BSR58

**DATA SHEET www.onsemi.com** 

## N-Channel JFET Low-Frequency Low-Noise Amplifier 

## BSR58 

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3<br>1. Drain<br>2. Source<br>1 3. Gate<br>2<br>SOT−23<br>CASE 318−08<br>**----- End of picture text -----**<br>


## **Description** 

This device is designed for low−power chopper or switching application sourced from process 51. 

## **ABSOLUTE MAXIMUM RATINGS** 

(TC = 25 ° C unless otherwise noted) 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDGO|Drain−Gate Voltage|40|V|
|VGSO|Gate−Source Voltage|−40|V|
|IGF|Forward Gate Current|50|mA|
|Ptot|Total Power Dissipation<br>Up to Tamb= 40°C|250|mW|
|TSTG|Storage Temperature Range|−55 to +150|°C|
|TJ|Junction Temperature|150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **MARKING DIAGRAM** 

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M6 M �<br>�<br>1<br>M6 = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|BSR58|SOT−23<br>(Pb−Free)|3000 /<br>Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICA**|**L CHARACTERISTICS**(TC= 25°C unless o|therwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|BVGSS|Gate−Source Voltage|VDS= 0 V, IC= 1.0�A|40.0|−|−|V|
|IGSS|Gate Reverse Current|VGS= 20 V|−|−|1.0|nA|
|IDSS|Zero−Gate Voltage Drain Current|VDS= 15 V, VGS= 0 V|8.0|−|80.0|mA|
|VGS(off)|Gate−Source Cut−off Voltage|VDS= 15 V, ID= 0.5 nA|0.8|−|4.0|V|
|VDS(on)|Drain−Source On Voltage|VGS= 0 V, ID= 5 mA|−|−|0.4|V|
|rds(on)|Drain−Source On Reverse|VGS= 0 V, ID= 0 mA|−|−|60.0|�|
|Crss|Reverse Transfer Capacitance|VDS= 0 V, VGS= 10 V|−|−|5.0|pF|
|td|Delay Time|VDD= 10 V, VGS(on) = 0 V<br>ID= 10 mA, VGS(off) = 10.0 V|−<br>−<br>−|−|10.0|ns|
|tr|Rise Time|||−|10.0||
|toff|Turn−off Time|||−|100.0||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2002 **November, 2021 − Rev. 2** 

**BSR58/D** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

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