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BSS123IXTSA1
Power MOSFET, N Channel, 100 V, 190 mA, 6 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 500mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 190mA
- Drain Source On State Resistance: 6ohm
- Gate Source Threshold Voltage Max: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.047 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSS123I** ES Giineon
## **MOSFET OptiMOS[TM]**
## **Features**
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PG-SOT23-3<br>3<br>1<br>2<br>**----- End of picture text -----**<br>
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|||||||
|---|---|---|---|---|---|
|Drain|
|Table|1|Key|Performance|Parameters|Pin 3|
|Parameter|Value|Unit|
|V|DS|100|V|Pin 1Gate|
|R|DS(on),max|GS|6|Ω|Source|
|R|DS(on),max|GS|10|Ω|Pin 2|
|I|D|0.19|A|
|ESD Sensitivity,|
|JESD22-A114 (HBM)|[class 0 (<250V)]|
**----- End of picture text -----**<br>
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||||||
|---|---|---|---|---|
|Package|Marking|
|Type/OrderingCode|||||Related|Links|
|BSS123I|PG-SOT23|AIs|-|
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Final Data Sheet
1
**OptiMOS[TM] �Small-Signal-Transistor,�100�V BSS123I**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.�2.1,��2021-02-01
**OptiMOS[TM] �Small-Signal-Transistor,�100�V BSS123I**
**==> picture [120 x 53] intentionally omitted <==**
## **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|0.19<br>0.15|A|_V_GS=10V,_T_A=25°C<br>_V_GS=4.5V,_T_A=70°C|
|Pulsed drain current|_I_D,pulse|-|-|0.77|A|_T_A=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|2.0|mJ|_I_D=0.19A,_R_GS=25Ω|
|Reversedioded_v_/d_t_|d_v_/d_t_|-|-|6|kV/µs|_I_D=0.19A,_V_DS=80V,d_i_/d_t_=200A/µs,<br>_T_j,max=150°C|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation1)|_P_tot|-|-|0.5|W|_T_A=25°C,_R_THJA=250°C/W|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - ambient,<br>minimum footprint1)|_R_thJA|-|-|250|K/W|-|
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=250µA|
|Gate threshold voltage|_V_GS(th)|0.8|1.4|1.8|V|_V_DS=_V_GS,_I_D=13µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>-|0.01<br>5|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|10|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|2.4<br>2.7|6<br>10|Ω|_V_GS=10V,_I_D=0.19A<br>_V_GS=4.5V,_I_D=0.15A|
|Transconductance|_g_fs|-|0.41|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=0.15A|
1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB
Final Data Sheet
3
Rev.�2.1,��2021-02-01
**OptiMOS[TM] �Small-Signal-Transistor,�100�V BSS123I**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|15|-|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance|_C_oss|-|2.5|-|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|1.6|-|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|2.3|-|ns|_V_DD=50V,_V_GS=10V,_I_D=0.19A,<br>_R_G,ext=6Ω|
|Rise time|_t_r|-|3.2|-|ns|_V_DD=50V,_V_GS=10V,_I_D=0.19A,<br>_R_G,ext=6Ω|
