BSP89,115

## **DISCRETE SEMICONDUCTORS** 

## **DATA SHEET** 

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book, halfpage<br>M3D087<br>**----- End of picture text -----**<br>


**BSP89** N-channel enhancement mode vertical D-MOS transistor 

2001 May 18 Supersedes data of 1997 Jun 23 

**Philips Semiconductors** 

**BSP89** 

## **N-channel enhancement mode vertical D-MOS transistor** 

## **FEATURES** 

- Direct interface to C-MOS, TTL, etc. 

- High-speed switching 

- No secondary breakdown. 

## **DESCRIPTION** 

N-channel enhancement mode vertical D-MOS transistor in a SOT223 package, intended for use as a surface-mounted device in line current interrupters in telephone sets and for application in relay, high speed and line transformer drivers. 

## **PINNING - SOT223** 

|**PIN**|**DESCRIPTION**|
|---|---|
|Code: BSP89||
|1<br>2<br>3<br>4|gate<br>drain<br>source<br>drain|



## **QUICK REFERENCE DATA** 

|**SYMBOL**|**PARAMETER**|**MAX.**|**UNIT**|
|---|---|---|---|
|VDS|drain-source voltage (DC)|240|V|
|VGSth|gate-source threshold voltage|2|V|
|ID|drain current (DC)|375|mA|
|RDSon|drain-source on-state resistance|5|Ω|



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handbook, halfpage 4 d<br>g<br>1 2 3 s<br>Top view MAM109<br>**----- End of picture text -----**<br>


Fig.1  Simplified outline (SOT223) and symbol. 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VDS|drain-source voltage (DC)||−|240|V|
|VGSO|gate-source voltage (DC)|open drain|−|±20|V|
|ID|drain current (DC)||−|375|mA|
|IDM|peak drain current||−|1.5|A|
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|1.5|W|
|Tstg|storage temperature||−55|+150|°C|
|Tj|junction temperature||−|150|°C|



## **Note** 

1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm[2] . 

2001 May 18 

2 

Philips Semiconductors 

## N-channel enhancement mode vertical D-MOS transistor 

## BSP89 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**VALUE**|**UNIT**|
|---|---|---|---|
|Rth j-a|thermal resistance from junction to ambient; note 1|83.3|K/W|



## **Note** 

1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm[2] . 

## **CHARACTERISTICS** 

Tj = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|---|
|V(BR)DSS|drain-source breakdown voltage|ID= 10µA; VGS= 0|240|−|−|V|
|IDSS|drain-source leakage current|VDS= 60 V; VGS= 0|−|−|200|nA|
|IGSS|gate-source leakage current|VGS=±20 V; VDS= 0|−|−|100|nA|
|VGSth|gate-source threshold voltage|ID= 1 mA; VGS= VDS|0.8|−|2|V|
|RDSon|drain-source on-state resistance|ID= 340 mA; VGS= 10 V|−|2.8|5|Ω|
|||ID= 340 mA; VGS= 4.5 V|−|−|7.5|Ω|
|Yfs|transfer admittance|ID= 340 mA; VDS= 25 V|140|600|−|mS|
|Ciss|input capacitance|VDS= 25 V; VGS= 0; f = 1 MHz|−|100|120|pF|
|Coss|output capacitance|VDS= 25 V; VGS= 0; f = 1 MHz|−|20|30|pF|
|Crss|reverse transfer capacitance|VDS= 25 V; VGS= 0; f = 1 MHz|−|10|15|pF|
|**Switching times (see Figs**3**and**4**)**|||||||
|ton|turn-on time|ID= 250 mA; VDD= 50 V;<br>VGS= 0 to 10 V|−|6|10|ns|
|toff|turn-off time|ID= 250 mA; VDD= 50 V;<br>VGS= 0 to 10 V|−|47|60|ns|



2001 May 18 

3 

Philips Semiconductors 

## N-channel enhancement mode vertical D-MOS transistor 

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MBB693<br>2<br>handbook, halfpage<br>Ptot<br>(W)<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 50 100 150 200<br>Tamb (°C)<br>**----- End of picture text -----**<br>


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Fig.2  Power derating curve.<br>**----- End of picture text -----**<br>


