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BSS127IXTSA1
Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 500mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 310ohm
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21mA
- Drain Source On State Resistance: 500ohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.055 € |
| Current stock | 500+ |
| Lead time | 7 days |
Datasheet
BSS1271
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## Small ~~-S~~ ignal Transistor
## Features
- n ~~-~~ channel
- enhancement mode
- ¢ Logic level (4.5V rated)
- ¢ dv/dt rated
- 100%lead- ~~f~~ ree; RoHS compliant
- * Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1
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PG - SOT23 -3<br>3<br>]<br>1<br>y<br>2<br>**----- End of picture text -----**<br>
## Product validation
Fully qualified according to JEDEC for Industrial Applications
## ~~Table 1. | Key Performance Parameters~~
ESD Sensitivity, ~~JESD22-A114 (HBM) | “88S~~ 0 ~~(<250V) ee~~
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@ ROHS<br>**----- End of picture text -----**<br>
Final Data Sheet
1
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
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Small ~~-S~~ ignal Transistor
CiT **n** fitneon ;
BSS127I
~~a~~
## 1 Maximum ratings at Ta=25 °C, unless otherwise specified
## ~~Table 2_—/ Maximum ratings~~
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p aramet er Symbol,ymbo Min. |aeTyp. [Max._|it Noote /I TeTe t s t ConditionCondit<br>Continuous drain current » Ff rE ae C<br>_ » !j,max—<br>Reverse diode dvidt dvidt - be | kV/us dide200 Ale Tre 150 °C<br>Operating and storage temperature Tit (65 | itso eo BIN reas.eee<br>**----- End of picture text -----**<br>
## 2 Thermal characteristics
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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|3.|Thermal|characteristics|
|p|aramet|er|symbol,ymbo|Min,aeTyp.|[Max.nit||N|o|te /||TeTe t|s|t|ConditionCondit|
|Thermal|resistance,|junction|-|minimal|
|3|Electrical|characteristics|
|at|Tj=25|°C,|unless|otherwise|specified|
|Table|4|Static|characteristics|
|p|aramet|er|Symbol,ymbo|Min,aeTyp.|[Max.||it|Noote /||TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|[Vaross|[600||-||-||v|Ves=0|V,|Ip=250|YA|
|Gate|threshold|voltage|Vos=Ves,|/p=8|HA|
|Drain|-|source|leakage current|ae|9|Ve =600=|vy, vaVes=0|yV, ORCT=|
|Gate-source|leakage|current|ess||e|[10|100,|[nA|Ves=20|V,|Vos=0|V|
|Drain-source|on-state|resistance|Foam|||33|as|Ves|t0V.|,cools|[KN]|
|Transconductance|0.007||0.015||-|—||S_||[Vosl>2I/o|Rosionymax,|/o=0.01|A|
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Final Data Sheet
3
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
## Small ~~-S~~ ignal Transistor ~~BSS127I~~
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|5|Dynamic|characteristics|
|m|aramet|er|symbol,ymbo|Min.|_|Typ.aes||Max._|umnote /||TeTe t|s|t|ConditionCondit|
|Input|capacitance|css|fe|fat|ep|Ves=0|V,|Vos=25|V,|f1|MHz|
|Output|capacitance|Coss|ses|[ep|Ves=0|V,|Vos=25|V,|1|MHz|
|Reverse|transfer|capacitance|Ces|[esp|Ves=0|V,|Vos=25|V,|f1|MHz|
|.|Vpp=300|V,|Ves=10|V,|Ip=0|.|01|A,|
|or|Vpp=300|V,|Ves=10|V,|In=0|.|01|A,|
|.|Vop=300|V,|Ves=10|V,|/p=0|.|01|A,|
|.|Vpp=300|V,|Ves=10|V,|Ip=0|.|01|A,|
|Table|6|Gate|charge|characteristics|
|arameter|ymbo|Min.||Typ.|[Max._||ote /|Test|Condition|
|Gate|to|source|charge|las|ses|fo.ozs|-|[nc|Vop=300|V,|/b=0.01|A,|Ves=0|to|10|V|
|Gate|to|drain|charge|ae|seit|fe|[nc|Vop=300|V,|/p=0.01|A,|Ves=0|to|10|V|
|Gate|charge|total|la,||e|0.65||-|[nC]|Von=300|V,|/n=0.01|A,|Ves=0|to|10|V|