|Turn-off delay time|_t_d(off)|-|7.4|-|ns|_V_DD=50V,_V_GS=10V,_I_D=0.19A,<br>_R_G,ext=6Ω|
|Fall time|_t_f|-|22|-|ns|_V_DD=50V,_V_GS=10V,_I_D=0.19A,<br>_R_G,ext=6Ω|
## **Table�6�����Gate�charge�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|0.04|-|nC|_V_DD=50V,_I_D=0.19A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|0.23|-|nC|_V_DD=50V,_I_D=0.19A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|0.63|-|nC|_V_DD=50V,_I_D=0.19A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|2.5|-|V|_V_DD=50V,_I_D=0.19A,_V_GS=0to10V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|0.19|A|_T_A=25°C|
|Diode pulse current|_I_S,pulse|-|-|0.77|A|_T_A=25°C|
|Diode forward voltage|_V_SD|-|0.86|1.1|V|_V_GS=0V,_I_F=0.19A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|12|18|ns|_V_R=50V,_I_F=0.19A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge|_Q_rr|-|4.3|6.5|nC|_V_R=50V,_I_F=0.19A,d_i_F/d_t_=100A/µs|
Final Data Sheet
Rev.�2.1,��2021-02-01
4
**OptiMOS[TM] BSS123I**
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0.6 0.20<br>0.5 | |<br>S SSR | 0.16 TNS<br>BE RS EEE | GCOS<br>0.4 t \ e IN<br>0.12<br>\<br>> 0.3 SE NSTSSSTE | TENET<br>BN Ne<br>0.08<br>Ne pas<br>0.2<br>SS \ \<br>RNSSTE | 0.04 STINE<br>0.1 NS PN<br>en\ eee<br>0.0 FREE EE EE EEE EEE 0.00 8<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>T A [°C] T A [°C]<br>0 P tot=f( TA ) I D=f( T A V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [0] poSSS eeSSS aNSS TT AAT 1 µs Saa 10 [3] [om single pulse oo<br>0.01<br>agNa 100 µs SR 10 µs H 0.02 Peer<br>S TR 0.05 CC<br>COI CIN SEN OTT<br>0.1<br>0.2<br>10 [-1] PtUIA)ZENNAN E 0.5 E<br>Snes 1 ms<br>SFA ae a eit pani<br>r EER Rt TOM NN a omer<br>| Tv tT TTT oT TE NEN oT TTT | l : ee<br>10 ms<br>Z SA act te H eTT tT | I<br>10 [-2] 10 [2]<br>DC<br>EHH SERRE St PT Te Aa<br>eS TL CePA CPIM CETL<br>ee emer PTE er eo CITI CCIM LTT CT<br>FIT Pier Pagar CCITT TET ET<br>10 [-3]<br>SSST)NS EOOO , f TTT TT<br>= Tae UME TMI ITE Hill<br>a | 4<br>HEHEHE<br>10 [-4] 10 [1]<br>HH | ZAI IITT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>V DS [V] t p [s]<br>I D=f( V DS T A D t p Z thJA=f( t p D = t p/ T<br>I D thJA<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
5
**OptiMOS[TM] BSS123I**
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**----- Start of picture text -----**<br>
