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BSS126H6906XTSA1
Power MOSFET, N Channel, 600 V, 21 mA, 500 ohm, SOT-23, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:21mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):280o; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21mA
- Drain Source On State Resistance: 500ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 22500 |
| Price | 0.18 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSS126** ## **SIPMOS[®] Small-Signal-Transistor** ## **Features** - N-channel - Depletion mode - d _v_ /d _t_ rated - Available with V indicator on reel GS(th) **==> picture [186 x 102] intentionally omitted <==** **----- Start of picture text -----**<br> Product Summary<br>V DS 600 V<br>R 700 Ω<br>DS(on),max<br>I 0.007 A<br>DSS,min<br>PG-SOT-23<br>**----- End of picture text -----**<br> - Pb-free lead plating; RoHS compliant - Qualified according to AEC Q101 - Halogen-free according to IEC61249-2-21 **==> picture [460 x 56] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Type|Package|Pb-free|Tape and Reel Information|Marking| |BSS126|PG-SOT-23|Yes|H6327: 3000 pcs/reel|SHs| |BSS126|PG-SOT-23|Yes|H6906: 3000 pcs/reel sorted in|V|GS(th)|bands|1)|[1)]|SHs| **----- End of picture text -----**<br> ## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified **==> picture [469 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Value|Unit| |Continuous drain current|I|D|T|A=25 °C|0.021|A| |T|A=70 °C|0.017| |Pulsed drain current|I|D,pulse|T|A=25 °C|0.085| |I|D=0.016 A,| |V|DS=20 V,| |Reverse diode d|v|/d|t|d|v|/d|t|6|kV/µs| |d|i|/d|t|=200 A/µs,| |T|=150 °C| |j,max| |Gate source voltage|V|GS|±20|V| |ESD sensitivity (HBM) as per| |Class 0 (0 >250 V)| |JESD22-A114| |Power dissipation|P|tot|T|A=25 °C|0.50|W| |Operating and storage temperature|T|j,|T|stg|-55 ... 150|°C| |IEC climatic category; DIN IEC 68-1|55/150/56| **----- End of picture text -----**<br> 1) see table on next page and diagram 11 **Rev. 2.1** **page 1** **2012-03-14** |||||**BSS126**|**BSS126**| |---|---|---|---|---|---| |**Parameter**<br>**Thermal characteristics**<br>~~ee~~|||**Symbol **|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|| |Thermal resistance,<br>junction - ambient<br>_R_thJA<br>minimal footprint<br>-<br>-<br>250<br>K/W<br>~~tt~~<br>~~tt ty~~|||||| ||**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified|| ||**Static characteristics**||||| ||Drain-source breakdown voltage||_V_(BR)DSS|_V_GS=-5 V,_I_D=250 µA<br>600<br>-<br>-|V| ||Gate threshold voltage<br>Drain-source cutoff current<br>Gate-source leakage current||_V_GS(th)<br>_V_DS=3 V,_I_D=8 µA<br>-2.7<br>-2.0<br>-1.6<br>_I_D(off)<br>_V_DS=600 V,<br>_V_GS=-5 V,_T_j=25 °C<br>-<br>-<br>0.1<br>_V_DS=600 V,<br>_V_GS=-5 V,_T_j=125 °C<br>-<br>-<br>10<br>_I_GSS<br>_V_GS=20 V,_V_DS=0 V<br>-<br>-<br>100<br>~~PE=Frr~~<br>~~pt~~||µA<br>nA| ||On-state drain current<br>Drain-source on-state resistance<br>Transconductance||_I_DSS<br>_V_GS=0 V,_V_DS=25 V<br>7<br>-<br>-<br>_R_DS(on)<br>_V_GS=0 