|Gate|plateau|voltage|Veen||-|(356||-||v|||Vop=300|V,|/p=0.01|A,|Ves=0|to|10|V|
|Table|7|Reverse|diode|
|arameter|ymbo|Min.|||ote /|Test|Condition|
|Typ.|Max.|||
|Diode|continous|forward|current|ls|ee|0.016|Ta=25|°C|
|Diode|forward|voltage|Veo|ss|-——||0.82|4.2||V__|||Vos=0|V,|r=0.016|A,|Tj=25|°C|
|.|Ver=300|V,|I-=0|.|016|A,|
|Ver=300|V,|I-=0.016|A,|
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## Table 7 Reverse diode
Final Data Sheet
4
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
## Small ~~-S~~ ignal ~~BSSt27b Transistor~~
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## 4 Electrical characteristics diagrams
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Diagram 1: Power dissipation Diagram 2: Drain current<br>0.6 le a A CO<br>rT | | | | | | | |<br>PT) rT; | |; | | | | i<br>0.025 |} | |<br>05 | oeTTT ESSE| | | | | | ~~+|<br>a<br>: a<br>0.029 - | |SJ<br>oA PENT | ,.HREBSSaee<br>a a<br>: rf[ | | NY | | | 1<br>eo 03 | | UIAEL Loosfe EF| SENNSSSSS<br>3 \ ao CUdTCdC(SsSC*drSCtC~*drSC<br>& CX Ud<br>\ = rT | | | | IN | |]<br>——<br>Nee rT | | ~~; [| | NT] Ti]<br>02 0010 | |<br>a<br>\ a a SC CO GO<br>X rT | | |; | | | \ |<br>0 4 ae\ 0 . 005 |<br>MTT [| FT [| <7; if i \ i<br>rT | | | | | | |\ 1<br>. rT | | |; [| | | |/Y{ 1<br>00 ass 0 . 000 —————-—-—_<br>0 40 80 120 160 0 40 80 120 160<br>Ta [°C] Ta [°C]<br>Prot=f( Ta) Ip=F(Ta); Ves>10 V<br>Diagram 3: Safe operating area Diagram 4: Max . transient thermal impedance<br>SSEPNT NE0 stI SseCC seiCCasa otCeraneRE |<br>PANT NNR CTT CCM CEI ECM CTCC E<br>ECTICIZTNTR.” RTT ET ee mati<br>NH] age E P RICE LAr |<br>HASSAN 10.2 oa eres—_-EC EE<br>10 2 ZAR iN alll eee ae ee ee a |<br>———EOOFS ms aeHH 0,4meeatepee LETC HTT<br>-——-_ AA HHASHH oS LTTE UTM ETT CUT TT Th<br>ze NN RTI LITT il<br>< Ht YI tT THT "199 ms\ |{1 = 10' 450.02 | emeee me eset me ge EE<br>DC \ N f TT TTT nT Th<br>go o + | tittyYt\ CAI onon<br>SS A2 eeeeeeee Q<br>SS EN Pare oeet TE TTI TIM TTA<br>ST | ae LETT UNE UMC IML VC<br>a Sao<br>LT TTT OE EET ET ||<br>ee ill |<br>0 a a wo e aUME ELUNEa LTTEFTTH<br>10° 10! 10? 10° 10 ° 10 7 10 ° 10 7 10 7 10° 10' 107 10°<br>Vos [V] t, [s]<br>Ip=f(Vos); Ta=25 °C; D=0; parameter: tp Zinsa=f(tp); parameter: D=t)/T<br>**----- End of picture text -----**<br>
Final Data Sheet
5
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
Small ~~-S~~ ignal ~~BSS127I Transistor~~
Tnfir ~~C~~ in neon ;
~~et~~
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Diagram 5: Typ. output characteristics Diagram 6: Typ . drai n- source on resistance<br>0.030 1000<br>PTEEEEE LLL et<br>28 oT<br>ee e<br>0.025 ee<br>YA 800<br>| | | ZUea | tit y<br>noo yp<br>eae Zee<br>J 600<br>Zoe COA OE<br>a | COG,——— |3<br>0.010 ifWi al 3.6 Vd|) & 400 e 272 s= SV<br>Wy e<br>Aefo ST7 1<br>wm> fot lif, | ft |}| wl<br>4<br>Aa r e<br>s oot |. | 1 48% |Ity} o; ft |TE| |<br>0 2 4 6 8 10 0 . 000 0 . 005 0 . 010 0 . 015 0 . 020 0 . 025<br>Vos [V] bb [A]<br>Ip=f(Vos); T7=25 °C; parameter: Ves Rosvon)=f(/p); T=25 °C; parameter: Ves<br>Diagram 7: Typ. transfer characteristics Diagram 8: Typ . forward transconductance<br>~ EETTT ET) | EEE<br>0 . 020 PLTEET TP Ey] pf ft pp EP |<br>| 0.020 ra —<br>SeeELT eeeae<br>0.015 EET LT yy fp EE PEett<br>2soe lilti ti yi tie 0.015 LE LeTr aeTT<br>a tt tT tT tA RL EeET<br>a<br>_FEEL _ ACCEL<br>vop 0 tt1 i 2ty ti3 tt4 ty5 0.000g | 0.005| | 0.010| 0 . |015 |0 . 020<br>Ves [V] fo [A]<br>Ib=f(Ves); | Vos|>2|/o|Ros(on)max gis=f(Ip); T=25 °C<br>**----- End of picture text -----**<br>
Final Data Sheet
6
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
ignal istor Small ~~-~~ Sign Transis BSS127|
Intineo
