BSS138

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

October 2005 

## **BSS138** 

## **N-Channel Logic Level Enhancement Mode Field Effect Transistor** 

## **General Description** 

These     N-Channel   enhancement  mode  field effect transistors are produced using  Fairchild’s proprietary, high cell density,  DMOS technology.  These products have been designed  to minimize  on-state  resistance while  provide  rugged,   reliable,  and   fast   switching performance.These products are particularly suited for low  voltage,   low  current  applications such  as small servo motor control, power MOSFET gate drivers, and other switching applications. 

## **Features** 

• 0.22 A, 50 V. RDS(ON) =  3.5Ω @ VGS = 10 V RDS(ON) =  6.0Ω @ VGS = 4.5 V • High density cell design for extremely low RDS(ON) 

- Rugged and Reliable 

- Compact industry standard SOT-23 surface mount package 

**==> picture [131 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>S<br>G<br>SOT-23<br>**----- End of picture text -----**<br>


**==> picture [64 x 72] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G S<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** TA=25[o] C unless otherwise noted 

|**Symbol**|**Parameter**|**Parameter**||**Ratings **||**Units**|
|---|---|---|---|---|---|---|
|VDSS|Drain-Source Voltage|||50||V|
|VGSS|Gate-Source Voltage|||±20||V|
|ID|Drain Current – Continuous||(Note 1)|0.22||A|
||– Pulsed|||0.88|||
|PD|Maximum Power Dissipation||(Note 1)|0.36||W|
||Derate Above 25°C|||2.8||mW/°C|
|TJ, TSTG|Operating and Storage Junction Temperature Range|||−55 to +150||°C|
|TL|Maximum Lead Temperature for Soldering<br>Purposes,1/16” from Case for 10 Seconds||1/16” from Case for 10 Seconds|300||°C|
|**Thermal Characteristics**|||||||
|RθJA|Thermal Resistance, Junction-to-Ambient||(Note 1)|350||°C/W|
|**Package Marking and Ordering Information **||||**n**|||
|**Device Marking**<br>**Device**||**Reel Size**||**Tape width**|**Quantity**||
|SS<br>BSS138|||7’’|8mm|3000 units||



BSS138  Rev C(W) 

2005 Fairchild Semiconductor Corporation 

|**Electrical Characteristics**|**Electrical Characteristics**|TA= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Units**|
|**Off Characteristics**|||||||
|BVDSS|Drain–Source Breakdown Voltage|VGS= 0 V,<br>ID= 250µA|50|||V|
|∆BVDSS<br>∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250µA,Referenced to 25°C||72||mV/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 50 V,<br>VGS= 0 V|||0.5|µA|
|||VDS= 50 V, VGS= 0 V TJ= 125°C|||5|µA|
|||VDS= 30 V,<br>VGS= 0 V|||100|nA|
|IGSS|Gate–Body Leakage.|VGS=±20 V,<br>VDS= 0 V|||±100|nA|
|**On Characteristics**<br>**(Note 2)**|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS,<br>ID= 1 mA|0.8|1.3|1.5|V|
|∆VGS(th)<br> <br>∆TJ|Gate Threshold Voltage<br>Temperature Coefficient|ID= 1 mA,Referenced to 25°C||–2||mV/°C|
|RDS(on)|Static Drain–Source<br>On–Resistance|VGS= 10 V,<br>ID= 0.22 A<br>VGS= 4.5 V,<br>ID= 0.22 A<br>VGS= 10 V,ID= 0.22 A,TJ= 125°C||0.7<br>1.0<br>1.1|3.5<br>6.0<br>5.8|Ω|
|ID(on)|On–State Drain Current|VGS= 10 V,<br>VDS= 5 V|0.2|||A|
|gFS|Forward Transconductance|VDS= 10V,<br>ID= 0.22 A|0.12|0.5||S|
|**Dynamic Characteristics**|||||||
|Ciss|Input Capacitance|VDS= 25  V,<br>VGS= 0 V,<br>f = 1.0 MHz||27||pF|
|Coss|Output Capacitance|||13||pF|
|Crss<br>RG|Reverse Transfer Capacitance|||6||pF<br>Ω|
||Gate Resistance|VGS= 15 mV, f = 1.0 MHz||9|||
|**Switching Characteristics (Note 2)**|||||||
|td(on)|Turn–On Delay Time|VDD= 30 V,<br>ID= 0.29 A,<br>VGS= 10 V,<br>RGEN= 6Ω||2.5|5|ns|
|tr|Turn–On Rise Time|||9|18|ns|
|td(off)|Turn–Off DelayTime|||20|36|ns|
|tf|Turn–Off Fall Time|||7|14|ns|
|Qg|Total Gate Charge|VDS= 25 V,<br>ID= 0.22 A,<br>VGS= 10 V||1.7|2.4|nC|
|Qgs|Gate–Source Charge|||0.1||nC|
|Qgd|Gate–Drain Charge|||0.4||nC|
|**Drain–Source Diode Characteristics**||**and Maximum Ratings**|||||
|IS|Maximum Continuous Drain–Source Diode Forward Current||||0.22|A|
|VSD|Drain–Source Diode Forward<br>Voltage|VGS= 0 V,<br>IS= 0.44 A(Note 2)||0.8|1.4|V|
|**Notes:**<br>**1.**<br>RθJAis the sum of the junction-to-case and case-to-ambient the<br>the drain pins.  RθJCis guaranteed by design while RθCAis dete||rmal resistance where the case thermal reference<br>rmined by the user's board design.|is defined|as the so|lder mounting surface of||



a) 350°C/W when mounted on a minimum pad.. 

