BSS138AKDW-TP

Dual MOSFET, Dual N Channel, 50 V, 220 mA, 1.6 ohm

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Manufacturer: MICRO COMMERCIAL COMPONENTS (MCC)
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: Dual N Channel
Product Range: -
Qualification: -
Transistor Case Style: SOT-363
Operating Temperature Max: 150°C
Power Dissipation N Channel: 320mW
Power Dissipation P Channel: -
Drain Source Voltage Vds N Channel: 50V
Drain Source Voltage Vds P Channel: -
Continuous Drain Current Id N Channel: 220mA
Continuous Drain Current Id P Channel: -
Drain Source On State Resistance N Channel: 1.6ohm
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	3000
Price	0.021 €
Current stock	10+
Lead time	30 days

Datasheet

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## **Features** 

- ESD protected:1500V 

- High Dense Cell Design For Extremely Low RDS(ON) 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(Note 1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

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## **Maximum Ratings** 

- Operating Junction Temperature Range: -55°C to +150°C 

- Storage Temperature: -55°C to +150°C 

- Thermal Resistance: 395°C/W Junction to Ambient[(Note][2)] 

|•<br>Thermal Resistance: 39|5°C/W Juncti|on to Amb|ient(Note 2)||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Rating**|**Unit**|
|Drain-Source Voltage||VDS|50|V|
|Gate-Source Volltage||VGS|±20|V|
|Continuous Drain Current|TA=25°C|ID|0.22|A|
||TA=100°C||0.14||
|Pulsed Drain Current(Note 3)||IDM|0.88|A|
|Total Power Dissipation(Note 4)||PD|0.32|W|



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SOT-363<br>**----- End of picture text -----**<br>


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G<br>B C<br>A<br>M<br>H<br>K L<br>J<br>D<br>**----- End of picture text -----**<br>


Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

||DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|---|
|DIM|INCHES||MM||NOTE|
||MIN|MA|X<br>MIN|MAX||
|A|0.006|0.01|4<br>0.15|0.35||
|B|0.045|0.05|3<br>1.15|1.35||
|C|0.079|0.09|6<br>2.00|2.45||
|D|0.026||0.65||TYP.|
|G|0.047|0.05|5<br>1.20|1.40||
|H|0.071|0.08|7<br>1.80|2.20||
|J|-----|0.00|4<br>-----|0.10||
|K|0.031|0.04|3<br>0.80|1.10||
|L|0.010|0.01|8<br>0.26|0.46||
|M|0.003|0.00|6<br>0.08|0.15||



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## **Internal Structure and Marking Code** 

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D1 G2 S2<br>6 5 4 6 5 4<br>SS<br>1 2 3<br>1 2 3 Dot denotes Pin1<br>S1 G1 D2<br>**----- End of picture text -----**<br>


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## **ELECTRICAL CHARACTERISTICS (Ta=25** � **unless otherwise specified)** 

|**Parameter**|**Symbol**|**Test   conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|50|||V|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|0.8|1.0|1.45|V|
|Gate-Body Leakage Current|IGSS|VGS=± 20V, VDS=0V|||±10|µA|
|Zero Gate Voltage Drain Current|IDSS|VDS=48V, VGS=0V|||1|µA|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=0.5A||1.1|1.6|Ω|
|||VGS=4.5V, ID=0.1A||1.2|2.5||
|||VGS=2.5V, ID=0.1A||1.8|3.8||
|Forward Transconductance|gFS|VDS=10V, ID=0.1A||325||mS|
|Gate Resistance|Rg|f=1 MHz, Open drain||84||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||0.22|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=0.5A|||1.3|V|
|Reverse Recovery Time|trr|IF=0.5A, dIF/dt=100A/μs||9.4||ns|
|Reverse Recovery Charge|Qrr|||2.2||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=25V,VGS=0V,f=1MHz||29.5||pF|
|Output Capacitance|Coss|||4.4|||
|Reverse Transfer Capacitance|Crss|||3|||
|Total Gate Charge|Qg|VDS=25V,VGS=10V,ID=0.5A||1.2||nC|
|Gate-Source Charge|Qgs|||0.32|||
|Gate-Drain Charge|Qgd|||0.16|||
|Turn-On  Delay Time|td(on)|VDD=25V,VGS=10V,<br>RGEN=25Ω,ID=0.5A||3.3||ns|
|Turn-On  Rise Time|tr|||3|||
|Turn-Off  Delay Time|td(off)|||12|||
|Turn-Off  Fall Time|tf|||9|||