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: Drain - source on -s tatate resistance 10: Typ . gate threshold voltage<br>| {| | 3.5 | | | fl {|P| oftl<br>a Pt we<br>oe || | | | [|| | ||<br>900 oo a<br>PRP RS eeE TE<br>~ 700sea ae 25 P| | |_| =| | | Fya<br>ae SPEELG [| | |<br>3 60077dOJ] ZAYYST<br>_, 2.0 Ft | | | | fo<br>emSSEAt}TT 2 ee<br>i Sea=e 215 Ptan| fd fF | ] ||<br>& 400 Paap rt ft ff<br>er anZanrT] [inanry | Td<br>300ee PEnn=<br>ae<br>00<br>Soe P| | | f P| | ff_<br>08 | ||tt| | |P| | || |<br>0 % - 20 1 ea 40 180<br>| — — o= “<br>T, [°C]<br>> Ves=10V : Ip=8 UA; par:<br>capacitances —— iod<br>——<br>- ——<br>S =S —<br>———————<br>10 ==<a n= e= neeeee====— —— ao{==4m 1885S3soe max e iseeeeeeee+44<br>—— —<br>Tt<br>a<br>—— HERO=| |__| SREE_£ | SEEDED<br>we \ \— Py | ———— wo Se s a= c a e ceaee<br>{S======S=poe st TI<br>HA<br>10° ———<br> ===<br>eer eeeeeeee<br>S [|===ft cs) ||| 10° SSH Sa<br>; S eeS a S ajie( a nnnEEEaE<br>ya]pi) Seana<br>10 ;ii5 lf 3 ar o 28<br>BR RRREEEEEVos [V] i ue eS<br>- T=25°C<br>**----- End of picture text -----**<br>
Final[Data][Sheet]
7
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 8 ~~-~~ 17
Small ~~-S~~ ignal Transistor
~~BSS127b~~
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10 ee eee eee eee, 700 Pt | tT fl hE ht hE<br>ott tt ttt tT tT tA Vt TY | cot | | | | | | | | | | TT<br>PT tt et EE TAP EA A P| | | | ft te tt rt hp<br>af lt ttt ttt yt t/t tlt eort | | | | | | | (AT<br>titty tt lA FE GZ | | | {| | | | | PAT ff<br>s+ tt ttt tT | YE TA tT 7 Tt wot || | | | | |r | tf<br>ei] t ttt A A | 7 P| | | | | tl tT Urey<br>6 1200 x faa vt sor |_| | | | VT | | tt<br>Se Pt tt tt a / a = | | | | | vy<br>g sillilii7A [iti}] AEA|“) 7,fit| || | je,8 | {| | A{aA | | ft ft ft tt<br>,L-t ttt tT tAT YET YT TT | jet tT ECL TT<br>Bae eee eee Pt yt | | | | | hE ht<br>gst Yi | ttt tT tte tT tt TT sot vt | | | | | | | [ To<br>PPE TT ety tT tt ET TT [7i | | {| | [| | | ft ft ft<br>otf tt ttt tt tT tt tt et sot | | | | | | | | [ Tl<br>PAL TT TE TT Tt ET Pt | | ft ft ft ET<br>wife tt tt EE TE TT TT sot + /| | | | | | | [ tf<br>lite te? py pt Pt | | ft ft ft ET<br>of tt tt itt ttt tt tt te sort} tl | | | | | [ | Tt<br>00 O 0 1 02 03 04 O 0 5 06 O7 08 - 60 - 20 20 60 100 140 180<br>Qgate [nC] Tj [°C]<br>**----- End of picture text -----**<br>
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Final Data Sheet
8
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
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Small ~~-S~~ ignal Transistor ~~BSS127I~~
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## Revision History
## BSS1271
Revision: 2021 ~~-0~~ 3 ~~-1~~ 7, Rev ~~.~~ 2.1
|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects (major changes since last revision)|||||||||||
|2.0||||2021~~-~~01~~-~~25||||Release of final version|||||||||||
|2.1||||2021~~-0~~3~~-~~17||||Updatetechnologynaming|||||||||||
Trademarks All referenced product or service names and trademarks are the property of their respective owners.
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com
Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie’) ~~.~~
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~
## Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www. ~~i~~ nfineon ~~.~~ com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~
The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ~~.~~ Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ~~.~~ If they fail, it is reasonable to assume that the health of the user or other persons may be endangered ~~.~~
Final Data Sheet
10
Rev ~~.~~ 2 ~~.~~ 1, 2021 ~~-0~~ 3 ~~-~~ 17
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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