Scale 1 : 1 on letter size paper 

**2.** Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 

BSS138 Rev C(W) 

## **Typical Characteristics** 

**==> picture [418 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 3.4<br>VGS = 10V 6.0V 4.5V<br>3.5V<br>3<br>0.8 3.0V VGS = 2.5V<br>2.6<br>0.6<br>2.2<br> 3.0V<br>2.5V<br>0.4 1.8  3.5V  4.0V<br>1.4  4.5V<br> 6.0V<br>0.2 2.0V 1  10V<br>0 0.6<br>0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On-Region Characteristics.  Figure 2. On-Resistance Variation with<br>Drain Current and Gate Voltage.<br>2 4.1<br>1.8 IVD = 220mAGS = 10V 3.5 ID = 110mAD = 110mA = 110mA<br>1.6<br>2.9<br>1.4 TA = 125A = 125 = 125 [[o]] C<br>2.3<br>1.2<br>1.7<br>1<br>TA = 25A = 25 = 25 [[o]] C<br>0.8 1.1<br>0.6 0.5<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V)<br>, NORMALIZED<br>DS(ON)<br>, DRAIN CURRENT (A)ID R<br>DRAIN-SOURCE ON-RESISTANCE<br>, NORMALIZED<br>RDS(ON) , ON-RESISTANCE (OHM)DS(ON)DS(ON)<br> DRAIN-SOURCE ON-RESISTANCE R<br>**----- End of picture text -----**<br>


**==> picture [189 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.1<br>ID = 110mAD = 110mA = 110mA<br>3.5<br>2.9<br>TA = 125A = 125 = 125 [[o]] C<br>2.3<br>1.7<br>TA = 25A = 25 = 25 [[o]] C<br>1.1<br>0.5<br>0 2 4 6 8 10<br>VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V)<br>, ON-RESISTANCE (OHM)DS(ON)DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On-Resistance Variation with Temperature.** 

**Figure 4. On-Resistance Variation with Gate-to-Source Voltage.** 

**==> picture [192 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6<br>VDS = 10V<br>TA = -55 [o] C 25 [o] C<br>0.5<br>125 [o] C<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0.5 1 1.5 2 2.5 3 3.5<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br>


**==> picture [200 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>VGS = 0V<br>0.1<br>TA = 125 [o] C<br>25 [o] C<br>0.01<br>-55 [o] C<br>0.001<br>0.0001<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VSD,  BODY DIODE FORWARD VOLTAGE (V)<br>, REVERSE DRAIN CURRENT (A)IS<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics.** 

**==> picture [208 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Body Diode Forward Voltage Variation<br>with Source Current and Temperature.<br>**----- End of picture text -----**<br>


BSS138 Rev C(W) 

## **Typical Characteristics** 

**==> picture [410 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 100<br>ID = 220mA VDS = 8V 25V f = 1 MHzVGS = 0 V<br>8 80<br>30V<br>6 60<br>CISS<br>4 40<br>COSS<br>2 20<br>CRSS<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 10 20 30 40 50<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Gate Charge Characteristics.** 

**Figure 8. Capacitance Characteristics.** 

**==> picture [421 x 360] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 5<br>SINGLE PULSE<br>RθJA = 350°C/W<br>1 100µs 4 T A  = 25°C<br>RDS(ON) LIMIT 10ms1ms<br>3<br>100ms<br>0.1 1s<br>DC 2<br>VGS = 10V<br>0.01 SINGLE PULSE<br>RθJA = 350 [o] C/W 1<br>T A  = 25 [o] C<br>0.001 0<br>0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)<br>Figure 9. Maximum Safe Operating Area.  Figure 10. Single Pulse Maximum<br>Power Dissipation.<br>1<br>D = 0.5 RθJA(t) = r(t) * RθJA<br>0.2 R θJA  = 350 [o] C/W<br>0.1 0.1<br>0.05 P(pk)<br>0.02 t1<br>0.01 0.01 TJ - TA = P  t 2 * RθJA(t)<br>SINGLE PULSE Duty Cycle, D = t 1  / t 2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>Figure 11. Transient Thermal Response Curve.<br>Thermal characterization performed using the conditions described in Note 1a.<br>Transient thermal response will change depending on the circuit board design.<br>, DRAIN CURRENT (A)ID<br>P(pk), PEAK TRANSIENT POWER (W)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


BSS138 Rev C(W) 

**==> picture [127 x 58] intentionally omitted <==**

**==> picture [52 x 44] intentionally omitted <==**

**==> picture [45 x 62] intentionally omitted <==**

**==> picture [155 x 95] intentionally omitted <==**

**==> picture [45 x 62] intentionally omitted <==**

**==> picture [81 x 44] intentionally omitted <==**

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 

© Semiconductor Components Industries, LLC 

www.onsemi.com 

**www.onsemi.com** 

**1**