## BSP89 

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**----- Start of picture text -----**<br>
handbook, halfpage VDD = 50 V<br>10 V<br>ID<br>0 V<br>50 Ω<br>MBB691<br>**----- End of picture text -----**<br>


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Fig.3  Switching times test circuit.<br>**----- End of picture text -----**<br>


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handbook, halfpage 90 %<br>INPUT<br>10 %<br>90 %<br>OUTPUT<br>10 %<br>ton toff<br>MBB692<br>Fig.4  Input and output waveforms.<br>**----- End of picture text -----**<br>


2001 May 18 

4 

Philips Semiconductors 

BSP89 

N-channel enhancement mode vertical D-MOS transistor 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; collector pad for good heat transfer; 4 leads** 

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SOT223<br>**----- End of picture text -----**<br>


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D B E A X<br>c<br>y<br>HE v M A<br>b1<br>4<br>Q<br>A<br>A1<br>1 2 3 Lp<br>e1 bp w M B detail X<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y<br>1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95<br>mm 4.6 2.3 0.2 0.1 0.1<br>1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br>97-02-28<br> SOT223 SC-73<br>99-09-13<br>**----- End of picture text -----**<br>


2001 May 18 

5 

Philips Semiconductors 

BSP89 

## N-channel enhancement mode vertical D-MOS transistor 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DATA SHEET STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITIONS**|
|Objective data|Development|This data sheet contains data from the objective specification for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specification.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|Product data|Production|This data sheet contains data from the product specification. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Changes will be<br>communicated according to the Customer Product/Process Change<br>Notifcation (CPCN) procedure SNW-SQ-650A.|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2001 May 18 

6 

Philips Semiconductors 

N-channel enhancement mode vertical D-MOS transistor 

BSP89 

## **NOTES** 

2001 May 18 

7 

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© Philips Electronics N.V. 2001 

SCA 72 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. 

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

**==> picture [214 x 95] intentionally omitted <==**

Date of release: 2001 May 18 Document order number: 9397 750 08248 

613510/03/pp8 

it Q 

Philips Semiconductors Home ProducBuy MySemContacProduct Information catalogonline **BSP89; N-channel enhancement mode vertical D-MOS** ~~P~~ roducts **transistor** 

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|~~•~~<br>Catalog by<br>System<br>~~•~~<br>Cross-reference||||||N-channel enhancement mode vertical D-MOS transistor in a SOT223 package,<br>mounted device in line current interrupters in telephone sets and for application<br>transformer drivers.||||||||||||||||intended for use as a surface-<br>in relay, high speed and line||||
|~~•~~<br>Packages||||||||||||||||||||||||||
|~~•~~<br>End of Life<br>information<br>~~•~~<br>Distributors Go<br>Here!|||||||to**Features**<br>G Direct interface to C-MOS, TTL,etc.|||||||||||||||||||



G High-speed switching 

- G No secondary breakdown. 

## to **[ Datasheet ]** 

|**Type**|**Title**|**Publication **|**Datasheet status**|**Page**|**File**|**Datasheet**|**Datasheet**|
|---|---|---|---|---|---|---|---|
|**number**||**release date**||**count**|**size**|||
||||||**(kB)**|||
|BSP89|N-channel|18-May-01|Product|8|55|Dow~~n~~<br>Download||
||enhancement||specification|||||
||mode vertical D-|||||||
||MOS transistor|||||||



## to **[ Blockdiagram(s) ]** 

Block diagram of BSP89 

## to **[ Parametrics ]** 

**Type number Package VDS(V) Configuration IDDC(A) RDS(on)(mOhm)** 5000@10V BSP89 SOT223 (SC-73) 240 Single N-channel 0.375 7500@4.5V 

## to **[ Products, packages, availability and ordering ]** 

|**Type**|**North **|**Ordering code**|**Marking/Packing**|**Marking/Packing**|**Package**|**Device status**|**Buy online**||
|---|---|---|---|---|---|---|---|---|
|**number**|**American **|**(12NC)**|Dow~~n~~<br>**Discretes packing**||||||
||**type**||**info**||||||
||**number**||||||||
|BSP89|BSP89<br>T/R|9340 187 50115|Standard Marking *<br>Reel Pack, SMD||SOT223<br>(SC-73)|Full production|order this|-|



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