BSS138DW-7-F

**BSS138DW** &,. C **DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|---|---|---|
|50V|3.5Ω @ VGS= 10V|200mA|



## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Features and Benefits** 

- Low On-Resistance 

- Low Gate Threshold Voltage 

- Low Input Capacitance 

   - Fast Switching Speed 

- 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

- 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at -** 

- **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

- Load Switch 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (BSS138DWQ)** 

## **Mechanical Data** 

- Case: SOT363 

- Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram 

- 

Weight: 0.006 grams (Approximate) 

SOT363 (Standard) 

Top View 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|BSS138DW-7-F|SOT363 (Standard)|3000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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K38 = Product Type Marking Code<br>K38 YMYM<br>YM = Date Code Marking<br>Y or Y = Year (ex: I = 2021)<br>M or M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2007  …  2021  2022  2023 2024  2025 2026 2027  2028 2029 2030<br>——————————— Code U …  I  J K  L  M  N  O P  R  S<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>rr Code 1  2  3 4  5 6 7  8 9 O N  D<br>BSS138DW 1 of 6  September 2021<br>Document number: DS30203 Rev. 16 - 2 www.diodes.com   © Diodes Incorporated<br>YM K38K38<br>**----- End of picture text -----**<br>


**BSS138DW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|50|V|
|Drain-Gate Voltage(Note 7)|VDGR|50|V|
|Gate-Source Voltage<br>Continuous|VGSS|±20|V|
|Drain Current(Note 5)<br>Continuous|ID|200|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|200|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|625|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6)** Drain-Source Breakdown Voltage BVDSS 50 75 — V VGS = 0V, ID = 250μA ~~————~~ Zero Gate Voltage Drain Current IDSS — — 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V **ON CHARACTERISTICS (Note 6)** Gate Threshold Voltage VGS(TH) 0.5 1.2 1.5 V VDS = VGS, ID = 250μA ~~Se~~ Static Drain-Source On-Resistance RDS(ON) — 1.4 3.5 Ω VGS = 10V, ID = 0.22A Forward Transconductance gFS 100 — — mS VDS = 25V, ID = 0.2A, f = 1.0kHz **DYNAMIC CHARACTERISTICS (Note 8)** Input Capacitance Ciss — — 50 pF Output Capacitance Coss — — 25 pF VDS = 10V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss — — 8.0 pF Turn-On Delay Time tD(ON) — — 20 ns VDD = 30V, ID = 0.2A, Turn-Off Delay Time tD(OFF) — — 20 ns RGEN = 50Ω ~~—— ey~~ Notes: 5. Device mounted on FR-4 PCB, 1 inch  0.85 inch  0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 

7. RGS  20kΩ. 

8. Guaranteed by design. Not subject to product testing. 

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September 2021 © Diodes Incorporated 