0.8 8<br>3.3 V 2.8 V<br>4 V<br>10 V<br>0.7 LianPELLETtn ana|eerae" ooeemenn 7 yePit de debety yy yt a<br> APT EEE Pi TTT ee yy Ty<br>0.6 ETAT TTT 6 Pi TT TT TE<br>IATL TTT EE Pi TTT Te TT A<br>3 V<br>0.5 ETA]SAL a 5 BRRAes<br>errr TT PTT TT eT | ee<br>3 V<br>< 0.4 LAA fe 4 ee<br>2.8 V<br>3.3 V<br>0.3 LUAVr| TTT LTeoLETTE 3 aeee |<br>4.5 V<br>WL TTT TT ———<br>10 V<br>0.2 WL TTTTE 2 ee<br>BETTE TTT TTT EET Pi TTT<br>0.1 LTT 1 ee<br>WELLL TTT TTT TTT EET Pie TT ee Ey<br>0.0 PEEL T TTT TTTETTTT EEE TTT EEE 0 PTTSERRETT ET ey ey ty yy<br>0 2 4 6 8 10 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.8<br>25 °C<br>PET ETT TTT TTT Ey<br>150 °C<br>0.7 PET ETT TTT TT TTT Ey yy TT<br>PET ETT TTT TTT<br>0.6 PLTPET ETT TT TTT AA<br>0.5 PLT ETT ET TTT TT EAE TT<br>PLT T E TT TTT TTT AgE<br>z< 0.4 [itt T TTT TTT TET AAT TTT)<br>PLT ETT ETT TT TT TAT Ey TT<br>0.3 PEt TTT TT TTT TE<br>0.2 PETPETPET ETT ETT TTTET TTTTTT TAPE ATT ETEy<br>0.1 PET ETT TTT TT TAT EE<br>PLT ETT TT TTT A TAL EE<br>0.0 SERR E? ZEEE<br>0 1 2 3 4<br>V GS [V]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j<br>I D<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
8 PELL T TINT TTT ET<br>7 PELL T TTT TTTEEE<br>ETL T TINT TTEE<br>6 PLETE TTT NG TTT [TTT] TET<br>150 °C<br>5 SELLE ETT SAE EEEEEE<br>eeSReR ee<br>Je 4 LETT<br>PELL TTT ATT TEEPE TT TTT TTT<br>3 PETE T TEEN TTT TTT TTT<br>25 °C<br>2 HiiPELL typTTTTTTTPppTyDTPe<br>1 PELL T TT TTTTTT<br>ETTFETT T TTT TT T TTETTT<br>0 PEEEEEEEE TTT TY YETTTTTT<br>0 2 4 6 8 10<br>V GS [V]<br>R DS(on)=f( V GS I D T j<br>] Ω<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSS123I**
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**----- Start of picture text -----**<br>
2.4 2.0<br>CCCP -CLDLCLLE<br>PTET rr PCCPCCCEE ee<br>EEEECEECECECECLELLE A CORRECT<br>2.0<br>LTT TTT ETT TTT Ett yt TET AT 1.6 on SECT TT LLL<br>rT TT ETT TT EE TT ee TT Ty __| =~ tH<br>Suess aeseuaseeuueer<br>nqS 1.6 Coe pr22uceid MMMSGEGERnSCSanCTMOGEPECCCCECSSSCESRSEE E REEEP<br>2 LTTBERR TET TTT EET TT TAALAeTT ET TT 1.2 FOOELLCELLL SSTa < ALTBs<br>a OO 130 µA<br>® Y > \<br>1.2<br>Ag cestaeeeuves”<br>13 µA<br>BEERFE© COerEEL/| ce vsee e zsse(l MMMGIGG 0.8 SCCOPCECEAE E GUTGEEEHUEEEEEGaCGECC EA<br>0.8<br>SEE EEEEEE EEE PCCP CCE ECE Eee<br>TT TTT Teer TT TT ETT TT TT TT<br>0.4<br>0.4 POPPSoe cuseeeeuseeeeus0eee02( MMMM GGUIGEEEEUGEEEEUEEEELUEEPCCP<br>EEE CEE CCE CECE COOH<br>EERE EEE CEE EEE EEE PECCEEECCEECC EE<br>TT TTT TT Tee TT TTT TT ET TT<br>ECE EEE Eee PCCP<br>0.0 0.0<br>-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
10 [2] 10 [0]<br>FERRE EEE EE EEE EF EEE EF EE 4 25 °C eee<br>rT 25 °C, max ey ae<br>TTT TET tet tT et te ey et eT Tt oT | 150 °C Re Ae<br>150 °C, max<br>STOPT PaPaT SGTGTGTGTGnGTazG@s MM TOOT(CoOmmnee HE Aoe eAconectca<br>| (ATL<br>10 [-1]<br>KCCECEEEEEEEeeeeeeeeeeeey | TT eee<br>Ciss<br>e2. 10 [1] UTTER= RSf<br>— L1NARERRT TT tT tT EEE EEE EEEtT EEE PELLET<br>reece | 10 [-2] TAPE<br>HAAN BERRREESE<br>Coss<br>BASURSSSRBERHRBERBRBRRAOIR REE EEEEEEEEE<br>iN UR sccccccaiczyd ifeistztstsscsrae<br>10 [0] qI}T) Crss NVTANRAANITANRPeeAUT) 10 [-3] PUTEEEOe ee ee<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSS123I**
