VDS=30V<br>ID=0.3A<br>8<br>6<br>4<br>2<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0<br>Gate Charge(nC)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 7 - Normalized Threshold Voltage<br>1.4<br>ID=250μA<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>Fig.9-IS-VSD<br>1<br>VGS=0V<br>150°C 25°C<br>0.1<br>0.01<br>0.2 0.4 0.6 0.8 1.0 1.2<br>Source To Drain Voltage (V)<br>Fig. 11 - PD Dissipation<br>400<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 150<br>TA Temperature (°C)<br>VGS(th) - Threshold Voltage Normalized<br>Source Current (A)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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Fig. 8 - Normalized On Resistance Characteristics<br>2.5<br>VGS=10V<br>ID=0.2A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


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Fig. 10 - Drain Current<br>300<br>200<br>100<br>0<br>0 25 50  75 100 125 150<br>TA Temperature (°C)<br>ID-Drain Current (mA)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 12 - Safe Operation Area<br>10<br>1<br>RDS(on) Limited<br>10μs<br>0.1 100μs<br>300μs<br>1ms<br>10ms<br>0.01 100ms<br>TJ(max)=150°C 1s<br>T A =25°C<br>Single Pulse<br>0.001<br>0.1 1 10 100 1000<br>Drain-Source Voltage (V)<br>Fig. 13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T In descending order<br>TJ,PK=TA+PdmꞏZθJAꞏRθJA D=0.5, 0.3,0.2,  0.1 , 0.05,0.02,0.01,single pulse<br>RθJA=432°C/W<br>1<br>0.1<br>0.01 Single Pulse ���<br>���<br>�<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>Pulse Width (s)<br>Drain Current (A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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Part Number-TP 

Tape&Reel:3Kpcs/Reel 

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