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## **Curve Characteristics** 

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Fig. 1 - Typical Output Characteristics<br>2.0<br>V GS =10V,6V,5V,4.5V , 4V<br>1.8<br>1.6<br>1.4<br>1.2 VGS=3.5V<br>1.0<br>V GS =3V<br>0.8<br>0.6<br>0.4 VGS=2.5V<br>0.2<br>V GS =2V<br>0.0<br>0 1 2 3 4 5<br>Drain To Source Voltage (V)<br>Fig. 3 - RDS(ON)—VGS<br>5000<br>ID=0.5A<br>4000<br>3000<br>2000<br>25 ℃<br>1000<br>2 4 6 8 10<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


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Fig. 5 - Capacitance Characteristics<br>100<br>C iss<br>10<br>Coss<br>C rss<br>1<br>0 10 20 30 40 50<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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Fig. 2 - Transfer Characteristics<br>2.0<br>VDS=5V<br>1.8<br>1.6 25°C<br>1.4<br>1.2<br>125°C<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 1 2 3 4 5<br>Gate To Source Voltage (V)<br>Fig. 4 - RDS(ON)—ID<br>3500<br>T =25 ℃<br>j<br>3000<br>2500<br>2000<br>VGS=4.5V<br>1500<br>1000<br>VGS=10V<br>500<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>Drain Current(A)<br>Fig. 6 - GateCharge<br>10<br>VDS=25V<br>I D =0.5A<br>8<br>6<br>4<br>2<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>Gate Charge(nC)<br>Drain Current (A)<br>）<br>Drain-Source on Resistance(mΩ<br>V)<br>（<br>Gate-Source Voltage<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 7 - Nomalized Threshold Voltage<br>1.4<br>1.2<br>1.0 ID=250uA<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25  50  75 100 125 150<br>Tj-Junction Temperature ( ℃ )<br>Fig.9 - IS—VSD<br>10<br>VGS=0V<br>1<br>125 ℃ 25 ℃<br>0.1<br>0.01<br>1E-3<br>0.0 0.2 0.4  0.6  0.8  1.0 1.2<br>Source To Drain Voltage (V)<br>VGS(th)-Threshold Voltage Nomalized<br>Source Current (A)<br>**----- End of picture text -----**<br>


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Fig.8-Normalized On Resistance Characteristics<br>2.5<br>VGS=10V<br>ID=0.5A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25  50  75  100 125 150<br>-<br>Tj Junction Temperature(°C)<br>Fig. 10 - Drain Current<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50  75  100  125 150<br>TA Temperature (°C)<br>Normalized On Resistance<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


Fig.11-PD Dissipation 

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0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50  75  100 125 150<br>TA Temperature (°C)<br>Power Dissipation  (W)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 12 - Safe Operation Area<br>10<br>1<br>R DS(on)  Limited 100us<br>300us<br>1ms<br>0.1<br>10ms<br>0.01 DC<br>TJ(MAX)=150 ℃<br>T A =25°C<br>Single Pulse<br>1E-3<br>0.1 1 10 100 1000<br>Drain-Source Voltage (V)<br>Fig. 13 -Normalized Transient Thermal Impedance<br>10<br>D=Ton/T I n   descending order<br>1 TJ,PK=TRθjA=395A+PdmꞏZθj°C/W AꞏRθjA D         0.3,0.1,0.05,0.02,0.01,single pulse=0.5,<br>0.1<br>0.01<br>S ingle Pulse<br>1E-3<br>1E-4 PDM<br>TON<br>T<br>1E-5<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 10000<br>Pulse Width (s)<br>Drain Current(A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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## **���������������������** 

|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel:3Kpcs/Reel|
|Part Number-TPQ2|Tape&Reel:3Kpcs/Reel|



- For packaging details, go to our website at https://www.mccsemi.com/pdf/ProductPackaging/SOT 363%20Package.pdf 

## *****IMPORTANT NOTICE***** 

_**Micro Commercial Components Corp**_ . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp**_ . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp**_ . and all the companies whose products are represented on our website, harmless against all damages. _**��������������������������������**_ . products are sold subject to the general terms and conditions of commercial sale, as published at 

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## *****LIFE SUPPORT***** 

MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. 

## *****CUSTOMER AWARENESS***** 

Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. **��������������������������������� �����������������������������������������������������������������������** . MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

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