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [0] ———— a ee ee ee 10 FOOT TTL Ve<br>es es | 20 V50 V PIT TT TTT TTT tt A Te ya<br>a { 80 V e ee et<br>ee eel PR EECE<br>8<br>| PCEEEEECECE Eat Co<br>ill SN > a LITT TTT TT TTT TTT Tt yA tr<br>10 [-1]<br>Ms SUI NN UE AEE<br>EEEROPNOO SEE0SE ESEeee 25 °C 6 PECEEeeeeeeLTT TTT TTT TTT TTPLLA TATA Yr/4 4CEEEET<br>ze a AO(a<br><x PT TTT EENAT COOP ELVA PEE<br>PTT TIN 100 °C oT SO0000RRS000/<br>4<br>NO 006 eoeeeeeeee<br>10 [-2] ~ iiNN L IE TT TTT IT T T TyIATATYa eeeTT TEEETT TT<br>125 °C<br>F=fA EEpreererererrerarals A EEACELE<br>a 2 PPE T TTT TTT P r<br>thono SECEECEEEEEEE| EEEEEE CEE<br>LUA SEER<br>10 [-3] 0 PET TTT TEEPE TTT EE TE ET Py<br>ECAH ECVE) JFRREEEEEEEEEEEEEEEEEEEEE<br>10 [0] 10 [1] 10 [2] 10 [3] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
TT **Diagram Gate charge waveforms**
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**----- Start of picture text -----**<br>
115 PETIT TTT TET TT ETT TE EEE<br>PITT TTT TTT TTT TT ET TT yA<br>PTT TTT TTT TT TT TT TT TT PVA<br>110 PTT TTT TTT TTT TTT TT TT ATT<br>PTT TT TTT ETT TT TTT ET AT<br>PTT TT TTT ETT TT TTT EA TT<br>PTT TT TTT ETT TT TTT A EE<br>105 PTT TTT TTT TTT TTT ALE<br>cs HHTTTT ATT TT TT<br>PITT TT TTT TTT Ar tT<br>PETIT TT TTT Ar<br>100 PLT TTT TT TTA TE EE TT<br>PIT TT TTT TAT TTT ET ET<br>PITTI TTT VAT EE<br>PITT TTT VAT TTT ET Ey EE<br>95 PITTIPIT [TALE] EE<br>PIT TT AT TTT TTT Ty ET TT<br> TAT TET TT ETE tT<br>PITYV TTT ETT TT Ty ET ET TT<br>90<br>PePEPerereereer)<br>-80 -40 0 40 80 120 160<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] �Small-Signal-Transistor,�100�V BSS123I**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
**==> picture [251 x 285] intentionally omitted <==**
**==> picture [96 x 276] intentionally omitted <==**
|**PG-SOT23-3-U01**<br>PACKAGE - GROUP<br>NUMBER:|**PG-SOT23-3-U01**<br>PACKAGE - GROUP<br>NUMBER:|**PG-SOT23-3-U01**<br>PACKAGE - GROUP<br>NUMBER:|**PG-SOT23-3-U01**<br>PACKAGE - GROUP<br>NUMBER:|
|---|---|---|---|
|REVISION: 01||DATE: 09.12.2020||
|**DIMENSIONS**|**MILLIMETERS**|||
||MIN.||MAX.|
|**A**|0.89||1.12|
|**A1**|0.01||0.10|
|**A2**|0.88||1.02|
|**b**|0.30||0.50|
|**c**|0.08||0.20|
|**D**|2.80||3.04|
|**E**|2.10||2.64|
|**E1**|1.20||1.40|
|**e**|0.95|||
|**e1**|1.90|||
|**L**|0.15||0.60|
|**O**|0°||8°|
## **Figure�1�����Outline�PG-SOT23,�dimensions�in�mm**
Final Data Sheet
9
Rev.�2.1,��2021-02-01
**OptiMOS[TM] BSS123I**
## BSS123I
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2021-01-26|Release of final version|
|2.1|2021-02-01|Update format|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **Warnings**
Final Data Sheet
10
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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