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BSP89H6327XTSA1
Power MOSFET, N Channel, 240 V, 350 mA, 6 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):4.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: SIPMOS
- Qualification: AEC-Q101
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 240V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 350mA
- Drain Source On State Resistance: 6ohm
- Gate Source Threshold Voltage Max: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.144 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSP89**
_**Rev. 2. 2**_
## **SIPMOS Small-Signal-Transistor**
**Product Summary**
## **Feature**
. N-Channel _V_ DS 240 V _R_ 6 . Enhancement mode | DS(on) fe | . Logic Level **|** _I_ D 0.35 A ° d _v_ /d _t_ rated PG-SOT223 Drain •[[Pb-free lead plating; RoHS compliant]] 4 •[[ee lead plating; RoHS compliant]] 4.5V rated ES e Qualified according to AEC Q101 in] pin 2,4 Ee: 3 • Gate LE 2 Halogenfree according to IEC61249221 ° a) QeLA @® Halogen-Free fect-a~> * e/RoHS ~ pin3 1 VPS05163 **Type Package Tape and Reel Information Marking Packaging** BSP89 PG-SOT223 H 6327: 1000 pcs/reel BSP89 Non dry
- [[Pb-free lead plating; RoHS compliant]]
- [[ee lead plating; RoHS compliant]] 4.5V rated
## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified
|**Maximum Ratings**, at _T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified||
|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D<br>Pf|0.35<br>0.28<br>Pf|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|1.4||
|Reverse diode d_v_/d_t_<br>_I_S=0.35A,_V_DS=192V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS<br>aee|±20<br>ee|V|
|ESDclass (JESD22-A114-HBM)||1A (>250V, <500V)||
|Power dissipation<br>_T_A=25°C|_P_tot<br>fo|1.8<br>fo|W|
|Operating and storage temperature|_T_j ,_T_stg<br>a|-55... +150|°C|
|IEC climatic category; DIN IEC 68-1|jstg<br>a|55/150/56||
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Page 1
**BSP89**
_**Rev. 2. 2**_
**Thermal Characteristics**
|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>~~ee~~<br>~~ee~~||||||
|Thermal resistance, junction - soldering point|_R_thJS|-|-|25|K/W|
|(Pin 4)||||||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|-|115||
|@ 6 cm2cooling area1)||-|-|70||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=250µA<br>|<br>||_V_(BR)DSS<br>|<br>|<br>|||240<br>tt<br>fT|-<br>tt<br>fT|-<br>tt<br>|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=108µA<br>|<br>||_V_GS(th)<br>|<br>|<br>|||0.8<br>tt<br>fT|1.4<br>tt<br>fT||1.8<br>tt<br>|||
|Zero gate voltage drain current<br>_V_DS=240V,_V_GS=0,_T_j=25°C<br>_V_DS=240V,_V_GS=0,_T_j=150°C<br>|<br>||_I_DSS<br>| |<br>ttt<br>|<br>||-<br>-<br>fT<br>ttt<br>tt|-<br>-<br>fT<br>ttt<br>tt|0.1<br>10<br><br>ttt<br>tt|µA|
|Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>|<br>||_I_GSS<br>|<br>|<br>|<br>||-<br>tt<br>i|-<br>tt<br>||10<br>tt|nA<br>i|
|Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.32A<br>|<br>||_R_DS(on)<br>|<br>|<br>|<br>|<br>pt|-<br>tt<br>i<br>pttf|4.9<br>tt<br>|<br>tf|7.5<br>tt<br>tf|i|
|Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.35A<br>||_R_DS(on)<br>|<br>|<br>pt|-<br>i<br>pttf|4.2<br>|<br>tf|6<br>tf||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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Page 2
**BSP89**
_**Rev. 2. 2**_
|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|
|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**||||||||||
|Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance|_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=0.28A<br>0.18<br>0.36<br>-<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>80<br>140<br>_C_oss<br>-<br>11.2<br>16.8<br>_C_rss<br>-<br>5.2<br>7.8<br>jttt<br>=<br>ee||||||||S<br>pF|
