BSS123TA

Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount

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Manufacturer: DIODES INC.
Product type: Single MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 300mW
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: SOT-23
Drain Source Voltage Vds: 100V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 170mA
Drain Source On State Resistance: 6ohm
Gate Source Threshold Voltage Max: 2.2V

Delivery and price
Units per pack	9000
Price	0.069 €
Current stock	10+
Lead time	30 days

Datasheet

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 

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ISSUE 3 - JANUARY 1996 o 

PARTMARKING DETAIL ~SA 

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DB Ss<br>G<br>ABSOLUTE MAXIMUM RATINGS. $OT23<br>PARAMETER | SYMBOL L VALUE UNIT<br>Drain-Source Voltage T Vos 100 V<br>Drain-Gate Voltageremnant A Nt ' VogaA tr' 100er nn ann Une etreVv dene urn vemmre nah<br>a Se ar eee ected<br>Continuous Drain Current at Tap y228°C Llp i 170 mA<br>iactehhasiihtaGeahcinesnicdaanacieA SARIN. Lea SE<br>PulsedttheDrain Current en mene mt Ren rhea' tom rarer et nr|{eAlerts680Hirt dns rate ene snnenearemAtna €hentia<br>Gate-Source Voitage | Ves +20 | v<br>Peak Gate-Source Voltage Vesa £20 Vv<br>Power Dissipation at T,,,4y=25°C Prot 360 mW<br>Operating and Storage Ternperature Range i TT stg -§5 to +150 °C<br>ELECTRICAL CHARACTERISTICS (at Tamp = 25°C unless otherwise stated).<br>PARAMETER | SYMBOL [ MIN. | MIN. | MAX. UNIT) CONDITIONS.<br>Drain-Source | BVogs 100 | Vv Ip=0.25MA, Vgg=0V<br>BreakdownVoltage|<br>Gate-Source Threshold | Vggyn, | 0.8 12.2 128 | V | Ip=1MA. Vos= Vg<br>Voltage ne ee ae 7 nl Ahora TORTI ee<br>Gate-Body Leakage Ioss | M0 BO | A | Vig 20, [VgeOV]<br>Zero Gate Voltage | lose i 1 118 pA T Vog= 100V, Vagg=0V<br>Drain Current i 12 | 60 HA | Vng=100V, Vag=O0V, T=125°C(2)<br>Static Drain-Source :i Rosten) ff15 Té20 Q[RA ia| Vpge20V, VggOVIp=100mMA<br>lLForward rra a<br>Transconductance(1H2) On [e riz | mS | Voe=25V, 1p-100mA<br>input Capacitancea(2) |aCie eae|: 30| pF cove nent ascent ne mente seamen ine<br>Common Source CS rn es pF7<br>Output Capacitance (2) es ee es ee : Vig25V, Vgg2OV, f= IMHz<br>Reverse Transfer 1 Cue a ra pF:<br>Riseen Time {2)(3) it a moenenteommennns ViBOV, Iy=280MA<br>Turn-O f Delay Time (23) | tao HB fs<br>Fall Time (2)(3) it 25 ns<br>(1) Measured under pulsed conditions. Width=300us. Duty cycle <2% (2) Sample test.<br>ae3)  typicalSwitching characteristicsti a graphsd with see500 AUERsourceTiteimpedance datasheet, and <5Sns rise time on a p pulse ggenerator<br>**----- End of picture text -----**<br>


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Updated at June 5, 2026

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