V,_I_D=3 mA<br>-<br>320<br>700<br>_V_GS=10 V,_I_D=16 mA<br>-<br>280<br>500<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=0.01 A<br>0.008<br>0.017<br>-<br>~~Oe~~<br>~~pt~~<br>~~tT tt~~||mA<br>Ω<br>S| ||**Threshold voltage****_V_ GS(th) sorted in bands**|**sorted in bands2)**|||| ||J||_V_GS(th)|_V_DS=3 V,_I_D=8 µA<br>-1.8<br>-<br>-1.6|V| ||K|||-1.95<br>-<br>-1.75|| ||L|||-2.1<br>-<br>-1.9|| ||M|||-2.25<br>-<br>-2.05|| ||N|||-2.4<br>-<br>-2.2|| 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. **Rev. 2.1** **page 2** **2012-03-14** ||||||**BSS126**|**BSS126**| |---|---|---|---|---|---|---| |||||||| |**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Dynamic characteristics**||||||| |_I_D=f(_V_GS);_V_DS=3 V;_T_j=25 °C<br>_C_iss<br>-<br>21<br>28<br>pF<br>Output capacitance<br>_C_oss<br>-<br>2.4<br>3.2<br>Reverse transfer capacitance<br>Crss<br>-<br>1.0<br>1.5<br>Turn-on delay time<br>_t_d(on)<br>-<br>6.1<br>9.2<br>ns<br>Rise time<br>_t_r<br>-<br>9.7<br>14.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>14<br>21<br>Fall time<br>_t_f<br>-<br>115<br>170<br>Gate Charge Characteristics<br>_V_GS=-5 V,_V_DS=25 V,<br>_f_=1 MHz<br>_V_DD=300 V,<br>_V_GS=-3…7 V,<br>_I_D=0.01 A,_R_G=6Ω<br>~~oe~~||||||| |Gate to source charge|_Q_gs||-|0.05|0.08|nC| |Gate to drain charge|_Q_gd|_V_DD=400 V,<br>_I_D=10 mA,|-|1.2|1.8|| |Gate charge total|_Q_g|_V_GS=-3 to 5 V|-|1.4|2.1|| |Gate plateau voltage|_V_plateau||-|0.10|-|V| |**Reverse Diode**||||||| |Diode continous forward current|_I_S||-|-|0.016|A| |||_T_A=25 °C||||| |Diode pulse current|_I_S,pulse||-|-|0.064|| |Diode forward voltage|_V_SD|_V_GS=-5 V,_I_F=16 mA,<br>_T_j=25 °C|-|0.81|1.2|V| |Reverse recovery time|_t_rr|_V_R=300 V,_I_F=0.01 A,|-|160|240|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|13.2|19.8|nC| **Rev. 2.1** **page 3** **2012-03-14** **BSS126** **1 Power dissipation** ## **2 Drain current** _P_ tot=f( _T_ A) _I_ D=f( _T_ A); _V_ GS≥10 V **==> picture [470 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 0.6 0.025<br>0.5<br>0.02<br>0.4<br>0.015<br>0.3<br>0.01<br>0.2<br>0.005<br>0.1<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I D=f( V GS); V DS=3 V; T j=25 °C Z thJA=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [-1] 10 [[3]]<br>10 µs<br>limited by on-state<br>resistance<br>100 µs<br>10 [-2] 1 ms<br>10 ms<br>0.5<br>10 [[2]]<br>0.2<br>DC<br>0.1<br>10 [-3]<br>0.05<br>0.02 single pulse<br>0.01<br>10 [-4] a 10 [[1]]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]] 10 [[0]] 10 [[1]] 10 [[2]]<br>V DS [V] t [s]<br> [W] [A]<br>P tot I D<br> [A] [K/W]<br>I D<br>thJA<br>Z<br>**----- End of picture text -----**<br> **==> picture [226 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [[3]]<br>0.5<br>10 [[2]]<br>0.2<br>0.1<br>0.05<br>0.02 single pulse<br>0.01<br>10 [[1]]<br>10 [[-4]] 10 [[-3]] 10 [[-2]] 10 [[-1]] 10 [[0]] 10 [[1]] 10 [[2]]<br>t p [s]<br> [K/W]<br>thJA<br>Z<br>**----- End of picture text -----**<br> **Rev. 2.1** **2012-03-14** **page 