|Turn-on delay time<br>Rise time|_t_d(on)<br>_V_DD=120V,_V_GS=10V,<br>_I_D=0.35A,_R_G=6<br>-<br>4<br>6<br>_t_r<br>-<br>3.5<br>5.3<br>=||||||||ns|
|Turn-off delay time<br>Fall time|_t_d(off)<br>-<br>15.9<br>23.8<br>_t_f<br>-<br>18.4<br>27.6<br>=|||||||||
|**Gate Charge Characteristics**||||||||||
|Gate to source charge|||_Q_gs||_V_DD=192V,_I_D=0.35A|-|0.2|0.3|nC|
|Gate to drain charge|||_Q_gd|||-|2|3||
|Gate charge total|||_Q_g||_V_DD=192V,_I_D=0.35A,|-|4.3|6.4||
||||||_V_GS=0 to 10V|||||
|Gate plateau voltage|||_V_(plateau)||_V_DD=192V,_I_D= 0.35 A|-|3.1|-|V|
|**Reverse Diode**||||||||||
|Inverse diode continuous|||_I_S||_T_A=25°C|-|-|0.35|A|
|forward current||||||||||
|Inv. diode direct current, pulsed|||_I_SM|||-|-|1.4||
|Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=_I_S|-|0.85|1.2|V|
|Reverse recovery time|||_t_rr||_V_R=120V,_I_F=_l_S,|-|67|100|ns|
|Reverse recovery charge|||_Q_rr||d_i_F/d_t_=100A/µs|-|123|184|nC|
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Page 3
**BSP89**
_**Rev. 2. 2**_
## **1 Power dissipation**
_P_ tot = _f_ ( _T_ A)
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## **3 Safe operating area**
## _I_ D = _f_ ( _V_ DS )
parameter : _D_ = 0 , _T_ A = 25 °C
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## **2 Drain current**
## _I_ D = _f_ ( _T_ A)
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## **4 Transient thermal impedance**
_Z_ thJA = _f_ ( _t_ p)
parameter : _D_ = _t_ p/ _T_
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Page 4
**BSP89**
_**Rev. 2. 2**_
## **6 Typ. drain-source on resistance**
## **5 Typ. output characteristic**
_I_ D = _f_ ( _V_ DS)
_R_ DS(on) = _f_ ( _I_ D)
parameter: _T_ j = 25 °C, _V_ GS
parameter: _T_ j = 25 °C, _V_ GS
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## **7 Typ. transfer characteristics**
_I_ D== _f_ ( _V_ GS ); ); _V_ DS 2 x _I_ D x x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C
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Page 5
**BSP89**
_**Rev. 2. 2**_
## **9 Drain-source on-state resistance**
_R_ DS(on) = _f_ ( _T_ j)
parameter : _I_ D = 0.35 A, _V_ GS = 10 V
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## **11 Typ. capacitances**
## _C_ = _f_ ( _V_ DS)
## parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C
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**----- Start of picture text -----**<br>
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## **10 Typ. gate threshold voltage**
## _V_ GS(th) = _f_ ( _T_ j)
parameter: _V_ GS = _V_ DS; _I_ D =108µA
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**----- Start of picture text -----**<br>
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## **12 Forward character. of reverse diode**
## _I_ F = _f_ (VSD)
## parameter: _T_ j
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10 1 BSP89<br>S SS<br>A<br>——— ooo<br>PTET TEE Pe Ey yy<br>10 0<br>Wye<br>FOOT ALCELLELL LL<br>PLETE PAT TIT TT TT<br>10 -1<br>1 COATT<br>T j = 25 °C typ<br>T j = 150 °C typ<br>T j = 25 °C (98%)<br>SHH =H<br>| PRA T j = 150 °C (98%) nae<br>10 -2 ati LL<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>I F<br>**----- End of picture text -----**<br>
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Page 6
**BSP89**
_**Rev. 2. 2**_
## **13 Typ. gate charge**
_V_ GS = _f_ ( _Q_ G); parameter: _V_ DS ,
## **14 Drain-source breakdown voltage**
_V_ (BR)DSS = _f_ ( _T_ j)
_I_ D = 0.35 A pulsed, _T_ j = 25 °C
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**BSP89**
## _**Rev. 2. 2**_
20 12 - 11 - 29
Page 8
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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