**BSS138DW** 

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0.6 T  = 25TjJ = 25°C °C VGS = 3.5V 0.8 -55°C<br>VDS = 1V<br>0.7<br>0.5<br>eRe VGS = 3.25V ptt tty 25°C<br>0.6<br>0.4<br>VGS = 3.0V 0.5<br>150°C<br>0.3 | V GS  = 2.75V 0.4 Saneen//<br>0.3<br>0.2 Pod eee 4<br>VGS = 2.5V<br>/_--——— 0.2 PEE A<br>0.1<br>0.1<br>yoo +A<br>0 0<br>0 PELL 1 2 3 4 ETT 5 6 7 ET 8 9 10 0 0.5 1 1.5 W/n 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1  Drain-Source Current vs. Drain-Source Voltage<br>Fig. 2  Transfer Characteristics<br>2.45 2<br>2.25 1.8<br>es ee TTD<br>1.6 _"<br>2.05<br>1.4<br>1.85 VGS = 10V<br>ID = 0.5A 1.2<br>1.65<br>1<br>1.45 SYY e 0.8 iiiCAC<br>1.25 a 7s 0.6 SERS GR00R0R0000<br>VGS = 4.5V<br>1.05 ID = 0.075A 0.4<br>0.85 S A 0.2 HE<br>0.65 a 0 Poon<br>-55 -5 45 95 145 -55 -25 0 25 50 75 100 125 150<br>TT , JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (°C) j 癈 ) T , JUNCTION TEMPERATURE Tj J, JUNCTION TEMPERATURE (°C)  ( 癈C )<br>Fig. 3  Drain-Source On Resistance vs. Junction Temperature Fig. 4  Gate Threshold Voltage vs. Junction Temperature<br>8 9<br>VGS = 2.5V 150°C VGS = 2.75V<br>8<br>7 L e e e<br>7<br>6 ee ee ee ed 150°C<br>5 25°C 6<br>5<br>4 se e e e<br>4<br>EER EEe i ae 25°C<br>3<br>joer tf 3 e r<br>-55°C<br>2 | 2 T r<br>-55°C<br>1 Pt Pt Et 1 e e<br>0 PEE TT 0 TT<br>0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0 0.05 0.1 0.15 0.2 0.25<br>ID, DRAIN-CURRENT (A) ID, DRAIN-CURRENT (A)<br>Fig. 5  Drain-Source On-Resistance vs. Drain-Current Fig. 6  Drain-Source On-Resistance vs. Drain-Current<br>AGE (V)<br>, GATE THRESHOLD VOLT<br>GS(th)<br>V<br>D<br>, DRAIN-SOURCE CURRENT (A)<br>I<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLT<br>GS(TH)<br>V<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>ON-RESISTANCE (<br>, NORMALIZED DRAIN-SOURCE<br>R<br>DS(ON)<br>**----- End of picture text -----**<br>


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September 2021 

© Diodes Incorporated 

**BSS138DW** 

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6 3.5<br>VGS = 4.5V VGS = 10V 150°C<br>5 150°C 3<br>COTTA 2.5 oe<br>4 TTT TET =  AreFERRE<br>2<br>3 25°C<br>RPT 25°C | 1.5 AHH:<br>2<br>ee 1 Pt<br>-55°C<br>01 SO EELUAnANAaAa -55°C ELEee 0.50 CELECCELE ELE<br>0 0.1 0 . 2 0 . 3 0 . 4 0.5 0 0.1 0.2 0.3 0.4 0.5<br>Fig. 7  Drain-Source On-Resistance vs. Drain-CurrentID, DRAIN-CURRENT (A) Fig. 8  Drain-Source On-Resistance vs. Drain-CurrentID, DRAIN-CURRENT (A)<br>1 100<br>VGS = 0V<br>f = 1MHz<br>8ee a AKy | ==a= —<br>Ciss<br>0.1 150°C<br>— f ff Co a<br>-55°C<br>10<br>Coss<br>0.01 25°C<br>ye N S<br>Crss<br>0.001 SSeee ee 1 ee| tt<br>0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 25 30<br>VSD, DIODE FORWARD VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9  Body Diode Current vs. Body Diode Voltage Fig. 10  Capacitance vs. Drain-Source Voltage<br>D<br>, DIODE CURRENT (A)<br>I<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>C, CAPACITANCE (pF)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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BSS138DW Document number: DS30203 Rev. 16 - 2 

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**BSS138DW** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363 (Standard)<br>E E1 SOT363 (Standard)<br>Dim  Min  Max  Typ<br>A1  0.00  0.10  0.05<br>A2  0.80 1.00 0.90<br>b 0.10 0.35 0.225<br>c 0.08 0.22  0.15<br>F<br>b D  1.80 2.20 2.00<br>E  2.00 2.45 2.225<br>E1  1.15 1.35 1.25<br>D<br>e --  --  0.65<br>F  0.25 0.45 0.35<br>L  0.25 0.46 0.355<br>a  0° 8° --<br>A2<br>All Dimensions in mm<br>c a<br>A1 e A. L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT363 (Standard)<br>C<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>G  1.300<br>Y1 G X  0.420<br>Y  0.600<br>Y1  2.500<br>Y<br>_ogg X o r ==<br>**----- End of picture text -----**<br>


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BSS138DW Document number: DS30203 Rev. 16 - 2 

September 2021 © Diodes Incorporated 

**BSS138DW** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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BSS138DW Document number: DS30203 Rev. 16 - 2 

September 2021 © Diodes Incorporated