4** **BSS126** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [226 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 0.04<br>10 V<br>1 V<br>0.5 V<br>0.03<br>0.2 V<br>0.1 V<br>0 V<br>0.02 -0.1 V<br>-0.2 V<br>0.01<br>0<br>0 4 8 12 16<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br> **==> picture [227 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>-0.2 V 0 V 0.1 V0.2 V 0.5 V<br>-0.1 V<br>900<br>800<br>700<br>600<br>500<br>1 V<br>400 10 V<br>300<br>200<br>100<br>0<br>0 0.01 0.02 0.03 0.04<br>I D [A]<br>]<br>[ Ω<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); _V_ DS=3 V; _T_ j=25 °C **8 Typ. forward transconductance** _g_ fs=f( _I_ D); _T_ j=25 °C **==> picture [468 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 0.025 0.025<br>0.02 0.02<br>0.015 0.015<br>0.01 0.01<br>0.005 0.005<br>0 0<br>-2 -1 0 1 0.000 0.005 0.010 0.015 0.020<br>V GS [V] I D [A]<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> **Rev. 2.1** **2012-03-14** **page 5** **BSS126** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D= 0.016mA; _V_ GS=0 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ DS=3 V; _I_ D = 8 µA parameter: _I_ D **==> picture [470 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 1600 -1<br>1400<br>-1.5<br>1200 98 %<br>1000 typ<br>-2<br>98 %<br>800<br>-2.5<br>600<br>2 %<br>400<br>typ<br>-3<br>200<br>0 -3.5<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>11 Threshold voltage bands 12 Typ. capacitances<br>I D=f( V GS); V DS=3 V; T j=25 °C C =f( V DS); V GS=-3 V; f =1 MHz<br>0.1 100<br>Ciss<br>10<br>A<br>0.01<br>8 µA<br>Coss<br>N M L K J<br>1<br>Crss<br>0.001 FC 0.1<br>-2.5 -2 -1.5 -1 0 10 20 30<br>V GS [V] V DS [V]<br>]<br>Ω<br> [<br> [V]<br>DS(on)<br>R V GS(th)<br> [mA] [pF]<br>I D C<br>**----- End of picture text -----**<br> **Rev. 2.1** **page 6** **2012-03-14** **BSS126** **13 Forward characteristics of reverse diode** ## **15 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=0.1 A pulsed _I_ F=f( _V_ SD) parameter: _V_ DD **==> picture [470 x 635] intentionally omitted <==** **----- Start of picture text -----**<br> parameter: T j parameter: V DD<br>0.1 6<br>150 °C 25 °C 0.2 VDS(max) 0.5 VDS(max)<br>5<br>4<br>150 °C, 98% 0.8 VDS(max)<br>3<br>25 °C, 98% 2<br>0.01 1<br>0<br>-1<br>-2<br>-3<br>0.001 f -4 li<br>0 0.5 1 1.5 2 2.5 0 0.4 0.8 1.2 1.6<br>V SD [V] Q gate [nC]<br>16 Drain-source breakdown voltage<br>I D=f(=f( V GS); ); V DS=3 V; =3 V; T j=25 °C=25 °C<br>700<br>660<br>620<br>580<br>540<br>500<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br> [A] I F V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> ## **16 Drain-source breakdown voltage** _I_ D=f(=f( _V_ GS); ); _V_ DS=3 V; =3 V; _T_ j=25 °C=25 °C **Rev. 2.1** **2012-03-14** **page 7** **BSS126** **Package Outline:** **Footprint:** **Packaging:** Dimensions in mm **Rev. 2.1** **page 8** **2012-03-14** **BSS126** **Rev. 2.1** **page 9** **2012-03-14**
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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