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BSS126IXTSA1
Power MOSFET, N Channel, 600 V, 21 mA, 280 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: SIPMOS
- Qualification: -
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21mA
- Drain Source On State Resistance: 280ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.058 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSS126I** EE Gifineon
## **MOSFET**
## **SIPMOS[®]**
## **Features**
_v_ /d _t_
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**----- Start of picture text -----**<br>
SOT-23<br>3<br>1<br>2<br>**----- End of picture text -----**<br>
|**Parameter**<br>~~Table~~<br>~~1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|600|V|
|_R_DS(on),max|700|Ω|
|_I_DSS,min|0.007|A|
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**----- Start of picture text -----**<br>
Drain<br>Pin 3<br>Gate<br>Pin 1<br>Source<br>Pin 2<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSS126I<br>~~Type/OrderingCode |~~|PG-SOT23<br>~~|~~|Sh<br>|-<br>|
Final Data Sheet
1
**SIPMOS[®] �Small-Signal-Transistor BSS126I**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.�2.0,��2020-06-02
**SIPMOS[®] �Small-Signal-Transistor BSS126I**
**==> picture [120 x 53] intentionally omitted <==**
## **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|0.021<br>0.017|A|_T_A=25°C<br>_T_A=70°C|
|Pulsed drain current|_I_D,pulse|-|-|0.085|A|_T_A=25°C|
|Reversedioded_v_/d_t_|d_v_/d_t_|-|-|6|kV/µs|_I_D=0.016A,_V_DS=20V,<br>d_i_/d_t_=200A/µs,_T_j,max=150°C|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|ESD sensitivity (HBM) as per<br>JESD22-A114|-|-|-|Class 0<br>(0 >250<br>V)|<br> <br>-|-|
|Power dissipation|_P_tot|-|-|0.50|W|_T_A=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - ambient,<br>minimal footprint|_R_thJA|-|-|250|K/W|-|
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|600|-|-|V|_V_GS=-5V,_I_D=250µA|
|Gate threshold voltage|_V_GS(th)|-2.7|-2.0|-1.6|V|_V_DS=3V,_I_D=8µA|
|Drain-source cutoff current|_I_D(off)|-<br>-|-<br>-|0.1<br>10|µA|_V_DS=600V,_V_GS=-5V,_T_j=25°C<br>_V_DS=600V,_V_GS=-5V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|On-state drain current|_I_DSS|7|-|-|mA|_V_GS=0V,_V_DS=25V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|320<br>280|700<br>500|Ω|_V_GS=0V,_I_D=3mA<br>_V_GS=10V,_I_D=16mA|
|Transconductance|_g_fs|0.008|0.017|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=0.01A|
Final Data Sheet
3
Rev.�2.0,��2020-06-02
**SIPMOS[®] �Small-Signal-Transistor BSS126I**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|21|-|pF|_V_GS=-5V,_V_DS=25V,_f_=1MHz|
|Output capacitance|_C_oss|-|2.4|-|pF|_V_GS=-5V,_V_DS=25V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|1.0|-|pF|_V_GS=-5V,_V_DS=25V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6.1|-|ns|_V_DD=300V,_V_GS=-3B7V,_I_D=0.01A,<br>_R_G=6Ω|
|Rise time|_t_r|-|9.7|-|ns|_V_DD=300V,_V_GS=-3B7V,_I_D=0.01A,<br>_R_G=6Ω|
|Turn-off delay time|_t_d(off)|-|14|-|ns|_V_DD=300V,_V_GS=-3B7V,_I_D=0.01A,<br>_R_G=6Ω|
|Fall time|_t_f|-|115|-|ns|_V_DD=300V,_V_GS=-3B7V,_I_D=0.01A,<br>_R_G=6Ω|
## **Table�6�����Gate�charge�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|0.05|-|nC|_V_DD=400V,_I_D=10mA,_V_GS=-3to5V|
|Gate to drain charge|_Q_gd|-|1.2|-|nC|_V_DD=400V,_I_D=10mA,_V_GS=-3to5V|
|Gate charge total|_Q_g|-|1.4|-|nC|_V_DD=400V,_I_D=10mA,_V_GS=-3to5V|
|Gate plateau voltage|_V_plateau|-|0.10|-|V|_V_DD=400V,_I_D=10mA,_V_GS=-3to5V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|0.016|A|_T_A=25°C|
|Diode pulse current|_I_S,pulse|-|-|0.064|A|_T_A=25°C|
|Diode forward voltage|_V_SD|-|0.81|1.2|V|_V_GS=-5V,_I_F=16mA,_T_j=25°C|
|Reverse recovery time|_t_rr|-|160|-|ns|_V_R=300V,_I_F=0.01A,<br>d_i_F/d_t_=100A/µs|
|Reverse recovery charge|_Q_rr|-|13.2|-|nC|_V_R=300V,_I_F=0.01A,<br>d_i_F/d_t_=100A/µs|
Final Data Sheet
Rev.�2.0,��2020-06-02
4
**SIPMOS[®] BSS126I**
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**----- Start of picture text -----**<br>
