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BSS123,215
Power MOSFET, N Channel, 100 V, 150 mA, 6 ohm, SOT-23, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 150mA
- Drain Source On State Resistance: 6ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.074 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia **Philips Semiconductors** **Product specification** ## **N-channel TrenchMOS** **transistor Logic level FET** ## **BSS123** ## **FEATURES** - **’Trench’** technology - Extremely fast switching - Logic level compatible - Subminiature surface mounting package **==> picture [386 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> SYMBOL QUICK REFERENCE DATA<br>d<br>VDSS = 100 V<br>ID = 150 mA<br>g<br>RDS(ON) ≤ 6 Ω (VGS = 10 V)<br>s<br>**----- End of picture text -----**<br> ## **GENERAL DESCRIPTION** N-channel enhancement mode field-effect transistor in a plastic envelope using ’ **trench** ’ technology. ## **Applications:-** - Relay driver - High-speed line driver - Telephone ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package. ## **PINNING** ## **SOT23** **==> picture [417 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> PIN DESCRIPTION<br>1 gate 3<br>Top view<br>2 source<br>3 drain<br>1 2<br>**----- End of picture text -----**<br> ## **LIMITING VALUES** Limiting values in accordance with the Absolute Maximum System (IEC 134) |||**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**||||**MIN.**||||**MAX.**||||**UNIT**|||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||VDSS|Drain-source voltage|||Tj= 25 ˚C||to 150˚C||||-||||100||||V|||| |||VDGR|Drain-gate voltage|||Tj= 25 ˚C||to 150˚C; RGS= 20 kΩ||||-||||100||||V|||| |||VGS|Gate-source voltage|||||||||-||||±20||||V|||| |||ID|Continuous drain current|||Ta= 25 ˚C||||||-||||150||||mA|||| |||IDM|Pulsed drain current|||Ta= 25 ˚C||||||-||||600||||mA|||| |||PD|Total power dissipation|||Ta= 25 ˚C||||||-||||0.25||||W|||| |||Tj, Tstg|Operating|junction and||||||||- 55||||150||||˚C|||| ||||storage temperature||||||||||||||||||||| ## **THERMAL RESISTANCES** ||**SYMBOL PARAMETER**<br>**CONDITIONS**<br>**TYP.**<br>**MAX.**<br>**UNIT**<br>Rth j-a<br>Thermal resistance junction<br>surface mounted on FR4 board<br>500<br>-<br>K/W<br>to ambient| |---|---| August 2000 Rev 1.000 1 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor Logic level FET ## BSS123 ## **ELECTRICAL CHARACTERISTICS** Tj= 25˚C unless otherwise specified ||**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|**SYMBOL PARAMETER**|||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|**CONDITIONS**||||**MIN.**|**MIN.**|**MIN.**|**MIN.**|**MIN.**||**TYP.**|**TYP.**|**TYP.**|**TYP.**|**TYP.**||**MAX.**|**MAX.**|**MAX.**|**MAX.**|**MAX.**|**MAX.**||**UNIT**|**UNIT**|**UNIT**|**UNIT**|**UNIT**|||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||V(BR)DSS|||Drain-source breakdown|||||||VGS||= 0 V; ID= 10µA|||||100||||||130|||||||||-|||||V||||||| |||||voltage||||||||||||||||||||||||||||||||||||||||| ||VGS(TO)|||Gate threshold voltage|||||||VDS||= VGS; ID= 1 mA|||||||1||||||2||||||2.8||||||V||||||| ||RDS(ON)|||Drain-source on-state|||||||VGS||= 10 V; ID= 120 mA|||||||-|||||3.5||||||||6|||||Ω||||||| |||||resistance||||||||||||||||||||||||||||||||||||||||| ||gfs|||Forward transconductance|||||||VDS||= 25 V; ID= 120 mA|||||||-||||350|||||||||-|||||mS||||||| ||IDSS|||Zero gate voltage drain|||||||VDS||= 60 V; VGS= 0 V|||||||-|||||10|||||100||||||||nA||||||| |||||current||||||||||||||||||||||||||||||||||||||||| ||IGSS|||Gate source leakage current<br>VGS|||||||||=±20 V; VDS= 0 V|||||||-|||||10|||||100||||||||nA||||||| ||ton|||Turn-on time|||||||VDD||= 50 V; RD= 250Ω; VGS= 10 V;|||||||-||||||3||||||10||||||ns||||||| ||||||||||||RG= 50Ω; Resistive load|||||||||||||||||||||||||||||||||| ||toff|||Turn-off time||||||||||||||||-|||||12|||||||20||||||ns||||||| ||Ciss|||Input capacitance|||||||VGS||= 0 V; VDS= 25 V; f = 1 MHz|||||||-|||||23|||||||40||||||pF||||||| ||Coss|||Output capacitance||||||||||||||||-||||||6||||||25||||||pF||||||| ||Crss|||Feedback capacitance||||||||||||||||-||||||4||||||10||||||pF||||||| August 2000 Rev 1.000 2 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor Logic level FET ## BSS123 ## **MECHANICAL DATA** **==> picture [348 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface mounted package; 3 leads SOT23<br>D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>mm 1.10.9 0.1 0.480.38 0.150.09 3.02.8 1.41.2 1.9 0.95 2.52.1 0.450.15 0.550.45 0.2 0.1<br>VERSIONOUTLINE IEC JEDEC REFERENCES EIAJ PROJECTIONEUROPEAN ISSUE DATE<br> SOT23 97-02-28<br>**----- End of picture text -----**<br> _Fig.1. SOT23 surface mounting package._ ## **Notes** 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". August 2000 Rev 1.000 3 Philips Semiconductors Product specification ## N-channel TrenchMOS transistor Logic level FET BSS123 ## **DEFINITIONS** |**DEFINITIONS**||||||||| |---|---|---|---|---|---|---|---|---| |**Data sheet status**||||||||| |Objective specification|This data sheet contains target orgoal specifications forproduct development.|||||||| |Preliminaryspecification This data sheet containspreliminarydata; supplementarydata maybepublished later.||||||||| |Product specification|This data sheet contains final product specifications.|||||||| |**Limiting values**||||||||| |Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above||||one||||| |or more of the limiting values may cause permanent damage to the device. These are stress ratings only and||||||||| |operation of the device|at these or at any other conditions above those given in the Characteristics sections of|||||||| |this specification is not implied. Exposure to limitingvalues for extendedperiods mayaffect device reliability.||||||||| |**Application information**||||||||| |Where application information is given, it is advisory and does not form part of the specification.||||||||| |**Philips Electronics N.V. 2000**||||||||| |All rights are reserved.|Reproduction in whole or in part is prohibited without the prior written consent of the|||||||| |copyright owner.||||||||| The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. ## **LIFE SUPPORT APPLICATIONS** These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 2000 Rev 1.000 4
Updated at April 24, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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