0.6 0.025<br>0.5<br>PT T TTT ry) 0.020 F errey<br>0.4 N SE | E NE<br>SNES | 0.015 ENCE<br>Fo | EN | ft tf ~<br>0.3<br>ON ee ee<br>0.010<br>aN —t[-tL-EIN |<br>0.2<br>0.005<br>0.1 See NCE) EEE<br>TT PEEL<br>0.0 FET ELEL RN 0.000 ett-E} Et<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br>G P tot=f( T A) T I D=f( T A V GS ≥ O<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [-1] 10 [3]<br>10 µs single pulse<br>KT OE IEC i 0.010.02 a a |<br>ATH ION 100 µs TH i 0.05 CO CO<br>0.1<br>Set eannihy 1 ms NUTT I 0.2 PA TIE TT<br>0.5<br>10 [-2] TOTTI NUTINI | CHT<br>IAL NUE NST T c<br>ee 10 ms LU I oe<br>a ee ee ee a LE ETS eal<br>a A DC NEEL oo l a Crs siSaie<br>ze© tts 10 [2] ml En<br>ATIC NATIT |" Se AHH<br>Jf \ Carri LLCTT<br>10 [-3]<br>— a aoe ee\ Et ienp) eaeAUU<br>=}Tet +--+} PRIMLTT LAME EET<br>re AL LULL Al<br>crm Ye<br>10 [-4] rT | 10 [1] TIT TTETM<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>V DS [V] t p [s]<br>I D=f( V DS T A D t p Z thJA=f( t p D = t p/ T<br>I D thJA<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
5
**SIPMOS[®] BSS126I**
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**----- Start of picture text -----**<br>
0.04 1000 ee Oe<br>10 V 1 V 900 i es Oe<br>0.5 V 800<br>0.03 P|) | | | LameZ eei e ee Oe -0.2 V Oe 0 V Oe 0.2 V 0.5 V<br>700<br>0.2 V -0.1 V 0.1 V<br>y Z- — TT<br>0.1 V<br>600<br>VA _ ye a<br>0 V<br>< 0.02 ¢ -YA -0.1 V — 500 esies e e eOe e<br>1 V<br>” -0.2 V OeOO<br>400<br>7 6 _TTT | | —t—eegee He 10 V<br>300<br>0.01<br>y, 200 a<br>J a a<br>100<br>ZC C| a BEEEEEEEa<br>0.00 0<br>0 4 8 12 16 0.00 0.01 0.02 0.03 0.04<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>0.025 0.025<br>Z<br>0.020 0.020<br>P| | | fA | ty Ee<br>ee eee<br>0.015 0.015<br>0.010 0.010<br>ee Pe ee eeeee<br>P| | f7) | | yy LAtt<br>7 A<br>0.005 0.005<br>TT<br>P| [AT] | Py}<br>pe)<br>0.000 0.000<br>| | ct ty EE TE EE<br>-2 -1 0 1 0.000 0.005 0.010 0.015 0.020<br>V GS [V] I D [A]<br>I D=f( V GS V DS T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**SIPMOS[®] BSS126I**
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**----- Start of picture text -----**<br>
1600 -1.0<br>max<br>ptt tt tT Pe TT a OO<br>1400 max<br>SEE EEE A || -1.5 GES<br>1200<br>PPE | EP SRE<br>eee a ee ee<br>1000 Pt | | | | | Ye ft tf i ee ee eee<br>-2.0<br>Pt; tT et A aSOS ST<br>eee ee eee eee<br>800 Pl L a<br>typ<br>-2.5 typ<br>600 P| | LdPrt |Pe| ft er | Ps]SPREEa ff poet pr<br>Pt ett | | | ee a SO et<br>Cane ane Se<br>400<br>Pt | | feetZ TT Tf -3.0 a<br>200 | tr TT PeeSE min<br>es Ss<br>0 Pt | | | ft tfeett ft tf -3.5 a<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j °c] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V DS I I D<br>10 [2] [| | | | | | |... TT) 10 [-1] a SN GG GO GG<br>25 °C<br>25 °C, max<br>SSSSaaeaeea= | i 150 °C Eee<br>mtFRR Ciss i ee 150 °C, max (ni ay e<br>SLT TTT I TT S RRS008/0/ (000) 200088<br>10 [1] BNE e eee ELLELAA Le<br>=<br>3 10 [-2] ff<br>~ LPP<br>Coss — ee ees ee ee ee<br>\ EET PPT) | GRRRee<br>10 [0]<br>—————a PT i<br>Crss<br>See P ittTT TTT thETT PE ee EE ET ET<br>PpPEEEEE{| [| | | fT Eeetf ft tT tT yt tt yt CLLEGE EEE EEE<br>eee) LETT<br>10 [-1] 10 [-3]<br>0 10 20 30 0.0 0.5 1.0 1.5 2.0<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [<br>DS(on) GS(th)<br>R V<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**SIPMOS[®] BSS126I**
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**----- Start of picture text -----**<br>
6 700<br>5 120V 300V 480V<br>4 660<br>Cech ch titi it tte<br>3 ee ee eee<br>2 | 620<br>et] TP ey yy Le<br>ee ee = /<br>1<br>0 ee 580<br>ee eeeeee<br>-1 peet<br>tT tT | | yy Le<br>-2 540<br>-3 PE<br>TE TE EP LEEEE<br>-4 500<br>0.0 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180<br>Q gate [nC] T j [°C]<br>V GS=f( Q gate I D V DD I D=f( V GS V GS T j<br>GS<br>V<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
## **Diagram Gate charge waveforms**
Final Data Sheet
8
**SIPMOS[®] BSS126I**
Final Data Sheet
9
**SIPMOS[®] BSS126I**
## BSS126I
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-06-02|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
10
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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